FDMS86581 - ON SEMICONDUCTOR - Datasheet.Directory

July, 2018 − Rev. 0

1Publication Order Number:

FDMS86581/D

FDMS86581

MOSFET, N-Channel,

POWERTRENCH),

60 V, 30 A, 15 mW

Features

•Typical RDS(on) = 12.5 mW at VGS = 10 V, ID = 30 A

•Typical QG(tot) = 13 nC at VGS = 10 V, ID = 25 A

•UIS Capability

•RoHS Compliant

Applications

•DC−DC Power Supplies

•AC−DC Power Supplies

•Motor Control

•Load Switching

MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Symbol Parameter Ratings Unit

VDSS Drain−to−Source Voltage 60 V

VGS Gate−to−Source Voltage ±20 V

IDDrain Current − Continuous

(VGS = 10) TC = 25°C (Note 1)

30 A

Pulsed Drain Current, TC = 25°CSee Figure 4

EAS Single Pulse Avalanche Energy

(Note 2)

13.5 mJ

PDPower Dissipation 50 W

Derate Above 25°C0.33 W/°C

TJ, TSTG Operating and Storage Temperature −55 to +175 °C

RqJC Thermal Resistance, Junction to Case 3°C/W

RqJA Maximum Thermal Resistance,

Junction to Ambient (Note 3)

50 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by bondwire configuration.

2. Starting TJ = 25°C, L = 40 mH, IAS = 26 A, VDD = 60 V during inductor charging

and VDD = 0 V during time in avalanche.

3. RqJA is the sum of the junction−to−case and case−to−ambient thermal

resistance, where the case thermal reference is defined as the solder

mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA

is determined by the board design. The maximum rating presented here is

based on mounting on a 1 in2 pad of 2 oz copper.

Power 56

(PQFN8 5x6)

CASE 483AE

See detailed ordering and shipping information on page 2

of this data sheet.

ORDERING INFORMATION

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N-Channel MOSFET

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FDMS86581 = Specific Device Code

$Y&Z&3&K

FDMS

86581

ELECTRICAL CONNECTION

Bottom

Top

Pin 1

GSS

DDD

FDMS86581

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PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Shipping†

FDMS86581 FDMS86581 Power 56 3000 Units/

Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ. Max. Units

OFF CHARACTERISTICS

BVDSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 60 − − V

IDSS Drain−to−Source Leakage Current VDS = 60 V,

VGS = 0 V

TJ = 25°C− − 1 A

TJ = 175°C (Note 4) − − 1 mA

IGSS Gate−to−Source Leakage Current VGS = ±20 V − − ±100 nA

ON CHARACTERISTICS

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA2.0 2.7 4.0 V

RDS(on) Drain to Source On Resistance ID = 30 A,

VGS = 10 V

TJ = 25°C−12.5 15.0 mW

TJ = 175°C (Note 4) −25.1 30.1 mW

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 30 V, VGS = 0 V, f = 1 MHz −881 −pF

Coss Output Capacitance −281 −pF

Crss Reverse Transfer Capacitance −15 −pF

RGGate Resistance f = 1 MHz −3.1 −W

Qg(ToT) Total Gate Charge VGS = 0 to 10 V, VDD = 30 V, ID = 25 A −13 19 nC

Qg(th) Threshold Gate Charge VGS = 0 to 2 V, VDD = 30 V, ID = 25 A −2−nC

Qgs Gate−to−Source Gate Charge VDD = 30 V, ID = 25 A −4−nC

Qgd Gate−to−Drain “Miller” Charge −3−nC

SWITCHING CHARACTERISTICS

ton Turn−On Time VDD = 30 V, ID = 30 A, VGS = 10 V,

RGEN = 6 W

−−20 ns

td(on) Turn−On Delay −9−ns

trRise Time −5−ns

td(off) Turn−Off Delay −15 −ns

tfFall Time −4−ns

toff Turn−Off Time − − 28 ns

DRAIN−SOURCE DIODE CHARACTERISTICS

VSD Source−to−Drain Diode Voltage ISD = 30 A, VGS = 0 V − − 1.25 V

ISD = 15 A, VGS = 0 V − − 1.2 V

trr Reverse−Recovery Time IF = 30 A, dlSD/dt = 100 A/ms, VDD = 48 V −37 55 ns

Qrr Reverse Recovery Charge −22 33 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

FDMS86581

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Figure 1. Normalized Power Dissipation

vs. Case Temperature

0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (5C)

POWER DISSIPATION MULTIPLIER

0 50 75 100 125 150 175 200

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (5C)

