General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Dimensions (Unit : mm) 1.6 1.0 0.2 0.2 0.3 0.2 Each lead has same dimensions 0~0.1 0.55 0.15 0.9 0~0.1 0.1Min. 0~0.1 0.1Min. Each lead has same dimensions ROHM : SMT3 (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector ROHM : UMT3 (1) Emitter ROHM : EMT3 (1) Emitter EIAJ : SC-70 (2) Base EIAJ : SC-75A (2) Base JEDEC : SOT-323 (3) Collector JEDEC : SOT-416 (3) Collector Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 Abbreviated symbol: B* 2SC1740S (15Min.) 0.8 (2) (3) 0.22 0.5 (1) 0.13 0~0.1 20.2 30.2 0.2 0.4 0.4 0.2 1.2 0.32 40.2 1.2 0.8 3Min. 0.3Min. 1.6 0.7 0.15 1.1 0.8 0.15 Structure Epitaxial planar type NPN silicon transistor 0.8 2.1 2.8 (2) (3) 0.7 (1) 1.25 1.6 0.5 0.5 (1) 2.0 1.3 (2) (3) 0.3 2.9 (2) (3) 0.4 2SC4617 0.65 0.65 2SC4081 (1) 2SC2412K 0.95 0.95 1.9 Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. 0.45+0.15 -0.05 0.15Max. 2.5 +0.4 -0.1 5 0.5 +0.15 0.45 - 0.05 (1) (2) (3) (1) Base (2) Emitter (3) Collector ROHM : VMT3 ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Abbreviated symbol: B* * Denotes hFE Absolute maximum (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V IC 0.15 A Collector current 2SC2412K, 2SC4081 0.2 Collector power 2SC4617, 2SC5658 dissipation 2SC1740S PC 0.15 W 0.3 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 - - V IC=50A Collector-emitter breakdown voltage BVCEO 50 - - V IC=1mA Emitter-base breakdown voltage Conditions BVEBO 7 - - V IE=50A Collector cutoff current ICBO - - 0.1 A VCB=60V Emitter cutoff current IEBO - - 0.1 A VEB=7V DC current transfer ratio hFE 120 - 390 - VCE(sat) - - 0.4 V Transition frequency fT - 180 - MHz Output capacitance Cob - 2 3.5 pF Collector-emitter saturation voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/3 VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=-2mA, f=100MHz VCE=12V, IE=0A, f=1MHz 2009.12 - Rev.C 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Data Sheet Packaging specifications and hFE Taping Package Code T146 T106 TL T2L TP Basic ordering unit (pieces) 3000 3000 3000 8000 5000 - - - - - - - - - Type hFE 2SC2412K QR 2SC4081 QR - 2SC4617 QR - - 2SC5658 QR - - - 2SC1740S QR - - - - - hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characterristic curves COLLECTOR CURRENT : IC (mA) 10 2 1 25C -55C 5 0.5 0.2 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA Fig.1 Fig.2 1.2 DC CURRENT GAIN : hFE 100 50 20 2 5 10 20 50 100 200 1.6 VCE=5V 25C 200 -55C 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 27A 2/3 24A 21A 6 18A 15A 12A 4 9A 6A 2 3A 0 0 2.0 30A Ta=25C 8 4 IB=0A 12 8 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ) Ta=100C VCE=5V 3V 1V 0.5 1 0.8 500 Ta=25C 10 0.2 0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter propagation characteristics 200 10 IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE 80 0 0.1 0 500 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 20 Ta=100C COLLECTOR CURRENT : IC (mA) VCE=6V COLLECTOR CURRENT : IC (mA) 100 50 Grounded emitter output characteristics ( ) 0.5 Ta=25C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current 2009.12 - Rev.C IC/IB=10 0.2 Ta=100C 25C -55C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.05 0.02 0.01 0.2 Co b 1 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. BASE COLLECTOR TIME CONSTANT : Cc*rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25C f=1MHz IE=0A IC=0A 5 0.2 0.5 1 2 5 10 20 50 100 Ta=25C VCE=6V 500 200 100 50 -0.5 -1 -2 -5 -10 -20 -50 -100 EMITTER CURRENT : IE (mA) Fig.9 Gain bandwidth product vs. emitter current Fig.8 Collector-emitter saturation voltage vs. collector current () 20 2 Ta=100C 25C -55C COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Cib IC/IB=50 0.1 COLLECTOR CURRENT : IC (mA) 10 Data Sheet TRANSITION FREQUENCY : fT (MHz) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Ta=25C f=32MHZ VCB=6V 200 100 50 20 10 -0.2 -0.5 -1 -2 -5 -10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current 3/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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