TEMPFET® BTS 114 A
1 19.02.04
3
2
1
Features
●N channel
●Enhancement mode
●Temperature sensor with thyristor characteristic
●The drain pin is electrically shorted to the tab
Pin 1 2 3
GDS
Type VDS IDRDS(on) Package Ordering Code
BTS 114A 50 V 17 A 0.10 ΩTO-220AB C67078-S5000-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 50 V
Drain-gate voltage, RGS = 20 kΩVDGR 50
Gate-source voltage VGS ± 20
Continuous drain current, TC = 27 °CID17 A
ISO drain current
TC = 85 °C, VGS = 10 V, VDS = 0.5 V
ID-ISO 3.8
Pulsed drain current, TC = 25 °CID puls 68
Short circuit current, Tj = – 55 ... + 150 °CISC 37
Short circuit dissipation, Tj = – 55 ... + 150 °CPSCmax 550 W
Power dissipation Ptot 50
Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance
Chip-case
Chip-ambient
Rth JC
Rth JA
≤ 2.5
≤ 75
K/W
TEMPFET® BTS 114 A
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Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
V(BR)DSS 50 ––
V
Gate threshold voltage
VGS = VDS, ID = 1.0 mA
VGS(th) 2.5 3.0 3.5
Zero gate voltage drain current
VGS = 0 V, VDS = 50 V
Tj = 25 °C
Tj = 125 °C
IDSS
–
–
0.1
10
1.0
100
µA
Gate-source leakage current
VGS = 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
IGSS
–
–
10
2
100
4
nA
µA
Drain-source on-state resistance
VGS = 10 V, ID = 9.0 A
RDS(on) –0.08 0.10
Ω
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 ×ID×RDS(on)max,ID =9 A
gfs 5.0 8.0 –
S
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Ciss –450 600
pF
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Coss –220 350
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Crss –85 150
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 10 V, ID = 3.0 A,
RGS = 50 Ω
td(on) –20 30 ns
t r –40 60
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 10 V, ID = 3.0 A,
RGS = 50 Ω
td(off) –55 70
tf–40 60
TEMPFET® BTS 114 A
3 19.02.04
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous source current IS––17 A
Pulsed source current ISM ––68
Diode forward on-voltage
IF = 17 A, VGS = 0 V
VSD – 1.3 1.6
V
Reverse recovery time
IF = IS, diF/dt = 100 A/µs, VR = 30 V
t rr –60 –
ns
Reverse recovery charge
IF = IS, diF/dt = 100 A/µs, VR = 30 V
Q rr –0.10 –
µC
Temperature Sensor
Forward voltage
ITS(on) = 10 mA, Tj = – 55 ... + 150 °C
Sensor override, tp≤ 100 µs
Tj = – 55 ... + 160 °C
VTS(on) –
–
1.4
–
1.5
10
V
Forward current
Tj = – 55 ... + 150 °C
Sensor override, tp≤ 100 µs
Tj = – 55 ... + 160 °C
ITS(on) –
–
–
–
10
600
mA
Holding current, VTS(off) = 5.0 V, Tj = 25 °C
Tj = 150 °C
IH0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
VTS = 5.0 V
TTS(on) –––
°C
Turn-off time
VTS = 5.0 V, ITS(on) = 2 mA
toff 0.5 –2.5
µs
TEMPFET® BTS 114 A
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Examples for short-circuit protection
at Tj = – 55 ... + 150 °C, unless otherwise specified
Parameter Symbol Examples Unit
12–
Drain-source voltage VDS 15 30 –V
Gate-source voltage VGS 7.2 5.2 –
Short-circuit current ISC 37 17 –A
Short-circuit dissipation PSC 550 510 –W
Response time
Tj = 25 °C, before short circuit
tSC(off) 25 25 –
ms
Short-circuit protection ISC = f (VDS)
Parameter:V
GS
DiagramtodetermineISC forTj=–55...+ 150 ° C
Max. gate voltage VGS(SC) = f (VDS)
Parameter: Tj=– 55 ... + 150 °C
TEMPFET® BTS 114 A
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Max. power dissipation Ptot = f (TC)
Typical output characteristics ID = f (VDS)
Parameter:t
p =80µs
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter:V
GS
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC=25°C
TEMPFET® BTS 114 A
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Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID= 9 A, VGS = 10 V
Typ. transfer characteristic
ID = f (VGS)
Parameter:t
p = 80 µs, VDS = – 25 V
Gate threshold voltage VGS(th) = f (Tj)
Parameter:V
DS = VGS,ID=– 1 mA (spread)
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = – 25 V
TEMPFET® BTS 114 A
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Continuous drain current ID=f (TC)
Parameter: VGS ≥ – 10 V
Typ. gate-source leakage current
IGSS =f (TC)
Parameter: VGS = 20 V, VDS = 0
Forward characteristics of reverse diode
IF = f (VSD)
Parameter:T
j,tp = 80 µs (spread)
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f= 1 MHz
TEMPFET® BTS 114 A
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Transient thermal impedance ZthJC = f (tp)
Parameter:D = tp/T
TEMPFET® BTS 114 A
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TO 220 AB Ordering Code
Standard C67078-S5000-A2
TO 220 AB Ordering Code
SMD Version E3044 C67078-S5000-A8
TO 220 AB Ordering Code
Tape & reel E3045 A C67078-S5000-A11
3.7
9.5
9.9
4.6
0.75
1.05
2.542.54
17.5
2.8
12.8
0.5
2.4
13.5
9.2
15.6
1.3
4.4
GPT05155
1)
3) max. 14.5 by dip tinning press burr max. 0.05
2) dip tinning
1) punch direction, burr max. 0.04
3)
2) 1
TEMPFET® BTS 114 A
10 19.02.04
Edition 04.97
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
©
Infineon Technologies AG 2000.
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