DPG 60 C 300 HJ V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: ISOPLUS247 rIndustry standard outline rDCB isolated backside rIsolation Voltage 3000 V rEpoxy meets UL 94V-0 rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved typ. max. Unit 300 V VR = 300 V 1 A VR = 300 V TVJ = 150 C 0.2 mA TVJ = 25 C 1.26 V 1.54 V 0.96 V 1.26 V TC = 135C 30 A TVJ = 175C 0.61 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A rectangular TVJ = 150 C d = 0.5 for power loss calculation only R thJC t rr min. TVJ = 25 C TVJ = 25 C -55 9.6 m 1.05 K/W 175 C TC = 25 C 145 W t = 10 ms (50 Hz), sine TVJ = 45C 450 A TVJ = 25 C 3 A IF = TVJ = 125C 8.5 A 30 A; VR = 200 V -di F /dt = 200 A/s VR = 150 V; f = 1 MHz TVJ = 25 C 35 ns TVJ = 125C 65 ns TVJ = 25 C 60 pF Data according to IEC 60747and per diode unless otherwise specified 20100125a DPG 60 C 300 HJ Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin typ. 1) max. Unit 70 0.25 -55 Weight A K/W 150 C 6 FC mounting force with clip VISOL isolation voltage dS creapage distance on surface mm dA striking distance through air mm 1) 20 g 120 N t = 1 second 3600 V t = 1 minute 3000 V IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo D P G 60 C 300 HJ IXYS Part No. Date Code UL listed = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] ISOPLUS247 (3) abcd Order Code Ordering Standard Part Name DPG 60 C 300 HJ Similar Part DPG60C300HB DPG60C300QB DPG60C300PC DPF60C300HB DPG80C300HB IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Marking on Product DPG60C300HJ Package TO-247AD (3) TO-3P (3) TO-263AB (D2Pak) TO-247AD (3) TO-247AD (3) Delivering Mode Tube Base Qty Code Key 30 505494 Voltage Class 300 300 300 300 300 Data according to IEC 60747and per diode unless otherwise specified 20100125a DPG 60 C 300 HJ Outlines ISOPLUS247 Die konvexe Form des Substrates ist typ. < 0.04 mm uber der Kunststoff-foberflache der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side Die Gehauseabmessungen entsprechen dem Typ TO-247 AD gema JEDEC auer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100125a DPG 60 C 300 HJ 0.6 80 70 60 IF = 60 A 30 A 15 A 16 IF = 60 A 30 A 15 A 0.5 0.4 12 50 IF [A] Qrr 40 IRM 0.2 [A] [C] TVJ = 150C 30 0.3 8 20 4 25C TVJ = 125C 0.1 10 TVJ = 125C VR = 200 V VR = 200 V 0.0 0.0 0.4 0.8 1.2 VF [V] 1.6 0 0 2.0 200 400 600 400 TVJ = 125C 80 1.4 600 Fig. 3 Typ. reverse recovery current IRM versus -diF /dt 700 1.6 VFR tfr 600 VR = 200 V 1.2 7 6 500 5 tfr 400 [ns] 300 4 200 2 60 1.0 trr [ns] 40 Kf 0.8 IF = 60 A 30 A 15 A 0.6 I RM 0.4 VFR 3 TVJ = 125C VR = 200 V IF = 30 A 20 Qrr 0.2 100 0.0 0 0 40 80 120 160 0 0 TVJ [C] Fig. 4 Dynamic parameters Qrr, IRM versus T VJ 12 IF = 60 A 6 30 A 15 A 600 0 200 400 -diF /dt [A/s] [V] 1 0 600 Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF /dt 1.2 VR = 200 V 8 200 400 -diF /dt [A/s] Fig. 5 Typ. reverse recovery time trr versus -diF /dt TVJ = 125C 10 [J] 200 -diF /dt [A/s] Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF Erec 0 -diF /dt [A/s] 1.0 0.8 ZthJC 0.6 [K/W] 4 0.4 2 0.2 0 0.0 0 200 400 -diF /dt [A/s] 600 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved 1 10 100 t [ms] 1000 10000 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified 20100125a