NEC NPN SILICON HIGH FREQUENCY TRANSISTOR UPABTAT FEATURES OUTLINE DIMENSIONS (units in mm) * SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE688 Die in a 2 mm x 1.25 mm package * LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz 2640. * HIGH GAIN BANDWIDTH: ft = 9 GHz Pot 2e sot HIGH COLLECTOR CURRENT: 100 mA 0.65 DESCRIPTION 20202] $_ ee +. (All Leads) 1.3 2 tL bw 2.1+0.1 The UPA814T is two NPN high frequency silicon epitaxial 5 transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- -+= |] Y_] ured for either dual transistor or cascode operation. The high 3 4 fT, low voltage bias and small size make this device suited for various hand-held wireless applications. ABSOLUTE MAXIMUM RATINGS! ca = 25C) 0.90.1 + SYMBOLS PARAMETERS UNITS | RATINGS | 0.7 4 40.10 Vcso__| Collector to Base Voltage Vv 9g ! 1 9.15. 0.05 VcEO Collector to Emitter Voltage Vv 6 0~0.1 VeBo Emitter to Base Voltage Vv 2 Ic Collector Current mA 100 Pr Total Power Dissipation PIN OUT . 1 Die mw 110 1, Collector Transistor 1 2 Die mW 200 2. Base Transistor 2 - 3. Collector Transistor 2 TJ Junction Temperature i @ 150 4. Emitter Transistor 2 TsTG@ Storage Temperature C -65 to +150 5. Emitter Transistor 1 Note: 1.Operation in excess of any one of these parameters may 6. Base Transistor 1 result in permanent damage. Note: Pin 3 is identified with a circie on the bottom of the package. ELECTRICAL CHARACTERISTICS (t= 25c) PART NUMBER UPA814T PACKAGE OUTLINE $06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX Icso Collector Cutoff Current at Vc = 5V, le = 0 pA 0.1 lEso Emitter Cutoff Current at Vea = 1 V, Ic =0 pA 0.1 hre! Forward Current Gain at VceE = 1V,Ilc=3mA 80 110 160 fr Gain Bandwidth at Vce = 3 V, ic= 20 mA, f= 2 GHz GHz 9.0 Cre? Feedback Capacitance at Vcs = 1 V, le = 0, f= 1 MHz pF 0.75 0.85 iSziel* Insertion Power Gain at Vce = 3 V, Ic =20 mA, f = 2 GHz dB 6.5 NF Noise Figure at VcE = 3 V, Ic= 7 mA, f = 2 GHz dB 1.5 hrevhre2 | hre Ratio: NFE1 = Smaller Value of Q1, or Q2 0.85 hFe2 = Larger Value of Q1 or Q2 Notes: 1. Pulsed measurement, pulse width < 350 ps, duty cycle < 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA814T-T1, 3K per reel. 3-267 UPA814T TYPICAL PERFORMANCE CURVES (1: = 25c) Collector Current, Ic (mA) Total Power Dissipation, PT (mW) Gain Bandwidth Product, fr (GHz) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air 200 <6 Coy) 4, N3, ws % py 00 N NS NA \ 0 50 100 150 Ambient Temperature, Ta (C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 200 pA 1 1 180 pA tod 160 pA Io 140 pA i t 120 pA 100 pA 1 | 80UA 14 60 pA tot 40 pA Id la=20pA 8 1 2 3 4 5 8 Collector to Emitter Voltage, Vce (V) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE =1V f= 2 GHz 1 2 3 5 7 10 Collector Current, Ic (mA) 3-268 DC Current Gain, hre Collector Current, Ic (mA) Insertion Power Gain, 1S21el2 (dB) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.8 Base to Emitter Voltage, Vee (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VcE=1V 100 Qo COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VcE=tV 9102 #08 %1 2 10 20 Coltector Current, Ic (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT VceE=1V f= 2 GHz 1 2 3 5 Collector Current, Ic (mA) 50 100 7 10 UPA814T TYPICAL PERFORMANCE CURVES (1a = 25C) NOISE FIGURE vs. FEEDBACK CAPACITANCE vs. COLLECTOR CURRENT COLLECTOR TO BASE VOLTAGE 3 UT Ty f= 1 MHz VCE=1V ~ a 2 _ t=2GHz ul 8 & a e g o N\ 8 S IN Le NY 6 a SQ f21Ghz ~~ 4 % z Ln" 2 1 3 oO ML 0 1 2 3 5 7 10 1 5 10 20 Collector Current, Ic (mA) Collector to Base Voltage, Vcs (V) MAXIMUM AVAILABLE GAIN/ANSERTION NOISE FIGURE vs. POWER GAIN vs. FREQUENCY FREQUENCY S Voce 1 VcE=1V Qa lc=5mA 16 ic=5 mA =a 30 ~~ = MAG s OF L_ Sc Ww z zs NON GO 2 wN 5 D 1S21El? NN 2 1 5 NI N we se NN 3 i NIN 6 25 _ z Es NX Es N 8 4 05 = 0.1 0.5 1 5 0.1 05 1.0 2 Frequency, f (GHz) Frequency, f (GHz) ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING UPA814T-T1 3000 Tape & Reel 3-269