HIGH DATA RATE LOW-NOISE AMPLIFIERS FEATURES Optimized for 10 Gbit Fiber (~ . \ Optic Applications a Designed to Meet the SONET and SDH Standards MITEQs JSMF Series of broadband amplifiers utilizes hybrid MIC techniques and discrete GaAs FETs to support ultra-broadhand appli- cations, such as SONET and SOH-based fiber optic communication systems. These GaAs FET amplifiers include all bias and coupling networks for immediate installation into sys- tems, and are aligned and measured in a 50 ohm environment. Standard designs support low-noise applications for use with photodiode detectors, however higher power designs for laser diode driver requirements are available upon request. 20.1 pS/aiv ELECTRICAL SPECIFICATIONS [50 12) Bandwidth... 2 kHz to 14 GHz POWEP ain oo... 25 dB minimum Gain flatness 2... +1.5 dB maximum Noise figure PAC): JSMF3-02K150-30-10P....... 3 dB maximum JSMF3-02K150-40-10P....... 4 dB maximum JSMF3-02K150-50-10P....... 5 dB maximum n n Group delay ....... eee +40 pS ms aa nea nee See a UNI eee ad Rise time oo. eee <70pS Fall time ..... cece teeeeene < 30 pS Overshoot 10 GbitS ee < 10% 2.5 GbIS ooo eee < 10% Output pwr. at 1 dB compr. ..... +10 dBm minimum Input VSWR... eee 2:1 maximum Output VSWR... 2:1 maximum * Noise figure specified above 500 MHz. \ _ S10 ete tis ie ea Oley tO ars { IN (dB) GAIN RETURN LOSS Oo a 4 PY an a. oO \ RETURN LOSS (dB) ' 1 a Ln oO e aq S Mo oO y ro an hk y co o QO 3 6 9g FREQUENCY (GHz) 12 15 18 0 3 6 9 12 FREQUENCY {GHz} OUTLINE DRAWING 0B ee 7 so 080 ~ --.080 i: Hoo nd oe ~~ 20 490 q 98 woo 58 an MOUNTING ~ 11 SURFACE wi be 190 #00 Dia, THRU CTT (TYP. 5 PLACES) ho. Sy . } : 174 2.001 031 DIA. NOTE: roy DIMENSIONS ARE IN INCHES FROM BOTTOM OF PIN = Sone TOLERANCES AS FOLLOWS: TQ MOUNTING SURFACE XX 4.01 9 PLACES XXX = .008 INP PLACES) PARTIAL VIEW A~A. ROTATED 180 \ HIGH DATA RATE LOW-NOISE AMPLIFIERS