TPS7A8901RTJR - TEXAS INSTRUMENTS

November, 2016 − Rev. 11 1Publication Order Number:

NTD5804N/D

NTD5804N, NTDV5804N,

SVD5804N

Power MOSFET

40 V, 69 A, Single N−Channel, DPAK

Features

•Low RDS(on)

•High Current Capability

•Avalanche Energy Specified

•NTDV, STDV and SVD Prefix for Automotive and Other

Applications Requiring Unique Site and Control Change

Requirements; AEC−Q101 Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Applications

•CCFL Backlight

•DC Motor Control

•Class D Amplifier

•Power Supply Secondary Side Synchronous Rectification

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 40 V

Gate−to−Source Voltage − Continuous VGS ±20 V

Gate−to−Source Voltage

− Non−Repetitive (tp < 10 mS) VGS ±30 V

Continuous Drain

Current (RqJC)

(Note 1) Steady

State

TC = 25°CID69 A

TC = 100°C 49

Power Dissipation

(RqJC) (Note 1) TC = 25°C PD71 W

Pulsed Drain Current tp = 10 msIDM 125 A

Operating Junction and Storage Temperature TJ, Tstg −55 to

175 °C

Source Current (Body Diode) IS60 A

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,

IL(pk) = 36 A, L = 0.3 mH, VDS = 40 V)

EAS 195 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) TL260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain) RqJC 2.1 °C/W

Junction−to−Ambient − Steady State (Note 1) RqJA 106

1. Surface−mounted on FR4 board using the minimum recommended pad size.

DPAK

CASE 369C

(Surface Mount)

STYLE 2

MARKING DIAGRAM

& PIN ASSIGNMENT

40 V 12 mW @ 5.0 V

RDS(on) MAX ID MAXV(BR)DSS

7.5 mW @ 10 V

www.onsemi.com

123

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Gate

Drain 3

Source

Drain

AYWW

04NG

A = Assembly Location*

Y = Year

WW = Work Week

5804N = Device Code

G = Pb−Free Package

69 A

N−Channel

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

NTD5804N, NTDV5804N, SVD5804N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA40 45 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/TJ41 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 40 V TJ = 25°C 1.0 mA

TJ = 150°C 100

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA2.0 3.5 V

Negative Threshold Temperature Co-

efficient VGS(TH)/TJ7.3 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 30 A 5.7 7.5 mW

VGS = 5 V, ID = 10 A 7.9 12

Forward Transconductance gFS VDS = 15 V, ID = 15 A 12 S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

2460 2850 pF

Output Capacitance Coss 310 400

Reverse Transfer Capacitance Crss 215 280

Total Gate Charge QG(TOT)

VGS = 10 V, VDS = 32 V,

ID = 30 A

45 nC

Threshold Gate Charge QG(TH) 2.8

Gate−to−Source Charge QGS 10

Gate−to−Drain Charge QGD 12.6

SWITCHING CHARACTERISTICS (Note 3)

T urn−On Delay Time td(on)

VGS = 10 V, VDD = 32 V,

ID = 30 A, RG = 2.5 W

11.8 ns

Rise Time tr18.7

T urn−Off Delay Time td(off) 26.8

Fall Time tf5.9

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = 10 A TJ = 25°C 0.81 1.2 V

TJ = 150°C 0.63

Reverse Recovery Time tRR

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 30 A

21.7 ns

Charge Time ta 11.9

Discharge Time tb 9.8

Reverse Recovery Charge QRR 11.8 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

NTD5804N, NTDV5804N, SVD5804N

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

32.521.510.50

65432

Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

108765

0.005

0.009

0.011

0.013

0.015

0.017

703010 50

0.03

0.04

0.05

Figure 5. On−Resistance Variation with

Temperature Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1007550250−25−50

0.7

0.8

0.9

1.2

1.3

1.4

1.6

1.8

423222122

1000

10,000

ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

IDSS, LEAKAGE (nA)

10 V

4.5 V

VGS = 7, 6, 5.8, 5.5, 5.2, 5 V

4.0 V

3.5 V

TJ = 25°C

100 VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

ID = 30 A

TJ = 25°C

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.02

0.01

VGS = 5 V

TJ = 25°C

VGS = 10 V

125 150 175

1.0

1.1

1.5

1.7 VGS = 10 V

ID = 69 A

TJ = 100°C

TJ = 150°C

VGS = 0 V

20 40

100

0.019

0.021

1.9

100

0.007

60 80

NTD5804N, NTDV5804N, SVD5804N

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

4035151050510

1000

2000

3000

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)VSD, SOURCE−T O−DRAIN VOLTAGE (V)

100101

1000

0.70.5 1.00.80.60.4

C, CAPACITANCE (pF)

VGS, GATE−TO−SOURCE VOLTAGE (V)

t, TIME (ns)

IS, SOURCE CURRENT (A)

3020 25

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

ID = 30 A

VGS

VDS

VDD = 32 V

ID = 30 A

VGS = 10 V td(off)

td(on)

TJ = 25°C

VGS = 0 V

VdsVgs 30 45

100

0.9

4000

5000

6000

Qgs Qgd

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1 1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.1

1000

ID, DRAIN CURRENT (AMPS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 20 V

SINGLE PULSE

TC = 25°C

1 ms

100 ms

10 ms

100

NTD5804N, NTDV5804N, SVD5804N

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1

t, PULSE TIME (s)

Figure 12. Thermal Response

r(t), Effective Transient Thermal Resistance

(°C/W)

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

ORDERING INFORMATION

Order Number Package Shipping†

NTD5804NT4G DPAK

(Pb−Free) 2500 / Tape & Reel

NTDV5804NT4G* DPAK

(Pb−Free) 2500 / Tape & Reel

STDV5804NT4G* DPAK

(Pb−Free) 2500 / Tape & Reel

SVD5804NT4G* DPAK

(Pb−Free) 2500 / Tape & Reel

SSVD5804NT4G* DPAK

(Pb−Free) 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NTDV, STDV and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable.

NTD5804N, NTDV5804N, SVD5804N

www.onsemi.com

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE F

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

L4b2

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.028 0.045 0.72 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

7. OPTIONAL MOLD FEATURE.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.114 REF 2.90 REF

L2 0.020 BSC 0.51 BSC

DET AIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

eBOTTOM VIEW

BOTTOM VIEW

SIDE VIEW

TOP VIEW

ALTERNATE

CONSTRUCTIONS

NOTE 7

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

NTD5804N/D

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