0 VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 (v1.5) July 17, 2002 0 0 Production Product Specification Features * * * * Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels) - PCI compliant 3.3 V, 32/64-bit, 33/66-MHz Sophisticated SelectRAM+TM Memory Hierarchy - 294 Kb of internal configurable distributed RAM - Up to 1,120 Kb of synchronous internal block RAM - True Dual-Port block RAM - Memory bandwidth up to 2.24 Tb/s (equivalent bandwidth of over 100 RAMBUS channels) - Designed for high-performance Interfaces to external memories * 200 MHz ZBT* SRAMs * 200 Mb/s DDR SDRAMs Highly Flexible SelectIO+TM Technology - Supports 20 high-performance interface standards - Up to 556 singled-ended I/Os or up to 201 differential I/O pairs for an aggregate bandwidth of >100 Gb/s Complete Industry-Standard Differential Signalling Support - LVDS (622 Mb/s), BLVDS (Bus LVDS), LVPECL - Al I/O signals can be input, output, or bi-directional * * * * * * * * LVPECL and LVDS clock inputs for 300+ MHz clocks Proprietary High-Performance SelectLinkTM Technology - 80 Gb/s chip-to-chip communication link - Support for Double Data Rate (DDR) interface - Web-based HDL generation methodology Eight Fully Digital Delay-Locked Loops (DLLs) IEEE 1149.1 boundary-scan logic Supported by Xilinx Foundation SeriesTM and Alliance SeriesTM Development Systems - Internet Team Design (Xilinx iTDTM) tool ideal for million-plus gate density designs - Wide selection of PC or workstation platforms SRAM-based In-System Configuration - Unlimited re-programmability Advanced Packaging Options - 1.0 mm FG676 and FG900 - 1.27 mm BG560 0.18 m 6-layer Metal Process with Copper Interconnect 100% Factory Tested * ZBT is a trademark of Integrated Device Technology, Inc. Introduction The VirtexTM-E Extended Memory (Virtex-EM) family of FPGAs is an extension of the highly successful Virtex-E family architecture. The Virtex-EM family (devices shown in Table 1) includes all of the features of Virtex-E, plus additional block RAM, useful for applications such as network switches and high-performance video graphic systems. Xilinx developed the Virtex-EM product family to enable customers to design systems requiring high memory bandwidth, such as 160 Gb/s network switches. Unlike traditional ASIC devices, this family also supports fast time-to-market delivery, because the development engineering is already completed. Just complete the design and program the device. There is no NRE, no silicon production cycles, and no additional delays for design re-work. In addition, designers can update the design over a network at any time, providing product upgrades or updates to customers even sooner. ing customer applications by providing the highest level of logic, RAM, and features available in the industry. The Virtex-EM family, first FPGAs to deploy copper interconnect, offers the performance and high memory bandwidth for advanced system integration without the initial investment, long development cycles, and inventory risk expected in traditional ASIC development. The Virtex-EM family is the result of more than fifteen years of FPGA design experience. Xilinx has a history of support- (c) 2000-2002 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm. All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice. DS025-1 (v1.5) July 17, 2002 Production Product Specification www.xilinx.com 1-800-255-7778 Module 1 of 4 1 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 1: Virtex-E Extended Memory Field-Programmable Gate Array Family Members Device Logic Gates CLB Array Logic Cells Differential I/O Pairs User I/O BlockRAM Bits Distributed RAM Bits XCV405E 129,600 40 x 60 10,800 183 404 573,440 153,600 XCV812E 254,016 56 x 84 21,168 201 556 1,146,880 301,056 Virtex-E Compared to Virtex Devices The Virtex-E family offers up to 43,200 logic cells in devices up to 30% faster than the Virtex family. I/O performance is increased to 622 Mb/s using Source Synchronous data transmission architectures and synchronous system performance up to 240 MHz using singled-ended SelectI/O technology. Additional I/O standards are supported, notably LVPECL, LVDS, and BLVDS, which use two pins per signal. Almost all signal pins can be used for these new standards. Virtex-E devices have up to 640 Kb of faster (250MHz) block SelectRAM, but the individual RAMs are the same size and structure as in the Virtex family. They also have eight DLLs instead of the four in Virtex devices. Each individual DLL is slightly improved with easier clock mirroring and 4x frequency multiplication. VCCINT, the supply voltage for the internal logic and memory, is 1.8 V, instead of 2.5 V for Virtex devices. Advanced processing and 0.18 m design rules have resulted in smaller dice, faster speed, and lower power consumption. I/O pins are 3 V tolerant, and can be 5 V tolerant with an external 100 resistor. PCI 5 V is not supported. With the addition of appropriate external resistors, any pin can tolerate any voltage desired. Banking rules are different. With Virtex devices, all input buffers are powered by VCCINT. With Virtex-E devices, the LVTTL, LVCMOS2, and PCI input buffers are powered by the I/O supply voltage VCCO. The Virtex-E family is not bitstream-compatible with the Virtex family, but Virtex designs can be compiled into equivalent Virtex-E devices. The same device in the same package for the Virtex-E and Virtex families are pin-compatible with some minor exceptions. See the data sheet pinout section for details. General Description The Virtex-E FPGA family delivers high-performance, high-capacity programmable logic solutions. Dramatic increases in silicon efficiency result from optimizing the new architecture for place-and-route efficiency and exploiting an aggressive 6-layer metal 0.18 m CMOS process. These advances make Virtex-E FPGAs powerful and flexible alter- Module 1 of 4 2 natives to mask-programmed gate arrays. The Virtex-E family includes the nine members in Table 1. Building on experience gained from Virtex FPGAs, the Virtex-E family is an evolutionary step forward in programmable logic design. Combining a wide variety of programmable system features, a rich hierarchy of fast, flexible interconnect resources, and advanced process technology, the Virtex-E family delivers a high-speed and high-capacity programmable logic solution that enhances design flexibility while reducing time-to-market. Virtex-E Architecture Virtex-E devices feature a flexible, regular architecture that comprises an array of configurable logic blocks (CLBs) surrounded by programmable input/output blocks (IOBs), all interconnected by a rich hierarchy of fast, versatile routing resources. The abundance of routing resources permits the Virtex-E family to accommodate even the largest and most complex designs. Virtex-E FPGAs are SRAM-based, and are customized by loading configuration data into internal memory cells. Configuration data can be read from an external SPROM (master serial mode), or can be written into the FPGA (SelectMAPTM, slave serial, and JTAG modes). The standard Xilinx Foundation SeriesTM and Alliance SeriesTM Development systems deliver complete design support for Virtex-E, covering every aspect from behavioral and schematic entry, through simulation, automatic design translation and implementation, to the creation and downloading of a configuration bit stream. Higher Performance Virtex-E devices provide better performance than previous generations of FPGAs. Designs can achieve synchronous system clock rates up to 240 MHz including I/O or 622 Mb/s using Source Synchronous data transmission architechtures. Virtex-E I/Os comply fully with 3.3 V PCI specifications, and interfaces can be implemented that operate at 33 MHz or 66 MHz. While performance is design-dependent, many designs operate internally at speeds in excess of 133 MHz and can achieve over 311 MHz. Table 2, page 3, shows performance data for representative circuits, using worst-case timing parameters. www.xilinx.com 1-800-255-7778 DS025-1 (v1.5) July 17, 2002 Production Product Specification R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 2: Performance for Common Circuit Functions Function Bits Virtex-E -7 16 64 4.3 ns 6.3 ns 8x8 16 x 16 4.4 ns 5.1 ns 16 64 3.8 ns 5.5 ns Register-to-Register Adder Pipelined Multiplier Address Decoder 16:1 Multiplexer 4.6 ns 9 18 36 Parity Tree 3.5 ns 4.3 ns 5.9 ns Chip-to-Chip HSTL Class IV LVTTL,16mA, fast slew LVDS LVPECL Virtex-E Extended Memory Device/Package Combinations and Maximum I/O Table 3: Virtex-EM Family Maximum User I/O by Device/Package (Excluding Dedicated Clock Pins) Package XCV405E XCV812E BG560 404 404 FG676 404 FG900 556 Virtex-E Extended Memory Ordering Information Example: XCV405E-6BG560C Device Type Speed Grade (-6, -7, -8) Temperature Range C = Commercial (TJ = 0C to +85C) I = Industrial (TJ = -40C to +100C) Number of Pins Package Type BG = Ball Grid Array FG = Fine Pitch Ball Grid Array DS025_001_112000 Figure 1: Virtex Ordering Information DS025-1 (v1.5) July 17, 2002 Production Product Specification www.xilinx.com 1-800-255-7778 Module 1 of 4 3 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Revision History The following table shows the revision history for this document. Date Version 03/23/00 1.0 Initial Xilinx release. 08/01/00 1.1 Accumulated edits and fixes. Upgrade to Preliminary. Preview -8 numbers added. Reformatted to adhere to corporate documentation style guidelines. Minor changes in BG560 pin-out table. 09/19/00 1.2 * 1.3 * * 11/20/00 Revision * * * * 04/02/01 1.4 * * * 07/17/02 1.5 * In Table 3 (Module 4), FG676 Fine-Pitch BGA -- XCV405E, the following pins are no longer labeled as VREF: B7, G16, G26, W26, AF20, AF8, Y1, H1. Min values added to Virtex-E Electrical Characteristics tables. Updated speed grade -8 numbers in Virtex-E Electrical Characteristics tables (Module 3). Updated minimums in Table 11 (Module 2), and added notes to Table 12 (Module 2). Added to note 2 of Absolute Maximum Ratings (Module 3). Changed all minimum hold times to -0.4 for Global Clock Set-Up and Hold for LVTTL Standard, with DLL (Module 3). Revised maximum TDLLPW in -6 speed grade for DLL Timing Parameters (Module 3). In Table 4, FG676 Fine-Pitch BGA -- XCV405E, pin B19 is no longer labeled as VREF, and pin G16 is now labeled as VREF. Updated values in Virtex-E Switching Characteristics tables. Converted data sheet to modularized format. See Virtex-E Extended Memory Data Sheet, below. Data sheet designation upgraded from Preliminary to Production. Virtex-E Extended Memory Data Sheet The Virtex-E Extended Memory Data Sheet contains the following modules: * DS025-1, Virtex-E 1.8V Extended Memory FPGAs: * Introduction and Ordering Information (Module 1) * DS025-2, Virtex-E 1.8V Extended Memory FPGAs: Functional Description (Module 2) Module 1 of 4 4 DS025-3, Virtex-E 1.8V Extended Memory FPGAs: DC and Switching Characteristics (Module 3) * DS025-4, Virtex-E 1.8V Extended Memory FPGAs: Pinout Tables (Module 4) www.xilinx.com 1-800-255-7778 DS025-1 (v1.5) July 17, 2002 Production Product Specification 0 VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-2 (v2.3) November 19, 2002 0 0 Production Product Specification Architectural Description Virtex-E Array The Virtex-E user-programmable gate array (see Figure 1) comprises two major configurable elements: configurable logic blocks (CLBs) and input/output blocks (IOBs). * CLBs provide the functional elements for constructing logic. * IOBs provide the interface between the package pins and the CLBs. CLBs interconnect through a general routing matrix (GRM). The GRM comprises an array of routing switches located at the intersections of horizontal and vertical routing channels. Each CLB nests into a VersaBlockTM that also provides local routing resources to connect the CLB to the GRM. The VersaRingTM I/O interface provides additional routing resources around the periphery of the device. This routing improves I/O routability and facilitates pin locking. The Virtex-E architecture also includes the following circuits that connect to the GRM: * Dedicated block memories of 4096 bits each * Clock DLLs for clock-distribution delay compensation and clock domain control * 3-State buffers (BUFTs) associated with each CLB that drive dedicated segmentable horizontal routing resources Values stored in static memory cells control the configurable logic elements and interconnect resources. These values load into the memory cells on power-up, and can reload if necessary to change the function of the device. Input/Output Block The Virtex-E IOB, Figure 2, features SelectIO+TM inputs and outputs that support a wide variety of I/O signalling standards (see Table 1). T TCE D Q CE Weak Keeper SR O OCE PAD D Q CE OBUFT SR I IQ Q D CE Programmable Delay IBUF Vref SR SR CLK ICE ds022_02_091300 Figure 2: Virtex-E Input/Output Block (IOB) DLLDLL DLLDLL The three IOB storage elements function either as edge-triggered D-type flip-flops or as level-sensitive latches. Each IOB has a clock signal (CLK) shared by the three flip-flops and independent clock enable signals for each flip-flop. CLBs BRAMs BRAMs CLBs CLBs BRAMs CLBs BRAMs IOBs IOBs VersaRing VersaRing DLLDLL DLLDLL ds022_001_121099 Figure 1: Virtex-E Architecture Overview (c) 2000-2002 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm. All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice. DS025-2 (v2.3) November 19, 2002 www.xilinx.com 1-800-255-7778 Module 2 of 4 1 VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 1: R All Virtex-E IOBs support IEEE 1149.1-compatible boundary scan testing. Supported I/O Standards I/O Output Input Input Board Termination Voltage Standard VCCO VCCO VREF (VTT) LVTTL 3.3 3.3 N/A N/A LVCMOS2 2.5 2.5 N/A N/A LVCMOS18 1.8 1.8 N/A N/A SSTL3 I & II 3.3 N/A 1.50 1.50 SSTL2 I & II 2.5 N/A 1.25 1.25 GTL N/A N/A 0.80 1.20 GTL+ N/A N/A 1.0 1.50 HSTL I 1.5 N/A 0.75 0.75 HSTL III & IV 1.5 N/A 0.90 1.50 CTT 3.3 N/A 1.50 1.50 Output Path AGP-2X 3.3 N/A 1.32 N/A PCI33_3 3.3 3.3 N/A N/A PCI66_3 3.3 3.3 N/A N/A The output path includes a 3-state output buffer that drives the output signal onto the pad. The output signal can be routed to the buffer directly from the internal logic or through an optional IOB output flip-flop. BLVDS & LVDS 2.5 N/A N/A N/A LVPECL 3.3 N/A N/A N/A In addition to the CLK and CE control signals, the three flip-flops share a Set/Reset (SR). For each flip-flop, this signal can be independently configured as a synchronous Set, a synchronous Reset, an asynchronous Preset, or an asynchronous Clear. The output buffer and all of the IOB control signals have independent polarity controls. All pads are protected against damage from electrostatic discharge (ESD) and from over-voltage transients. After configuration, clamping diodes are connected to VCCO with the exception of LVCMOS18, LVCMOS25, GTL, GTL+, LVDS, and LVPECL. Optional pull-up, pull-down and weak-keeper circuits are attached to each pad. Prior to configuration all outputs not involved in configuration are forced into their high-impedance state. The pull-down resistors and the weak-keeper circuits are inactive, but IOs can optionally be pulled up. The activation of pull-up resistors prior to configuration is controlled on a global basis by the configuration mode pins. If the pull-up resistors are not activated, all the pins are in a high-impedance state. Consequently, external pull-up or pull-down resistors must be provided on pins required to be at a well-defined logic level prior to configuration. Module 2 of 4 2 Input Path The Virtex-E IOB input path routes the input signal directly to internal logic and/ or through an optional input flip-flop. An optional delay element at the D-input of this flip-flop eliminates pad-to-pad hold time. The delay is matched to the internal clock-distribution delay of the FPGA, and when used, assures that the pad-to-pad hold time is zero. Each input buffer can be configured to conform to any of the low-voltage signalling standards supported. In some of these standards the input buffer utilizes a user-supplied threshold voltage, VREF. The need to supply VREF imposes constraints on which standards can be used in close proximity to each other. See "I/O Banking" on page 2. There are optional pull-up and pull-down resistors at each user I/O input for use after configuration. Their value is in the range 50 - 100 k. The 3-state control of the output can also be routed directly from the internal logic or through a flip-flip that provides synchronous enable and disable. Each output driver can be individually programmed for a wide range of low-voltage signalling standards. Each output buffer can source up to 24 mA and sink up to 48 mA. Drive strength and slew rate controls minimize bus transients. In most signalling standards, the output High voltage depends on an externally supplied VCCO voltage. The need to supply VCCO imposes constraints on which standards can be used in close proximity to each other. See "I/O Banking" on page 2. An optional weak-keeper circuit is connected to each output. When selected, the circuit monitors the voltage on the pad and weakly drives the pin High or Low to match the input signal. If the pin is connected to a multiple-source signal, the weak keeper holds the signal in its last state if all drivers are disabled. Maintaining a valid logic level in this way eliminates bus chatter. Since the weak-keeper circuit uses the IOB input buffer to monitor the input level, an appropriate VREF voltage must be provided if the signalling standard requires one. The provision of this voltage must comply with the I/O banking rules. I/O Banking Some of the I/O standards described above require VCCO and/or VREF voltages. These voltages are externally supplied and connected to device pins that serve groups of www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays IOBs, called banks. Consequently, restrictions exist about which I/O standards can be combined within a given bank. Eight I/O banks result from separating each edge of the FPGA into two banks, as shown in Figure 3. Each bank has multiple VCCO pins, all of which must be connected to the same voltage. This voltage is determined by the output standards in use. Bank 2 Bank 1 GCLK3 GCLK2 Within a bank, inputs that require VREF can be mixed with those that do not. However, only one VREF voltage can be used within a bank. In Virtex-E, input buffers with LVTTL, LVCMOS2, LVCMOS18, PCI33_3, PCI66_3 standards are supplied by VCCO rather than VCCINT. For these standards, only input and output buffers that have the same VCCO can be mixed together. Bank 6 VirtexE Device GCLK1 GCLK0 Bank 5 Bank 4 The VCCO and VREF pins for each bank appear in the device pin-out tables and diagrams. The diagrams also show the bank affiliation of each I/O. ds022_03_121799 Figure 3: Virtex-E I/O Banks Within a bank, output standards can be mixed only if they use the same VCCO. Compatible standards are shown in Table 2. GTL and GTL+ appear under all voltages because their open-drain outputs do not depend on VCCO. Table 2: Compatible Output Standards VCCO Compatible Standards 3.3 V PCI, LVTTL, SSTL3 I, SSTL3 II, CTT, AGP, GTL, GTL+, LVPECL 2.5 V SSTL2 I, SSTL2 II, LVCMOS2, GTL, GTL+, BLVDS, LVDS 1.8 V LVCMOS18, GTL, GTL+ 1.5 V HSTL I, HSTL III, HSTL IV, GTL, GTL+ DS025-2 (v2.3) November 19, 2002 The VREF pins within a bank are interconnected internally and consequently only one VREF voltage can be used within each bank. All VREF pins in the bank, however, must be connected to the external voltage source for correct operation. Bank 3 Bank 7 Bank 0 Some input standards require a user-supplied threshold voltage, VREF. In this case, certain user-I/O pins are automatically configured as inputs for the VREF voltage. Approximately one in six of the I/O pins in the bank assume this role. Within a given package, the number of VREF and VCCO pins can vary depending on the size of device. In larger devices, more I/O pins convert to VREF pins. Since these are always a super set of the VREF pins used for smaller devices, it is possible to design a PCB that permits migration to a larger device if necessary. All the VREF pins for the largest device anticipated must be connected to the VREF voltage, and not used for I/O. In smaller devices, some VCCO pins used in larger devices do not connect within the package. These unconnected pins can be left unconnected externally, or they can be connected to the VCCO voltage to permit migration to a larger device, if necessary. Configurable Logic Block The basic building block of the Virtex-E CLB is the logic cell (LC). An LC includes a 4-input function generator, carry logic, and a storage element. The output from the function generator in each LC drives both the CLB output and the D input of the flip-flop. Each Virtex-E CLB contains four LCs, organized in two similar slices, as shown in Figure 4. Figure 5 shows a more detailed view of a single slice. www.xilinx.com 1-800-255-7778 Module 2 of 4 3 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays COUT COUT YB Y G4 G3 G2 LUT SP D Q CE Carry & Control YB Y G4 G3 YQ G1 LUT G2 SP D Q CE Carry & Control YQ G1 RC BY RC BY XB F3 XB X F4 LUT F2 SP D Q CE Carry & Control F1 F3 XQ LUT F2 SP D Q CE Carry & Control XQ F1 RC BX X F4 RC BX Slice 1 Slice 0 CIN CIN ds022_04_121799 Figure 4: 2-Slice Virtex-E CLB COUT YB CY G4 G3 G2 G1 I3 I2 I1 I0 Y O LUT DI WE 0 INIT D Q CE 1 REV YQ BY XB F5IN F6 CY CK WE A4 WSH BX X DI INIT DQ CE BX F4 F3 F2 F1 I3 I2 I1 I0 F5 F5 BY DG WSO WE XQ DI REV O LUT 0 1 SR CLK CE CIN ds022_05_092000 Figure 5: Detailed View of Virtex-E Slice In addition to the four basic LCs, the Virtex-E CLB contains logic that combines function generators to provide functions of five or six inputs. Consequently, when estimating the number of system gates provided by a given device, each CLB counts as 4.5 LCs. Module 2 of 4 4 Look-Up Tables Virtex-E function generators are implemented as 4-input look-up tables (LUTs). In addition to operating as a function generator, each LUT can provide a 16 x 1-bit synchronous RAM. Furthermore, the two LUTs within a slice can be com- www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays bined to create a 16 x 2-bit or 32 x 1-bit synchronous RAM, or a 16 x 1-bit dual-port synchronous RAM. The Virtex-E LUT can also provide a 16-bit shift register that is ideal for capturing high-speed or burst-mode data. This mode can also be used to store data in applications such as Digital Signal Processing. Storage Elements The storage elements in the Virtex-E slice can be configured either as edge-triggered D-type flip-flops or as level-sensitive latches. The D inputs can be driven either by the function generators within the slice or directly from slice inputs, bypassing the function generators. In addition to Clock and Clock Enable signals, each Slice has synchronous set and reset signals (SR and BY). SR forces a storage element into the initialization state specified for it in the configuration. BY forces it into the opposite state. Alternatively, these signals can be configured to operate asynchronously. All of the control signals are independently invertible, and are shared by the two flip-flops within the slice. Additional Logic The F5 multiplexer in each slice combines the function generator outputs. This combination provides either a function generator that can implement any 5-input function, a 4:1 multiplexer, or selected functions of up to nine inputs. Similarly, the F6 multiplexer combines the outputs of all four function generators in the CLB by selecting one of the F5-multiplexer outputs. This permits the implementation of any 6-input function, an 8:1 multiplexer, or selected functions of up to 19 inputs. Arithmetic Logic Dedicated carry logic provides fast arithmetic carry capability for high-speed arithmetic functions. The Virtex-E CLB supports two separate carry chains, one per Slice. The height of the carry chains is two bits per CLB. The arithmetic logic includes an XOR gate that allows a 2-bit full adder to be implemented within a slice. In addition, a dedicated