CURRENT LIMITED

BY SILICON

CURRENT LIMITED

BY PACKAGE

VGS = 10 V

Figure 2. Maximum Continuous Drain Current

vs. Case Temperature

NORMALIZED THERMAL IMPED-

ANCE, ZqJC

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

DUTY CYCLE − DESCENDING ORDER

SINGLE PULSE

D = 0.50

0.20

0.10

0.05

0.02

0.01

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM ×ZqJC ×RqJC + TC

10−510−410−310−210−1100101

0.01

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TYPICAL CHARACTERISTICS

FDMS86581

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IDM, PEAK CURRENT (A)

t, RECTANGULAR PULSE DURATION (s)

Figure 4. Peak Current Capability

VGS = 10 V

FOR TEMPERATURES ABOVE

25°C DERATE PEAK CURRENT

AS FOLLOWS:

10−510−410−310−210−1100101

100

1000

TYPICAL CHARACTERISTICS (continued)

TC = 25°C

I = I25

175 − TC

150

0.1

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

0.01

0.1

100

1000

1 10 100 500

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

TC = 25°C

100 ms

1 ms

10 ms

100 ms

Figure 5. Forward Bias Safe Operating Area

100

STARTING TJ = 25°C

0.001 0.01 0.1 1 10

tAV, TIME IN AVALANCHE (ms)

IAS, AVALANCHE CURRENT (A)

STARTING TJ = 150°C

If R = 0

tAV = (L)(IAS)/(1.3 × RATED BVDSS − VDD)

If R ≠ 0

tAV = (L/R)In[(IAS × R)/(1.3 × RATED BVDSS − VDD) + 1]

Figure 6. Unclamped Inductive

Switching Capability

NOTE: Refer to ON Semiconductor Application Notes

AN7514 and AN7515.

TJ = 175°C TJ = 25°C

TJ = −55°C

PULSE DURATION = 250 ms

DUTY CYCLE = 0.5% MAX

VDD = 5 V

345 678910

100

VGS, GATE TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 7. Transfer Characteristics

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.1

100

VSD, BODY DIODE FORWARD VOLTAGE (V)

IS, REVERSE DRAIN CURRENT (A)

VGS = 0 V

TJ = 175°CTJ = 25°C

Figure 8. Forward Diode Characteristics

FDMS86581

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TYPICAL CHARACTERISTICS (continued)

100

Figure 9. Saturation Characteristics

012345

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

250 ms PULSE WIDTH

TJ = 25°C

VGS

15 V Top

10 V

8 V

7 V

6 V

5.5 V

5 V Bottom

100

Figure 10. Saturation Characteristics

012345

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

250 ms PULSE WIDTH

TJ = 175°C

VGS

15 V Top

10 V

8 V

7 V

6 V

5.5 V

5 V Bottom

PULSE DURATION = 250 ms

DUTY CYCLE = 0.5% MAX

ID = 30 A

TJ = 175°C

TJ = 25°C

100

056 7

VGS, GATE TO SOURCE VOLTAGE (V)

rDS(on), DRAIN TO SOURCE ON−

RESISTANCE (mW)

120

140

8910

Figure 11. RDSON vs. Gate Voltage

PULSE DURATION = 250 ms

DUTY CYCLE = 0.5% MAX

1.5

1.0

0.5

NORMALIZED DRAIN TO SOURCE

ON−RESISTANCE

2.0

2.5

−80 −40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (5C)

ID = 30 A

VGS = 10 V

Figure 12. Normalized RDSON vs. Junction

Temperature

−80 −40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (5C)

NORMALIZED GATE

THRESHOLD VOLTAGE

1.3

1.1

0.9

0.7

0.5

0.3

VGS = VDS

ID = 250 mA

Figure 13. Normalized Gate Threshold Voltage

vs. Temperature

1.5

1.0

0.5

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

2.0

2.5

−80 −40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (5C)

ID = 5 mA

Figure 14. Normalized Drain to Source

Breakdown Voltage vs. Junction Temperature

FDMS86581

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TYPICAL CHARACTERISTICS (continued)

Figure 15. Capacitance vs. Drain

to Source Voltage

0.1 1 024

Qg, GATE CHARGE (nC)

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 25 A

10 100

100

1000

10000

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz

VGS = 0 V

Ciss

Coss

Crss

6 8 10 12 14

VDD = 30 V

VDD = 24 V

VDD = 36 V

Figure 16. Gate Charge vs. Gate to Source

Voltage

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States

and/or other countries.

PQFN8 5X6, 1.27P

CASE 483AE

ISSUE A

DATE 27 SEP 201

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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