2SK3748 Ordering number : EN8250B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3748 High-Voltage, High-Speed Switching Applications Features * * * * Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Attachment workability is good by Mica-less package Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ID* IDP Allowable Power Dissipation PD Unit 1500 V 20 V PW10s, duty cycle1% Tc=25C 4 A 8 A 3.0 W 65 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS IAV 165 mJ Avalanche Current *2 4 A *Shows chip capability *1 VDD=50V, L=20mH, IAV=4A (Fig.1) *2 L20mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7538A-002 * Package : TO-3PF-3L * JEITA, JEDEC : SC-94 * Minimum Packing Quantity : 30 pcs./magazine 2SK3748-1E 5.5 4.5 15.5 Marking 3.0 Electrical Connection 10.0 3.6 3.5 2.0 5.0 25.0 24.5 2 K3748 2.0 2.0 19.3 LOT No. 4.0 0.75 2 5.45 0.9 3 3 3.3 1 1 2.0 5.45 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PF-3L http://semicon.sanyo.com/en/network 52312 TKIM TC-00002764/72905 MSIM TB-00001688 / 31005QB TSIM TB-00001272 No.8250-1/7 2SK3748 Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions Ratings min typ Unit max 1500 ID=1mA, VGS=0V VDS=1200V, VGS=0V Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=10V, ID=1mA 2.5 Forward Transfer Admittance | yfs | VDS=20V, ID=2A 1.7 Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=10V Input Capacitance Ciss V 100 A 10 A 3.5 2.8 V S 5 7 790 pF Output Capacitance Coss 140 pF Reverse Transfer Capacitance Crss 70 pF Turn-ON Delay Time td(on) tr 17 ns 75 ns 360 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD trr Reverse Recovery Time Fig.1 Avalanche Resistance Test Circuit VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=4A IS=4A, VGS=0V IS=4A, VGS=0V, dis/dt=100A/s ns 80 nC 6.4 nC 36 nC 0.94 D VOUT PW=10s D.C.0.5% V ns L 50 RG ID=2A RL=100 VIN 1.2 340 Fig.2 Switching Time Test Circuit VDD 200V VIN 10V 0V 116 2SK3748 10V 0V VDD 50 G 2SK3748 P.G RGS 50 S Ordering Information Device 2SK3748-1E Package Shipping memo TO-3PF-3L 30pcs./magazine Pb Free No.8250-2/7 2SK3748 ID -- VDS 8 VDS=20V 8V 10V 7 6 Tc= --25C 6V 6 Drain Current, ID -- A Drain Current, ID -- A ID -- VGS 7 Tc=25C 5 5V 4 3 2 VGS=4V 1 5 25C 4 3 75C 2 1 0 0 0 10 20 30 40 50 60 Drain-to-Source Voltage, VDS -- V 70 0 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 14 2 IT09205 Static Drain-to-Source On-State Resistance, RDS(on) -- ID=2A VGS=10V Tc=75C 8 6 25C 4 --25C 2 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 4 2 --25 0 25 50 75 100 125 7 5 3 2 150 IT09208 IS -- VSD VGS=0V 10 7 5 1.0 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2 3 5 7 2 1.0 Drain Current, ID -- A 3 5 7 td(off) 5 0.3 0.6 0.9 1.2 Diode Forward Voltage, VSD -- V 1.5 IT09210 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 7 0 IT09209 SW Time -- ID 1000 f=1MHz 3 2 Ciss, Coss, Crss -- pF 3 2 tf 100 7 5 tr 3 td(on) 2 10 0.1 6 2 C --25 Tc= C 75 2 8 Case Temperature, Tc -- C C 25 3 10 IT09207 VDS=20V 5 0.1 0.1 Switching Time, SW Time -- ns 20 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 18 12 0 --50 0 0 14 Tc= 75C 25C --25C Static Drain-to-Source On-State Resistance, RDS(on) -- 10 20 IT09206 RDS(on) -- Tc 16 ID=2A 12 18 1000 7 5 Ciss 3 2 Coss Crss 100 7 5 3 2 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT09211 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT09212 No.8250-3/7 2SK3748 VGS -- Qg 10 8 10 7 5 7 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 6 5 4 3 1 3 2 10 20 30 40 50 60 70 Total Gate Charge, Qg -- nC 90 1m s 1 10 0ms DC 0ms op er ati on Tc=25C Single pulse 2 3 5 7 10 Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 3 5 7 100 2 3 5 7 1000 2 3 IT16890 PD -- Tc 80 2.5 2 Drain-to-Source Voltage, VDS -- V IT09213 3.0 s 0 s Operation in this area is limited by RDS(on). 0.01 1.0 PD -- Ta 3.5 Allowable Power Dissipation, PD -- W 80 10 ID=4A 3 2 2 0 10 IDP=8A(PW10s) 1.0 7 5 0.1 7 5 0 ASO 2 VDS=200V ID=4A 70 65 60 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT09215 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT09216 No.8250-4/7 2SK3748 Magazine Specification 2SK3748-1E No.8250-5/7 2SK3748 Outline Drawing 2SK3748-1E Mass (g) Unit 5.5 mm * For reference No.8250-6/7 2SK3748 Note on usage : Since the 2SK3748 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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