AND gate improves the efficiency of multiplier implementation. The dedicated carry path can also be used to cascade function generators for implementing wide logic functions. BUFTs Each Virtex-E CLB contains two 3-state drivers (BUFTs) that can drive on-chip busses. See "Dedicated Routing" on page 7. Each Virtex-E BUFT has an independent 3-state control pin and an independent input pin. Block SelectRAM+ Memory Virtex-E FPGAs incorporate large block SelectRAM memories. These complement the Distributed SelectRAM memories that provide shallow RAM structures implemented in CLBs. Block SelectRAM memory blocks are organized in columns, starting at the left (column 0) and right outside edges and inserted every four CLB columns (see notes for smaller devices). Each memory block is four CLBs high, and each memory column extends the full height of the chip, immediately adjacent (to the right, except for column 0) of the CLB column locations indicated in Table 3. Each CLB has four direct feedthrough paths, two per slice. These paths provide extra data input lines or additional local routing that does not consume logic resources. Table 3: CLB/Block RAM Column Locations Virtex-E Device 0 4 8 12 16 20 24 XCV405E XCV812E 28 32 Table 4 shows the amount of block SelectRAM memory that is available in each Virtex-E device. Table 4: Virtex-E Block SelectRAM Amounts Virtex-E Device # of Blocks Block SelectRAM Bits XCV405E 140 573,440 XCV812E 280 1,146,880 DS025-2 (v2.3) November 19, 2002 36 40 44 48 52 56 60 64 68 72 76 80 84 Each block SelectRAM cell, as illustrated in Figure 6, is a fully synchronous dual-ported (True Dual Port) 4096-bit RAM with independent control signals for each port. The data widths of the two ports can be configured independently, providing built-in bus-width conversion. www.xilinx.com 1-800-255-7778 Module 2 of 4 5 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays delay of the GRM . RAMB4_S#_S# WEA ENA RSTA CLKA ADDRA[#:0] DIA[#:0] WEB ENB RSTB CLKB ADDRB[#:0] DIB[#:0] To Adjacent GRM DOA[#:0] To Adjacent GRM GRM To Adjacent GRM To Adjacent GRM DOB[#:0] Direct Connection To Adjacent CLB CLB Direct Connection To Adjacent CLB XCVE_ds_007 ds022_06_121699 Figure 7: Virtex-E Local Routing Figure 6: Dual-Port Block SelectRAM Table 5 shows the depth and width aspect ratios for the block SelectRAM. The Virtex-E block SelectRAM also includes dedicated routing to provide an efficient interface with both CLBs and other block SelectRAM modules. Refer to XAPP130 for block SelectRAM timing waveforms. Table 5: Block SelectRAM Port Aspect Ratios Width Depth ADDR Bus Data Bus 1 4096 ADDR<11:0> DATA<0> 2 2048 ADDR<10:0> DATA<1:0> 4 1024 ADDR<9:0> DATA<3:0> 8 512 ADDR<8:0> DATA<7:0> 16 256 ADDR<7:0> DATA<15:0> General Purpose Routing Most Virtex-E signals are routed on the general purpose routing, and consequently, the majority of interconnect resources are associated with this level of the routing hierarchy. The general routing resources are located in horizontal and vertical routing channels associated with the CLB rows and columns. The general-purpose routing resources are listed below. * Adjacent to each CLB is a General Routing Matrix (GRM). The GRM is the switch matrix through which horizontal and vertical routing resources connect, and is also the means by which the CLB gains access to the general purpose routing. * 24 single-length lines route GRM signals to adjacent GRMs in each of the four directions. * 72 buffered Hex lines route GRM signals to another GRMs six-blocks away in each one of the four directions. Organized in a staggered pattern, Hex lines are driven only at their endpoints. Hex-line signals can be accessed either at the endpoints or at the midpoint (three blocks from the source). One third of the Hex lines are bidirectional, while the remaining ones are uni-directional. * 12 Longlines are buffered, bidirectional wires that distribute signals across the device quickly and efficiently. Vertical Longlines span the full height of the device, and horizontal ones span the full width of the device. Programmable Routing Matrix It is the longest delay path that limits the speed of any worst-case design. Consequently, the Virtex-E routing architecture and its place-and-route software were defined in a joint optimization process. This joint optimization minimizes long-path delays, and consequently, yields the best system performance. The joint optimization also reduces design compilation times because the architecture is software-friendly. Design cycles are correspondingly reduced due to shorter design iteration times. Local Routing I/O Routing The VersaBlock, shown in Figure 7, provides local routing resources with the following types of connections: Virtex-E devices have additional routing resources around their periphery that form an interface between the CLB array and the IOBs. This additional routing, called the VersaRing, facilitates pin-swapping and pin-locking, such that logic redesigns can adapt to existing PCB layouts. Time-to-market is reduced, since PCBs and other system components can be manufactured while the logic design is still in progress. * * * Interconnections among the LUTs, flip-flops, and GRM Internal CLB feedback paths that provide high-speed connections to LUTs within the same CLB, chaining them together with minimal routing delay Direct paths that provide high-speed connections between horizontally adjacent CLBs, eliminating the Module 2 of 4 6 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Dedicated Routing Some signal classes require dedicated routing resources to maximize performance. In the Virtex-E architecture, dedicated routing resources are provided for two signal classes. * Horizontal routing resources are provided for on-chip 3-state busses. Four partitionable bus lines are provided per CLB row, permitting multiple busses within a row, as shown in Figure 8. * Two dedicated nets per CLB propagate carry signals vertically to the adjacent CLB. Global Clock Distribution Network. * DLL Location Tri-State Lines CLB CLB CLB CLB buft_c.eps Figure 8: BUFT Connections to Dedicated Horizontal Bus LInes Clock Routing Clock Routing resources distribute clocks and other signals with very high fanout throughout the device. Virtex-E devices include two tiers of clock routing resources referred to as global and local clock routing resources. * The global routing resources are four dedicated global nets with dedicated input pins that are designed to distribute high-fanout clock signals with minimal skew. Each global clock net can drive all CLB, IOB, and block RAM clock pins. The global nets can be driven only by global buffers. There are four global buffers, one for each global net. * The local clock routing resources consist of 24 backbone lines, 12 across the top of the chip and 12 across bottom. From these lines, up to 12 unique signals per column can be distributed via the 12 longlines in the column. These local resources are more flexible than the global resources since they are not restricted to routing only to clock pins. Global Clock Distribution Virtex-E provides high-speed, low-skew clock distribution through the global routing resources described above. A typical clock distribution net is shown in Figure 9. GCLKPAD3 GCLKPAD2 GCLKBUF3 GCLKBUF2 Global Clock Column Global Clock Rows Four global buffers are provided, two at the top center of the device and two at the bottom center. These drive the four global nets that in turn drive any clock pin. Four dedicated clock pads are provided, one adjacent to each of the global buffers. The input to the global buffer is selected either from these pads or from signals in the general purpose routing. Digital Delay-Locked Loops Global Clock Spine GCLKBUF1 GCLKBUF0 GCLKPAD1 GCLKPAD0 XCVE_009 Figure 9: Global Clock Distribution Network DS025-2 (v2.3) November 19, 2002 There are eight DLLs (Delay-Locked Loops) per device, with four located at the top and four at the bottom, Figure 10. The DLLs can be used to eliminate skew between the clock input pad and the internal clock input pins throughout the device. Each DLL can drive two global clock networks.The DLL monitors the input clock and the distributed clock, and automatically adjusts a clock delay element. Additional delay is introduced such that clock edges arrive at internal flip-flops synchronized with clock edges arriving at the input. In addition to eliminating clock-distribution delay, the DLL provides advanced control of multiple clock domains. The www.xilinx.com 1-800-255-7778 Module 2 of 4 7 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays DLL provides four quadrature phases of the source clock, and can double the clock or divide the clock by 1.5, 2, 2.5, 3, 4, 5, 8, or 16. DLLDLL Secondary DLLs In order to guarantee that the system clock is operating correctly prior to the FPGA starting up after configuration, the DLL can delay the completion of the configuration process until after it has achieved lock. Primary DLLs Secondary DLLs The DLL also operates as a clock mirror. By driving the output from a DLL off-chip and then back on again, the DLL can be used to de-skew a board level clock among multiple devices. DLLDLL For more information about DLL functionality, see the Design Consideration section of the data sheet. DLLDLL DLLDLL XCVE_0010 Figure 10: DLL Locations Boundary Scan Virtex-E devices support all the mandatory boundary-scan instructions specified in the IEEE standard 1149.1. A Test Access Port (TAP) and registers are provided that implement the EXTEST, INTEST, SAMPLE/PRELOAD, BYPASS, IDCODE, USERCODE, and HIGHZ instructions. The TAP also supports two internal scan chains and configuration/readback of the device. the testing of external interconnections, provided the user design or application is turned off. The JTAG input pins (TDI, TMS, TCK) do not have a VCCO requirement, and operate with either 2.5 V or 3.3 V input signalling levels. The output pin (TDO) is sourced from the VCCO in bank 2, and for proper operation of LVTTL 3.3 V levels, the bank should be supplied with 3.3 V. Before the device is configured, all instructions except USER1 and USER2 are available. After configuration, all instructions are available. During configuration, it is recommended that those operations using the boundary-scan register (SAMPLE/PRELOAD, INTEST, EXTEST) not be performed. Boundary-scan operation is independent of individual IOB configurations, and unaffected by package type. All IOBs, including un-bonded ones, are treated as independent 3-state bidirectional pins in a single scan chain. Retention of the bidirectional test capability after configuration facilitates Module 2 of 4 8 Table 6 lists the boundary-scan instructions supported in Virtex-E FPGAs. Internal signals can be captured during EXTEST by connecting them to un-bonded or unused IOBs. They can also be connected to the unused outputs of IOBs defined as unidirectional input pins. In addition to the test instructions outlined above, the boundary-scan circuitry can be used to configure the FPGA, and also to read back the configuration data. www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Figure 11 is a diagram of the Virtex-E Series boundary scan logic. It includes three bits of Data Register per IOB, the IEEE 1149.1 Test Access Port controller, and the Instruction Register with decodes. DATA IN IOB.T 0 1 0 IOB IOB IOB IOB sd D D Q Q 1 LE IOB IOB IOB IOB IOB IOB IOB IOB IOB 1 sd D Q D Q 0 LE 1 IOB.I 0 1 IOB IOB IOB IOB IOB BYPASS REGISTER 0 sd D Q D Q LE 1 0 IOB.Q IOB IOB.T TDI INSTRUCTION REGISTER 0 M TDO U X 1 0 sd D Q D Q 1 LE 1 0 sd D Q D Q LE 1 IOB.I 0 DATAOUT SHIFT/ CLOCK DATA CAPTURE REGISTER UPDATE EXTEST X9016 Figure 11: Virtex-E Family Boundary Scan Logic DS025-2 (v2.3) November 19, 2002 www.xilinx.com 1-800-255-7778 Module 2 of 4 9 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 6: Each EXTEST CAPTURED-OR state captures all In, Out, and 3-state pins. Boundary Scan Instructions Boundary-Scan Command Binary Code (4:0) EXTEST 00000 Enable boundary-scan EXTEST operation. SAMPLE/ PRELOAD 00001 Enable boundary-scan SAMPLE/PRELOAD operation. USER1 00010 Access user-defined register 1. USER2 00011 Access user-defined register 2. Description CFG_OUT 00100 Access the configuration bus for read operations. CFG_IN 00101 Access the configuration bus for write operations. INTEST 00111 Enable boundary-scan INTEST operation. USERCODE 01000 Enable shifting out USER code. IDCODE 01001 Enable shifting out of ID Code. HIGHZ 01010 3-state output pins while enabling the Bypass Register. JSTART 01100 Clock the start-up sequence when StartupClk is TCK. BYPASS 11111 RESERVED All other codes The other standard data register is the single flip-flop BYPASS register. It synchronizes data being passed through the FPGA to the next downstream boundary scan device. The FPGA supports up to two additional internal scan chains that can be specified using the BSCAN macro. The macro provides two user pins (SEL1 and SEL2) which are decodes of the USER1 and USER2 instructions respectively. For these instructions, two corresponding pins (T DO1 and TDO2) allow user scan data to be shifted out of TDO. Likewise, there are individual clock pins (DRCK1 and DRCK2) for each user register. There is a common input pin (TDI) and shared output pins that represent the state of the TAP controller (RESET, SHIFT, and UPDATE). Bit Sequence The order within each IOB is: In, Out, 3-State. The input-only pins contribute only the In bit to the boundary scan I/O data register, while the output-only pins contributes all three bits. From a cavity-up view of the chip (as shown in EPIC), starting in the upper right chip corner, the boundary scan data-register bits are ordered as shown in Figure 12. BSDL (Boundary Scan Description Language) files for Virtex-E Series devices are available on the Xilinx web site in the File Download area. Bit 0 ( TDO end) Bit 1 Bit 2 GCLK2 GCLK3 Left half of top-edge IOBs (Right to Left) Left-edge IOBs (Top to Bottom) Enable BYPASS. M1 M0 M2 Xilinx reserved instructions. Left half of bottom-edge IOBs (Left to Right) GCLK1 GCLK0 Instruction Set Right half of bottom-edge IOBs (Left to Right) The Virtex-E Series boundary scan instruction set also includes instructions to configure the device and read back configuration data (CFG_IN, CFG_OUT, and JSTART). The complete instruction set is coded as shown in Table 6. DONE PROG Right-edge IOBs (Bottom to Top) (TDI end) Data Registers CCLK 990602001 The primary data register is the boundary scan register. For each IOB pin in the FPGA, bonded or not, it includes three bits for In, Out, and 3-State Control. Non-IOB pins have appropriate partial bit population if input-only or output-only. Module 2 of 4 10 Right half of top-edge IOBs (Right to Left) www.xilinx.com 1-800-255-7778 Figure 12: Boundary Scan Bit Sequence DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Identification Registers Table 7: The IDCODE register is supported. By using the IDCODE, the device connected to the JTAG port can be determined. The IDCODE register has the following binary format: vvvv:ffff:fffa:aaaa:aaaa:cccc:cccc:ccc1 where v = the die version number f = the family code (05 for Virtex-E family) a = the number of CLB rows (ranges from 16 for XCV50E to 104 for XCV3200E) c = the company code (49h for Xilinx) The USERCODE register is supported. By using the USERCODE, a user-programmable identification code can be loaded and shifted out for examination. The identification code (see Table 7) is embedded in the bitstream during bitstream generation and is valid only after configuration. IDCODEs Assigned to Virtex-E FPGAs FPGA IDCODE XCV405EM v0C28093h XCV812EM v0C38093h Note: Attempting to load an incorrect bitstream causes configuration to fail and can damage the device. Including Boundary Scan in a Design Since the boundary scan pins are dedicated, no special element needs to be added to the design unless an internal data register (USER1 or USER2) is desired. If an internal data register is used, insert the boundary scan symbol and connect the necessary pins as appropriate. Development System Virtex-E FPGAs are supported by the Xilinx Foundation and Alliance Series CAE tools. The basic methodology for Virtex-E design consists of three interrelated steps: design entry, implementation, and verification. Industry-standard tools are used for design entry and simulation (for example, Synopsys FPGA Express), while Xilinx provides proprietary architecture-specific tools for implementation. The Xilinx development system is integrated under the Xilinx Design Manager (XDMTM) software, providing designers with a common user interface regardless of their choice of entry and verification tools. The XDM software simplifies the selection of implementation options with pull-down menus and on-line help. Application programs ranging from schematic capture to Placement and Routing (PAR) can be accessed through the XDM software. The program command sequence is generated prior to execution, and stored for documentation. Several advanced software features facilitate Virtex-E design. RPMs, for example, are schematic-based macros with relative location constraints to guide their placement. They help ensure optimal implementation of common functions. For HDL design entry, the Xilinx FPGA Foundation development system provides interfaces to the following synthesis design environments. * Synopsys (FPGA Compiler, FPGA Express) * Exemplar (Spectrum) * Synplicity (Synplify) For schematic design entry, the Xilinx FPGA Foundation and Alliance development system provides interfaces to the following schematic-capture design environments. * Mentor Graphics V8 (Design Architect, QuickSim II) * Viewlogic Systems (Viewdraw) Third-party vendors support many other environments. DS025-2 (v2.3) November 19, 2002 A standard interface-file specification, Electronic Design Interchange Format (EDIF), simplifies file transfers into and out of the development system. Virtex-E FPGAs are supported by a unified library of standard functions. This library contains over 400 primitives and macros, ranging from 2-input AND gates to 16-bit accumulators, and includes arithmetic functions, comparators, counters, data registers, decoders, encoders, I/O functions, latches, Boolean functions, multiplexers, shift registers, and barrel shifters. The "soft macro" portion of the library contains detailed descriptions of common logic functions, but does not contain any partitioning or placement information. The performance of these macros depends, therefore, on the partitioning and placement obtained during implementation. RPMs, on the other hand, do contain predetermined partitioning and placement information that permits optimal implementation of these functions. Users can create their own library of soft macros or RPMs based on the macros and primitives in the standard library. The design environment supports hierarchical design entry, with high-level schematics that comprise major functional blocks, while lower-level schematics define the logic in these blocks. These hierarchical design elements are automatically combined by the implementation tools. Different design entry tools can be combined within a hierarchical design, thus allowing the most convenient entry method to be used for each portion of the design. Design Implementation The place-and-route tools (PAR) automatically provide the implementation flow described in this section. The partitioner takes the EDIF net list for the design and maps the logic into the architectural resources of the FPGA (CLBs and IOBs, for example). The placer then determines the best locations for these blocks based on their interconnec- www.xilinx.com 1-800-255-7778 Module 2 of 4 11 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays tions and the desired performance. Finally, the router interconnects the blocks. The PAR algorithms support fully automatic implementation of most designs. For demanding applications, however, the user can exercise various degrees of control over the process. User partitioning, placement, and routing information is optionally specified during the design-entry process. The implementation of highly structured designs can benefit greatly from basic floor planning. The implementation software incorporates Timing Wizard(R) timing-driven placement and routing. Designers specify timing requirements along entire paths during design entry. The timing path analysis routines in PAR then recognize these user-specified requirements and accommodate them. Timing requirements are entered on a schematic in a form directly relating to the system requirements, such as the targeted clock frequency, or the maximum allowable delay between two registers. In this way, the overall performance of the system along entire signal paths is automatically tailored to user-generated specifications. Specific timing information for individual nets is unnecessary. Design Verification In addition to conventional software simulation, FPGA users can use in-circuit debugging techniques. Because Xilinx devices are infinitely reprogrammable, designs can be verified in real time without the need for extensive sets of software simulation vectors. The development system supports both software simulation and in-circuit debugging techniques. For simulation, the system extracts the post-layout timing information from the design database, and back-annotates this information into the net list for use by the simulator. Alternatively, the user can verify timing-critical portions of the design using the TRCE(R) static timing analyzer. For in-circuit debugging, an optional download and readback cable is available. This cable connects the FPGA in the target system to a PC or workstation. After downloading the design into the FPGA, the designer can single-step the logic, readback the contents of the flip-flops, and so observe the internal logic state. Simple modifications can be downloaded into the system in a matter of minutes. Configuration Virtex-E devices are configured by loading configuration data into the internal configuration memory. Note that attempting to load an incorrect bitstream causes configuration to fail and can damage the device. Some of the pins used for configuration are dedicated pins, while others can be re-used as general purpose inputs and outputs once configuration is complete. The following are dedicated pins: * Mode pins (M2, M1, M0) * Configuration clock pin (CCLK) * PROGRAM pin * DONE pin * Boundary-scan pins (TDI, TDO, TMS, TCK) Depending on the configuration mode chosen, CCLK can be an output generated by the FPGA, or it can be generated externally and provided to the FPGA as an input. The PROGRAM pin must be pulled High prior to reconfiguration. Note that some configuration pins can act as outputs. For correct operation, these pins require a VCCO of 3.3 V to permit LVTTL operation. All of the pins affected are in banks 2 Table 8: or 3. The configuration pins needed for SelectMap (CS, Write) are located in bank 1. Configuration Modes Virtex-E supports the following four configuration modes. * Slave-serial mode * Master-serial mode * SelectMAP mode * Boundary-scan mode (JTAG) The Configuration mode pins (M2, M1, M0) select among these configuration modes with the option in each case of having the IOB pins either pulled up or left floating prior to configuration. The selection codes are listed in Table 8. Configuration through the boundary-scan port is always available, independent of the mode selection. Selecting the boundary-scan mode simply turns off the other modes. The three mode pins have internal pull-up resistors, and default to a logic High if left unconnected. However, it is recommended to drive the configuration mode pins externally. Configuration Codes Configuration Mode M2 M1 M0 CCLK Direction Data Width Serial Dout Configuration Pull-ups Master-serial mode 0 0 0 Out 1 Yes No Boundary-scan mode 1 0 1 N/A 1 No No SelectMAP mode 1 1 0 In 8 No No Slave-serial mode 1 1 1 In 1 Yes No Master-serial mode 1 0 0 Out 1 Yes Yes Module 2 of 4 12 