_ FAIRCHILD August 1998 SEMICONDUCTOR tT NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor NDT3055L General Description Features These logic level N-Channel enhancement mode power B 4A, 60 V. Rogoy = 0.100 2 @ V,,= 10 V, field effect transistors are produced using Fairchild's R =0.1202 @V..=45V. proprietary, high cell density, DMOS technology. This PSICN) as very high density process is especially tailored to = Low drive requirements allowing operation directly from logic minimize on-state resistance and provide superior drivers. Vasc < 2V. switching performance, and withstand high energy pulse : , ; in the avalanche and commutation modes. These devices # High density cell design for extremely low Rosioy- are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. High power and current handling capability in a widely used surface mount package. SOT-223 SOT-223* G (3232) SOT-223 G Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol | Parameter NDT3055L Units Voss Drain-Source Voltage 60 Voss Gate-Source Voltage - Continuous +20 I Maximum Drain Current - Continuous (Note 1a) 4 - Pulsed 25 P, Maximum Power Dissipation (Note 1a) 3 Ww (Note 1b} 1.3 (Note 1c) 14 Ti Tete Operating and Storage Temperature Range -65 to 150 Cc THERMAL CHARACTERISTICS Pasa Thermal Resistance, Junction-to-Ambient (noe ta) 42 Cw Rac Thermal Resistance, Junction-to-Case (Note 1) 12 Cw * Order option J23Z for cropped center drain lead. 4-282 NDT3055L Rev.A1 Electrical Characteristics (T, = 25C unless otherwise noted) Symbol _ [Parameter | Conditions | min I Typ | Max | Units OFF CHARACTERISTICS BV ose Drain-Source Breakdown Voltage Veg = 0 V, |= 250 pA 60 Vv ABV, <</AT, Breakdown Voltage Temp. Coefficient |,= 250 YA, Referenced to 25C 55 mvPC loos Zero Gate Voltage Drain Current Vog = 60 V, Veg= OV 1 uA T,=125C 50 yA lesse Gate - Body Leakage, Forward Vag = 20 V, Vag =O V 100 nA lossa Gate - Body Leakage, Reverse Veg = -20V, Vog= OV -100 nA ON CHARACTERISTICS (note 2) Vesey Gate Threshold Voltage Vos = Veg: | = 250 pA 1 1.6 2 V Moon JAT, Gate Threshold Voltage Temp. Coefficient |,= 250 YA, Referenced to 25 C 4 mv PC Psion) Static Drain-Source On-Resistance Veg = 10V, 1F=4A 0.07 0.1 Q T,=125C 0.125 | 0.18 Vig =45V, L=3.7A 0.103 | 0.12 levony On-State Drain Current Vog = 55 V5 = 10V 10 Ges Forward Transconductance Vos=5V, L=4A 7 s DYNAMIC CHARACTERISTICS C., Input Capacitance Vg =25, Veg = OV, 345 pF C.., Output Capacitance f = 1.0 MHz 110 oF Cc. Reverse Transfer Capacitance 30 pF SWITCHING CHARACTERISTICS (note 2) toon Tum - On Delay Time Vip = 25, |, = 1A, 5 20 ns t Tum - On Rise Time Vos =10V, Rosy =6.Q 75 20 ns toxom Tum - Off Belay Time 20 50 ns t Tum - Off Fall Time 7 20 ns Q, Total Gate Charge Vog = 40 V, IL =4 A, 13 20 nc Q, Gate-Source Charge Vos = 10V 17 nc Q,, Gate-Drain Charge 3.2 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 2.5 A Vop Drain-Source Diode Forward Voltage Vag = OV, I= 2.5A (Note2) 0.8 12 Vv Notes: 1. R,,,, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. A,,. is guaranteed by design while R,,., is determined by the user's board design. a. 42C/W when mounted on a 1 in pad of b. 95C/W when mounted ona (0.066 in J c. 110C/W when mounted on a 0.00123 pad of 20z Cu. in pad of 20z Cu iN 202 Cu. Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300ys, Duty Cycle < 2.0% 1ISSOELON 4-283 NDTSO55L Rev.A1 NDT3055L Typical Electrical Characteristics < Veg= 10V 5 6.0V Gi 8.0V ac ac > oO Ww Qo rc 3 9 Zz 3.5V zt ec oa a 3.0V 0 1 2 3 4 Vpg : DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.8 Wu g Z 18 [Vog=10V 3 a GS N z zi4 2S 8 w 12 os a Zz GB 1 6 cz =z 0.8 a 06 -50 25 9 25 50 75 100 125 T,, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 10 Porn = y=50f// 7 [ Vps = 5V J be = | ff 125C = dl / Zz ut . ze oF J 2 oO 2 gz 4 xc i s | 2 yi ft... o- o 1 1.5 2 25 3 3.5 4 45 5 Vg. GATE TO SOURCE VOLTAGE (V) Figure . Transfer Characteristics. R ps(on). NORMALIZED DRAIN-SOURCE ON-RESISTANCE R ps(on). ON-RESISTANCE (OHM) 150 REVERSE DRAIN CURRENT (A) Is nD eo > to S od 5 10 15 20 25 |p, ORAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. S Ny o o ip & 2 Ny S a Ta =125C o | es = & 8 2 & 2 4 6 8 10 Vg GATE TO SOURCE VOLTAGE (Vv) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 O41 2 g 0.001 0.0001 0 02 0.4 0.6 0.8 1 12 14 Ven. BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Current and Temperature. 4-284 NDT3055L Rev.A1 Typical Electrical Characteristics (continued) oO 1000 8 ee if ol 2 = we lo a Vg = 10V Ve 500 a 2 BF bom - ae S30V 4 c r~ a 3 : 40v S200 8) 4 g c | e 100 FE $ ea | a ui 2 50 & oO : o oe f=1MHz 3 J | Sy Near av 0 ~ 10 0 2 4 6 8 10 42 14 0.1 0.3 1 4 10 30 60 Qg . GATE CHARGE (nC) Vig. DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 80. 4 = 10 204 SINGLE PULSE = 7; 60 Resa =110 CW a 3 Ta=25C e = c Oo > S 40 0.3 2 Oo Vg = 10V 2 SINGLE PULSE === 20 0.03, Ryja= 110 CW 0.01 bmn 0 O41 02 0.5 1 2 5 10 30 60 100 6.001 0.01 O41 1 10 100 300 Vos , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.2 a4 0.05 Raya =n * Rosa Raia = 110 CW 0.02 == 0.02: 0.01 = 0.005 - r(t}, NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 9.002 0.001 - 0.0001 0.001 0.01 of 1 10 100 300 t,. TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. 4-285 NDTSO55L Rev.A1