Order this document by TIP31A/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in general purpose amplifier and switching applications. * Collector-Emitter Saturation Voltage -- VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) -- TIP31A, TIP32A VCEO(sus) = 80 Vdc (Min) -- TIP31B, TIP32B VCEO(sus) = 100 Vdc (Min) -- TIP31C, TIP32C * High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol TIP31A TIP32A TIP318 TIP32B TIP31C TIP32C Unit VCEO 60 80 100 Vdc Collector-Base Voltage VCB 60 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak IC 3.0 5.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 Watts W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 Watts W/_C E 32 mJ TJ, Tstg - 65 to + 150 _C Max Unit Unclamped Inductive Load Energy (1) Operating and Storage Junction Temperature Range *Motorola Preferred Device 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 - 80 - 100 VOLTS 40 WATTS CASE 221A-06 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Ambient RJA 62.5 _C/W Thermal Resistance, Junction to Case RJC 3.125 _C/W (1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 .. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 3-1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 60 80 100 -- -- -- -- -- -- 0.3 0.3 0.3 -- -- -- 200 200 200 IEBO -- 1.0 mAdc hFE 25 10 -- 50 -- VCE(sat) VBE(on) -- 1.2 Vdc -- 1.8 Vdc fT hfe 3.0 -- MHz 20 -- -- OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Collector Cutoff Current (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31A, TIP32A TIP31B, TIP31C TIP32B, TIP32C Collector Cutoff Current (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C ICEO Vdc Adc ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) (1) Pulse Test: Pulse Width 300 s, Duty Cycle PD, POWER DISSIPATION (WATTS) TC 40 TA 4.0 30 3.0 20 2.0 10 1.0 0 0 2.0%. TC TA 0 20 40 60 100 80 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating TURN-ON PULSE APPROX +11 V APPROX +11 V SCOPE 0.7 0.5 RB t1 t3 Cjd << Ceb t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns t2 TURN-OFF PULSE IC/IB = 10 TJ = 25C 1.0 Vin Vin - 4.0 V DUTY CYCLE 2.0% APPROX - 9.0 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Figure 2. Switching Time Equivalent Circuit 3-2 2.0 RC t, TIME ( s) Vin 0 VEB(off) VCC 0.3 tr @ VCC = 30 V tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 td @ VEB(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data 3.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 ZJC(t) = r(t) RJC RJC(t) = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 1.0 0.2 1.0 0.5 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 5.0 ms 2.0 1.0 0.5 0.2 0.1 5.0 SECONDARY BREAKDOWN LIMITED @ TJ 150C THERMAL LIMIT @ TC = 25C (SINGLE PULSE) BONDING WIRE LIMIT TIP31A, TIP32A CURVES APPLY TIP31B, TIP32B BELOW RATED VCEO TIP31C, TIP32C 1.0 ms v 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active Region Safe Operating Area 300 ts t, TIME ( s) 1.0 0.7 0.5 0.3 0.2 tf @ VCC = 30 V IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C TJ = + 25C 200 CAPACITANCE (pF) 3.0 2.0 tf @ VCC = 10 V 0.1 0.07 0.05 0.03 0.03 100 Ceb 70 50 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 2.0 3.0 30 0.1 Ccb 0.2 0.3 10 0.5 1.0 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 7. Capacitance 3-3 hFE, DC CURRENT GAIN 300 100 70 50 TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 VCE = 2.0 V 25C - 55C 30 10 7.0 5.0 0.5 0.7 1.0 0.03 0.05 0.07 0.1 0.3 IC, COLLECTOR CURRENT (AMP) 3.0 2.0 TJ = 25C 1.6 0.4 0 1.0 V, TEMPERATURE COEFFICIENTS (mV/C) VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( A) 100 10-1 10-2 200 500 1000 + 2.0 + 1.5 *APPLIES FOR IC/IB hFE/2 TJ = - 65C TO + 150C + 1.0 *VC FOR VCE(sat) + 0.5 0 - 0.5 - 1.0 VB FOR VBE - 1.5 - 2.0 - 2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 Figure 10. "On" Voltages Figure 11. Temperature Coefficients VCE = 30 V TJ = 150C 100C REVERSE FORWARD 25C 10-3 - 0.4 - 0.3 - 0.2 - 0.1 3-4 10 20 50 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMP) 103 101 5.0 IC, COLLECTOR CURRENT (AMPS) ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 102 2.0 + 2.5 TJ = 25C 1.0 0.2 3.0 A Figure 9. Collector Saturation Region 1.4 0.8 1.0 A 0.8 Figure 8. DC Current Gain 1.2 IC = 0.3 A 1.2 2.0 3.0 107 105 IC ICES 104 IC = 2 x ICES 103 102 20 VCE = 30 V IC = 10 x ICES 106 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 3-5 Motorola reserves the right to make changes without further notice to any products herein. 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