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R Table 8: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Configuration Codes Configuration Mode M2 M1 M0 CCLK Direction Data Width Serial Dout Configuration Pull-ups Boundary-scan mode 0 0 1 N/A 1 No Yes SelectMAP mode 0 1 0 In 8 No Yes Slave-serial mode 0 1 1 In 1 Yes Yes Table 9 lists the total number of bits required to configure each device. ured, the data for the next device is routed to the DOUT pin. Data on the DOUT pin changes on the rising edge of CCLK. Table 9: The change of DOUT on the rising edge of CCLK differs from previous families but does not cause a problem for mixed configuration chains. This change was made to improve serial configuration rates for Virtex and Virtex-E only chains. Virtex-E Bitstream Lengths Device # of Configuration Bits XCV405E 3,430,400 XCV812E 6,519,648 Figure 13 shows a full master/slave system. A Virtex-E device in slave-serial mode should be connected as shown in the right-most device. Slave-Serial Mode In slave-serial mode, the FPGA receives configuration data in bit-serial form from a serial PROM or other source of serial configuration data. The serial bitstream must be set up at the DIN input pin a short time before each rising edge of an externally generated CCLK. For more detailed information on serial PROMs see the PROM data sheet at http://www.xilinx.com/bvdocs/publications/ds026.pdf. Multiple FPGAs can be daisy-chained for configuration from a single source. After a particular FPGA has been configTable 10: Slave-serial mode is selected by applying <111> or <011> to the mode pins (M2, M1, M0). A weak pull-up on the mode pins makes slave-serial the default mode if the pins are left unconnected. However, it is recommended to drive the configuration mode pins externally. Figure 14 shows slave-serial mode programming switching characteristics. Table 10 provides more detail about the characteristics shown in Figure 14. Configuration must be delayed until the INIT pins of all daisy-chained FPGAs are High. Master/Slave Serial Mode Programming Switching Figure References Symbol Values Units DIN setup/hold, slave mode 1/2 TDCC/TCCD 5.0/0.0 ns, min DIN setup/hold, master mode 1/2 TDSCK/TCKDS 5.0/0.0 ns, min DOUT 3 TCCO 12.0 ns, max High time 4 TCCH 5.0 ns, min Low time 5 TCCL 5.0 ns, min FCC 66 MHz, max Description CCLK Maximum Frequency Frequency Tolerance, master mode with respect to nominal DS025-2 (v2.3) November 19, 2002 www.xilinx.com 1-800-255-7778 +45% -30% Module 2 of 4 13 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays N/C 3.3V 4.7 K M0 M1 M2 N/C DOUT M0 M1 M2 DIN DOUT CCLK VIRTEX-E MASTER SERIAL XC1701L CCLK DIN CLK DATA CEO CE RESET/OE PROGRAM DONE INIT VIRTEX-E, XC4000XL, SLAVE PROGRAM DONE INIT (Low Reset Option Used) PROGRAM XCVE_ds_013 Figure 13: Master/Slave Serial Mode Circuit Diagram DIN 1 TDCC 2 TCCD 5 TCCL CCLK 4 TCCH 3 TCCO DOUT (Output) X5379_a Figure 14: Slave-Serial Mode Programming Switching Characteristics Master-Serial Mode In master-serial mode, the CCLK output of the FPGA drives a Xilinx Serial PROM that feeds bit-serial data to the DIN input. The FPGA accepts this data on each rising CCLK edge. After the FPGA has been loaded, the data for the next device in a daisy-chain is presented on the DOUT pin after the rising CCLK edge. The interface is identical to slave-serial except that an internal oscillator is used to generate the configuration clock (CCLK). A wide range of frequencies can be selected for CCLK which always starts at a slow default frequency. Configuration bits then switch CCLK to a higher frequency for the remainder of the configuration. Switching to a lower frequency is prohibited. The CCLK frequency is set using the ConfigRate option in the bitstream generation software. The maximum CCLK fre- Module 2 of 4 14 quency that can be selected is 60 MHz. When selecting a CCLK frequency, ensure that the serial PROM and any daisy-chained FPGAs are fast enough to support the clock rate. On power-up, the CCLK frequency is approximately 2.5 MHz. This frequency is used until the ConfigRate bits have been loaded when the frequency changes to the selected ConfigRate. Unless a different frequency is specified in the design, the default ConfigRate is 4 MHz. Figure 13 shows a full master/slave system. In this system, the left-most device operates in master-serial mode. The remaining devices operate in slave-serial mode. The SPROM RESET pin is driven by INIT, and the CE input is driven by DONE. There is the potential for contention on the DONE pin, depending on the start-up sequence options chosen. www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays The sequence of operations necessary to configure a Virtex-E FPGA serially appears in Figure 15. Apply Power Figure 16 shows the timing of master-serial configuration. Master-serial mode is selected by a <000> or <100> on the mode pins (M2, M1, M0). Table 10 shows the timing information for Figure 16 . FPGA starts to clear configuration memory. Set PROGRAM = High FPGA makes a final clearing pass and releases INIT when finished. If used to delay configuration Release INIT INIT? Low High Load a Configuration Bit Once per bitstream, FPGA checks data using CRC and pulls INIT Low on error. If no CRC errors found, FPGA enters start-up phase causing DONE to go High. End of Bitstream? No Yes Configuration Completed ds009_15_111799 Figure 15: Serial Configuration Flowchart CCLK (Output) TCKDS 2 1 TDSCK Serial Data In Serial DOUT (Output) DS022_44_071201 Figure 16: Master-Serial Mode Programming Switching Characteristics At power-up, VCC must rise from 1.0 V to VCC min in less than 50 ms, otherwise delay configuration by pulling PROGRAM Low until VCC is valid. SelectMAP Mode The SelectMAP mode is the fastest configuration option. Byte-wide data is written into the FPGA with a BUSY flag controlling the flow of data. An external data source provides a byte stream, CCLK, a Chip Select (CS) signal and a Write signal (WRITE). If BUSY is asserted (High) by the FPGA, the data must be held until BUSY goes Low. Data can also be read using the SelectMAP mode. If WRITE is not asserted, configuration data is read out of the FPGA as part of a readback operation. After configuration, the pins of the SelectMAP port can be used as additional user I/O. Alternatively, the port can be retained to permit high-speed 8-bit readback. Retention of the SelectMAP port is selectable on a design-by-design basis when the bitstream is generated. If DS025-2 (v2.3) November 19, 2002 retention is selected, PROHIBIT constraints are required to prevent SelectMAP-port pins from being used as user I/O. Multiple Virtex-E FPGAs can be configured using the SelectMAP mode, and be made to start-up simultaneously. To configure multiple devices in this way, wire the individual CCLK, Data, WRITE, and BUSY pins of all the devices in parallel. The individual devices are loaded separately by asserting the CS pin of each device in turn and writing the appropriate data. See Table 11 for SelectMAP Write Timing Characteristics. Write Write operations send packets of configuration data into the FPGA. The sequence of operations for a multi-cycle write operation is shown below. Note that a configuration packet can be split into many such sequences. The packet does not have to complete within one assertion of CS, illustrated in Figure 17. 1. Assert WRITE and CS Low. Note that when CS is asserted on successive CCLKs, WRITE must remain www.xilinx.com 1-800-255-7778 Module 2 of 4 15 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays either asserted or de-asserted. Otherwise an abort is initiated, as described below. 2. Drive data onto D[7:0]. Note that to avoid contention, the data source should not be enabled while CS is Low and WRITE is High. Similarly, while WRITE is High, no more that one CS should be asserted. Table 11: 3. At the rising edge of CCLK: If BUSY is Low, the data is accepted on this clock. If BUSY is High (from a previous write), the data is not accepted. Acceptance instead occurs on the first clock after BUSY goes Low, and the data must be held until this has happened. 4. Repeat steps 2 and 3 until all the data has been sent. 5. De-assert CS and WRITE. SelectMAP Write Timing Characteristics Description Symbol Values Units D0-7 Setup/Hold 1/2 TSMDCC/TSMCCD 5.0 / 1.7 ns, min CS Setup/Hold 3/4 TSMCSCC/TSMCCCS 7.0 / 1.7 ns, min WRITE Setup/Hold 5/6 TSMCCW/TSMWCC 7.0 / 1.7 ns, min 7 TSMCKBY 12.0 ns, max FCC 66 MHz, max FCCNH 50 MHz, max CCLK BUSY Propagation Delay Maximum Frequency Maximum Frequency with no handshake CCLK CS WRITE 3 4 5 6 1 2 DATA[0:7] 7 BUSY No Write Write No Write Write DS022_45_071702 Figure 17: Write Operations A flowchart for the write operation appears in Figure 18. Note that if CCLK is slower than fCCNH, the FPGA never asserts BUSY, In this case, the above handshake is unnecessary, and data can simply be entered into the FPGA every CCLK cycle. rent packet command to be aborted. The device remains BUSY until the aborted operation has completed. Following an abort, data is assumed to be unaligned to word boundaries, and the FPGA requires a new synchronization word prior to accepting any new packets. Abort To initiate an abort during a write operation, de-assert WRITE. At the rising edge of CCLK, an abort is initiated, as shown in Figure 19. During a given assertion of CS, the user cannot switch from a write to a read, or vice-versa. This action causes the cur- Module 2 of 4 16 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Apply Power FPGA starts to clear configuration memory. PROGRAM from Low to High FPGA makes a final clearing pass and releases INIT when finished. No Yes If used to delay configuration Release INIT INIT? Low High Set WRITE = Low Enter Data Source Sequence A On first FPGA Set CS = Low Apply Configuration Byte Once per bitstream, FPGA checks data using CRC and pulls INIT Low on error. Busy? High Low End of Data? If no errors, first FPGAs enter start-up phase releasing DONE. If no errors, later FPGAs enter start-up phase releasing DONE. No Yes Set CS = High Repeat Sequence A On first FPGA For any other FPGAs Disable Data Source Set WRITE = High When all DONE pins are released, DONE goes High and start-up sequences complete. Configuration Completed ds003_17_090602 Figure 18: SelectMAP Flowchart for Write Operations CCLK CS WRITE DATA[0:7] BUSY Abort DS022_46_071702 Figure 19: SelectMAP Write Abort Waveforms Boundary-Scan Mode In the boundary-scan mode, configuration is done through the IEEE 1149.1 Test Access Port. Note that the DS025-2 (v2.3) November 19, 2002 PROGRAM pin must be pulled High prior to reconfiguration. A Low on the PROGRAM pin resets the TAP controller and no JTAG operations can be performed. www.xilinx.com 1-800-255-7778 Module 2 of 4 17 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Configuration through the TAP uses the CFG_IN instruction. This instruction allows data input on TDI to be converted into data packets for the internal configuration bus. The following steps are required to configure the FPGA through the boundary-scan port (when using TCK as a start-up clock). 1. Load the CFG_IN instruction into the boundary-scan instruction register (IR) on the mode pins (M2, M1, M0). For details on TAP characteristics, refer to XAPP139. Configuration Sequence The configuration of Virtex-E devices is a three-phase process. First, the configuration memory is cleared. Next, configuration data is loaded into the memory, and finally, the logic is activated by a start-up process. Configuration is automatically initiated on power-up unless it is delayed by the user, as described below. The configuration process can also be initiated by asserting PROGRAM. The end of the memory-clearing phase is signalled by INIT going High, and the completion of the entire process is signalled by DONE going High. 2. Enter the Shift-DR (SDR) state 3. Shift a configuration bitstream into TDI 4. Return to Run-Test-Idle (RTI) 5. Load the JSTART instruction into IR 6. Enter the SDR state The power-up timing of configuration signals is shown in Figure 20. 7. Clock TCK through the startup sequence 8. Return to RTI Configuration and readback via the TAP is always available. The boundary-scan mode is selected by a <101> or <001> Vcc TPOR PROGRAM TPL INIT TICCK CCLK OUTPUT or INPUT M0, M1, M2 (Required) VALI ds022_020_071201 Figure 20: Power-Up Timing Configuration Signals The corresponding timing characteristics are listed in Table 12. Table 12: Power-up Timing Characteristics Description Symbol Value Units Power-on Reset1 TPOR 2.0 ms, max Program Latency TPL 100.0 s, max 0.5 s, min 4.0 s, max 300 ns, min CCLK (output) Delay Program Pulse Width TICCK TPROGRAM Notes: 1. TPOR delay is the initialization time required after VCCINT reaches the recommended operating voltage. Module 2 of 4 18 Delaying Configuration INIT can be held Low using an open-drain driver. An open-drain is required since INIT is a bidirectional open-drain pin that is held Low by the FPGA while the configuration memory is being cleared. Extending the time that the pin is Low causes the configuration sequencer to wait. Thus, configuration is delayed by preventing entry into the phase where data is loaded. Start-Up Sequence The default Start-up sequence is that one CCLK cycle after DONE goes High, the global 3-state signal (GTS) is released. This permits device outputs to turn on as necessary. One CCLK cycle later, the Global Set/Reset (GSR) and Global Write Enable (GWE) signals are released. This permits www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays the internal storage elements to begin changing state in response to the logic and the user clock. The relative timing of these events can be changed. In addition, the GTS, GSR, and GWE events can be made depen- dent on the DONE pins of multiple devices all going High, forcing the devices to start synchronously. The sequence can also be paused at any stage until lock has been achieved on any or all DLLs. Readback The configuration data stored in the Virtex-E configuration memory can be readback for verification. Along with the configuration data it is possible to readback the contents all flip-flops/latches, LUT RAMs, and block RAMs. This capa- DS025-2 (v2.3) November 19, 2002 bility is used for real-time debugging. For more detailed information, see application note XAPP138 "Virtex FPGA Series Configuration and Readback". www.xilinx.com 1-800-255-7778 Module 2 of 4 19 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Design Considerations This section contains more detailed design information on the following features. * Delay-Locked Loop . . . see page 20 * BlockRAM . . . see page 24 * SelectI/O . . . see page 31 In order to guarantee the system clock establishes prior to the device "waking up," the DLL can delay the completion of the device configuration process until after the DLL achieves lock. By taking advantage of the DLL to remove on-chip clock delay, the designer can greatly simplify and improve system level design involving high-fanout, high-performance clocks. Using DLLs The Virtex-E FPGA series provides up to eight fully digital dedicated on-chip Delay-Locked Loop (DLL) circuits which provide zero propagation delay, low clock skew between output clock signals distributed throughout the device, and advanced clock domain control. These dedicated DLLs can be used to implement several circuits which improve and simplify system level design. Introduction As FPGAs grow in size, quality on-chip clock distribution becomes increasingly important. Clock skew and clock delay impact device performance and the task of managing clock skew and clock delay with conventional clock trees becomes more difficult in large devices. The Virtex-E series of devices resolve this potential problem by providing up to eight fully digital dedicated on-chip DLL circuits which provide zero propagation delay and low clock skew between output clock signals distributed throughout the device. Library DLL Symbols Figure 21 shows the simplified Xilinx library DLL macro symbol, BUFGDLL. This macro delivers a quick and efficient way to provide a system clock with zero propagation delay throughout the device. Figure 22 and Figure 23 show the two library DLL primitives. These symbols provide access to the complete set of DLL features when implementing more complex applications. I ds022_25_121099 Figure 21: Simplified DLL Macro Symbol BUFGDLL Each DLL can drive up to two global clock routing networks within the device. The global clock distribution network minimizes clock skews due to loading differences. By monitoring a sample of the DLL output clock, the DLL can compensate for the delay on the routing network, effectively eliminating the delay from the external input port to the individual clock loads within the device. In addition to providing zero delay with respect to a user source clock, the DLL can provide multiple phases of the source clock. The DLL can also act as a clock doubler or it can divide the user source clock by up to 16. Clock multiplication gives the designer a number of design alternatives. For instance, a 50 MHz source clock doubled by the DLL can drive an FPGA design operating at 100 MHz. This technique can simplify board design because the clock path on the board no longer distributes such a high-speed signal. A multiplied clock also provides designers the option of time-domain-multiplexing, using one circuit twice per clock cycle, consuming less area than two copies of the same circuit. Two DLLs in can be connected in series to increase the effective clock multiplication factor to four. The DLL can also act as a clock mirror. By driving the DLL output off-chip and then back in again, the DLL can be used to de-skew a board level clock between multiple devices. Module 2 of 4 20 O 0ns www.xilinx.com 1-800-255-7778 CLKDLL CLKIN CLKFB CLK0 CLK90 CLK180 CLK270 CLK2X CLKDV RST LOCKED ds022_26_121099 Figure 22: Standard DLL Symbol CLKDLL CLKDLLHF CLKIN CLKFB CLK0 CLK180 CLKDV RST LOCKED ds022_027_121099 Figure 23: High Frequency DLL Symbol DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays BUFGDLL Pin Descriptions Use the BUFGDLL macro as the simplest way to provide zero propagation delay for a high-fanout on-chip clock from an external input. This macro uses the IBUFG, CLKDLL and BUFG primitives to implement the most basic DLL application as shown in Figure 24. IBUFG I O CLKDLL CLKIN CLKFB CLK0 CLK90 CLK180 CLK270 BUFG I O DLLs. This makes a total of eight usable input pins for DLLs in the Virtex-E family. Feedback Clock Input -- CLKFB The DLL requires a reference or feedback signal to provide the delay-compensated output. Connect only the CLK0 or CLK2X DLL outputs to the feedback clock input (CLKFB) pin to provide the necessary feedback to the DLL. The feedback clock input can also be provided through one of the following pins. IBUFG - Global Clock Input Pad CLK2X IO_LVDS_DLL - the pin adjacent to IBUFG CLKDV RST If an IBUFG sources the CLKFB pin, the following special rules apply. LOCKED ds022_28_121099 1. An external input port must source the signal that drives the IBUFG I pin. 2. The CLK2X output must feedback to the device if both the CLK0 and CLK2X outputs are driving off chip devices. 3. That signal must directly drive only OBUFs and nothing else. Figure 24: BUFGDLL Schematic This symbol does not provide access to the advanced clock domain controls or to the clock multiplication or clock division features of the DLL. This symbol also does not provide access to the RST, or LOCKED pins of the DLL. For access to these features, a designer must use the library DLL primitives described in the following sections. Source Clock Input -- I The I pin provides the user source clock, the clock signal on which the DLL operates, to the BUFGDLL. For the BUFGDLL macro the source clock frequency must fall in the low frequency range as specified in the data sheet. The BUFGDLL requires an external signal source clock. Therefore, only an external input port can source the signal that drives the BUFGDLL I pin. Clock Output -- O The clock output pin O represents a delay-compensated version of the source clock (I) signal. This signal, sourced by a global clock buffer BUFG symbol, takes advantage of the dedicated global clock routing resources of the device. The output clock has a 50-50 duty cycle unless you deactivate the duty cycle correction property. CLKDLL Primitive Pin Descriptions The library CLKDLL primitives provide access to the complete set of DLL features needed when implementing more complex applications with the DLL. Source Clock Input -- CLKIN The CLKIN pin provides the user source clock (the clock signal on which the DLL operates) to the DLL. The CLKIN frequency must fall in the ranges specified in the data sheet. A global clock buffer (BUFG) driven from another CLKDLL, one of the global clock input buffers (IBUFG), or an IO_LVDS_DLL pin on the same edge of the device (top or bottom) must source this clock signal. There are four IO_LVDS_DLL input pins that can be used as inputs to the DS025-2 (v2.3) November 19, 2002 These rules enable the software determine which DLL clock output sources the CLKFB pin. Reset Input -- RST When the reset pin RST activates the LOCKED signal deactivates within four source clock cycles. The RST pin, active High, must either connect to a dynamic signal or tied to ground. As the DLL delay taps reset to zero, glitches can occur on the DLL clock output pins. Activation of the RST pin can also severely affect the duty cycle of the clock output pins. Furthermore, the DLL output clocks no longer de-skew with respect to one another. For these reasons, rarely use the reset pin unless re-configuring the device or changing the input frequency. 2x Clock Output -- CLK2X The output pin CLK2X provides a frequency-doubled clock with an automatic 50/50 duty-cycle correction. Until the CLKDLL has achieved lock, the CLK2X output appears as a 1x version of the input clock with a 25/75 duty cycle. This behavior allows the DLL to lock on the correct edge with respect to source clock. This pin is not available on the CLKDLLHF primitive. Clock Divide Output -- CLKDV The clock divide output pin CLKDV provides a lower frequency version of the source clock. The CLKDV_DIVIDE property controls CLKDV such that the source clock is divided by N where N is either 1.5, 2, 2.5, 3, 4, 5, 8, or 16. This feature provides automatic duty cycle correction such that the CLKDV output pin always has a 50/50 duty cycle, with the exception of noninteger divides in HF mode, where the duty cycle is 1/3 for N=1.5 and 2/5 for N=2.5. www.xilinx.com 1-800-255-7778 Module 2 of 4 21 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays 1x Clock Outputs -- CLK[0|90|180|270] The 1x clock output pin CLK0 represents a delay-compensated version of the source clock (CLKIN) signal. The CLKDLL primitive provides three phase-shifted versions of the CLK0 signal while CLKDLLHF provides only the 180 phase-shifted version. The relationship between phase shift and the corresponding period shift appears in Table 13. Table 13: Relationship of Phase-Shifted Output Clock to Period Shift Phase (degrees) Period Shift (percent) 0 0% 90 25% 180 50% 270 75% 90 180 270 0 90 180 270 t To achieve lock, the DLL might need to sample several thousand clock cycles. After the DLL achieves lock, the LOCKED signal activates. The DLL timing parameter section of the data sheet provides estimates for locking times. To guarantee that the system clock is established prior to the device "waking up," the DLL can delay the completion of the device configuration process until after the DLL locks. The STARTUP_WAIT property activates this feature. DLL Properties Properties provide access to some of the Virtex-E series DLL features, (for example, clock division and duty cycle correction). Duty Cycle Correction Property CLKIN The 1x clock outputs, CLK0, CLK90, CLK180, and CLK270, use the duty-cycle corrected default, exhibiting a 50/50 duty cycle. The DUTY_CYCLE_CORRECTION property (by default TRUE) controls this feature. To deactivate the DLL duty-cycle correction for the 1x clock outputs, attach the DUTY_CYCLE_CORRECTION=FALSE property to the DLL symbol. CLK2X CLKDV_DIVIDE=2 CLKDV DUTY_CYCLE_CORRECTION=FALSE CLK0 Clock Divide Property CLK90 The CLKDV_DIVIDE property specifies how the signal on the CLKDV pin is frequency divided with respect to the CLK0 pin. The values allowed for this property are 1.5, 2, 2.5, 3, 4, 5, 8, or 16; the default value is 2. CLK180 CLK270 DUTY_CYCLE_CORRECTION=TRUE Startup Delay Property CLK0 This property, STARTUP_WAIT, takes on a value of TRUE or FALSE (the default value). When TRUE the device configuration DONE signal waits until the DLL locks before going to High. CLK90 CLK180 CLK270 Virtex-E DLL Location Constraints ds022_29_121099 Figure 25: DLL Output Characteristics The DLL provides duty cycle correction on all 1x clock outputs such that all 1x clock outputs by default have a 50/50 duty cycle. The DUTY_CYCLE_CORRECTION property (TRUE by default), controls this feature. In order to deactivate the DLL duty cycle correction, attach the DUTY_CYCLE_CORRECTION=FALSE property to the DLL symbol. When duty cycle correction deactivates, the output clock has the same duty cycle as the source clock. Module 2 of 4 22 Locked Output -- LOCKED Until the LOCKED signal activates, the DLL output clocks are not valid and can exhibit glitches, spikes, or other spurious movement. In particular the CLK2X output appears as a 1x clock with a 25/75 duty cycle. The timing diagrams in Figure 25 illustrate the DLL clock output characteristics. 