August 2008. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS1656– N-Channel Trench MOSFET 30V, 7.2A,28mΩ
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
TC=25oC 7.2 A
Continuous Drain Current(1) TC=70oC ID 6.2 A
Pulsed Drain Current IDM 30 A
TC=25oC 2
Power Dissipation TC=70oC PD 1.44 W
Single Pulse Avalanche Energy(2) EAS 20 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(Steady-State)(1) RθJA 100
Thermal Resistance, Junction-to-Case RθJC 60
oC/W
MDS1656
Single N-Channel Trench MOSFET 30V, 7.2A, 28mΩ
General Descript
ion
The MDS1656 uses advanced MagnaChip’s trench MOSFET
Technology to provide high performance in on-state resistance,
switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in
the application.
Features
VDS = 30V
ID = 7.2A @VGS = 10V
RDS(ON)
< 28mΩ @VGS = 10V
< 42mΩ @VGS = 4.5V
Applications
Inverters
General purpose applications
1(S)
2(S)
3(S)
4(G)
8(D)
7(D)
6(D) 5(D)
D
G
S
August 2008. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS1656– N-Channel Trench MOSFET 30V, 7.2A,28mΩ
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDS1656R -55~150oC SO-8 Tape & Reel Halogen Free
Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics Symbol Test Condition Min
Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - -
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0
1.9 3.0
V
Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - 1
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - 0.1 µA
VGS = 10V, ID = 6.9A - 21.5 28
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 5.0A - 31.5 42 mΩ
On-State Drain Current ID(ON) VDS = 5V, VGS = 4.5V 20 - - A
Forward Transconductance gFS VDS = 5V, ID = 6.9A 10 15.4 - S
Maximum Body-Diode Continuous Current - -
Dynamic Characteristics
Total Gate Charge Qg - 6.94 -
Gate-Source Charge Qgs - 1.54 -
Gate-Drain Charge Qgd
VDS = 15V, ID = 6.9A,
VGS = 10V
- 1.4 -
nC
Input Capacitance Ciss - 334 -
Reverse Transfer Capacitance Crss - 48 -
Output Capacitance Coss
VDS = 15V, VGS = 0V,
f = 1.0MHz
- 83 -
pF
Turn-On Delay Time td(on) - 3.5 -
Turn-On Rise Time tr - 25.4 -
Turn-Off Delay Time td(off) - 14.2 -
Turn-Off Fall Time tf
VGS = 10V ,VDS = 15V,
RL = 2.2Ω, RGEN = 3Ω
- 10.5 -
ns
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.75
1.0 V
Body Diode Reverse Recovery Time trr - 16.5
20 ns
Body Diode Reverse Recovery Charge Qrr IF = 6.9A, di/dt = 100A/µs - 7.8 10 nC
Notes :
1. Surface mounted RF4 board with 2oz. Copper..
2. Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V.
August 2008. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS1656– N-Channel Trench MOSFET 30V, 7.2A,28mΩ
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On
-
Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On
-
Resistance Variation with
Temperature
Fig.4 On
-
Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode
Forward Voltage
Variation with Source Current and
Temperature
0 1 2 3 4 5
0
5
10
15
20
25
30
10V 6.0V
5.0V
4.5V
4.0V
3.5V
VGS=3V
ID (A)
V
DS
(Volts)
0 5 10 15 20
10
20
30
40
50
60
RDS(ON) [mΩ ]
-ID
[A]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS=10V
VGS=4.5V
Notes :※
1. VGS = 10 V
2. ID = 20 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
2 4 6 8 10
10
20
30
40
50
60
70
TA = 25℃
TA = 125℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0 1 2 3 4 5
0
5
10
15
20
125℃
25℃
ID (A)
VGS (Volts)
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
1
10
25℃
125℃
IS [A]
VSD [V]
August 2008. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS1656– N-Channel Trench MOSFET 30V, 7.2A,28mΩ
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.1
0
Maximum Drain Current
v
s. C
ase
Temperature
Fig.1
1
Transient Thermal Response
Curve
0 2 4 6 8
0
2
4
6
8
10
Note : I※D = 20A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
0 5 10 15 20 25 30
0
50
100
150
200
250
300
350
400
450
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
10-1 100101102
10-1
100
101
102
1s
100 µs
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
ID, Drain Current [A]
TC, Case Temperature [ ]℃
10-6 10-5 10-4 10-3 10-2 10-1 100101102103104
10-1
100
101
102
Notes :※
Duty Factor, D=t1/t2
PEAK TJ = PDM
* Zθ JC
* Rθ JC
(t) + TC
RΘ JA
=100 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Normalized Thermal Response
t1, Rectangular Pulse Duration [sec]
August 2008. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS1656– N-Channel Trench MOSFET 30V, 7.2A,28mΩ
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
August 2008. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS1656– N-Channel Trench MOSFET 30V, 7.2A,28mΩ
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
