2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID 1.5 A 3.0 A 1.5 A 20 W Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 2 1 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C 2 2SK1880(L), 2SK1880(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 -- -- V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 30 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 10 A VGS = 25 V, VDS = 0 Zero gate voltage drain current IDSS -- -- 100 A VDS = 500 V, VGS = 0 Gate to source cutoff voltage 2.0 -- 3.0 V ID = 1 mA, VDS = 10 V Static drain to source on state RDS(on) resistance -- 6.5 8.0 ID = 1 A 1 VGS = 10 V* Forward transfer admittance |yfs| 0.85 1.4 -- S ID = 1 A 1 VDS = 20 V* Input capacitance Ciss -- 250 -- pF VDS = 10 V VGS = 0 f = 1 MHz Output capacitance Coss -- 55 -- pF Reverse transfer capacitance Crss -- 8 -- pF Turn-on delay time td(on) -- 10 -- ns Rise time tr -- 25 -- ns Turn-off delay time td(off) -- 35 -- ns Fall time tf -- 30 -- ns Body to drain diode forward voltage VDF -- 0.95 -- V IF = 1.5 A, VGS = 0 Body to drain diode reverse recovery time trr -- 350 -- s IF = 1.5 A, VGS = 0, diF / dt = 100 A / s Note VGS(off) ID = 1 A VGS = 10 V RL = 30 1. Pulse Test 3 2SK1880(L), 2SK1880(S) Power vs. Temperature Derating Maximum Safe Operation Area Pulse Test 4.5 V 1.2 4V 0.8 0.4 0 VGS = 3.5 V 10 20 30 40 10 300 1000 2.0 Drain Current I D ( A ) Drain Current I D (A) 1.6 10 V 25 C ) Typical Transfer Characteristics Typical Output Characteristics 5V = Drain to Source Voltage V DS (V) Case Temperature Tc (C) 2.0 ) 150 (T c ot Ta = 25C 0.01 0.1 0.3 1 3 sh 100 s (1 50 m s s s O pe ra tio n 0.03 0 50 Drain to Source Voltage V DS (V) 4 1 m 0.1 DC 0 10 10 1 0.3 10 10 O a pe by rea rat R is ion DS lim in (o ite th n) d is 20 3 = Drain Current I D (A) 10 PW Channel Dissipation Pch (W) 30 1.6 Pulse Test VDS = 20 V 1.2 0.8 75C Tc = 25C -25C 0.4 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 2SK1880(L), 2SK1880(S) Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 16 I D = 1.5 A 12 8 1A 4 0.5 A 0 4 8 12 16 100 Static Drain to Source on State Resistance R DS (on) ( ) Drain to Source Saturation Voltage V DS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 10 5 2 5 Forward Transfer Admittance | yfs | (S) Static Drain to Source on State Resistance R DS (on) ( ) 20 ID = 1 A 0.5 A 4 -40 0 40 80 120 Case Temperature Tc (C) 160 1 2 5 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 8 0.5 Drain Current I D (A) Gate to Source Voltage VGS (V) 12 VGS = 10 V 1 0.05 0.1 0.2 20 16 Pulse Test 2 Pulse Test V DS = 20 V Tc = -25C 1 0.5 75C 0.2 25C 0.1 0.05 0.02 0.05 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 2SK1880(L), 2SK1880(S) Typical Capacitance vs. Drain to Source Voltage 5000 2000 1000 1000 di/dt = 100 A/s VGS = 0 Ta = 25C Pulse Test VGS = 0 f = 1 MHz Ciss Capacitance C (pF) Reverse Recovery Time t rr (ns) Body to Drain Diode Reverse Recovery Time 500 200 100 Coss 10 100 Crss 50 0.1 0.2 1 0.5 1 2 5 10 0 Reverse Drain Current I DR (A) 10 20 30 40 50 Drain to Source Voltage V DS (V) Switching Characteristics 500 VGS I D = 1.5 A 800 VDD = 100 V 250 V 400 V 600 400 VDS VDD = 100 V 250 V 400 V 4 8 12 4 16 Gate Charge Qg (nc) 6 12 8 200 0 16 0 20 Switching Time t (ns) 20 1000 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VGS = 10 V PW = 2 s duty < = 1% VDD = : 30 V 200 100 t d (off) 50 20 tr tf t d (on) 10 5 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 10 2SK1880(L), 2SK1880(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 2.0 Pulse Test 1.6 1.2 0.8 VGS = 10 V 0.4 0 0 V, -5 V 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (A) 7 2SK1880(L), 2SK1880(S) Notice When using this document, keep the following in mind: 1. 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