0 The DLL clock outputs can drive an OBUF, a BUFG, or they can route directly to destination clock pins. The DLL clock outputs can only drive the BUFGs that reside on the same edge (top or bottom). As shown in Figure 26, there are four additional DLLs in the Virtex-E devices, for a total of eight per Virtex-E device. These DLLs are located in silicon, at the top and bottom of the two innermost block SelectRAM columns. The location constraint LOC, attached to the DLL symbol with the identifier DLL0S, DLL0P, DLL1S, DLL1P, DLL2S, DLL2P, DLL3S, or DLL3P, controls the DLL location. The LOC property uses the following form: LOC = DLL0P www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays DLL-3S DLL-3P DLL-2P DLL-2S B R A M B R A M B R A M B R A M DLL-1S DLL-1P DLL-0P DLL-0S In a similar manner, a phase shift of the input clock is also possible. The phase shift propagates one to four clocks to the output after the original shift, with no disruption to the CLKDLL control. Output Clocks Bottom Right Half Edge x132_14_100799 Figure 26: Virtex Series DLLs Design Factors Use the following design considerations to avoid pitfalls and improve success designing with Xilinx devices. Input Clock The output clock signal of a DLL, essentially a delayed version of the input clock signal, reflects any instability on the input clock in the output waveform. For this reason the quality of the DLL input clock relates directly to the quality of the output clock waveforms generated by the DLL. The DLL input clock requirements are specified in the data sheet. In most systems a crystal oscillator generates the system clock. The DLL can be used with any commercially available quartz crystal oscillator. For example, most crystal oscillators produce an output waveform with a frequency tolerance of 100 PPM, meaning 0.01 percent change in the clock period. The DLL operates reliably on an input waveform with a frequency drift of up to 1 ns -- orders of magnitude in excess of that needed to support any crystal oscillator in the industry. However, the cycle-to-cycle jitter must be kept to less than 300 ps in the low frequencies and 150 ps for the high frequencies. As mentioned earlier in the DLL pin descriptions, some restrictions apply regarding the connectivity of the output pins. The DLL clock outputs can drive an OBUF, a global clock buffer BUFG, or they can route directly to destination clock pins. The only BUFGs that the DLL clock outputs can drive are the two on the same edge of the device (top or bottom). In addition, the CLK2X output of the secondary DLL can connect directly to the CLKIN of the primary DLL in the same quadrant. Do not use the DLL output clock signals until after activation of the LOCKED signal. Prior to the activation of the LOCKED signal, the DLL output clocks are not valid and can exhibit glitches, spikes, or other spurious movement. Useful Application Examples The Virtex-E DLL can be used in a variety of creative and useful applications. The following examples show some of the more common applications. The Verilog and VHDL example files are available at: ftp://ftp.xilinx.com/pub/applications/xapp/xapp132.zip Standard Usage The circuit shown in Figure 27 resembles the BUFGDLL macro implemented to provide access to the RST and LOCKED pins of the CLKDLL. CLKDLL IBUFG CLKIN CLKFB Input Clock Changes BUFG CLK0 CLK90 CLK180 CLK270 CLK2X CLKDV Changing the period of the input clock beyond the maximum drift amount requires a manual reset of the CLKDLL. Failure to reset the DLL produces an unreliable lock signal and output clock. It is possible to stop the input clock with little impact to the DLL. Stopping the clock should be limited to less than 100 s to keep device cooling to a minimum. The clock should be stopped during a Low phase, and when restored the full High period should be seen. During this time LOCKED stays High and remains High when the clock is restored. When the clock is stopped, one to four more clocks are still observed as the delay line is flushed. When the clock is restarted, the output clocks are not observed for one to four clocks as the delay line is filled. The most common case is two or three clocks. DS025-2 (v2.3) November 19, 2002 OBUF IBUF RST LOCKED ds022_028_121099 Figure 27: Standard DLL Implementation Board Level De-Skew of Multiple Non-Virtex-E Devices The circuit shown in Figure 28 can be used to de-skew a system clock between a Virtex-E chip and other non-Virtex-E chips on the same board. This application is commonly used when the Virtex-E device is used in conjunction with other standard products such as SRAM or DRAM devices. While designing the board level route, ensure that the return net delay to the source equals the delay to the other chips involved. www.xilinx.com 1-800-255-7778 Module 2 of 4 23 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Because any single DLL can access only two BUFGs at most, any additional output clock signals must be routed from the DLL in this example on the high speed backbone routing. Virtex-E Device CLKDLL IBUFG CLKIN OBUF CLK0 CLK90 CLK180 CLK270 CLKFB IBUFG The dll_2x files in the xapp132.zip file show the VHDL and Verilog implementation of this circuit. CLK2X Virtex-E 4x Clock CLKDV RST LOCKED BUFG CLKDLL CLKIN Two DLLs located in the same half-edge (top-left, top-right, bottom-right, bottom-left) can be connected together, without using a BUFG between the CLKDLLs, to generate a 4x clock as shown in Figure 30. Virtex-E devices, like the Virtex devices, have four clock networks that are available for internal de-skewing of the clock. Each of the eight DLLs have access to two of the four clock networks. Although all the DLLs can be used for internal de-skewing, the presence of two GCLKBUFs on the top and two on the bottom indicate that only two of the four DLLs on the top (and two of the four DLLs on the bottom) can be used for this purpose. CLK0 CLK90 CLK180 CLK270 CLKFB CLK2X CLKDV RST LOCKED Non-Virtex-E Chip CLKDLL-S IBUFG Non-Virtex-E Chip CLKIN CLKFB Other Non_Virtex-E Chips CLK0 CLK90 CLK180 CLK270 ds022_029_121099 CLK2X Figure 28: DLL De-skew of Board Level Clock CLKDV RST Board-level de-skew is not required for low-fanout clock networks. It is recommended for systems that have fanout limitations on the clock network, or if the clock distribution chip cannot handle the load. INV LOCKED CLKDLL-P CLKIN CLKFB Do not use the DLL output clock signals until after activation of the LOCKED signal. Prior to the activation of the LOCKED signal, the DLL output clocks are not valid and can exhibit glitches, spikes, or other spurious movement. CLK0 CLK90 CLK180 CLK270 BUFG CLK2X CLKDV RST OBUF LOCKED The dll_mirror_1 files in the xapp132.zip file show the VHDL and Verilog implementation of this circuit. ds022_031_041901 De-Skew of Clock and Its 2x Multiple The circuit shown in Figure 29 implements a 2x clock multiplier and also uses the CLK0 clock output with zero ns skew between registers on the same chip. A clock divider circuit could alternatively be implemented using similar connections. Figure 30: DLL Generation of 4x Clock in Virtex-E Devices The dll_4xe files in the xapp 32.zip file show the DLL implementation in Verilog for Virtex-E devices. These files can be found at: ftp://ftp.xilinx.com/pub/applications/xapp/xapp132.zip CLKDLL IBUFG CLKIN CLKFB BUFG CLK0 CLK90 CLK180 CLK270 Using Block SelectRAM+ Features BUFG CLK2X CLKDV IBUF RST OBUF LOCKED ds022_030_121099 Figure 29: DLL De-skew of Clock and 2x Multiple Module 2 of 4 24 The Virtex FPGA Series provides dedicated blocks of on-chip, true dual-read/write port synchronous RAM, with 4096 memory cells. Each port of the block SelectRAM+ memory can be independently configured as a read/write port, a read port, a write port, and can be configured to a specific data width. block SelectRAM+ memory offers new capabilities, allowing FPGA designers to simplify designs. www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Operating Modes RAMB4_S#_S# Virtex-E block SelectRAM+ memory supports two operating modes. * Read Through * Write Back WEA ENA RSTA CLKA ADDRA[#:0] DIA[#:0] DOA[#:0] Read Through (one clock edge) The read address is registered on the read port clock edge and data appears on the output after the RAM access time. Some memories might place the latch/register at the outputs, depending on the desire to have a faster clock-to-out versus set-up time. This is generally considered to be an inferior solution, since it changes the read operation to an asynchronous function with the possibility of missing an address/control line transition during the generation of the read pulse clock. WEB ENB RSTB CLKB ADDRB[#:0] DIB[#:0] DOB[#:0] ds022_032_121399 Figure 31: Dual-Port Block SelectRAM+ Memory RAMB4_S# Write Back (one clock edge) WE EN RST The write address is registered on the write port clock edge and the data input is written to the memory and mirrored on the output. Block SelectRAM+ Characteristics 1. All inputs are registered with the port clock and have a set-up to clock timing specification. 2. All outputs have a read through or write back function depending on the state of the port WE pin. The outputs relative to the port clock are available after the clock-to-out timing specification. 3. The block SelectRAM elements are true SRAM memories and do not have a combinatorial path from the address to the output. The LUT SelectRAM+ cells in the CLBs are still available with this function. DO[#:0] CLK ADDR[#:0] DI[#:0] ds022_033_121399 Figure 32: Single-Port Block SelectRAM+ Memory Table 14: Available Library Primitives Primitive RAMB4_S1 Port A Width Port B Width 1 N/A RAMB4_S1_S1 1 RAMB4_S1_S2 2 RAMB4_S1_S4 4 4. The ports are completely independent from each other (i.e., clocking, control, address, read/write function, and data width) without arbitration. RAMB4_S1_S8 8 RAMB4_S1_S16 16 5. A write operation requires only one clock edge. RAMB4_S2 6. A read operation requires only one clock edge. RAMB4_S2_S2 2 RAMB4_S2_S4 4 2 N/A The output ports are latched with a self-timed circuit to guarantee a glitch-free read. The state of the output port does not change until the port executes another read or write operation. RAMB4_S4 Library Primitives RAMB4_S4_S4 4 RAMB4_S4_S8 8 RAMB4_S4_S16 16 Figure 31 and Figure 32 show the two generic library block SelectRAM+ primitives. Table 14 describes all of the available primitives for synthesis and simulation. RAMB4_S2_S8 8 RAMB4_S2_S16 16 RAMB4_S8 8 N/A N/A RAMB4_S8_S8 8 RAMB4_S8_S16 16 RAMB4_S16 RAMB4_S16_S16 DS025-2 (v2.3) November 19, 2002 4 www.xilinx.com 1-800-255-7778 16 N/A 16 Module 2 of 4 25 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Port Signals Data Output Bus--DO[A|B]<#:0> Each block SelectRAM+ port operates independently of the others while accessing the same set of 4096 memory cells. The data out bus reflects the contents of the memory cells referenced by the address bus at the last active clock edge. During a write operation, the data out bus reflects the data in bus. The width of this bus equals the width of the port. The allowed widths appear in Table 15. Table 15 describes the depth and width aspect ratios for the block SelectRAM+ memory. Table 15: Block SelectRAM+ Port Aspect Ratios Inverting Control Pins Width Depth ADDR Bus Data Bus 1 4096 ADDR<11:0> DATA<0> 2 2048 ADDR<10:0> DATA<1:0> 4 1024 ADDR<9:0> DATA<3:0> Address Mapping 8 512 ADDR<8:0> DATA<7:0> 16 256 ADDR<7:0> DATA<15:0> Each port accesses the same set of 4096 memory cells using an addressing scheme dependent on the width of the port. The physical RAM location addressed for a particular width are described in the following formula (of interest only when the two ports use different aspect ratios). Clock--CLK[A|B] Each port is fully synchronous with independent clock pins. All port input pins have setup time referenced to the port CLK pin. The data output bus has a clock-to-out time referenced to the CLK pin. The four control pins (CLK, EN, WE and RST) for each port have independent inversion control as a configuration option. Start = ((ADDRport +1) * Widthport) -1 End = ADDRport * Widthport Table 16 shows low order address mapping for each port width. Enable--EN[A|B] The enable pin affects the read, write and reset functionality of the port. Ports with an inactive enable pin keep the output pins in the previous state and do not write data to the memory cells. Table 16: Port Address Mapping Port Port Width Addresses Write Enable--WE[A|B] 1 4095... 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 5 4 3 2 1 0 9 8 7 6 5 4 3 2 1 0 Activating the write enable pin allows the port to write to the memory cells. When active, the contents of the data input bus are written to the RAM at the address pointed to by the address bus, and the new data also reflects on the data out bus. When inactive, a read operation occurs and the contents of the memory cells referenced by the address bus reflect on the data out bus. 2 2047... 07 4 1023... 8 511... 16 255... Reset--RST[A|B] The reset pin forces the data output bus latches to zero synchronously. This does not affect the memory cells of the RAM and does not disturb a write operation on the other port. 06 05 03 04 03 02 02 01 01 01 00 00 00 00 Creating Larger RAM Structures The block SelectRAM+ columns have specialized routing to allow cascading blocks together with minimal routing delays. This achieves wider or deeper RAM structures with a smaller timing penalty than when using normal routing channels. Address Bus--ADDR[A|B]<#:0> Location Constraints The address bus selects the memory cells for read or write. The width of the port determines the required width of this bus as shown in Table 15. Block SelectRAM+ instances can have LOC properties attached to them to constrain the placement. The block SelectRAM+ placement locations are separate from the CLB location naming convention, allowing the LOC properties to transfer easily from array to array. Data In Bus--DI[A|B]<#:0> The data in bus provides the new data value to be written into the RAM. This bus and the port have the same width, as shown in Table 15. The LOC properties use the following form. LOC = RAMB4_R#C# RAMB4_R0C0 is the upper left RAMB4 location on the device. Module 2 of 4 26 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Conflict Resolution The block SelectRAM+ memory is a true dual-read/write port RAM that allows simultaneous access of the same memory cell from both ports. When one port writes to a given memory cell, the other port must not address that memory cell (for a write or a read) within the clock-to-clock setup window. The following lists specifics of port and memory cell write conflict resolution. * If both ports write to the same memory cell simultaneously, violating the clock-to-clock setup requirement, consider the data stored as invalid. * If one port attempts a read of the same memory cell the other simultaneously writes, violating the clock-to-clock setup requirement, the following occurs. - The write succeeds - The data out on the writing port accurately reflects the data written. - The data out on the reading port is invalid. Conflicts do not cause any physical damage. Single Port Timing Figure 33 shows a timing diagram for a single port of a block SelectRAM+ memory. The block SelectRAM+ AC switching characteristics are specified in the data sheet. The block SelectRAM+ memory is initially disabled. At the first rising edge of the CLK pin, the ADDR, DI, EN, WE, and RST pins are sampled. The EN pin is High and the WE pin is Low indicating a read operation. The DO bus contains the contents of the memory location, 0x00, as indicated by the ADDR bus. At the second rising edge of the CLK pin, the ADDR, DI, EN, WR, and RST pins are sampled again. The EN and WE pins are High indicating a write operation. The DO bus mirrors the DI bus. The DI bus is written to the memory location 0x0F. At the third rising edge of the CLK pin, the ADDR, DI, EN, WR, and RST pins are sampled again. The EN pin is High DS025-2 (v2.3) November 19, 2002 and the WE pin is Low indicating a read operation. The DO bus contains the contents of the memory location 0x7E as indicated by the ADDR bus. At the fourth rising edge of the CLK pin, the ADDR, DI, EN, WR, and RST pins are sampled again. The EN pin is Low indicating that the block SelectRAM+ memory is now disabled. The DO bus retains the last value. Dual Port Timing Figure 34 shows a timing diagram for a true dual-port read/write block SelectRAM+ memory. The clock on port A has a longer period than the clock on Port B. The timing parameter TBCCS, (clock-to-clock set-up) is shown on this diagram. The parameter, TBCCS is violated once in the diagram. All other timing parameters are identical to the single port version shown in Figure 33. TBCCS is only of importance when the address of both ports are the same and at least one port is performing a write operation. When the clock-to-clock set-up parameter is violated for a WRITE-WRITE condition, the contents of the memory at that location are invalid. When the clock-to-clock set-up parameter is violated for a WRITE-READ condition, the contents of the memory are correct, but the read port has invalid data. At the first rising edge of CLKA, memory location 0x00 is to be written with the value 0xAAAA and is mirrored on the DOA bus. The last operation of Port B was a read to the same memory location 0x00. The DOB bus of Port B does not change with the new value on Port A, and retains the last read value. A short time later, Port B executes another read to memory location 0x00, and the DOB bus now reflects the new memory value written by Port A. At the second rising edge of CLKA, memory location 0x7E is written with the value 0x9999 and is mirrored on the DOA bus. Port B then executes a read operation to the same memory location without violating the TBCCS parameter and the DOB reflects the new memory values written by Port A. www.xilinx.com 1-800-255-7778 Module 2 of 4 27 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays TBPWH TBPWL CLK TBACK ADDR 00 0F 7E 8F CCCC BBBB 2222 TBDCK DDDD DIN TBCKO DOUT MEM (00) CCCC MEM (7E) TBECK EN RST TBWCK WE DISABLED READ WRITE READ DISABLED ds022_0343_121399 Figure 33: Timing Diagram for Single Port Block SelectRAM+ Memory TBCCS VIOLATION CLK_A PORT A ADDR_A 00 EN_A 7E 0F 0F 7E TBCCS TBCCS WE_A DI_A AAAA DO_A 9999 AAAA AAAA 1111 0000 9999 AAAA UNKNOWN 2222 CLK_B PORT B ADDR_B 00 00 7E 0F 0F 7E 1A 1111 1111 1111 BBBB 1111 2222 FFFF EN_B WE_B DI_B DO_B MEM (00) AAAA 9999 BBBB UNKNOWN 2222 FFFF ds022_035_121399 Figure 34: Timing Diagram for a True Dual-port Read/Write Block SelectRAM+ Memory At the third rising edge of CLKA, the TBCCS parameter is violated with two writes to memory location 0x0F. The DOA and DOB busses reflect the contents of the DIA and DIB busses, but the stored value at 0x0F is invalid. At the fourth rising edge of CLKA, a read operation is performed at memory location 0x0F and invalid data is present Module 2 of 4 28 on the DOA bus. Port B also executes a read operation to memory location 0x0F and also reads invalid data. At the fifth rising edge of CLKA a read operation is performed that does not violate the TBCCS parameter to the previous write of 0x7E by Port B. THe DOA bus reflects the recently written value by Port B. www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Initialization Design Examples The block SelectRAM+ memory can initialize during the device configuration sequence. The 16 initialization properties of 64 hex values each (a total of 4096 bits) set the initialization of each RAM. These properties appear in Table 17. Any initialization properties not explicitly set configure as zeros. Partial initialization strings pad with zeros. Initialization strings greater than 64 hex values generate an error. The RAMs can be simulated with the initialization values using generics in VHDL simulators and parameters in Verilog simulators. Creating a 32-bit Single-Port RAM Initialization in VHDL and Synopsys The true dual-read/write port functionality of the block SelectRAM+ memory allows a single port, 128 deep by 32-bit wide RAM to be created using a single block SelectRAM+ cell as shown inTable 35. Interleaving the memory space, setting the LSB of the address bus of Port A to 1 (VCC), and the LSB of the address bus of Port B to 0 (GND), allows a 32-bit wide single port RAM to be created. The block SelectRAM+ structures can be initialized in VHDL for both simulation and synthesis for inclusion in the EDIF output file. The simulation of the VHDL code uses a generic to pass the initialization. Synopsys FPGA compiler does not presently support generics. The initialization values instead attach as attributes to the RAM by a built-in Synopsys dc_script. The translate_off statement stops synthesis translation of the generic statements. The following code illustrates a module that employs these techniques. Table 17: RAMB4_S16_S16 WE EN RST CLK ADDR[6:0], V CC DI[31:16] WEA ENA RSTA CLKA ADDRA[7:0] DIA[15:0] WE EN RST CLK ADDR[6:0], GND DI[15:0] WEB ENB RSTB CLKB ADDRB[7:0] DIB[15:0] DOA[15:0] DO[31:16] DOB[15:0] DO[15:0] RAM Initialization Properties ds022_036_121399 Property Memory Cells INIT_00 255 to 0 INIT_01 511 to 256 Creating Two Single-Port RAMs INIT_02 767 to 512 INIT_03 1023 to 768 The true dual-read/write port functionality of the block SelectRAM+ memory allows a single RAM to be split into two single port memories of 2K bits each as shown in Figure 36. INIT_04 1279 to 1024 INIT_05 1535 to 1280 Figure 35: Single Port 128 x 32 RAM RAMB4_S4_S16 WE1 EN1 RST1 CLK1 V CC , ADDR1[8:0] DI1[3:0] WEA ENA RSTA CLKA ADDRA[9:0] DIA[3:0] WE2 EN2 RST2 CLK2 GND, ADDR2[6:0] DI2[15:0] WEB ENB RSTB CLKB ADDRB[7:0] DIB[15:0] INIT_06 1791 to 2047 INIT_07 2047 to 1792 INIT_08 2303 to 2048 INIT_09 2559 to 2304 INIT_0a 2815 to 2560 INIT_0b 3071 to 2816 INIT_0c 3327 to 3072 INIT_0d 3583 to 3328 Figure 36: 512 x 4 RAM and 128 x 16 RAM INIT_0e 3839 to 3584 INIT_0f 4095 to 3840 In this example, a 512K x 4 RAM (Port A) and a 128 x 16 RAM (Port B) are created out of a single block SelectRAM+. The address space for the RAM is split by fixing the MSB of Port A to 1 (VCC) for the upper 2K bits and the MSB of Port B to 0 (GND) for the lower 2K bits. DOA[3:0] DO1[3:0] DOB[15:0] DO2[15:0] ds022_037_121399 Initialization in Verilog and Synopsys The block SelectRAM+ structures can be initialized in Verilog for both simulation and synthesis for inclusion in the EDIF output file. The simulation of the Verilog code uses a defparam to pass the initialization. The Synopsys FPGA compiler does not presently support defparam. The initialization values instead attach as attributes to the RAM by a built-in Synopsys dc_script. The translate_off statement stops synthesis translation of the defparam statements. The following code illustrates a module that employs these techniques. DS025-2 (v2.3) November 19, 2002 Block Memory Generation The CoreGen program generates memory structures using the block SelectRAM+ features. This program outputs VHDL or Verilog simulation code templates and an EDIF file for inclusion in a design. www.xilinx.com 1-800-255-7778 Module 2 of 4 29 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays VHDL Initialization Example library IEEE; use IEEE.std_logic_1164.all; entity MYMEM is port (CLK, WE:in std_logic; ADDR: in std_logic_vector(8 downto 0); DIN: in std_logic_vector(7 downto 0); DOUT: out std_logic_vector(7 downto 0)); end MYMEM; architecture BEHAVE of MYMEM is signal logic0, logic1: std_logic; component RAMB4_S8 --synopsys translate_off generic( INIT_00,INIT_01, INIT_02, INIT_03, INIT_04, INIT_05, INIT_06, INIT_07, INIT_08, INIT_09, INIT_0a, INIT_0b, INIT_0c, INIT_0d, INIT_0e, INIT_0f : BIT_VECTOR(255 downto 0) := X"0000000000000000000000000000000000000000000000000000000000000000"); --synopsys translate_on port (WE, EN, RST, CLK: in STD_LOGIC; ADDR: in STD_LOGIC_VECTOR(8 downto 0); DI: in STD_LOGIC_VECTOR(7 downto 0); DO: out STD_LOGIC_VECTOR(7 downto 0)); end component; --synopsys dc_script_begin --set_attribute ram0 INIT_00 "0123456789ABCDEF0123456789ABCDEF0123456789ABCDEF0123456789ABCDEF" -type string --set_attribute ram0 INIT_01 "FEDCBA9876543210FEDCBA9876543210FEDCBA9876543210FEDCBA9876543210" -type string --synopsys dc_script_end begin logic0 <='0'; logic1 <='1'; ram0: RAMB4_S8 --synopsys translate_off generic map ( INIT_00 => X"0123456789ABCDEF0123456789ABCDEF0123456789ABCDEF0123456789ABCDEF", INIT_01 => X"FEDCBA9876543210FEDCBA9876543210FEDCBA9876543210FEDCBA9876543210") --synopsys translate_on port map (WE=>WE, EN=>logic1, RST=>logic0, CLK=>CLK,ADDR=>ADDR, DI=>DIN, DO=>DOUT); end BEHAVE; Module 2 of 4 30 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Verilog Initialization Example module MYMEM (CLK, WE, ADDR, DIN, DOUT); input CLK, WE; input [8:0] ADDR; input [7:0] DIN; output [7:0] DOUT; wire logic0, logic1; //synopsys dc_script_begin //set_attribute ram0 INIT_00 "0123456789ABCDEF0123456789ABCDEF0123456789ABCDEF0123456789ABCDEF" -type string //set_attribute ram0 INIT_01 "FEDCBA9876543210FEDCBA9876543210FEDCBA9876543210FEDCBA9876543210" -type string //synopsys dc_script_end assign logic0 = 1'b0; assign logic1 = 1'b1; RAMB4_S8 ram0 (.WE(WE), .EN(logic1), .RST(logic0), .CLK(CLK), .ADDR(ADDR), .DI(DIN), .DO(DOUT)); //synopsys translate_off defparam ram0.INIT_00 = 256h'0123456789ABCDEF0123456789ABCDEF0123456789ABCDEF0123456789ABCDEF; defparam ram0.INIT_01 = 256h'FEDCBA9876543210FEDCBA9876543210FEDCBA9876543210FEDCBA9876543210; //synopsys translate_on endmodule Using SelectI/O The Virtex-E FPGA series includes a highly configurable, high-performance I/O resource, called SelectI/OTM to provide support for a wide variety of I/O standards. The SelectI/O resource is a robust set of features including programmable control of output drive strength, slew rate, and input delay and hold time. Taking advantage of the flexibility and SelectI/O features and the design considerations described in this document can improve and simplify system level design. Introduction As FPGAs continue to grow in size and capacity, the larger and more complex systems designed for them demand an increased variety of I/O standards. Furthermore, as system clock speeds continue to increase, the need for high performance I/O becomes more important. While chip-to-chip delays have an increasingly substantial impact on overall system speed, the task of achieving the desired system performance becomes more difficult with the proliferation of low-voltage I/O standards. SelectI/O, the revolutionary input/output resource of Virtex-E devices, has resolved this potential problem by providing a highly configurable, high-performance alternative to the I/O resources of more conventional programmable devices. The Virtex-E SelectI/O features combine the flexibility and time-to-market advantages of programmable logic DS025-2 (v2.3) November 19, 2002 with the high performance previously available only with ASICs and custom ICs. Each SelectI/O block can support up to 20 I/O standards. Supporting such a variety of I/O standards allows the support of a wide variety of applications, from general purpose standard applications to high-speed low-voltage memory busses. SelectI/O blocks also provide selectable output drive strengths and programmable slew rates for the LVTTL output buffers, as well as an optional, programmable weak pull-up, weak pull-down, or weak "keeper" circuit ideal for use in external bussing applications. Each input/output block (IOB) includes three registers, one each for the input, output, and 3-state signals within the IOB. These registers are optionally configurable as either a D-type flip-flop or as a level sensitive latch. The input buffer has an optional delay element used to guarantee a zero hold time requirement for input signals registered within the IOB. The Virtex-E SelectI/O features also provide dedicated resources for input reference voltage (VREF) and output source voltage (VCCO), along with a convenient banking system that simplifies board design. By taking advantage of the built-in features and wide variety of I/O standards supported by the SelectI/O features, system-level design and board design can be greatly simplified and improved. www.xilinx.com 1-800-255-7778 Module 2 of 4 31 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Fundamentals Overview of Supported I/O Standards Modern bus applications, pioneered by the largest and most influential companies in the digital electronics industry, are commonly introduced with a new I/O standard tailored specifically to the needs of that application. The bus I/O standards provide specifications to other vendors who create products designed to interface with these applications. Each standard often has its own specifications for current, voltage, I/O buffering, and termination techniques. This section provides a brief overview of the I/O standards supported by all Virtex-E devices. The ability to provide the flexibility and time-to-market advantages of programmable logic is increasingly dependent on the capability of the programmable logic device to support an ever increasing variety of I/O standards LVTTL -- Low-Voltage TTL The SelectI/O resources feature highly configurable input and output buffers which provide support for a wide variety of I/O standards. As shown in Table 18, each buffer type can support a variety of voltage requirements. Table 18: Virtex-E Supported I/O Standards While most I/O standards specify a range of allowed voltages, this document records typical voltage values only. Detailed information on each specification can be found on the Electronic Industry Alliance Jedec website at: http://www.jedec.org The Low-Voltage TTL, or LVTTL standard is a general purpose EIA/JESDSA standard for 3.3 V applications that uses an LVTTL input buffer and a Push-Pull output buffer. This standard requires a 3.3 V output source voltage (VCCO), but does not require the use of a reference voltage (VREF) or a termination voltage (VTT). LVCMOS2 -- Low-Voltage CMOS for 2.5 Volts The Low-Voltage CMOS for 2.5 Volts or lower, or LVCMOS2 standard is an extension of the LVCMOS standard (JESD 8.-5) used for general purpose 2.5 V applications. This standard requires a 2.5 V output source voltage (VCCO), but does not require the use of a reference voltage (VREF) or a board termination voltage (VTT). I/O Output Input Input Standard VCCO VCCO VREF Board Termination Voltage (VTT) LVTTL 3.3 3.3 N/A N/A LVCMOS2 2.5 2.5 N/A N/A LVCMOS18 1.8 1.8 N/A N/A SSTL3 I & II 3.3 N/A 1.50 1.50 This standard is an extension of the LVCMOS standard. It is used in general purpose 1.8 V applications. The use of a reference voltage (VREF) or a board termination voltage (VTT) is not required. SSTL2 I & II 2.5 N/A 1.25 1.25 PCI -- Peripheral Component Interface GTL N/A N/A 0.80 1.20 GTL+ N/A N/A 1.0 1.50 HSTL I 1.5 N/A 0.75 0.75 HSTL III & IV 1.5 N/A 0.90 1.50 GTL -- Gunning Transceiver Logic Terminated CTT 3.3 N/A 1.50 1.50 AGP-2X 3.3 N/A 1.32 N/A PCI33_3 3.3 3.3 N/A N/A The Gunning Transceiver Logic, or GTL standard is a high-speed bus standard (JESD8.3) invented by Xerox. Xilinx has implemented the terminated variation for this standard. This standard requires a differential amplifier input buffer and a Open Drain output buffer. PCI66_3 3.3 3.3 N/A N/A GTL+ -- Gunning Transceiver Logic Plus BLVDS & LVDS 2.5 N/A N/A N/A LVPECL 3.3 N/A N/A N/A The Gunning Transceiver Logic Plus, or GTL+ standard is a high-speed bus standard (JESD8.3) first used by the Pentium Pro processor. LVCMOS18 -- 1.8 V Low Voltage CMOS The Peripheral Component Interface, or PCI standard specifies support for both 33 MHz and 66 MHz PCI bus applications. It uses a LVTTL input buffer and a Push-Pull output buffer. This standard does not require the use of a reference voltage (VREF) or a board termination voltage (VTT), however, it does require a 3.3 V output source voltage (VCCO). HSTL -- High-Speed Transceiver Logic The High-Speed Transceiver Logic, or HSTL standard is a general purpose high-speed, 1.5 V bus standard sponsored by IBM (EIA/JESD 8-6). This standard has four variations or classes. SelectI/O devices support Class I, III, and IV. This Module 2 of 4 32 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays standard requires a Differential Amplifier input buffer and a Push-Pull output buffer. SSTL3 -- Stub Series Terminated Logic for 3.3V The Stub Series Terminated Logic for 3.3 V, or SSTL3 standard is a general purpose 3.3 V memory bus standard also sponsored by Hitachi and IBM (JESD8-8). This standard has two classes, I and II. SelectI/O devices support both classes for the SSTL3 standard. This standard requires a Differential Amplifier input buffer and an Push-Pull output buffer. SSTL2 -- Stub Series Terminated Logic for 2.5V The Stub Series Terminated Logic for 2.5 V, or SSTL2 standard is a general purpose 2.5 V memory bus standard sponsored by Hitachi and IBM (JESD8-9). This standard has two classes, I and II. SelectI/O devices support both classes for the SSTL2 standard. This standard requires a Differential Amplifier input buffer and an Push-Pull output buffer. Library Symbols The Xilinx library includes an extensive list of symbols designed to provide support for the variety of SelectI/O features. Most of these symbols represent variations of the five generic SelectI/O symbols. * * * * * IBUF (input buffer) IBUFG (global clock input buffer) OBUF (output buffer) OBUFT (3-state output buffer) IOBUF (input/output buffer) IBUF Signals used as inputs to the Virtex-E device must source an input buffer (IBUF) via an external input port. The generic Virtex-E IBUF symbol appears in Figure 37. The extension to the base name defines which I/O standard the IBUF uses. The assumed standard is LVTTL when the generic IBUF has no specified extension. CTT -- Center Tap Terminated IBUF The Center Tap Terminated, or CTT standard is a 3.3 V memory bus standard sponsored by Fujitsu (JESD8-4). This standard requires a Differential Amplifier input buffer and a Push-Pull output buffer. I x133_01_111699 AGP-2X -- Advanced Graphics Port Figure 37: Input Buffer (IBUF) Symbols The Intel AGP standard is a 3.3 V Advanced Graphics Port-2X bus standard used with the Pentium II processor for graphics applications. This standard requires a Push-Pull output buffer and a Differential Amplifier input buffer. LVDS -- Low Voltage Differential Signal LVDS is a differential I/O standard. It requires that one data bit is carried through two signal lines. As with all differential signaling standards, LVDS has an inherent noise immunity over single-ended I/O standards. The voltage swing between two signal lines is approximately 350 mV. The use of a reference voltage (VREF) or a board termination voltage (VTT) is not required. LVDS requires the use of two pins per input or output. LVDS requires external resistor termination. BLVDS -- Bus LVDS This standard allows for bidirectional LVDS communication between two or more devices. The external resistor termination is different than the one for standard LVDS. LVPECL -- Low Voltage Positive Emitter Coupled Logic LVPECL is another differential I/O standard. It requires two signal lines for transmitting one data bit. This standard specifies two pins per input or output. The voltage swing between these two signal lines is approximately 850 mV. The use of a reference voltage (VREF) or a board termination voltage (VTT) is not required. The LVPECL standard requires external resistor termination. DS025-2 (v2.3) November 19, 2002 O The following list details the variations of the IBUF symbol: * * * * * * * * * * * * * * * * * * IBUF IBUF_LVCMOS2 IBUF_PCI33_3 IBUF_PCI66_3 IBUF_GTL IBUF_GTLP IBUF_HSTL_I IBUF_HSTL_III IBUF_HSTL_IV IBUF_SSTL3_I IBUF_SSTL3_II IBUF_SSTL2_I IBUF_SSTL2_II IBUF_CTT IBUF_AGP IBUF_LVCMOS18 IBUF_LVDS IBUF_LVPECL When the IBUF symbol supports an I/O standard that requires a VREF, the IBUF automatically configures as a differential amplifier input buffer. The VREF voltage must be supplied on the VREF pins. In the case of LVDS, LVPECL, and BLVDS, VREF is not required. www.xilinx.com 1-800-255-7778 Module 2 of 4 33 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays The voltage reference signal is "banked" within the Virtex-E device on a half-edge basis such that for all packages there are eight independent VREF banks internally. See Figure 38 for a representation of the Virtex-E I/O banks. Within each bank approximately one of every six I/O pins is automatically configured as a VREF input. After placing a differential amplifier input signal within a given VREF bank, the same external source must drive all I/O pins configured as a VREF input. IBUF placement restrictions require that any differential amplifier input signals within a bank be of the same standard. How to specify a specific location for the IBUF via the LOC property is described below. Table 19 summarizes the Virtex-E input standards compatibility requirements. An optional delay element is associated with each IBUF. When the IBUF drives a flip-flop within the IOB, the delay element by default activates to ensure a zero hold-time requirement. The NODELAY=TRUE property overrides this default. When the IBUF does not drive a flip-flop within the IOB, the delay element de-activates by default to provide higher performance. To delay the input signal, activate the delay element with the DELAY=TRUE property. Bank 1 GCLK3 Bank 2 Bank 7 Bank 0 GCLK2 GCLK1 Bank 5 Bank 3 Bank 6 Virtex-E Device GCLK0 Bank 4 Figure 38: Virtex-E I/O Banks Rule 1 Xilinx Input Standards Compatibility Requirements Standards with the same input VCCO, output VCCO, and VREF can be placed within the same bank. IBUFG Signals used as high fanout clock inputs to the Virtex-E device should drive a global clock input buffer (IBUFG) via an external input port in order to take advantage of one of the four dedicated global clock distribution networks. The output of the IBUFG should only drive a CLKDLL, Module 2 of 4 34 IBUFG I O x133_03_111699 Figure 39: Virtex-E Global Clock Input Buffer (IBUFG) Symbol The extension to the base name determines which I/O standard is used by the IBUFG. With no extension specified for the generic IBUFG symbol, the assumed standard is LVTTL. The following list details variations of the IBUFG symbol. * * * * * * * * * * * * * * * * * * IBUFG IBUFG_LVCMOS2 IBUFG_PCI33_3 IBUFG_PCI66_3 IBUFG_GTL IBUFG_GTLP IBUFG_HSTL_I IBUFG_HSTL_III IBUFG_HSTL_IV IBUFG_SSTL3_I IBUFG_SSTL3_II IBUFG_SSTL2_I IBUFG_SSTL2_II IBUFG_CTT IBUFG_AGP IBUFG_LVCMOS18 IBUFG_LVDS IBUFG_LVPECL When the IBUFG symbol supports an I/O standard that requires a differential amplifier input, the IBUFG automatically configures as a differential amplifier input buffer. The low-voltage I/O standards with a differential amplifier input require an external reference voltage input VREF. ds022_42_012100 Table 19: CLKDLLHF, or a BUFG symbol. The generic Virtex-E IBUFG symbol appears in Figure 39. The voltage reference signal is "banked" within the Virtex-E device on a half-edge basis such that for all packages there are eight independent VREF banks internally. See Figure 38 for a representation of the Virtex-E I/O banks. Within each bank approximately one of every six I/O pins is automatically configured as a VREF input. After placing a differential amplifier input signal within a given VREF bank, the same external source must drive all I/O pins configured as a VREF input. IBUFG placement restrictions require any differential amplifier input signals within a bank be of the same standard. The LOC property can specify a location for the IBUFG. www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays As an added convenience, the BUFGP can be used to instantiate a high fanout clock input. The BUFGP symbol represents a combination of the LVTTL IBUFG and BUFG symbols, such that the output of the BUFGP can connect directly to the clock pins throughout the design. Unlike previous architectures, the Virtex-E BUFGP symbol can only be placed in a global clock pad location. The LOC property can specify a location for the BUFGP. OBUF An OBUF must drive outputs through an external output port. The generic output buffer (OBUF) symbol appears in Figure 40. OBUF I O x133_04_111699 Figure 40: Virtex-E Output Buffer (OBUF) Symbol The extension to the base name defines which I/O standard the OBUF uses. With no extension specified for the generic OBUF symbol, the assumed standard is slew rate limited LVTTL with 12 mA drive strength. The LVTTL OBUF additionally can support one of two slew rate modes to minimize bus transients. By default, the slew rate for each output buffer is reduced to minimize power bus transients when switching non-critical signals. * * * * * * * * * * * * * * * * * * OBUF_F_24 OBUF_LVCMOS2 OBUF_PCI33_3 OBUF_PCI66_3 OBUF_GTL OBUF_GTLP OBUF_HSTL_I OBUF_HSTL_III OBUF_HSTL_IV OBUF_SSTL3_I OBUF_SSTL3_II OBUF_SSTL2_I OBUF_SSTL2_II OBUF_CTT OBUF_AGP OBUF_LVCMOS18 OBUF_LVDS OBUF_LVPECL The Virtex-E series supports eight banks for the HQ and PQ packages. The CS packages support four VCCO banks. OBUF placement restrictions require that within a given VCCO bank each OBUF share the same output source drive voltage. Input buffers of any type and output buffers that do not require VCCO can be placed within any VCCO bank. Table 20 summarizes the Virtex-E output compatibility requirements. The LOC property can specify a location for the OBUF. LVTTL output buffers have selectable drive strengths. The format for LVTTL OBUF symbol names is as follows. OBUF_<slew_rate>_<drive_strength> <slew_rate> is either F (Fast), or S (Slow) and <drive_strength> is specified in milliamps (2, 4, 6, 8, 12, 16, or 24). Table 20: Rule 1 Only outputs with standards that share compatible VCCO can be used within the same bank. Rule 2 There are no placement restrictions for outputs with standards that do not require a VCCO. VCCO Compatible Standards 3.3 LVTTL, SSTL3_I, SSTL3_II, CTT, AGP, GTL, GTL+, PCI33_3, PCI66_3 2.5 SSTL2_I, SSTL2_II, LVCMOS2, GTL, GTL+ 1.5 HSTL_I, HSTL_III, HSTL_IV, GTL, GTL+ The following list details variations of the OBUF symbol. * * * * * * * * * * * * * * OBUF OBUF_S_2 OBUF_S_4 OBUF_S_6 OBUF_S_8 OBUF_S_12 OBUF_S_16 OBUF_S_24 OBUF_F_2 OBUF_F_4 OBUF_F_6 OBUF_F_8 OBUF_F_12 OBUF_F_16 DS025-2 (v2.3) November 19, 2002 Output Standards Compatibility Requirements OBUFT The generic 3-state output buffer OBUFT, shown in Figure 41, typically implements 3-state outputs or bidirectional I/O. The extension to the base name defines which I/O standard OBUFT uses. With no extension specified for the generic OBUFT symbol, the assumed standard is slew rate limited LVTTL with 12 mA drive strength. www.xilinx.com 1-800-255-7778 Module 2 of 4 35 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays The LVTTL OBUFT additionally can support one of two slew rate modes to minimize bus transients. By default, the slew rate for each output buffer is reduced to minimize power bus transients when switching non-critical signals. LVTTL 3-state output buffers have selectable drive strengths. The format for LVTTL OBUFT symbol names is as follows. OBUFT_<slew_rate>_<drive_strength> <slew_rate> can be either F (Fast), or S (Slow) and <drive_strength> is specified in milliamps (2, 4, 6, 8, 12, 16, or 24). T I OBUFT O x133_05_111699 Figure 41: 3-State Output Buffer Symbol (OBUFT) The following list details variations of the OBUFT symbol. * OBUFT * OBUFT_S_2 * OBUFT_S_4 * OBUFT_S_6 * OBUFT_S_8 * OBUFT_S_12 * OBUFT_S_16 * OBUFT_S_24 * OBUFT_F_2 * OBUFT_F_4 * OBUFT_F_6 * OBUFT_F_8 * OBUFT_F_12 * OBUFT_F_16 * OBUFT_F_24 * OBUFT_LVCMOS2 * OBUFT_PCI33_3 * OBUFT_PCI66_3 * OBUFT_GTL * OBUFT_GTLP * OBUFT_HSTL_I * OBUFT_HSTL_III * OBUFT_HSTL_IV * OBUFT_SSTL3_I * OBUFT_SSTL3_II * OBUFT_SSTL2_I * OBUFT_SSTL2_II * OBUFT_CTT * OBUFT_AGP * OBUFT_LVCMOS18 * OBUFT_LVDS * OBUFT_LVPECL Module 2 of 4 36 The Virtex-E series supports eight banks for the HQ and PQ packages. The CS package supports four VCCO banks. The SelectI/O OBUFT placement restrictions require that within a given VCCO bank each OBUFT share the same output source drive voltage. Input buffers of any type and output buffers that do not require VCCO can be placed within the same VCCO bank. The LOC property can specify a location for the OBUFT. 3-state output buffers and bidirectional buffers can have either a weak pull-up resistor, a weak pull-down resistor, or a weak "keeper" circuit. Control this feature by adding the appropriate symbol to the output net of the OBUFT (PULLUP, PULLDOWN, or KEEPER). The weak "keeper" circuit requires the input buffer within the IOB to sample the I/O signal. So, OBUFTs programmed for an I/O standard that requires a VREF have automatic placement of a VREF in the bank with an OBUFT configured with a weak "keeper" circuit. This restriction does not affect most circuit design as applications using an OBUFT configured with a weak "keeper" typically implement a bidirectional I/O. In this case the IBUF (and the corresponding VREF) are explicitly placed. The LOC property can specify a location for the OBUFT. IOBUF Use the IOBUF symbol for bidirectional signals that require both an input buffer and a 3-state output buffer with an active high 3-state pin. The generic input/output buffer IOBUF appears in Figure 42. The extension to the base name defines which I/O standard the IOBUF uses. With no extension specified for the generic IOBUF symbol, the assumed standard is LVTTL input buffer and slew rate limited LVTTL with 12 mA drive strength for the output buffer. The LVTTL IOBUF additionally can support one of two slew rate modes to minimize bus transients. By default, the slew rate for each output buffer is reduced to minimize power bus transients when switching non-critical signals. LVTTL bidirectional buffers have selectable output drive strengths. The format for LVTTL IOBUF symbol names is as follows. IOBUF_<slew_rate>_<drive_strength> <slew_rate> can be either F (Fast), or S (Slow) and <drive_strength> is specified in milliamps (2, 4, 6, 8, 12, 16, or 24). www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays T The voltage reference signal is "banked" within the Virtex-E device on a half-edge basis such that for all packages there are eight independent VREF banks internally. See Figure 38 on page 34 for a representation of the Virtex-E I/O banks. Within each bank approximately one of every six I/O pins is automatically configured as a VREF input. After placing a differential amplifier input signal within a given VREF bank, the same external source must drive all I/O pins configured as a VREF input. IOBUF I IO O x133_06_111699 Figure 42: Input/Output Buffer Symbol (IOBUF) The following list details variations of the IOBUF symbol. * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * IOBUF IOBUF_S_2 IOBUF_S_4 IOBUF_S_6 IOBUF_S_8 IOBUF_S_12 IOBUF_S_16 IOBUF_S_24 IOBUF_F_2 IOBUF_F_4 IOBUF_F_6 IOBUF_F_8 IOBUF_F_12 IOBUF_F_16 IOBUF_F_24 IOBUF_LVCMOS2 IOBUF_PCI33_3 IOBUF_PCI66_3 IOBUF_GTL IOBUF_GTLP IOBUF_HSTL_I IOBUF_HSTL_III IOBUF_HSTL_IV IOBUF_SSTL3_I IOBUF_SSTL3_II IOBUF_SSTL2_I IOBUF_SSTL2_II IOBUF_CTT IOBUF_AGP IOBUF_LVCMOS18 IOBUF_LVDS IOBUF_LVPECL The Virtex-E series supports eight banks for the HQ and PQ packages. The CS package supports four VCCO banks. Additional restrictions on the Virtex-E SelectI/O IOBUF placement require that within a given VCCO bank each IOBUF must share the same output source drive voltage. Input buffers of any type and output buffers that do not require VCCO can be placed within the same VCCO bank. The LOC property can specify a location for the IOBUF. An optional delay element is associated with the input path in each IOBUF. When the IOBUF drives an input flip-flop within the IOB, the delay element activates by default to ensure a zero hold-time requirement. Override this default with the NODELAY=TRUE property. In the case when the IOBUF does not drive an input flip-flop within the IOB, the delay element de-activates by default to provide higher performance. To delay the input signal, activate the delay element with the DELAY=TRUE property. 