IPA60R160P7 MOSFET 600VCoolMOSP7PowerDevice PG-TO220FP TheCoolMOSTM7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOSTMP7seriesisthesuccessortotheCoolMOSTMP6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. Features *Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness *Significantreductionofswitchingandconductionlosses *ExcellentESDrobustness>2kV(HBM)forallproducts *BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm) Drain Pin 2 *1 Gate Pin 1 *2 *1: Internal body diode *2: Integrated ESD diode Source Pin 3 Benefits *Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages *Simplifiedthermalmanagementduetolowswitchingandconduction losses *Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection *Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 160 m Qg,typ 31 nC ID,pulse 66 A Eoss @ 400V 3.5 J Body diode diF/dt 900 A/s Type/OrderingCode Package IPA60R160P7 PG-TO 220 FullPAK Final Data Sheet Marking 60R160P7 1 RelatedLinks see Appendix A Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 20 13 A TC=25C TC=100C - 66 A TC=25C - - 69 mJ ID=4.1A; VDD=50V; see table 10 EAR - - 0.35 mJ ID=4.1A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 4.1 A - MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 26 W TC=25C Storage temperature Tstg -55 - 150 C - Operating junction temperature Tj -55 - 150 C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 20 A TC=25C Diode pulse current IS,pulse - - 66 A TC=25C Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=20A,Tj=25C see table 8 Maximum diode commutation speed diF/dt - - 900 A/s VDS=0...400V,ISD<=20A,Tj=25C see table 8 Insulation withstand voltage VISO - - 2500 V Vrms,TC=25C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 3 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 4.72 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - C/W - Soldering temperature, wavesoldering only allowed at leads - - 260 C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4.0 V VDS=VGS,ID=0.35mA - 10 1 - A VDS=600V,VGS=0V,Tj=25C VDS=600V,VGS=0V,Tj=150C IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.120 0.281 0.160 - VGS=10V,ID=6.3A,Tj=25C VGS=10V,ID=6.3A,Tj=150C Gate resistance RG - 9 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.0 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1317 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 23 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 43 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 454 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 18 - ns VDD=400V,VGS=13V,ID=6.3A, RG=8.0;seetable9 Rise time tr - 12 - ns VDD=400V,VGS=13V,ID=6.3A, RG=8.0;seetable9 Turn-off delay time td(off) - 100 - ns VDD=400V,VGS=13V,ID=6.3A, RG=8.0;seetable9 Fall time tf - 8 - ns VDD=400V,VGS=13V,ID=6.3A, RG=8.0;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 7 - nC VDD=400V,ID=6.3A,VGS=0to10V Gate to drain charge Qgd - 10 - nC VDD=400V,ID=6.3A,VGS=0to10V Gate charge total Qg - 31 - nC VDD=400V,ID=6.3A,VGS=0to10V Gate plateau voltage Vplateau - 5.1 - V VDD=400V,ID=6.3A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=6.3A,Tj=25C 190 - ns VR=400V,IF=3A,diF/dt=100A/s; see table 8 - 1.7 - C VR=400V,IF=3A,diF/dt=100A/s; see table 8 - 17 - A VR=400V,IF=3A,diF/dt=100A/s; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 30 1 s 10 25 1 10 s 100 100 s 10-1 ID[A] Ptot[W] 20 15 1 ms 10-2 10 ms 10 10-3 5 0 DC 10-4 0 25 50 75 100 125 10-5 150 100 101 102 TC[C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 s 101 0.5 10 s 0 10 100 100 s 0.1 ZthJC[K/W] ID[A] 10-1 1 ms 10-2 0.05 0.02 10 ms 10-1 10-3 DC 100 101 102 0.01 single pulse 10-4 10-5 0.2 103 10-2 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 80 60 20 V 10 V 70 50 8V 60 20 V 10 V 7V 8V 40 7V ID[A] ID[A] 50 40 6V 30 30 5.5 V 6V 20 5.5 V 10 20 5V 10 5V 0 4.5 V 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.600 3.000 2.500 0.500 6V RDS(on)[normalized] RDS(on)[] 5.5 V 6.5 V 0.400 7V 10 V 20 V 2.000 1.500 1.000 0.300 0.500 0.200 0 10 20 30 40 50 0.000 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=6.3A;VGS=10V 8 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 80 12 25 C 10 60 8 VGS[V] ID[A] 150 C 40 120 V 400 V 6 4 20 2 0 0 2 4 6 8 10 0 12 0 5 10 15 VGS[V] 20 25 30 35 40 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=6.3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 80 60 101 EAS[mJ] IF[A] 125 C 25 C 40 100 20 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 125 150 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=4.1A;VDD=50V 9 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 690 680 670 104 660 650 640 C[pF] VBR(DSS)[V] Ciss 103 630 620 610 102 600 590 Coss 580 101 570 560 Crss 550 540 -50 -25 0 25 50 75 100 125 150 100 0 100 200 Tj[C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 5 4 Eoss[J] 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 6PackageOutlines 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 oP Q MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.42 2.86 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 28.70 29.75 13.75 12.78 2.83 3.45 3.30 3.00 3.15 3.50 DOCUMENT NO. Z8B00003319 REVISION 10 ISSUE DATE 21.03.2019 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION Figure1OutlinePG-TO220FullPAK,dimensionsinmm Final Data Sheet 12 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 7AppendixA Table11RelatedLinks * IFXCoolMOSP7Webpage:www.infineon.com * IFXCoolMOSP7applicationnote:www.infineon.com * IFXCoolMOSP7simulationmodel:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.1,2020-01-30 600VCoolMOSP7PowerDevice IPA60R160P7 RevisionHistory IPA60R160P7 Revision:2020-01-30,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-02-26 Release of final version 2.1 2020-01-30 Updated package drawing, symbol ID Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.1,2020-01-30