Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SBA-4086(Z)
DCto5GHz, CASCADABLE InGaP/GaAs HBT
MMIC AMPLIFIER
RFMD’s SBA-4086 is a high performance InGaP/GaAs Heterojunction
Bipolar Transistor MMIC Amplifier. A Darlington configuration designed
with InGaP process technology provides broadband performance up to
5GHz with excellent thermal performance. The heterojunction increases
breakdown voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in higher suppres-
sion of intermodulation products. Only a single positive supply voltage, DC-
blocking capacitors, a bias resistor, and an optional RF choke are required
for operation.
Gain and Return Loss vs Frequency
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0123456
Frequency (GHz)
dB
S21
s22
s11
IP3=33.5dBm at 1950MHz
POUT=12.3dBm at -45dBc
ACP IS-95 1950MHz
Robust 1000V ESD, Class 1C
Operates From Single Supply
Patented Thermal Design
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Terminals
EDS-102821 Rev E
9
RoHS Compliant and Pb-Free Product (Z Part Number)
Package: SOT-86
SBA-4086(Z)
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 13.3 14.8 16.3 dB 850 MHz
12.7 14.2 15.7 dB 1950MHz
Output Power at 1dB Compression 19.1 dBm 850MHz
17.5 19.0 dBm 1950MHz
Output Third Order Intercept Point 36.5 dBm 850MHz
31.5 33.5 dBm 1950MHz
Output Power 12.3 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Channels
Bandwidth 5000 MHz Return Loss>10dB
Input Return Loss 14.0 21.0 dB 1950MHz
Output Return Loss 14.0 20.5 dB 1950MHz
Noise Figure 4.8 5.8 dB 1950MHz
Device Operating Voltage 4.6 5.0 5.4 V
Device Operating Current 72 80 88 mA
Thermal Resistance (junction to lead) 102 °C/W
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0 dBm, RBIAS=39Ω, TL=25°C, ZS=ZL=50Ω
2 of 6 EDS-102821 Rev E
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SBA-4086(Z)
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter Rating Unit
Device Current (ID)130mA
Device Voltage (VD)6V
RF Input Power +17 dBm
Junction Temp (TJ)+150°C
Operating Temp Range (TL) -40 to +85 °C
Storage Temp +150 °C
Operating Dissipated Power 0.65 W
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l and TL=TLEAD
Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz
Small Signal Gain dB 15.2 15.0 14.8 14.2 12.4 12.1
Output Third Order Intercept
Point dBm 37.1 36.3 36.5 33.5 32.7 29.7
Output Power at 1dB
Compression dBm 19.0 19.1 19.1 19.0 18.3 16.4
Input Return Loss dB 36 28 25 21 19.7 17
Output Return Loss dB 21 21 21.0 20.5 19.6 20.2
Reverse IsolationdB181818181920
Noise Figure dB 4.7 4.7 4.6 4.8 4.9 5.0
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39Ω, TL=25°C, ZS=ZL=50Ω
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
N F vs Frequency
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
00.511.522.533.5
Frequency (G H z)
dB
+25c
-40c
+85c
IP3 vs Frequency
22
24
26
28
30
32
34
36
38
40
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
dBm
+25c
-40c
+85c
P1dB vs F requency
11
13
15
17
19
21
00.511.522.533.5
Frequency (GHz)
dBm
+25c
-40c
+85c
3 of 6EDS-102821 Rev E
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SBA-4086(Z)
|S11| vs. Frequency
-40
-35
-30
-25
-20
-15
-10
-5
0
0123456
Frequency (GHz)
s11(dB)
+25c
-40c
+85c
|S21| vs. Frequency
6
7
8
9
10
11
12
13
14
15
16
0123456
Frequency (GHz)
s21(dB
)
+25c
-40c
+85c
|S12| vs. Frequency
-24
-22
-20
-18
-16
-14
-12
0123456
Frequency (GHz)
s12(dB)
+25c
-40c
+85c
|S22| vs. Frequency
-25
-20
-15
-10
-5
0
0123456
Frequency (GHz)
s22(dB)
+25c
-40c
+85c
SBA -4086 IS-95 @ 850M Hz
A dj. Channel Pwr. Vs. Channel O utput Pwr.
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
7 8 9 1011121314151617
dBm
dBc
+25c
-40c
+85c
7
SBA -4086 IS-95 @ 1950M Hz
A dj. Cha nnel P wr. Vs . Chan nel O u tput Pw r.
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
7 8 9 10 11 12 13 14 15 16 17
dB
m
dBc
+25c
-40c
+85c
4 of 6 EDS-102821 Rev E
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SBA-4086(Z)
Basic Application Circuit
Evaluation Board Layout
Mounting Instructions:
1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1
ounce copper on both sides.
Application Circuit Element Values
Recommended Bias Resistor Values for ID=80mA, RBIAS =(VS-VD) /ID
Reference Designator 500MHz 850MHz 1950MHz 2400MHz 3500MHz
CB220pF 100pF 68pF 56pF 39pF
CD100pF 68pF 22pF 22pF 15pF
LC68nH 33nH 22nH 18nH 15nH
Supply Voltage (VS)7.5V8V10V12V
RBIAS 33Ω39Ω68Ω91 Ω
Note: RBIAS provides DC bias stability over temperature.
RF in RF out
1 uF
CB
CB
CD
VS
RBIAS
LC
1
2
3
4
1000
pF
SBA-4086
1 uF
RBIAS
BA4
1000 pF
CB
CB
CD
LC
VS
5 of 6EDS-102821 Rev E
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SBA-4086(Z)
PCB Pad Layout
Pin Function Description
1RF IN
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of opera-
tion.
2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as
possible.
3RF OUT/BIAS
RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for
proper operation.
PCB Pad Layout
Dimensions in inches [millimeters]
6 of 6 EDS-102821 Rev E
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SBA-4086(Z)
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Part Identification
The part will be marked with a “BA4” or “B4Z” designator on the top surface of the package.
Ordering Information
Part Number Reel Size Devices/Reel
SBA-4086 7” 1000
SBA-4086Z 7” 1000
1
2
3
4
B4Z
1
2
3
4
BA4