3-state output buffers and bidirectional buffers can have either a weak pull-up resistor, a weak pull-down resistor, or a weak "keeper" circuit. Control this feature by adding the appropriate symbol to the output net of the IOBUF (PULLUP, PULLDOWN, or KEEPER). SelectI/O Properties Access to some of the SelectI/O features (for example, location constraints, input delay, output drive strength, and slew rate) is available through properties associated with these features. Input Delay Properties An optional delay element is associated with each IBUF. When the IBUF drives a flip-flop within the IOB, the delay element activates by default to ensure a zero hold-time requirement. Use the NODELAY=TRUE property to override this default. When the IOBUF symbol used supports an I/O standard that requires a differential amplifier input, the IOBUF automatically configures with a differential amplifier input buffer. The low-voltage I/O standards with a differential amplifier input require an external reference voltage input VREF. DS025-2 (v2.3) November 19, 2002 IOBUF placement restrictions require any differential amplifier input signals within a bank be of the same standard. In the case when the IBUF does not drive a flip-flop within the IOB, the delay element by default de-activates to provide higher performance. To delay the input signal, activate the delay element with the DELAY=TRUE property. www.xilinx.com 1-800-255-7778 Module 2 of 4 37 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays IOB Flip-Flop/Latch Property Design Considerations The Virtex-E series I/O block (IOB) includes an optional register on the input path, an optional register on the output path, and an optional register on the 3-state control pin. The design implementation software automatically takes advantage of these registers when the following option for the Map program is specified. Reference Voltage (VREF) Pins map -pr b <filename> Alternatively, the IOB = TRUE property can be placed on a register to force the mapper to place the register in an IOB. Location Constraints Specify the location of each SelectI/O symbol with the location constraint LOC attached to the SelectI/O symbol. The external port identifier indicates the value of the location constrain. The format of the port identifier depends on the package chosen for the specific design. The LOC properties use the following form. Within each VREF bank, any input buffers that require a VREF signal must be of the same type. Output buffers of any type and input buffers can be placed without requiring a reference voltage within the same VREF bank. Many of the low voltage I/O standards supported by SelectI/O devices require a different output drive source voltage (VCCO). As a result each device can often have to support multiple output drive source voltages. LOC=P37 Output Slew Rate Property As mentioned above, a variety of symbol names provide the option of choosing the desired slew rate for the output buffers. In the case of the LVTTL output buffers (OBUF, OBUFT, and IOBUF), slew rate control can be alternatively programed with the SLEW= property. By default, the slew rate for each output buffer is reduced to minimize power bus transients when switching non-critical signals. The SLEW= property has one of the two following values. SLEW=SLOW SLEW=FAST Output Drive Strength Property The desired output drive strength can be additionally specified by choosing the appropriate library symbol. The Xilinx library also provides an alternative method for specifying this feature. For the LVTTL output buffers (OBUF, OBUFT, and IOBUF, the desired drive strength can be specified with the DRIVE= property. This property could have one of the following seven values. DRIVE=4 The voltage reference signal is "banked" within the device on a half-edge basis such that for all packages there are eight independent VREF banks internally. See Figure 38 for a representation of the Virtex-E I/O banks. Within each bank approximately one of every six I/O pins is automatically configured as a VREF input. After placing a differential amplifier input signal within a given VREF bank, the same external source must drive all I/O pins configured as a VREF input. Output Drive Source Voltage (VCCO) Pins LOC=A42 DRIVE=2 Low-voltage I/O standards with a differential amplifier input buffer require an input reference voltage (VREF). Provide the VREF as an external signal to the device. The Virtex-E series supports eight banks for the HQ and PQ packages. The CS package supports four VCCO banks. Output buffers within a given VCCO bank must share the same output drive source voltage. Input buffers for LVTTL, LVCMOS2, LVCMOS18, PCI33_3, and PCI 66_3 use the VCCO voltage for Input VCCO voltage. Transmission Line Effects The delay of an electrical signal along a wire is dominated by the rise and fall times when the signal travels a short distance. Transmission line delays vary with inductance and capacitance, but a well-designed board can experience delays of approximately 180 ps per inch. Transmission line effects, or reflections, typically start at 1.5" for fast (1.5 ns) rise and fall times. Poor (or non-existent) termination or changes in the transmission line impedance cause these reflections and can cause additional delay in longer traces. As system speeds continue to increase, the effect of I/O delays can become a limiting factor and therefore transmission line termination becomes increasingly more important. DRIVE=6 Termination Techniques DRIVE=8 A variety of termination techniques reduce the impact of transmission line effects. DRIVE=12 (Default) DRIVE=16 DRIVE=24 Module 2 of 4 38 The following are output termination techniques: * None * Series * Parallel (Shunt) * Series and Parallel (Series-Shunt) www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Input termination techniques include the following: Table 21: * None * Parallel (Shunt) Guidelines for Maximum Number of Simultaneously Switching Outputs per Power/Ground Pair These termination techniques can be applied in any combination. A generic example of each combination of termination methods appears in Figure 43. Double Parallel Terminated Unterminated VTT Package Standard BGA, FGA LVTTL Slow Slew Rate, 2 mA drive 68 LVTTL Slow Slew Rate, 4 mA drive 41 LVTTL Slow Slew Rate, 6 mA drive 29 LVTTL Slow Slew Rate, 8 mA drive 22 LVTTL Slow Slew Rate, 12 mA drive 17 LVTTL Slow Slew Rate, 16 mA drive 14 LVTTL Slow Slew Rate, 24 mA drive 9 LVTTL Fast Slew Rate, 2 mA drive 40 LVTTL Fast Slew Rate, 4 mA drive 24 LVTTL Fast Slew Rate, 6 mA drive 17 LVTTL Fast Slew Rate, 8 mA drive 13 LVTTL Fast Slew Rate, 12 mA drive 10 LVTTL Fast Slew Rate, 16 mA drive 8 LVTTL Fast Slew Rate, 24 mA drive 5 LVCMOS 10 PCI 8 GTL 4 GTL+ 4 HSTL Class I 18 HSTL Class III 9 HSTL Class IV 5 SSTL2 Class I 15 SSTL2 Class II 10 SSTL3 Class I 11 SSTL3 Class II 7 CTT 14 AGP 9 VTT Z=50 Z=50 VREF Unterminated Output Driving a Parallel Terminated Input Series Terminated Output Driving a Parallel Terminated Input VTT VTT Z=50 Z=50 VREF VREF Series-Parallel Terminated Output Driving a Parallel Terminated Input Series Terminated Output VTT VTT Z=50 Z=50 VREF VREF x133_07_111699 Figure 43: Overview of Standard Input and Output Termination Methods Simultaneous Switching Guidelines Ground bounce can occur with high-speed digital ICs when multiple outputs change states simultaneously, causing undesired transient behavior on an output, or in the internal logic. This problem is also referred to as the Simultaneous Switching Output (SSO) problem. Ground bounce is primarily due to current changes in the combined inductance of ground pins, bond wires, and ground metallization. The IC internal ground level deviates from the external system ground level for a short duration (a few nanoseconds) after multiple outputs change state simultaneously. Ground bounce affects stable Low outputs and all inputs because they interpret the incoming signal by comparing it to the internal ground. If the ground bounce amplitude exceeds the actual instantaneous noise margin, then a non-changing input can be interpreted as a short pulse with a polarity opposite to the ground bounce. Table 21 provides the guidelines for the maximum number of simultaneously switching outputs allowed per output power/ground pair to avoid the effects of ground bounce. Refer to Table 22 for the number of effective output power/ground pairs for each Virtex-E device and package combination. Note: This analysis assumes a 35 pF load for each output. Table 22: Virtex-E Extended Memory Family Equivalent Power/Ground Pairs Pkg/Part XCV405E BG560 FG676 XCV812E 56 56 FG900 DS025-2 (v2.3) November 19, 2002 www.xilinx.com 1-800-255-7778 Module 2 of 4 39 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Application Examples Table 23: Creating a design with the SelectI/O features requires the instantiation of the desired library symbol within the design code. At the board level, designers need to know the termination techniques required for each I/O standard. GTL Voltage Specifications Parameter Min Typ Max - N/A - 0.74 0.8 0.86 VCCO VREF = N x VTT 1 This section describes some common application examples illustrating the termination techniques recommended by each of the standards supported by the SelectI/O features. VTT 1.14 1.2 1.26 VIH = VREF + 0.05 0.79 0.85 - Termination Examples VIL = VREF - 0.05 - 0.75 0.81 Circuit examples involving typical termination techniques for each of the SelectI/O standards follow. For a full range of accepted values for the DC voltage specifications for each standard, refer to the table associated with each figure. VOH - - - VOL - 0.2 0.4 IOH at VOH(mA) - - - The resistors used in each termination technique example and the transmission lines depicted represent board level components and are not meant to represent components on the device. IOLat VOL(mA) at 0.4V 32 - - IOLat VOL(mA) at 0.2V - - 40 GTL Note: N must be greater than or equal to 0.653 and less than or equal to 0.68. GTL+ A sample circuit illustrating a valid termination technique for GTL is shown in Figure 44. Table 23 lists DC voltage specifications. A sample circuit illustrating a valid termination technique for GTL+ appears in Figure 45. DC voltage specifications appear in Table 24. GTL+ VTT = 1.5V VTT = 1.5V GTL VCCO = N/A VTT = 1.2V VTT = 1.2V 50 50 50 VCCO = N/A 50 Z = 50 Z = 50 VREF = 1.0V VREF = 0.8V x133_09_012400 x133_08_111699 Figure 45: Terminated GTL+ Figure 44: Terminated GTL Table 24: GTL+ Voltage Specifications Parameter Min Typ Max - - - VREF = N x VTT1 0.88 1.0 1.12 VTT 1.35 1.5 1.65 VIH = VREF + 0.1 0.98 1.1 - VIL = VREF - 0.1 - 0.9 1.02 VOH - - - VOL 0.3 0.45 0.6 - - - IOLat VOL (mA) at 0.6V 36 - - IOLat VOL (mA) at 0.3V - - 48 VCCO IOH at VOH (mA) Note: N must be greater than or equal to 0.653 and less than or equal to 0.68. Module 2 of 4 40 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays HSTL A sample circuit illustrating a valid termination technique for HSTL_I appears in Figure 46. A sample circuit illustrating a valid termination technique for HSTL_III appears in Figure 47. HSTL Class I VTT= 0.75V VCCO = 1.5V 50 Z = 50 VREF = 0.75V x133_10_111699 Figure 46: Terminated HSTL Class I Table 25: Table 26: Parameter Min Typ Max 1.40 1.50 1.60 VREF (1) - 0.90 - VTT - VCCO - VIH VREF + 0.1 - - VIL - - VREF - 0.1 VOH VCCO - 0.4 - - VOL - - 0.4 IOH at VOH (mA) -8 - - IOLat VOL (mA) 24 - - VCCO HSTL Class I Voltage Specification Parameter Min Typ Max VCCO 1.40 1.50 1.60 VREF 0.68 0.75 0.90 VTT - VCCO x 0.5 - VIH VREF + 0.1 - - VIL - - VREF - 0.1 VOH VCCO - 0.4 - - VOL HSTL Class III Voltage Specification Note: Per EIA/JESD8-6, "The value of VREF is to be selected by the user to provide optimum noise margin in the use conditions specified by the user." A sample circuit illustrating a valid termination technique for HSTL_IV appears in Figure 48. HSTL Class IV VCCO = 1.5V VTT= 1.5V VTT= 1.5V 50 50 Z = 50 VREF = 0.9V 0.4 x133_12_111699 IOH at VOH (mA) -8 - - IOLat VOL (mA) 8 - - Figure 48: Terminated HSTL Class IV Table 27: HSTL Class IV Voltage Specification Parameter Min Typ Max VCCO 1.40 1.50 1.60 VREF - 0.90 - VTT - VCCO - VIH VREF + 0.1 - - VIL - - VREF - 0.1 VOH VCCO - 0.4 - - VOL - - 0.4 IOH at VOH (mA) -8 - - IOLat VOL (mA) 48 - - HSTL Class III VTT= 1.5V VCCO = 1.5V 50 Z = 50 VREF = 0.9V x133_11_111699 Figure 47: Terminated HSTL Class III Note: Per EIA/JESD8-6, "The value of VREF is to be selected by the user to provide optimum noise margin in the use conditions specified by the user. DS025-2 (v2.3) November 19, 2002 www.xilinx.com 1-800-255-7778 Module 2 of 4 41 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays SSTL3_I Table 29: A sample circuit illustrating a valid termination technique for SSTL3_I appears in Figure 49. DC voltage specifications appear in Table 28. SSTL3 Class I VTT= 1.5V VCCO = 3.3V 50 25 Z = 50 VREF = 1.5V x133_13_111699 Figure 49: Terminated SSTL3 Class I Table 28: SSTL3_I Voltage Specifications Parameter Min Typ Max VCCO 3.0 3.3 3.6 VREF = 0.45 x VCCO 1.3 1.5 1.7 VTT = VREF 1.3 1.5 1.7 VIH = VREF + 0.2 1.5 1.7 3.9(1) VIL = VREF - 0.2 -0.3(2) 1.3 1.5 VOH = VREF + 0.6 1.9 - - VOL = VREF - 0.6 - - 1.1 IOH at VOH (mA) -8 - - IOLat VOL (mA) 8 - - SSTL3_II Voltage Specifications Parameter Min Typ Max VCCO 3.0 3.3 3.6 VREF = 0.45 x VCCO 1.3 1.5 1.7 VTT = VREF 1.3 1.5 1.7 VIH = VREF + 0.2 1.5 1.7 3.9(1) VIL= VREF - 0.2 -0.3(2) 1.3 1.5 VOH = VREF + 0.8 2.1 - - VOL= VREF - 0.8 - - 0.9 IOH at VOH (mA) -16 - - IOLat VOL (mA) 16 - - Notes: 1. VIH maximum is VCCO + 0.3 2. VIL minimum does not conform to the formula SSTL2_I A sample circuit illustrating a valid termination technique for SSTL2_I appears in Figure 51. DC voltage specifications appear in Table 30. SSTL2 Class I VTT= 1.25V VCCO = 2.5V 50 25 Z = 50 V REF = 1.25V xap133_15_011000 Figure 51: Terminated SSTL2 Class I Notes: 1. VIH maximum is VCCO + 0.3 2. VIL minimum does not conform to the formula Table 30: SSTL2_I Voltage Specifications Parameter SSTL3_II A sample circuit illustrating a valid termination technique for SSTL3_II appears in Figure 50. DC voltage specifications appear in Table 29. 25 VREF = 0.5 x VCCO Typ Max 2.3 2.5 2.7 1.15 1.25 1.35 N(1) 1.11 1.25 1.39 VIH = VREF + 0.18 1.33 1.43 3.0(2) VTT= 1.5V VTT= 1.5V VIL = VREF - 0.18 -0.3(3) 1.07 1.17 50 VOH = VREF + 0.61 1.76 - - VOL= VREF - 0.61 - - 0.74 IOH at VOH (mA) -7.6 - - IOLat VOL (mA) 7.6 - - SSTL3 Class II VCCO = 3.3V VCCO Min 50 Z = 50 VREF = 1.5V x133_14_111699 Figure 50: Terminated SSTL3 Class II VTT = VREF + Notes: 1. N must be greater than or equal to -0.04 and less than or equal to 0.04. 2. VIH maximum is VCCO + 0.3. 3. VIL minimum does not conform to the formula. Module 2 of 4 42 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays SSTL2_II A sample circuit illustrating a valid termination technique for SSTL2_II appears in Figure 52. DC voltage specifications appear in Table 31. SSTL2 Class II VCCO = 2.5V 25 VTT= 1.25V VTT= 1.25V 50 50 Z = 50 VREF = 1.25V x133_16_111699 Figure 52: Terminated SSTL2 Class II Table 31: SSTL2_II Voltage Specifications Parameter Table 32: CTT Voltage Specifications Parameter Min Typ Max VCCO 2.05(1) 3.3 3.6 VREF 1.35 1.5 1.65 VTT 1.35 1.5 1.65 VIH = VREF + 0.2 1.55 1.7 - VIL = VREF - 0.2 - 1.3 1.45 VOH = VREF + 0.4 1.75 1.9 - VOL= VREF - 0.4 - 1.1 1.25 IOH at VOH (mA) -8 - - IOLat VOL (mA) 8 - - Min Typ Max VCCO 2.3 2.5 2.7 VREF = 0.5 x VCCO 1.15 1.25 1.35 PCI33_3 & PCI66_3 VTT = VREF + N (1) 1.11 1.25 1.39 PCI33_3 or PCI66_3 require no termination. DC voltage specifications appear in Table 33. VIH = VREF + 0.18 1.33 1.43 3.0(2) VIL = VREF - 0.18 -0.3(3) 1.07 1.17 VOH = VREF + 0.8 1.95 - - VOL = VREF - 0.8 - - 0.55 IOH at VOH (mA) -15.2 - IOLat VOL (mA) 15.2 - Notes: 1. Timing delays are calculated based on VCCO min of 3.0V. Table 33: PCI33_3 and PCI66_3 Voltage Specifications Min Typ Max VCCO 3.0 3.3 3.6 - VREF - - - - VTT - - - VIH = 0.5 x VCCO 1.5 1.65 VCCO+ 0.5 VIL = 0.3 x VCCO -0.5 0.99 1.08 VOH = 0.9 x VCCO 2.7 - - VOL= 0.1 x VCCO - - 0.36 IOH at VOH (mA) Note 1 - - IOLat VOL (mA) Note 1 - - Notes: 1. N must be greater than or equal to -0.04 and less than or equal to 0.04. 2. VIH maximum is VCCO + 0.3. 3. VIL minimum does not conform to the formula. CTT A sample circuit illustrating a valid termination technique for CTT appear in Figure 53. DC voltage specifications appear in Table 32. Parameter Note 1: Tested according to the relevant specification. CTT VCCO = 3.3V VTT = 1.5V 50 Z = 50 VREF= 1.5V x133_17_111699 Figure 53: Terminated CTT DS025-2 (v2.3) November 19, 2002 www.xilinx.com 1-800-255-7778 Module 2 of 4 43 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays LVTTL LVCMOS18 LVTTL requires no termination. DC voltage specifications appears in Table 34. LVCMOS18 does not require termination. Table 36 lists DC voltage specifications. Table 34: Table 36: LVTTL Voltage Specifications Parameter Min Typ Max VCCO 3.0 3.3 3.6 VREF - - VTT - VIH LVCMOS18 Voltage Specifications Parameter Min Typ Max VCCO 1.70 1.80 1.90 - VREF - - - - - VTT - - - 2.0 - 3.6 VIH 0.65 x VCCO - 1.95 VIL -0.5 - 0.8 VIL - 0.5 - 0.2 x VCCO VOH 2.4 - - VOH VCCO - 0.4 - - VOL - - 0.4 VOL - - 0.4 IOH at VOH (mA) -24 - - IOH at VOH (mA) -8 - - IOLat VOL (mA) 24 - - IOLat VOL (mA) 8 - - Note: VOLand VOH for lower drive currents sample tested. AGP-2X LVCMOS2 LVCMOS2 requires no termination. DC voltage specifications appear in Table 35. The specification for the AGP-2X standard does not document a recommended termination technique. DC voltage specifications appear in Table 37. Table 35: Table 37: LVCMOS2 Voltage Specifications AGP-2X Voltage Specifications Min Typ Max VCCO 3.0 3.3 3.6 - VREF = N x VCCO(1) 1.17 1.32 1.48 - - VTT - - - 1.7 - 3.6 VIH = VREF + 0.2 1.37 1.52 - VIL -0.5 - 0.7 VIL = VREF - 0.2 - 1.12 1.28 VOH 1.9 - - VOH = 0.9 x VCCO 2.7 3.0 - VOL - - 0.4 VOL = 0.1 x VCCO - 0.33 0.36 IOH at VOH (mA) -12 - - IOH at VOH (mA) Note 2 - - IOLat VOL (mA) 12 - - IOLat VOL (mA) Note 2 - - Parameter Min Typ Max VCCO 2.3 2.5 2.7 VREF - - VTT - VIH Parameter Notes: 1. N must be greater than or equal to 0.39 and less than or equal to 0.41. 2. Tested according to the relevant specification. Module 2 of 4 44 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays LVDS LVPECL Depending on whether the device is transmitting an LVDS signal or receiving an LVDS signal, there are two different circuits used for LVDS termination. A sample circuit illustrating a valid termination technique for transmitting LVDS signals appears in Figure 54. A sample circuit illustrating a valid termination for receiving LVDS signals appears in Figure 55. Table 38 lists DC voltage specifications. Further information on the specific termination resistor packs shown can be found on Table 40. Depending on whether the device is transmitting or receiving an LVPECL signal, two different circuits are used for LVPECL termination. A sample circuit illustrating a valid termination technique for transmitting LVPECL signals appears in Figure 56. A sample circuit illustrating a valid termination for receiving LVPECL signals appears in Figure 57. Table 39 lists DC voltage specifications. Further information on the specific termination resistor packs shown can be found on Table 40. Virtex-E FPGA Q 2.5V RS Q 3.3V Z0 = 50 RS Q RS RDIV 140 Q Z0 = 50 RS Z0 = 50 LVPECL_OUT to LVPECL Receiver 100 DATA Transmit to LVDS Receiver 165 DATA Transmit 1/4 of Bourns Part Number CAT16-PC4F12 Virtex-E FPGA 1/4 of Bourns Part Number CAT16-LV4F12 RDIV 187 Z0 = 50 100 to LVPECL Receiver LVPECL_OUT to LVDS Receiver 165 x133_20_122799 VCCO = 2.5V LVDS Output Figure 56: Transmitting LVPECL Signal Circuit x133_19_122799 Figure 54: Transmitting LVDS Signal Circuit Q Q Z0 = 50 from LVDS Driver VIRTEX-E FPGA LVDS_IN + from LVPECL Driver RT 100 Z0 = 50 + RT 100 Z0 = 50 Q DATA Receive - VIRTEX-E FPGA Z0 = 50 LVPECL_IN DATA Receive - LVPECL_IN x133_21_122799 Q LVDS_IN Figure 57: Receiving LVPECL Signal Circuit x133_29_122799 Figure 55: Receiving LVDS Signal Circuit Table 39: LVPECL Voltage Specifications Parameter Table 38: LVDS Voltage Specifications Parameter Min Typ Max 2.375 2.5 2.625 VICM(2) 0.2 1.25 2.2 VOCM(1) 1.125 1.25 1.375 VIDIFF (1) 0.1 0.35 - VODIFF (1) 0.25 0.35 0.45 VOH(1) 1.25 - - VOL(1) - - 1.25 VCCO Min Typ Max VCCO 3.0 3.3 3.6 VREF - - - VTT - - - VIH 1.49 - 2.72 VIL 0.86 - 2.125 VOH 1.8 - - VOL - - 1.57 Note: For more detailed information, see LVPECL DC Specifications Notes: 1. Measured with a 100 resistor across Q and Q. 2. Measured with a differential input voltage = +/- 350 mV. DS025-2 (v2.3) November 19, 2002 www.xilinx.com 1-800-255-7778 Module 2 of 4 45 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Termination Resistor Packs HDL Instantiation Resistor packs are available with the values and the configuration required for LVDS and LVPECL termination from Bourns, Inc., as listed in Table. For pricing and availability, please contact Bourns directly at www.bourns.com. Only one global clock input buffer is required to be instantiated in the design and placed on the correct GCLKPAD location. The N-side of the buffer is reserved and no other IOB is allowed to be placed on this location. I/O Standard Term. for: Pairs/ Pack Pins CAT16-LV2F6 LVDS Driver 2 8 In the physical device, a configuration option is enabled that routes the pad wire to the differential input buffer located in the GCLKIOB. The output of this buffer then drives the output of the GCLKIOB cell. In EPIC it appears that the second buffer is unused. Any attempt to use this location for another purpose leads to a DRC error in the software. CAT16-LV4F12 LVDS Driver 4 16 VHDL Instantiation CAT16-PC2F6 LVPECL Driver 2 8 CAT16-PC4F12 LVPECL Driver 4 16 CAT16-PT2F2 LVDS/LVPECL Receiver 2 8 CAT16-PT4F4 LVDS/LVPECL Receiver 4 16 Table 40: Bourns LVDS/LVPECL Resistor Packs Part Number gclk0_p : IBUFG_LVDS port map (I=>clk_external, O=>clk_internal); Verilog Instantiation IBUFG_LVDS gclk0_p (.I(clk_external), .O(clk_internal)); Location Constraints LVDS Design Guide The SelectI/O library elements have been expanded for Virtex-E devices to include new LVDS variants. At this time all of the cells might not be included in the Synthesis libraries. The 2.1i-Service Pack 2 update for Alliance and Foundation software includes these cells in the VHDL and Verilog libraries. It is necessary to combine these cells to create the P-side (positive) and N-side (negative) as described in the input, output, 3-state and bidirectional sections. IBUF_LVDS I OBUF_LVDS O I IOBUF_LVDS T O I IBUFG_LVDS I OBUFT_LVDS T O I IO O All LVDS buffers must be explicitly placed on a device. For the global clock input buffers this can be