DPG 60 C 300 HJ
ns
HiPerFRED²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
450
IA
V
F
1.26
R1.05 K/W
V
R
=
1 2 3
min.
30
t = 10 ms
Applications:
V
RRM
V300
1T
VJ
V°C=
T
VJ
°C=mA0.2
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=135°C
d =
P
tot
145 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
=
=300
30
30
T
VJ
=45°C
DPG 60 C 300 HJ
V
A
300
V300
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.54
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
150
V
F0
V0.61T
VJ
=175°C
r
F
9.6
f = 1 MHz = °C25
mΩ
V0.96T
VJ
=°C
I
F
=A
V
30
1.26
I
F
=A60
I
F
=A60
2x
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
3A
T
VJ
=°C
reverse recovery time
A8.5
35
65
ns
(50 Hz), sine
t
rr
=35 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
ISOPLUS247
●
rIndustry standard outline
●
rDCB isolated backside
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
µA
60150 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20100125a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
DPG 60 C 300 HJ
I
RMS
A
per pin 70
R
thCH
K/W0.25
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N120
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DPG 60 C 300 HJ 505494Tube 30
Product Markin
g
Date Code
Part No.
Logo
UL listed
IXYS
abcd
Order Code
D
P
G
60
C
300
HJ
Part number
Diode
HiPerFRED
extreme fast
Common Cathode
ISOPLUS247 (3)
=
=
=
DPG60C300HB
DPG60C300QB
DPG60C300PC
DPF60C300HB
TO-247AD (3)
TO-3P (3)
TO-263AB (D2Pak)
TO-247AD (3)
Similar Part Package
1)
1
Marking on Product
DPG60C300HJ
300
300
300
300
Voltage Class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
RMS
DPG80C300HB TO-247AD (3) 300
V
ISOL
V3600
t = 1 second
V3000
t = 1 minute
isolation voltage
d
S
mm
mm
creapage distance on surface
d
A
striking distance through air
IXYS reserves the right to change limits, conditions and dimensions.
©
20100125a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
DPG 60 C 300 HJ
Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff-f-
oberfläche der Bauteilunterseite
The convex bow of substr ate is typ. < 0.04 mm over plast ic sur f ace level of
device bottom side
Die Gehäuseabmessungen entsprechen demTyp TO-247 AD gemäß JEDEC
außer Schraubloch und L
max
.
This drawing will meet all di mensions r equiar ement of JEDEC outlineTO-247AD
except screw hole and except L
max
.
Outlines ISOPLUS247
IXYS reserves the right to change limits, conditions and dimensions.
©
20100125a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
DPG 60 C 300 HJ
0.0 0.4 0.8 1.2 1.6 2.0
10
20
30
40
50
60
70
80
0 200 400 600
0
20
40
60
80
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
04080120160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
K
f
T
VJ
[°C] -di
F
/dt [A/µs]
t[ms]
0 200 400 600
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
0 200 400 600
0
4
8
12
16
0 200 400 600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Q
rr
[µC]
V
F
[V] -di
F
/dt [A/µs]
Z
thJC
[K/W]
I
F
= 60 A
30 A
15 A
I
RM
Q
rr
V
FR
t
fr
T
VJ
= 150°C
Fig. 1 Forward current I
F
versus
forward voltage V
F
Fig. 2 Typ. reverse recovery charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recovery current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
rr
,I
RM
versus T
VJ
Fig. 5 Typ. reverse recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage V
FR
& forward recovery time t
fr
vs. di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[A]
-di
F
/dt [A/µs]
I
RM
[A]
t
rr
[ns]
-di
F
/dt [A/µs]
t
fr
[ns] V
FR
[V]
0 200 400 600
0
2
4
6
8
10
12
E
rec
[µJ]
-di
F
/dt [A/µs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
I
F
= 60 A
30 A
15 A
I
F
= 60 A
30 A
15 A
I
F
= 60 A
30 A
15 A
T
VJ
=125°C
V
R
= 200 V
T
VJ
= 125°C
V
R
= 200 V
T
VJ
= 125°C
V
R
=200 V
T
VJ
=125°C
V
R
= 200 V
T
VJ
= 125°C
V
R
= 200 V
I
F
=30 A
IXYS reserves the right to change limits, conditions and dimensions.
©
20100125a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved