IRF634A - Fairchild Semiconductor

IRF634A

BVDSS = 250 V

RDS(on) = 0.45Ω

ID = 8.1 A

250

8.1

5.1

32

±30

205

8.1

7.4

4.8

74

0.59

- 55 to +150

300

1.69

--

62.5

--

0.5

--

♦ Avalanche Rugged Technol ogy

♦ Rugged Gate Oxide Technology

♦ Lower Input Capacitance

♦ Improved Gate Charge

♦ Extended Safe Operating Area

♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

♦ Lower RDS(ON): 0.327Ω (Typ .)

$GYDQFHG 3RZHU 026)(7

Thermal Resistance

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

RθJC

RθCS

RθJA

°C/W

Characteristic Max. UnitsSymbol Typ.

FEATURES

Absolute Maximum Ratings

Drain- to-Source Vol tage

Conti nuous Drain Current (TC=25°C)

Conti nuous Drain Current (TC=100°C)

Drain Current-Pulsed (1)

Gate-t o-Source Volta ge

Singl e Pulsed Aval anche Energy (2)

Avalanche Current (1)

Repetitive Aval anche Energy (1)

Peak Diode Recovery dv/dt (3)

Total Power Dissipati on (TC=25°C)

Linear Derating Fact or

Operating Junction and

Storage Temperature Range

Maxim um Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

Characteristic Value UnitsSymbol

IDM

VGS

EAS

IAR

EAR

dv/dt

ID

PD

TJ , TSTG

TL

A

V

mJ

A

mJ

V/ns

W

W/°C

A

°C

VDSS V

TO-220

1.Gate 2. Drain 3. Source

3

2

1

©1 999 Fa irchild Semic ond ucto r Corporation

Rev. B

IRF634A

250

--

2.0

--

0.29

--

110

50

13

14

53

21

30

5.8

13.5

--

4.0

100

-100

10

100

0.45

--

950

130

60

40

120

50

40

--

6.1

730

--

190

1.28

8.1

32

1.5

--

Notes;

(1) Repetitive Rating: Pulse Widt h Limited by Max imum Juncti on Temper ature

(2) L=5mH, IAS=8.1A, VDD=50V, RG=27Ω, S tarti ng TJ =25°C

(3) ISD ≤ 8. 1A, di/dt ≤ 210A/µs, VDD ≤ BVD SS , Starting TJ =25°C

(4) Pulse Test: Puls e Width = 250µs, Duty Cycle ≤ 2%

(5) Essential ly Inde pendent of Operating Temperat ure

1&+$11(/

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Electrical Characteristics (TC=25°C unles s otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

Static Drai n-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain ( Miller ) Charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

BVDSS

∆BV/∆TJ

VGS(th)

RDS(on)

IGSS

IDSS

V

V/°C

V

nA

µA

Ω

pF

ns

nC

--

VGS=0V,ID=250µA

ID=250µA

See Fig 7

VDS=5V,ID=250µA

VGS=30V

VGS=-30V

VDS=250V

VDS=200V,TC=125°C

VGS=10V,ID=4.05A (4)

VDS=40V,ID=4.05A (4)

VDD=125V,ID=8.1A,

RG=12Ω

See Fig 13

(4) (5)

VDS=200V,VGS=10V,

ID=8.1A

See Fig 6 & Fig 12

(4) (5)

Drain- to-Source Leakage Current

VGS=0V,VDS=25V,f =1M Hz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current (1)

Diode Forwar d Volta ge (4)

Reverse Recovery Time

Reverse Recovery Charge

IS

ISM

VSD

trr

Qrr

CharacteristicSymbol Max. UnitsTyp.M in. Test Condition

--

A

V

ns

µC

Integral reverse pn -di ode

in the MOSFET

TJ=25°C,IS=8.1A,VGS=0V

TJ=25°C,IF=8.1A

diF/dt=100A/µs (4)

IRF634A

10-1 100101

10-1

100

101

@ Notes :

1. 250

µs Pulse Test

2. TC = 25 oC

VGS

Top : 1 5 V

1 0 V

8 .0 V

7.0 V

6 .0 V

5.5 V

5.0 V

Bottom : 4.5 V

ID

, Drain Current [A]

V

DS , Drain-Source Voltage [V] 246810

10-1

100

101

25

oC

150 oC

- 55 oC

@ Notes :