done with the following constraint in the UCF or NCF file. NET clk_external LOC = GCLKPAD3; GCLKPAD3 can also be replaced with the package pin name, such as D17 for the BG432 package. Optional N-Side Some designers might prefer to also instantiate the N-side buffer for the global clock buffer. This allows the top-level net list to include net connections for both PCB layout and system-level integration. In this case, only the output P-side IBUFG connection has a net connected to it. Since the N-side IBUFG does not have a connection in the EDIF net list, it is trimmed from the design in MAP. O VHDL Instantiation x133_22_122299 gclk0_p : IBUFG_LVDS port map (I=>clk_p_external, O=>clk_internal); Figure 58: LVDS Elements gclk0_n : IBUFG_LVDS port map (I=>clk_n_external, O=>clk_internal); Creating LVDS Global Clock Input Buffers The global clock input buffer can be combined with the adjacent IOB to form an LVDS clock input buffer. The P-side resides in the GCLKPAD location and the N-side resides in the adjacent IO_LVDS_DLL site. Table 41: Global Clock Input Buffer Pair Locations Pair 3 Pair 2 Pair 2 Pair 0 Pkg P N P N P N P N BG560 A17 C18 D17 E17 AJ17 AM18 AL17 AM17 FG676 E13 B13 C13 F14 AB13 AF13 AA14 AC14 FG900 C15 A15 E15 E16 AK16 AH16 AJ16 AF16 Verilog Instantiation IBUFG_LVDS gclk0_p (.I(clk_p_external), .O(clk_internal)); IBUFG_LVDS gclk0_n (.I(clk_n_external), .O(clk_internal)); Location Constraints All LVDS buffers must be explicitly placed on a device. For the global clock input buffers this can be done with the following constraint in the UCF or NCF file. NET clk_p_external LOC = GCLKPAD3; NET clk_n_external LOC = C17; Module 2 of 4 46 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays GCLKPAD3 can also be replaced with the package pin name, such as D17 for the BG432 package. Creating LVDS Input Buffers An LVDS input buffer can be placed in a wide number of IOB locations. The exact location is dependent on the package that is used. The Virtex-E package information lists the possible locations as IO_L#P for the P-side and IO_L#N for the N-side where # is the pair number. HDL Instantiation Only one input buffer is required to be instantiated in the design and placed on the correct IO_L#P location. The N-side of the buffer is reserved and no other IOB is allowed to be placed on this location. In the physical device, a configuration option is enabled that routes the pad wire from the IO_L#N IOB to the differential input buffer located in the IO_L#P IOB. The output of this buffer then drives the output of the IO_L#P cell or the input register in the IO_L#P IOB. In EPIC it appears that the second buffer is unused. Any attempt to use this location for another purpose leads to a DRC error in the software. VHDL Instantiation data0_p : IBUF_LVDS port map (I=>data(0), O=>data_int(0)); Location Constraints All LVDS buffers must be explicitly placed on a device. For the global clock input buffers this can be done with the following constraint in the UCF or NCF file. NET data_p<0> LOC = D28; # IO_L0P NET data_n<0> LOC = B29; # IO_L0N Adding an Input Register All LVDS buffers can have an input register in the IOB. The input register is in the P-side IOB only. All the normal IOB register options are available (FD, FDE, FDC, FDCE, FDP, FDPE, FDR, FDRE, FDS, FDSE, LD, LDE, LDC, LDCE, LDP, LDPE). The register elements can be inferred or explicitly instantiated in the HDL code. The register elements can be packed in the IOB using the IOB property to TRUE on the register or by using "map -pr [i|o|b]", where "i" is inputs only, "o" is outputs only, and "b" is both inputs and outputs. To improve design coding times VHDL and Verilog synthesis macro libraries available to explicitly create these structures. The input library macros are listed in Table 42. The I and IB inputs to the macros are the external net connections. Table 42: Verilog Instantiation Input Library Macros Name IBUF_LVDS data0_p (.I(data[0]), .O(data_int[0])); Inputs Outputs I, IB, C Q IBUFDS_FDE_LVDS I, IB, CE, C Q IBUFDS_FDC_LVDS I, IB, C, CLR Q I, IB, CE, C, CLR Q I, IB, C, PRE Q I, IB, CE, C, PRE Q I, IB, C, R Q I, IB, CE, C, R Q I, IB, C, S Q I, IB, CE, C, S Q I, IB, G Q IBUFDS_LDE_LVDS I, IB, GE, G Q IBUFDS_LDC_LVDS I, IB, G, CLR Q I, IB, GE, G, CLR Q I, IB, G, PRE Q I, IB, GE, G, PRE Q IBUFDS_FD_LVDS Location Constraints All LVDS buffers must be explicitly placed on a device. For the input buffers this can be done with the following constraint in the UCF or NCF file. NET data<0> LOC = D28; # IO_L0P IBUFDS_FDCE_LVDS IBUFDS_FDP_LVDS Optional N-side IBUFDS_FDPE_LVDS Some designers might prefer to also instantiate the N-side buffer for the input buffer. This allows the top-level net list to include net connections for both PCB layout and system-level integration. In this case, only the output P-side IBUF connection has a net connected to it. Since the N-side IBUF does not have a connection in the EDIF net list, it is trimmed from the design in MAP. VHDL Instantiation IBUFDS_FDR_LVDS IBUFDS_FDRE_LVDS IBUFDS_FDS_LVDS IBUFDS_FDSE_LVDS IBUFDS_LD_LVDS data0_p : IBUF_LVDS port map (I=>data_p(0), O=>data_int(0)); data0_n : IBUF_LVDS port map (I=>data_n(0), O=>open); IBUFDS_LDCE_LVDS Verilog Instantiation IBUFDS_LDP_LVDS IBUF_LVDS data0_p (.I(data_p[0]), .O(data_int[0])); IBUFDS_LDPE_LVDS IBUF_LVDS data0_n (.I(data_n[0]), .O()); DS025-2 (v2.3) November 19, 2002 www.xilinx.com 1-800-255-7778 Module 2 of 4 47 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Creating LVDS Output Buffers LVDS output buffer can be placed in wide number of IOB locations. The exact location are dependent on the package that is used. The Virtex-E package information lists the possible locations as IO_L#P for the P-side and IO_L#N for the N-side where # is the pair number. HDL Instantiation Both output buffers are required to be instantiated in the design and placed on the correct IO_L#P and IO_L#N locations. The IOB must have the same net source the following pins, clock (C), set/reset (SR), output (O), output clock enable (OCE). In addition, the output (O) pins must be inverted with respect to each other, and if output registers are used, the INIT states must be opposite values (one HIGH and one LOW). Failure to follow these rules leads to DRC errors in software. VHDL Instantiation data0_p : OBUF_LVDS port map (I=>data_int(0), O=>data_p(0)); data0_inv: INV (I=>data_int(0), port map O=>data_n_int(0)); data0_n : OBUF_LVDS port map (I=>data_n_int(0), O=>data_n(0)); Verilog Instantiation OBUF_LVDS data0_p .O(data_p[0])); Adding an Output Register All LVDS buffers can have an output register in the IOB. The output registers must be in both the P-side and N-side IOBs. All the normal IOB register options are available (FD, FDE, FDC, FDCE, FDP, FDPE, FDR, FDRE, FDS, FDSE, LD, LDE, LDC, LDCE, LDP, LDPE). The register elements can be inferred or explicitly instantiated in the HDL code. Special care must be taken to insure that the D pins of the registers are inverted and that the INIT states of the registers are opposite. The clock pin (C), clock enable (CE) and set/reset (CLR/PRE or S/R) pins must connect to the same source. Failure to do this leads to a DRC error in the software. The register elements can be packed in the IOB using the IOB property to TRUE on the register or by using the "map -pr [i|o|b]" where "i" is inputs only, "o" is outputs only and "b" is both inputs and outputs. To improve design coding times VHDL and Verilog synthesis macro libraries have been developed to explicitly create these structures. The output library macros are listed in Table 43. The O and OB inputs to the macros are the external net connections. Table 43: (.I(data_int[0]), Output Library Macros Name Inputs Outputs D, C O, OB OBUFDS_FDE_LVDS DD, CE, C O, OB OBUFDS_FDC_LVDS D, C, CLR O, OB D, CE, C, CLR O, OB D, C, PRE O, OB D, CE, C, PRE O, OB D, C, R O, OB D, CE, C, R O, OB D, C, S O, OB D, CE, C, S O, OB D, G O, OB OBUFDS_LDE_LVDS D, GE, G O, OB OBUFDS_LDC_LVDS D, G, CLR O, OB D, GE, G, CLR O, OB D, G, PRE O, OB D, GE, G, PRE O, OB OBUFDS_FD_LVDS INV data0_inv (.I(data_int[0], .O(data_n_int[0]); OBUF_LVDS data0_n .O(data_n[0])); some point in the product lifetime, then only the common pairs for all packages should be used. (.I(data_n_int[0]), OBUFDS_FDCE_LVDS Location Constraints All LVDS buffers must be explicitly placed on a device. For the output buffers this can be done with the following constraint in the UCF or NCF file. NET data_p<0> LOC = D28; # IO_L0P OBUFDS_FDP_LVDS OBUFDS_FDPE_LVDS OBUFDS_FDR_LVDS OBUFDS_FDRE_LVDS NET data_n<0> LOC = B29; # IO_L0N Synchronous vs. Asynchronous Outputs OBUFDS_FDS_LVDS If the outputs are synchronous (registered in the IOB), then any IO_L#P|N pair can be used. If the outputs are asynchronous (no output register), then they must use one of the pairs that are part of the same IOB group at the end of a ROW or at the top/bottom of a COLUMN in the device. OBUFDS_FDSE_LVDS The LVDS pairs that can be used as asynchronous outputs are listed in the Virtex-E pinout tables. Some pairs are marked as asynchronous-capable for all devices in that package, and others are marked as available only for that device in the package. If the device size might change at Module 2 of 4 48 OBUFDS_LD_LVDS OBUFDS_LDCE_LVDS OBUFDS_LDP_LVDS OBUFDS_LDPE_LVDS www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Creating LVDS Output 3-State Buffers LVDS output 3-state buffers can be placed in a wide number of IOB locations. The exact locations are dependent on the package used. The Virtex-E package information lists the possible locations as IO_L#P for the P-side and IO_L#N for the N-side, where # is the pair number. HDL Instantiation Adding Output and 3-State Registers Both output 3-state buffers are required to be instantiated in the design and placed on the correct IO_L#P and IO_L#N locations. The IOB must have the same net source the following pins, clock (C), set/reset (SR), 3-state (T), 3-state clock enable (TCE), output (O), output clock enable (OCE). In addition, the output (O) pins must be inverted with respect to each other, and if output registers are used, the INIT states must be opposite values (one High and one Low). If 3-state registers are used, they must be initialized to the same state. Failure to follow these rules leads to DRC errors in the software. VHDL Instantiation data0_p: OBUFT_LVDS port map (I=>data_int(0), T=>data_tri, O=>data_p(0)); All LVDS buffers can have an output register in the IOB. The output registers must be in both the P-side and N-side IOBs. All the normal IOB register options are available (FD, FDE, FDC, FDCE, FDP, FDPE, FDR, FDRE, FDS, FDSE, LD, LDE, LDC, LDCE, LDP, LDPE). The register elements can be inferred or explicitly instantiated in the HDL code. Special care must be taken to insure that the D pins of the registers are inverted and that the INIT states of the registers are opposite. The 3-state (T), 3-state clock enable (CE), clock pin (C), output clock enable (CE) and set/reset (CLR/PRE or S/R) pins must connect to the same source. Failure to do this leads to a DRC error in the software. The register elements can be packed in the IOB using the IOB property to TRUE on the register or by using the "map -pr [i|o|b]" where "i" is inputs only, "o" is outputs only and "b" is both inputs and outputs. data0_inv: INV port map (I=>data_int(0), O=>data_n_int(0)); data0_n: OBUFT_LVDS port map (I=>data_n_int(0), T=>data_tri, O=>data_n(0)); Verilog Instantiation OBUFT_LVDS data0_p (.I(data_int[0]), .T(data_tri), .O(data_p[0])); INV data0_inv (.I(data_int[0], .O(data_n_int[0]); OBUFT_LVDS data0_n (.I(data_n_int[0]), .T(data_tri), .O(data_n[0])); Location Constraints All LVDS buffers must be explicitly placed on a device. For the output buffers this can be done with the following constraint in the UCF or NCF file. NET data_p<0> LOC = D28; # IO_L0P NET data_n<0> LOC = B29; # IO_L0N Synchronous vs. Asynchronous 3-State Outputs If the outputs are synchronous (registered in the IOB), then any IO_L#P|N pair can be used. If the outputs are asynchronous (no output register), then they must use one of the pairs that are part of the same IOB group at the end of a ROW or at the top/bottom of a COLUMN in the device. This applies for either the 3-state pin or the data out pin. DS025-2 (v2.3) November 19, 2002 LVDS pairs that can be used as asynchronous outputs are listed in the Virtex-E pinout tables. Some pairs are marked as "asynchronous capable" for all devices in that package, and others are marked as available only for that device in the package. If the device size might be changed at some point in the product lifetime, then only the common pairs for all packages should be used. To improve design coding times VHDL and Verilog synthesis macro libraries have been developed to explicitly create these structures. The input library macros are listed below. The 3-state is configured to be 3-stated at GSR and when the PRE,CLR,S or R is asserted and shares it's clock enable with the output register. If this is not desirable, the library can be updated by the user for the desired functionality. The O and OB inputs to the macros are the external net connections. Creating LVDS Bidirectional Buffer LVDS bidirectional buffers can be placed in a wide number of IOB locations. The exact locations are dependent on the package used. The Virtex-E package information lists the possible locations as IO_L#P for the P-side and IO_L#N for the N-side, where # is the pair number. HDL Instantiation Both bidirectional buffers are required to be instantiated in the design and placed on the correct IO_L#P and IO_L#N locations. The IOB must have the same net source the following pins, clock (C), set/reset (SR), 3-state (T), 3-state clock enable (TCE), output (O), output clock enable (OCE). In addition, the output (O) pins must be inverted with respect to each other, and if output registers are used, the INIT states must be opposite values (one HIGH and one LOW). If 3-state registers are used, they must be initialized to the same state. Failure to follow these rules leads to DRC errors in the software. www.xilinx.com 1-800-255-7778 Module 2 of 4 49 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays The LVDS pairs that can be used as asynchronous bidirectional buffers are listed in the Virtex-E pinout tables. Some pairs are marked as asynchronous capable for all devices in that package, and others are marked as available only for that device in the package. If the device size might change at some point in the product's lifetime, then only the common pairs for all packages should be used. VHDL Instantiation data0_p: IOBUF_LVDS port map (I=>data_out(0), T=>data_tri, IO=>data_p(0), O=>data_int(0)); data0_inv: INV (I=>data_out(0), port map O=>data_n_out(0)); data0_n : IOBUF_LVDS port map (I=>data_n_out(0), T=>data_tri, IO=>data_n(0), O=>open); Adding Output and 3-State Registers Verilog Instantiation IOBUF_LVDS data0_p(.I(data_out[0]), .T(data_tri), .IO(data_p[0]), .O(data_int[0]); INV data0_inv (.I(data_out[0], .O(data_n_out[0]); IOBUF_LVDS data0_n(.I(data_n_out[0]),.T(data_tri),. IO(data_n[0]).O()); Location Constraints All LVDS buffers must be explicitly placed on a device. For the output buffers this can be done with the following constraint in the UCF or NCF file. NET data_p<0> LOC = D28; # IO_L0P NET data_n<0> LOC = B29; # IO_L0N Synchronous vs. Asynchronous Bidirectional Buffers If the output side of the bidirectional buffers are synchronous (registered in the IOB), then any IO_L#P|N pair can be used. If the output side of the bidirectional buffers are asynchronous (no output register), then they must use one of the pairs that is a part of the asynchronous LVDS IOB group. This applies for either the 3-state pin or the data out pin. Table 44: All LVDS buffers can have output and input registers in the IOB. The output registers must be in both the P-side and N-side IOBs, the input register is only in the P-side. All the normal IOB register options are available (FD, FDE, FDC, FDCE, FDP, FDPE, FDR, FDRE, FDS, FDSE, LD, LDE, LDC, LDCE, LDP, LDPE). The register elements can be inferred or explicitly instantiated in the HDL code. Special care must be taken to insure that the D pins of the registers are inverted and that the INIT states of the registers are opposite. The 3-state (T), 3-state clock enable (CE), clock pin (C), output clock enable (CE), and set/reset (CLR/PRE or S/R) pins must connect to the same source. Failure to do this leads to a DRC error in the software. The register elements can be packed in the IOB using the IOB property to TRUE on the register or by using the "map -pr [i|o|b]", where "i" is inputs only, "o" is outputs only, and "b" is both inputs and outputs. To improve design coding times, VHDL and Verilog synthesis macro libraries have been developed to explicitly create these structures. The bidirectional I/O library macros are listed in Table 44. The 3-state is configured to be 3-stated at GSR and when the PRE, CLR, S, or R is asserted and shares its clock enable with the output and input register. If this is not desirable, then the library can be updated with the desired functionality by the user. The I/O and IOB inputs to the macros are the external net connections. Bidirectional I/O Library Macros Name Inputs Bidirectional Outputs D, T, C IO, IOB Q IOBUFDS_FDE_LVDS D, T, CE, C IO, IOB Q IOBUFDS_FDC_LVDS D, T, C, CLR IO, IOB Q D, T, CE, C, CLR IO, IOB Q D, T, C, PRE IO, IOB Q D, T, CE, C, PRE IO, IOB Q D, T, C, R IO, IOB Q D, T, CE, C, R IO, IOB Q D, T, C, S IO, IOB Q D, T, CE, C, S IO, IOB Q IOBUFDS_FD_LVDS IOBUFDS_FDCE_LVDS IOBUFDS_FDP_LVDS IOBUFDS_FDPE_LVDS IOBUFDS_FDR_LVDS IOBUFDS_FDRE_LVDS IOBUFDS_FDS_LVDS IOBUFDS_FDSE_LVDS Module 2 of 4 50 www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 R Table 44: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Bidirectional I/O Library Macros (Continued) Name Inputs Bidirectional Outputs D, T, G IO, IOB Q IOBUFDS_LDE_LVDS D, T, GE, G IO, IOB Q IOBUFDS_LDC_LVDS D, T, G, CLR IO, IOB Q D, T, GE, G, CLR IO, IOB Q D, T, G, PRE IO, IOB Q D, T, GE, G, PRE IO, IOB Q IOBUFDS_LD_LVDS IOBUFDS_LDCE_LVDS IOBUFDS_LDP_LVDS IOBUFDS_LDPE_LVDS Revision History The following table shows the revision history for this document. Date Version 03/23/00 1.0 Initial Xilinx release. 08/01/00 1.1 Accumulated edits and fixes. Upgrade to Preliminary. Preview -8 numbers added. Reformatted to adhere to corporate documentation style guidelines. Minor changes in BG560 pin-out table. 09/19/00 1.2 * 1.3 * * 11/20/00 Revision * * * * In Table 3 (Module 4), FG676 Fine-Pitch BGA -- XCV405E, the following pins are no longer labeled as VREF: B7, G16, G26, W26, AF20, AF8, Y1, H1. Min values added to Virtex-E Electrical Characteristics tables. Updated speed grade -8 numbers in Virtex-E Electrical Characteristics tables (Module 3). Updated minimums in Table 11 (Module 2), and added notes to Table 12 (Module 2). Added to note 2 of Absolute Maximum Ratings (Module 3). Changed all minimum hold times to -0.4 for Global Clock Set-Up and Hold for LVTTL Standard, with DLL (Module 3). Revised maximum TDLLPW in -6 speed grade for DLL Timing Parameters (Module 3). 1.4 * 04/19/01 1.5 * * * In Table 4, FG676 Fine-Pitch BGA -- XCV405E, pin B19 is no longer labeled as VREF, and pin G16 is now labeled as VREF. Updated values in Virtex-E Switching Characteristics tables. Converted data sheet to modularized format. Modified Figure 30, which shows "DLL Generation of 4x Clock in Virtex-E Devices." 07/23/01 1.6 * Made minor edits to text under Configuration. 11/16/01 2.0 * 07/17/02 2.1 * Added warning under Configuration section that attempting to load an incorrect bitstream causes configuration to fail and can damage the device. Data sheet designation upgraded from Preliminary to Production. 09/10/02 2.2 * 11/19/02 2.3 * * 04/02/01 DS025-2 (v2.3) November 19, 2002 Added clarifications in the Input/Output Block, Configuration, Boundary-Scan Mode, and Block SelectRAM+ Memory sections. Revised Figure 18, Table 11, and Table 36. Added clarification in the Boundary Scan section. Removed last sentence regarding deactivation of duty-cycle correction in Duty Cycle Correction Property section. www.xilinx.com 1-800-255-7778 Module 2 of 4 51 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Virtex-E Extended Memory Data Sheet The Virtex-E Extended Memory Data Sheet contains the following modules: * DS025-1, Virtex-E 1.8V Extended Memory FPGAs: * Introduction and Ordering Information (Module 1) * DS025-2, Virtex-E 1.8V Extended Memory FPGAs: Functional Description (Module 2) Module 2 of 4 52 DS025-3, Virtex-E 1.8V Extended Memory FPGAs: DC and Switching Characteristics (Module 3) * DS025-4, Virtex-E 1.8V Extended Memory FPGAs: Pinout Tables (Module 4) www.xilinx.com 1-800-255-7778 DS025-2 (v2.3) November 19, 2002 0 VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-3 (v2.3.2) March 14, 2003 0 0 Production Product Specification Virtex-E Extended Memory Electrical Characteristics Definition of Terms Electrical and switching characteristics are specified on a per-speed-grade basis and can be designated as Advance, Preliminary, or Production. Each designation is defined as follows: Advance: These speed files are based on simulations only and are typically available soon after device design specifications are frozen. Although speed grades with this designation are considered relatively stable and conservative, some under-reporting might still occur. Preliminary: These speed files are based on complete ES (engineering sample) silicon characterization. Devices and speed grades with this designation are intended to give a better indication of the expected performance of production silicon. The probability of under-reporting delays is greatly reduced as compared to Advance data. Production: These speed files are released once enough production silicon of a particular device family member has been characterized to provide full correlation between speed files and devices over numerous production lots. There is no under-reporting of delays, and customers receive formal notification of any subsequent changes. Typ- ically, the slowest speed grades transition to Production before faster speed grades. All specifications are representative of worst-case supply voltage and junction temperature conditions. The parameters included are common to popular designs and typical applications. Contact the factory for design considerations requiring more detailed information. Table 1 correlates the current status of each Virtex-E Extended Memory device with a corresponding speed file designation. Table 1: Virtex-E Extended Memory Device Speed Grade Designations Speed Grade Designations Device Advance Preliminary Production XCV405E -8, -7, -6 XCV812E -8, -7, -6 All specifications are subject to change without notice. DC Characteristics Absolute Maximum Ratings Description(1) Symbol Units Internal Supply voltage relative to GND -0.5 to 2.0 V VCCO Supply voltage relative to GND -0.5 to 4.0 V VREF Input Reference Voltage -0.5 to 4.0 V VIN (3) Input voltage relative to GND -0.5 to VCCO +0.5 V -0.5 to 4.0 V 50 ms -65 to +150 C +125 C VCCINT VTS Voltage applied to 3-state output VCC Longest Supply Voltage Rise Time from 0 V - 1.71 V TSTG Storage temperature (ambient) TJ Junction temperature (2) Plastic packages Notes: 1. Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time can affect device reliability. 