TEMPFET(R) BTS 114 A Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 114A 50 V 17 A 0.10 TO-220AB C67078-S5000-A2 2 3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 50 V Drain-gate voltage, RGS = 20 k VDGR 50 Gate-source voltage VGS 20 Continuous drain current, TC = 27 C ID 17 ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V ID-ISO 3.8 A Pulsed drain current, TC = 25 C ID puls 68 Short circuit current, Tj = - 55 ... + 150 C ISC 37 Short circuit dissipation, Tj = - 55 ... + 150 C PSCmax 550 Power dissipation Ptot 50 Operating and storage temperature range Tj, Tstg - 55 ... + 150 C DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 2.5 75 W K/W 1 19.02.04 TEMPFET(R) BTS 114 A Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 - - 2.5 3.0 3.5 Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1.0 mA VGS(th) Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 C Tj = 125 C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C I GSS Drain-source on-state resistance VGS = 10 V, ID = 9.0 A RDS(on) V A - - 0.1 10 1.0 100 - - 10 2 100 4 - 0.08 0.10 5.0 8.0 - - 450 600 - 220 350 - 85 150 nA A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID =9 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 10 V, ID = 3.0 A, RGS = 50 td(on) - 20 30 tr - 40 60 Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 10 V, ID = 3.0 A, RGS = 50 td(off) - 55 70 tf - 40 60 2 S pF ns 19.02.04 TEMPFET(R) BTS 114 A Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS - - 17 Pulsed source current I SM - - 68 Diode forward on-voltage IF = 17 A, VGS = 0 V VSD Reverse recovery time IF = IS, diF/dt = 100 A/s, VR = 30 V t rr Reverse recovery charge IF = IS, diF/dt = 100 A/s, VR = 30 V Q rr A V - 1.3 1.6 ns - 60 - C - 0.10 - - 1.4 1.5 - - 10 - - 10 - - 600 0.05 0.05 0.1 0.2 0.5 0.3 - - - 0.5 - 2.5 Temperature Sensor Forward voltage ITS(on) = 10 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C VTS(on) Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C ITS(on) Holding current, VTS(off) = 5.0 V, Tj = 25 C Tj = 150 C IH Switching temperature VTS = 5.0 V TTS(on) Turn-off time VTS = 5.0 V, ITS(on) = 2 mA toff 3 V mA C s 19.02.04 TEMPFET(R) BTS 114 A Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified Parameter Symbol Examples Unit 1 2 - Drain-source voltage VDS 15 30 - Gate-source voltage VGS 7.2 5.2 - Short-circuit current ISC 37 17 - A Short-circuit dissipation PSC 550 510 - W Response time Tj = 25 C, before short circuit tSC(off) ms 25 Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... + 150 C V 25 - Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C 4 19.02.04 TEMPFET(R) BTS 114 A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 s Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C 5 19.02.04 TEMPFET(R) BTS 114 A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 9 A, VGS = 10 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = - 1 mA (spread) Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = - 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = - 25 V 6 19.02.04 TEMPFET(R) BTS 114 A Continuous drain current ID = f (TC) Parameter: VGS - 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 s (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 19.02.04 TEMPFET(R) BTS 114 A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T 8 19.02.04 TEMPFET(R) BTS 114 A TO 220 AB Standard TO 220 AB SMD Version E3044 Ordering Code C67078-S5000-A8 4.4 3.7 1.3 15.6 9.2 17.5 1) 2) 13.5 3) 4.6 1 12.8 2.8 9.9 9.5 Ordering Code C67078-S5000-A2 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 TO 220 AB Ordering Code Tape & reel E3045 A C67078-S5000-A11 9 19.02.04 TEMPFET(R) BTS 114 A Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 19.02.04