1. VGS = 0 V

2. VDS = 40 V

3. 250 µs Pulse Test

ID , Drain Current [A]

VGS , Gate-Source Voltage [V]

010203040

0.00

0.25

0.50

0.75

1.00

@ Note : TJ = 25 oC

V

GS = 20 V

V

GS = 10 V

RDS(on) , [ Ω]

Drain-Source On-Resistance

I

D

, Drain Current [A] 0.20.40.60.81.01.21.41.6

10-1

100

101

150 oC25

oC

@ Notes :

1. VGS = 0 V

2. 250

µ

s Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

100101

0

400

800

1200C

iss= Cgs+ Cgd ( C

ds= shorted

)

C

oss= Cds+ Cgd

C

rss= Cgd

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

C rss

C oss

C iss

Capacitance [pF]

VDS , Drain-Source Voltage [V] 0 5 10 15 20 25 30

0

5

10

V

DS = 200 V

V

DS = 125 V

V

DS = 50 V

@ Notes : ID = 8.1 A

VGS , Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

1&+$11(/

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Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. O n-Resistance vs. Drain Current

IRF634A

-75 -50 -25 0 25 50 75 100 125 150 175

0.8

0.9

1.0

1.1

1.2

@ Notes :

1. VGS = 0 V

2. ID = 250 µA

BVDSS , (Normalized)

Drain-Source Breakdown Voltage

TJ

, Junction Temperature [o

C] -75-50-25 0 25 50 75 100125150175

0.0

0.5

1.0

1.5

2.0

2.5

3.0

@ Notes :

1. VGS = 10 V

2. ID = 4.05 A

RDS(on) , (Normalized)

Drain-Source On-Resistance

TJ

, Junction Temperature [o

C]

100101102

10-2

10-1

100

101

102

100

µs

DC

10 µs

1 ms

10 ms

@ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

Operation in This Area

is Limited by R DS(on)

ID , Drain Current [A]

VDS , Drain-Source Voltage [V] 25 50 75 100125150

0

2

4

6

8

10

ID , Drain Current [A]

T

c

, Case Temperature [o

C]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. ZθJC(t)=1.69 oC/W Max.

2. Duty Factor, D=t1/t2

3. TJM-TC=PDM*ZθJC(t)

ZθJC

(t) , Thermal Response

t1 , Square Wave Pulse Durat ion [sec]

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Fig 7. Breakdown Voltage vs. Te mperature Fig 8. On-Resistance vs . Temperature

Fig 11. Thermal Response

Fig 10. Max. Drain Curr ent vs. Ca se TemperatureFig 9. Max. Safe Operating Area

PDM

t1t2

IRF634A

1&+$11(/

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Fig 12. Gate Charge Test Circuit & Waveform

Fig 13. Res istive Switchi ng Test Circuit & Wavef orms

Fig 14. Unclamped Inductive Switching Test Circuit & Wa veforms

EAS =L

L IAS2

----

2

1--------------------

BVDSS -- VDD

BVDSS

Vin

Vout

10%

90%

td(on) tr

t on t off

td(off) tf

Charge

VGS

10V

Qg

Qgs Qgd

Vary t

p

to obtain

required peak ID

10V

VDD

C

LL

VDS

ID

RG

t p

DUT

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

VDD

( 0.5 rated VDS )

10V

Vout

Vin

RL

DUT

RG

3mA

VGS

Current Sa mpling (IG)

Resistor Curren t Sa mpl ing (ID)

Resistor

DUT

VDS

300nF

50kΩ

200nF

12V

Same Type

as DUT

Current Regulator

R1R2

IRF634A

1&+$11(/

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Fig 15. Peak Diode Recovery dv/ dt Tes t Circuit & Waveforms

DUT

VDS

+

--

L

I S

Driver

VGS

RGSame Type

as DUT

VGS dv/dt controlled by RG

IS control led by Duty Factor D

VDD

10V

VGS

( Driver )

I S

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

Vf

IFM , Bo dy D iode Forw ard Current

Body Diode Reverse Current

IRM

Body Diode R ecovery dv /dt

di/dt

D = Gate P ul se Width

Gate Pulse Period

--------------------------

TRADEMARKS

ACEx™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST®

FASTr™

GTO™

HiSeC™

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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be reasonably expected to cause the failure of the life

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Definition of Terms

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Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

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that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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