5
600VCoolMOSªP7PowerDevice
IPA60R160P7
Rev.2.1,2020-01-30Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.0 3.5 4.0 V VDS=VGS,ID=0.35mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.120
0.281
0.160
-ΩVGS=10V,ID=6.3A,Tj=25°C
VGS=10V,ID=6.3A,Tj=150°C
Gate resistance RG-9-Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1317 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 23 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 43 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 454 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 18 - ns VDD=400V,VGS=13V,ID=6.3A,
RG=8.0Ω;seetable9
Rise time tr- 12 - ns VDD=400V,VGS=13V,ID=6.3A,
RG=8.0Ω;seetable9
Turn-off delay time td(off) - 100 - ns VDD=400V,VGS=13V,ID=6.3A,
RG=8.0Ω;seetable9
Fall time tf- 8 - ns VDD=400V,VGS=13V,ID=6.3A,
RG=8.0Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 7 - nC VDD=400V,ID=6.3A,VGS=0to10V
Gate to drain charge Qgd - 10 - nC VDD=400V,ID=6.3A,VGS=0to10V
Gate charge total Qg- 31 - nC VDD=400V,ID=6.3A,VGS=0to10V
Gate plateau voltage Vplateau - 5.1 - V VDD=400V,ID=6.3A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V