2. For soldering guidelines and thermal considerations, see the device packaging information on www.xilinx.com. 3. Inputs configured as PCI are fully PCI compliant. This statement takes precedence over any specification that would imply that the device is not PCI compliant. (c) 2000-2003 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm. All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice. DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 1 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Recommended Operating Conditions Symbol VCCINT VCCO Description Min Max Units Internal Supply voltage relative to GND, TJ = 0 C to +85C Commercial 1.8 - 5% 1.8 + 5% V Internal Supply voltage relative to GND, TJ = -40C to +100C Industrial 1.8 - 5% 1.8 + 5% V Supply voltage relative to GND, TJ = 0 C to +85C Commercial 1.2 3.6 V Supply voltage relative to GND, TJ = -40C to +100C Industrial 1.2 3.6 V 250 ns Input signal transition time TIN DC Characteristics Over Recommended Operating Conditions Description(1) Symbol VDRINT (below which configuration data might be lost) ICCINTQ IL (below which configuration data might be lost) Data Retention VCCO Voltage VDRIO ICCOQ Data Retention VCCINT Voltage Quiescent VCCINT supply current1 Quiescent VCCO supply current1 Input or output leakage current Device Min All 1.5 V All 1.2 V Input capacitance (sample tested) IRPU Pad pull-up (when selected) @ Vin = 0 V, VCCO = 3.3 V (sample tested) IRPD Pad pull-down (when selected) @ Vin = 3.6 V (sample tested) BGA, PQ, HQ, packages Units XCV405E 400 mA XCV812E 500 mA XCV405E 2 mA XCV812E 2 mA +10 A 8 pF Note 2 0.25 mA Note 2 0.25 mA All CIN Max -10 All All Notes: 1. With no output current loads, no active input pull-up resistors, all I/O pins 3-stated and floating. 2. Internal pull-up and pull-down resistors guarantee valid logic levels at unconnected input pins. These pull-up and pull-down resistors do not guarantee valid logic levels when input pins are connected to other circuits. Power-On Power Supply Requirements Xilinx FPGAs require a certain amount of supply current during power-on to insure proper device operation. The actual current consumed depends on the power-on ramp rate of the power supply. This is the time required to reach the nominal power supply voltage of the device1 from 0 V. The fastest ramp rate is 0 V to nominal voltage in 2 ms and the slowest allowed ramp rate is 0 V to nominal voltage in 50 ms. For more details on power supply requirements, see XAPP158 on www.xilinx.com. Product (Commercial Grade) Description(2) Current Requirement(3) XCV50E - XCV600E Minimum required current supply 500 mA XCV812E - XCV2000E Minimum required current supply 1A XCV2600E - XCV3200E Minimum required current supply 1.2 A Virtex-E Family, Industrial Grade Minimum required current supply 2A Notes: 1. Ramp rate used for this specification is from 0 - 1.8 V DC. Peak current occurs on or near the internal power-on reset threshold and lasts for less than 3 ms. 2. Devices are guaranteed to initialize properly with the minimum current available from the power supply as noted above. 3. Larger currents might result if ramp rates are forced to be faster. Module 3 of 4 2 www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays DC Input and Output Levels Values for VIL and VIH are recommended input voltages. Values for IOL and IOH are guaranteed over the recommended operating conditions at the VOL and VOH test points. Only selected standards are tested. These are chosen to ensure that all standards meet their specifications. The selected standards are tested at minimum VCCO with the respective VOL and VOH voltage levels shown. Other standards are sample tested. VIH VIL Input/Output VOL VOH IOL IOH V, min V, max V, min V, max V, Max V, Min mA mA LVTTL(1) - 0.5 0.8 2.0 3.6 0.4 2.4 24 - 24 LVCMOS2 - 0.5 0.7 1.7 2.7 0.4 1.9 12 - 12 LVCMOS18 - 0.5 20% VCCO 70% VCCO 1.95 0.4 VCCO - 0.4 8 -8 PCI, 3.3 V - 0.5 30% VCCO 50% VCCO VCCO + 0.5 10% VCCO 90% VCCO Note 2 Note 2 GTL - 0.5 VREF - 0.05 VREF + 0.05 3.6 0.4 n/a 40 n/a GTL+ - 0.5 VREF - 0.1 VREF + 0.1 3.6 0.6 n/a 36 n/a HSTL I(3) - 0.5 VREF - 0.1 VREF + 0.1 3.6 0.4 VCCO - 0.4 8 -8 HSTL III - 0.5 VREF - 0.1 VREF + 0.1 3.6 0.4 VCCO - 0.4 24 -8 HSTL IV - 0.5 VREF - 0.1 VREF + 0.1 3.6 0.4 VCCO - 0.4 48 -8 SSTL3 I - 0.5 VREF - 0.2 VREF + 0.2 3.6 VREF - 0.6 VREF + 0.6 8 -8 SSTL3 II - 0.5 VREF - 0.2 VREF + 0.2 3.6 VREF - 0.8 VREF + 0.8 16 -16 SSTL2 I - 0.5 VREF - 0.2 VREF + 0.2 3.6 VREF - 0.61 VREF + 0.61 7.6 -7.6 SSTL2 II - 0.5 VREF - 0.2 VREF + 0.2 3.6 VREF - 0.80 VREF + 0.80 15.2 -15.2 CTT - 0.5 VREF - 0.2 VREF + 0.2 3.6 VREF - 0.4 VREF + 0.4 8 -8 AGP - 0.5 VREF - 0.2 VREF + 0.2 3.6 10% VCCO 90% VCCO Note 2 Note 2 Standard Notes: 1. VOL and VOH for lower drive currents are sample tested. 2. Tested according to the relevant specifications. 3. DC input and output levels for HSTL18 (HSTL I/O standard with VCCO of 1.8 V) are provided in an HSTL white paper on www.xilinx.com. DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 3 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays LVDS DC Specifications DC Parameter Symbol Supply Voltage Conditions VCCO Min Typ Max Units 2.375 2.5 2.625 V Output High Voltage for Q and Q VOH RT = 100 across Q and Q signals 1.25 1.425 1.6 V Output Low Voltage for Q and Q VOL RT = 100 across Q and Q signals 0.9 1.075 1.25 V VODIFF RT = 100 across Q and Q signals 250 350 450 mV Output Common-Mode Voltage VOCM RT = 100 across Q and Q signals 1.125 1.25 1.375 V Differential Input Voltage (Q - Q), VIDIFF Common-mode input voltage = 1.25 V 100 350 NA mV VICM Differential input voltage = 350 mV 0.2 1.25 2.2 V Differential Output Voltage (Q - Q), Q = High (Q - Q), Q = High Q = High (Q - Q), Q = High Input Common-Mode Voltage Notes: 1. Refer to the Design Consideration section for termination schematics. LVPECL DC Specifications These values are valid at the output of the source termination pack shown under LVPECL, with a 100 differential load only. The VOH levels are 200 mV below standard LVPECL levels and are compatible with devices tolerant of lower common-mode ranges. The following table summarizes the DC output specifications of LVPECL. DC Parameter Min VCCO Min 3.0 Max Min 3.3 Max 3.6 Units V VOH 1.8 2.11 1.92 2.28 2.13 2.41 V VOL 0.96 1.27 1.06 1.43 1.30 1.57 V VIH 1.49 2.72 1.49 2.72 1.49 2.72 V VIL 0.86 2.125 0.86 2.125 0.86 2.125 V 0.3 - 0.3 - 0.3 - V Differential Input Voltage Module 3 of 4 4 Max www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Virtex-E Switching Characteristics All devices are 100% functionally tested. Internal timing parameters are derived from measuring internal test patterns. Listed below are representative values. For more specific, more precise, and worst-case guaranteed data, use the values reported by the static timing analyzer (TRCE in the Xilinx Development System) and back-annotated to the simulation net list. All timing parameters assume worst-case operating conditions (supply voltage and junction temperature). Values apply to all Virtex-E devices unless otherwise noted. IOB Input Switching Characteristics Input delays associated with the pad are specified for LVTTL levels. For other standards, adjust the delays with the values shown in ``IOB Input Switching Characteristics Standard Adjustments'' on page 6. Speed Grade(2) Description(1) Symbol Device Min -8 -7 -6 Units Pad to I output, no delay TIOPI All 0.43 0.8 0.8 0.8 ns, max XCV405E 0.51 1.0 1.0 1.0 ns, max Pad to I output, with delay TIOPID XCV812E 0.55 1.1 1.1 1.1 ns, max Pad to output IQ via transparent latch, no delay TIOPLI All 0.75 1.4 1.5 1.6 ns, max Pad to output IQ via transparent latch, with delay XCV405E 1.55 3.5 3.6 3.7 ns, max TIOPLID XCV812E 1.55 3.5 3.6 3.7 ns, max All 0.56 1.2 1.3 1.4 ns, min Propagation Delays Propagation Delays Clock Minimum Pulse Width, High TCH Minimum Pulse Width, Low TCL 0.56 1.2 1.3 1.4 ns, min TIOCKIQ 0.18 0.4 0.7 0.7 ns, max Clock CLK to output IQ Setup and Hold Times with respect to Clock at IOB Input Register Pad, no delay TIOPICK / TIOICKP All 0.69 / 0 1.3 / 0 1.4 / 0 1.5 / 0 ns, min TIOPICKD / TIOICKPD XCV405E 1.49 / 0 3.4 / 0 3.5 / 0 3.5 / 0 ns, min XCV812E 1.49 / 0 3.4 / 0 3.5 / 0 3.5 / 0 ns, min ICE input TIOICECK / TIOCKICE All 0.28 / 0.0 0.55 / 0.01 0.7 / 0.01 0.7 / 0.01 ns, min SR input (IFF, synchronous) TIOSRCKI All 0.38 0.8 0.9 1.0 ns, min SR input to IQ (asynchronous) TIOSRIQ All 0.54 1.1 1.2 1.4 ns, max GSR to output IQ TGSRQ All 3.88 7.6 8.5 9.7 ns, max Pad, with delay Set/Reset Delays Notes: 1. A Zero "0" Hold Time listing indicates no hold time or a negative hold time. Negative values can not be guaranteed "best-case", but if a "0" is listed, there is no positive hold time. 2. Input timing i for LVTTL is measured at 1.4 V. For other I/O standards, see Table 3. DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 5 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays IOB Input Switching Characteristics Standard Adjustments Speed Grade(1) Description Symbol Standard Min -8 -7 -6 Units TILVTTL LVTTL 0.0 0.0 0.0 0.0 ns TILVCMOS2 LVCMOS2 -0.02 0.0 0.0 0.0 ns TILVCMOS18 LVCMOS18 -0.02 +0.20 +0.20 +0.20 ns TILVDS LVDS 0.00 +0.15 +0.15 +0.15 ns TILVPECL LVPECL 0.00 +0.15 +0.15 +0.15 ns TIPCI33_3 PCI, 33 MHz, 3.3 V -0.05 +0.08 +0.08 +0.08 ns TIPCI66_3 PCI, 66 MHz, 3.3 V -0.05 -0.11 -0.11 -0.11 ns TIGTL GTL +0.10 +0.14 +0.14 +0.14 ns TIGTLPLUS GTL+ +0.06 +0.14 +0.14 +0.14 ns TIHSTL HSTL +0.02 +0.04 +0.04 +0.04 ns TISSTL2 SSTL2 -0.04 +0.04 +0.04 +0.04 ns TISSTL3 SSTL3 -0.02 +0.04 +0.04 +0.04 ns TICTT CTT +0.01 +0.10 +0.10 +0.10 ns TIAGP AGP -0.03 +0.04 +0.04 +0.04 ns Data Input Delay Adjustments Standard-specific data input delay adjustments Notes: 1. Input timing i for LVTTL is measured at 1.4 V. For other I/O standards, see Table 3. I T TCE D Q CE Weak Keeper SR O OCE PAD D Q CE OBUFT SR I IQ Q D CE Programmable Delay IBUF Vref SR SR CLK ICE ds022_02_091300 Figure 1: Virtex-E Input/Output Block (IOB) Module 3 of 4 6 www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays IOB Output Switching Characteristics, Figure 1 Output delays terminating at a pad are specified for LVTTL with 12 mA drive and fast slew rate. For other standards, adjust the delays with the values shown in ``IOB Output Switching Characteristics Standard Adjustments'' on page 8.. Speed Grade(2) Description(1) Symbol Min3 -8 -7 -6 Units O input to Pad TIOOP 1.04 2.5 2.7 2.9 ns, max O input to Pad via transparent latch TIOOLP 1.24 2.9 3.1 3.4 ns, max T input to Pad high-impedance (Note 2) TIOTHZ 0.73 1.5 1.7 1.9 ns, max T input to valid data on Pad TIOTON 1.13 2.7 2.9 3.1 ns, max T input to Pad high-impedance via transparent latch (Note 2) TIOTLPHZ 0.86 1.8 2.0 2.2 ns, max T input to valid data on Pad via transparent latch TIOTLPON 1.26 3.0 3.2 3.4 ns, max TGTS 1.94 4.1 4.6 4.9 ns, max Minimum Pulse Width, High TCH 0.56 1.2 1.3 1.4 ns, min Minimum Pulse Width, Low TCL 0.56 1.2 1.3 1.4 ns, min Clock CLK to Pad TIOCKP 0.97 2.4 2.8 2.9 ns, max Clock CLK to Pad high-impedance (synchronous) (Note 2) TIOCKHZ 0.77 1.6 2.0 2.2 ns, max Clock CLK to valid data on Pad (synchronous) TIOCKON 1.17 2.8 3.2 3.4 ns, max TIOOCK / TIOCKO 0.43 / 0 0.9 / 0 1.0 / 0 1.1 / 0 ns, min OCE input TIOOCECK / TIOCKOCE 0.28 / 0 0.55 / 0.01 0.7 / 0 0.7 / 0 ns, min SR input (OFF) TIOSRCKO / TIOCKOSR 0.40 / 0 0.8 / 0 0.9 / 0 1.0 / 0 ns, min TIOTCK / TIOCKT 0.26 / 0 0.51 / 0 0.6 / 0 0.7 / 0 ns, min 3-State Setup Times, TCE input TIOTCECK / TIOCKTCE 0.30 / 0 0.6 / 0 0.7 / 0 0.8 / 0 ns, min 3-State Setup Times, SR input (TFF) TIOSRCKT / TIOCKTSR 0.38 / 0 0.8 / 0 0.9 / 0 1.0 / 0 ns, min SR input to Pad (asynchronous) TIOSRP 1.30 3.1 3.3 3.5 ns, max SR input to Pad high-impedance (asynchronous) (Note 2) TIOSRHZ 1.08 2.2 2.4 2.7 ns, max SR input to valid data on Pad (asynchronous) TIOSRON 1.48 3.4 3.7 3.9 ns, max GSR to Pad TIOGSRQ 3.88 7.6 8.5 9.7 ns, max Propagation Delays 3-State Delays GTS to Pad high impedance (Note 2) Sequential Delays Clock CLK Setup and Hold Times before/after Clock CLK O input 3-State Setup Times, T input Set/Reset Delays Notes: 1. A Zero "0" Hold Time listing indicates no hold time or a negative hold time. Negative values can not be guaranteed "best-case", but if a "0" is listed, there is no positive hold time. 2. 3-state turn-off delays should not be adjusted. DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 7 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays IOB Output Switching Characteristics Standard Adjustments Output delays terminating at a pad are specified for LVTTL with 12 mA drive and fast slew rate. For other standards, adjust the delays by the values shown. Speed Grade Description Symbol Standard Min -8 -7 -6 Units TOLVTTL_S2 LVTTL, Slow, 2 mA 4.2 +14.7 +14.7 +14.7 ns TOLVTTL_S4 4 mA 2.5 +7.5 +7.5 +7.5 ns TOLVTTL_S6 6 mA 1.8 +4.8 +4.8 +4.8 ns TOLVTTL_S8 8 mA 1.2 +3.0 +3.0 +3.0 ns TOLVTTL_S12 12 mA 1.0 +1.9 +1.9 +1.9 ns TOLVTTL_S16 16 mA 0.9 +1.7 +1.7 +1.7 ns TOLVTTL_S24 24 mA 0.8 +1.3 +1.3 +1.3 ns TOLVTTL_F2 LVTTL, Fast, 2 mA 1.9 +13.1 +13.1 +13.1 ns TOLVTTL_F4 4 mA 0.7 +5.3 +5.3 +5.3 ns TOLVTTL_F6 6 mA 0.20 +3.1 +3.1 +3.1 ns TOLVTTL_F8 8 mA 0.10 +1.0 +1.0 +1.0 ns TOLVTTL_F12 12 mA 0.0 0.0 0.0 0.0 ns TOLVTTL_F16 16 mA -0.10 -0.05 -0.05 -0.05 ns TOLVTTL_F24 24 mA -0.10 -0.20 -0.20 -0.20 ns TOLVCMOS_2 LVCMOS2 0.10 +0.09 +0.09 +0.09 ns TOLVCMOS_18 LVCMOS18 0.10 +0.7 +0.7 +0.7 ns TOLVDS LVDS -0.39 -1.2 -1.2 -1.2 ns TOLVPECL LVPECL -0.20 -0.41 -0.41 -0.41 ns TOPCI33_3 PCI, 33 MHz, 3.3 V 0.50 +2.3 +2.3 +2.3 ns TOPCI66_3 PCI, 66 MHz, 3.3 V 0.10 -0.41 -0.41 -0.41 ns TOGTL GTL 0.6 +0.49 +0.49 +0.49 ns TOGTLP GTL+ 0.7 +0.8 +0.8 +0.8 ns TOHSTL_I HSTL I 0.10 -0.51 -0.51 -0.51 ns TOHSTL_IIII HSTL III -0.10 -0.91 -0.91 -0.91 ns TOHSTL_IV HSTL IV -0.20 -1.01 -1.01 -1.01 ns TOSSTL2_I SSTL2 I -0.10 -0.51 -0.51 -0.51 ns TOSSTL2_II SSTL2 II -0.20 -0.91 -0.91 -0.91 ns TOSSTL3_I SSTL3 I -0.20 -0.51 -0.51 -0.51 ns TOSSTL3_II SSTL3 II -0.30 -1.01 -1.01 -1.01 ns TOCTT CTT 0.0 -0.61 -0.61 -0.61 ns TOAGP AGP -0.1 -0.91 -0.91 -0.91 ns Output Delay Adjustments Standard-specific adjustments for output delays terminating at pads (based on standard capacitive load, Csl) Module 3 of 4 8 www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Calculation of Tioop as a Function of Capacitance Tioop is the propagation delay from the O Input of the IOB to the pad. The values for Tioop are based on the standard capacitive load (Csl) for each I/O standard as listed in Table 2. For other capacitive loads, use the formulas below to calculate the corresponding Tioop. Table 2: where: Constants for Use in Calculation of Tioop Csl (pF) fl (ns/pF) LVTTL Fast Slew Rate, 2mA drive 35 0.41 LVTTL Fast Slew Rate, 4mA drive 35 0.20 LVTTL Fast Slew Rate, 6mA drive 35 0.13 LVTTL Fast Slew Rate, 8mA drive 35 0.079 LVTTL Fast Slew Rate, 12mA drive 35 0.044 LVTTL Fast Slew Rate, 16mA drive 35 0.043 LVTTL Fast Slew Rate, 24mA drive 35 0.033 LVTTL Slow Slew Rate, 2mA drive 35 0.41 LVTTL Slow Slew Rate, 4mA drive 35 0.20 LVTTL Slow Slew Rate, 6mA drive 35 0.10 LVTTL Slow Slew Rate, 8mA drive 35 LVTTL Slow Slew Rate, 12mA drive Standard Tioop = Tioop + Topadjust + (Cload - Csl) * fl Topadjust is reported above in the Output Delay Adjustment section. Cload is the capacitive load for the design. Table 3: Delay Measurement Methodology VL1 VH1 Meas. Point VREF (Typ)2 LVTTL 0 3 1.4 - LVCMOS2 0 2.5 1.125 - Standard PCI33_3 Per PCI Spec - PCI66_3 Per PCI Spec - GTL VREF -0.2 VREF +0.2 VREF 0.80 0.086 GTL+ VREF -0.2 VREF +0.2 VREF 1.0 35 0.058 HSTL Class I VREF -0.5 VREF +0.5 VREF 0.75 LVTTL Slow Slew Rate, 16mA drive 35 0.050 HSTL Class III VREF -0.5 VREF +0.5 VREF 0.90 LVTTL Slow Slew Rate, 24mA drive 35 0.048 HSTL Class IV VREF -0.5 VREF +0.5 VREF 0.90 LVCMOS2 35 0.041 SSTL3 I & II VREF -1.0 VREF +1.0 VREF 1.5 LVCMOS18 35 0.050 SSTL2 I & II VREF -0.75 VREF +0.75 VREF 1.25 PCI 33 MHZ 3.3 V 10 0.050 CTT 10 0.033 VREF -0.2 VREF +0.2 VREF 1.5 PCI 66 MHz 3.3 V GTL 0 0.014 AGP VREF - VREF + GTL+ 0 0.017 (0.2xVCCO) (0.2xVCCO) VREF Per AGP Spec HSTL Class I 20 0.022 LVDS 1.2 - 0.125 1.2 + 0.125 1.2 HSTL Class III 20 0.016 LVPECL 1.6 - 0.3 1.6 + 0.3 1.6 HSTL Class IV 20 0.014 SSTL2 Class I 30 0.028 SSTL2 Class II 30 0.016 SSTL3 Class I 30 0.029 SSTL3 Class II 30 0.016 CTT 20 0.035 AGP 10 0.037 Notes: 1. Input waveform switches between VLand VH. 2. Measurements are made at VREF (Typ), Maximum, and Minimum. Worst-case values are reported. I/O parameter measurements are made with the capacitance values shown in Table 2. See the Application Examples for appropriate terminations. I/O standard measurements are reflected in the IBIS model information except where the IBIS format precludes it. Notes: 1. I/O parameter measurements are made with the capacitance values shown above. See the Application Examples for appropriate terminations. 2. I/O standard measurements are reflected in the IBIS model information except where the IBIS format precludes it. DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 9 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Clock Distribution Switching Characteristics Speed Grade Description Symbol Min -8 -7 -6 Units Global Clock PAD to output. TGPIO 0.38 0.7 0.7 0.7 ns, max Global Clock Buffer I input to O output TGIO 0.11 0.19 0.45 0.50 ns, max GCLK IOB and Buffer I/O Standard Global Clock Input Adjustments Speed Grade Description(1) Symbol Standard Min -8 -7 -6 Units TGPLVTTL LVTTL 0.0 0.0 0.0 0.0 ns, max TGPLVCMOS2 LVCMOS2 -0.02 0.0 0.0 0.0 ns, max TGPLVCMOS18 LVCMOS2 0.12 0.20 0.20 0.20 ns, max TGLVDS LVDS 0.23 0.38 0.38 0.38 ns, max TGLVPECL LVPECL 0.23 0.38 0.38 0.38 ns, max TGPPCI33_3 PCI, 33 MHz, 3.3 V -0.05 0.08 0.08 0.08 ns, max TGPPCI66_3 PCI, 66 MHz, 3.3 V -0.05 -0.11 -0.11 -0.11 ns, max TGPGTL GTL 0.20 0.37 0.37 0.37 ns, max TGPGTLP GTL+ 0.20 0.37 0.37 0.37 ns, max TGPHSTL HSTL 0.18 0.27 0.27 0.27 ns, max TGPSSTL2 SSTL2 0.21 0.27 0.27 0.27 ns, max TGPSSTL3 SSTL3 0.18 0.27 0.27 0.27 ns, max TGPCTT CTT 0.22 0.33 0.33 0.33 ns, max TGPAGP AGP 0.21 0.27 0.27 0.27 ns, max Data Input Delay Adjustments Standard-specific global clock input delay adjustments Notes: 1. Input timing for GPLVTTL is measured at 1.4 V. For other I/O standards, see Table 3. Module 3 of 4 10 www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays CLB Switching Characteristics Delays originating at F/G inputs vary slightly according to the input used, see Figure 2. The values listed below are worst-case. Precise values are provided by the timing analyzer. Speed Grade Description(1) Symbol Min -8 -7 -6 Units 4-input function: F/G inputs to X/Y outputs TILO 0.19 0.40 0.42 0.47 ns, max 5-input function: F/G inputs to F5 output TIF5 0.36 0.76 0.8 0.9 ns, max 5-input function: F/G inputs to X output TIF5X 0.35 0.74 0.8 0.9 ns, max 6-input function: F/G inputs to Y output via F6 MUX TIF6Y 0.35 0.74 0.9 1.0 ns, max 6-input function: F5IN input to Y output TF5INY 0.04 0.11 0.20 0.22 ns, max Incremental delay routing through transparent latch to XQ/YQ outputs TIFNCTL 0.27 0.63 0.7 0.8 ns, max TBYYB 0.19 0.38 0.46 0.51 ns, max FF Clock CLK to XQ/YQ outputs TCKO 0.34 0.78 0.9 1.0 ns, max Latch Clock CLK to XQ/YQ outputs TCKLO 0.40 0.77 0.9 1.0 ns, max 4-input function: F/G Inputs TICK / TCKI 0.39 / 0 0.9 / 0 1.0 / 0 1.1 / 0 ns, min 5-input function: F/G inputs TIF5CK / TCKIF5 0.55 / 0 1.3 / 0 1.4 / 0 1.5 / 0 ns, min 6-input function: F5IN input TF5INCK / TCKF5IN 0.27 / 0 0.6 / 0 0.8 / 0 0.8 / 0 ns, min 6-input function: F/G inputs via F6 MUX TIF6CK / TCKIF6 0.58 / 0 1.3 / 0 1.5 / 0 1.6 / 0 ns, min BX/BY inputs TDICK / TCKDI 0.25 / 0 0.6 / 0 0.7 / 0 0.8 / 0 ns, min CE input TCECK / TCKCE 0.28 / 0 0.55 / 0 0.7 / 0 0.7 / 0 ns, min SR/BY inputs (synchronous) TRCK / TCKR 0.24 / 0 0.46 / 0 0.52 / 0 0.6 / 0 ns, min Minimum Pulse Width, High TCH 0.56 1.2 1.3 1.4 ns, min Minimum Pulse Width, Low TCL 0.56 1.2 1.3 1.4 ns, min TRPW 0.94 1.9 2.1 2.4 ns, min Delay from SR/BY inputs to XQ/YQ outputs (asynchronous) TRQ 0.39 0.8 0.9 1.0 ns, max Toggle Frequency (MHz) (for export control) FTOG - 416 400 357 MHz Combinatorial Delays BY input to YB output Sequential Delays Setup and Hold Times before/after Clock CLK Clock CLK Set/Reset Minimum Pulse Width, SR/BY inputs Notes: 1. A Zero "0" Hold Time listing indicates no hold time or a negative hold time. Negative values can not be guaranteed "best-case", but if a "0" is listed, there is no positive hold time. DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 11 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays COUT YB CY G4 G3 G2 G1 I3 I2 I1 I0 Y O LUT DI WE 0 INIT D Q CE 1 REV YQ BY XB F5IN F6 CY CK WE A4 WSO WSH BX X DI INIT DQ CE BX F4 F3 F2 F1 I3 I2 I1 I0 F5 F5 BY DG WE XQ DI REV O LUT 0 1 SR CLK CE CIN ds022_05_092000 Figure 2: Detailed View of Virtex-E Slice Module 3 of 4 12 www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays CLB Arithmetic Switching Characteristics Setup times not listed explicitly can be approximated by decreasing the combinatorial delays by the setup time adjustment listed. Precise values are provided by the timing analyzer. Speed Grade Description(1) Symbol Min -8 -7 -6 Units F operand inputs to X via XOR TOPX 0.32 0.68 0.8 0.8 ns, max F operand input to XB output TOPXB 0.35 0.65 0.8 0.9 ns, max F operand input to Y via XOR TOPY 0.59 1.07 1.4 1.5 ns, max F operand input to YB output TOPYB 0.48 0.89 1.1 1.3 ns, max F operand input to COUT output TOPCYF 0.37 0.71 0.9 1.0 ns, max G operand inputs to Y via XOR TOPGY 0.34 0.72 0.8 0.9 ns, max G operand input to YB output TOPGYB 0.47 0.78 1.2 1.3 ns, max G operand input to COUT output TOPCYG 0.36 0.60 0.9 1.0 ns, max BX initialization input to COUT TBXCY 0.19 0.36 0.51 0.57 ns, max CIN input to X output via XOR TCINX 0.27 0.50 0.6 0.7 ns, max CIN input to XB TCINXB 0.02 0.04 0.07 0.08 ns, max CIN input to Y via XOR TCINY 0.26 0.45 0.7 0.7 ns, max CIN input to YB TCINYB 0.16 0.28 0.38 0.43 ns, max TBYP 0.05 0.10 0.14 0.15 ns, max F1/2 operand inputs to XB output via AND TFANDXB 0.10 0.30 0.35 0.39 ns, max F1/2 operand inputs to YB output via AND TFANDYB 0.28 0.56 0.7 0.8 ns, max F1/2 operand inputs to COUT output via AND TFANDCY 0.17 0.38 0.46 0.51 ns, max G1/2 operand inputs to YB output via AND TGANDYB 0.20 0.46 0.55 0.7 ns, max G1/2 operand inputs to COUT output via AND TGANDCY 0.09 0.28 0.30 0.34 ns, max CIN input to FFX TCCKX/TCKCX 0.47 / 0 1.0 / 0 1.2 / 0 1.3 / 0 ns, min CIN input to FFY TCCKY/TCKCY 0.49 / 0 0.92 / 0 1.2 / 0 1.3 / 0 ns, min Combinatorial Delays CIN input to COUT output Multiplier Operation Setup and Hold Times before/after Clock CLK Notes: 1. A Zero "0" Hold Time listing indicates no hold time or a negative hold time. Negative values can not be guaranteed "best-case", but if a "0" is listed, there is no positive hold time. DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 13 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays CLB Distributed RAM Switching Characteristics Speed Grade Description(1) Symbol Min -8 -7 -6 Units Clock CLK to X/Y outputs (WE active) 16 x 1 mode TSHCKO16 0.67 1.38 1.5 1.7 ns, max Clock CLK to X/Y outputs (WE active) 32 x 1 mode TSHCKO32 0.84 1.66 1.9 2.1 ns, max TREG 1.25 2.39 2.9 3.2 ns, max F/G address inputs TAS/TAH 0.19 / 0 0.38 / 0 0.42 / 0 0.47 / 0 ns, min BX/BY data inputs (DIN) TDS/TDH 0.44 / 0 0.87 / 0 0.97 / 0 1.09 / 0 ns, min SR input (WE) TWS/TWH 0.29 / 0 0.57 / 0 0.7 / 0 0.8 / 0 ns, min Minimum Pulse Width, High TWPH 0.96 1.9 2.1 2.4 ns, min Minimum Pulse Width, Low TWPL 0.96 1.9 2.1 2.4 ns, min Minimum clock period to meet address write cycle time TWC 1.92 3.8 4.2 4.8 ns, min Minimum Pulse Width, High TSRPH 1.0 1.9 2.1 2.4 ns, min Minimum Pulse Width, Low TSRPL 1.0 1.9 2.1 2.4 ns, min Sequential Delays Shift-Register Mode Clock CLK to X/Y outputs Setup and Hold Times before/after Clock CLK Clock CLK Shift-Register Mode Notes: 1. A Zero "0" Hold Time listing indicates no hold time or a negative hold time. Negative values can not be guaranteed "best-case", but if a "0" is listed, there is no positive hold time. RAMB4_S#_S# WEA ENA RSTA CLKA ADDRA[#:0] DIA[#:0] WEB ENB RSTB CLKB ADDRB[#:0] DIB[#:0] DOA[#:0] DOB[#:0] ds022_06_121699 Figure 3: Dual-Port Block SelectRAM Module 3 of 4 14 www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Block RAM Switching Characteristics Speed Grade Description(1) Symbol Min -8 -7 -6 Units TBCKO 0.63 2.46 3.1 3.5 ns, max ADDR inputs TBACK/TBCKA 0.42 / 0 0.9 / 0 1.0 / 0 1.1 / 0 ns, min DIN inputs TBDCK/TBCKD 0.42 / 0 0.9 / 0 1.0 / 0 1.1 / 0 ns, min EN input TBECK/TBCKE 0.97 / 0 2.0 / 0 2.2 / 0 2.5 / 0 ns, min RST input TBRCK/TBCKR 0.9 / 0 1.8 / 0 2.1 / 0 2.3 / 0 ns, min WEN input TBWCK/TBCKW 0.86 / 0 1.7 / 0 2.0 / 0 2.2 / 0 ns, min Minimum Pulse Width, High TBPWH 0.6 1.2 1.35 1.5 ns, min Minimum Pulse Width, Low TBPWL 0.6 1.2 1.35 1.5 ns, min CLKA -> CLKB setup time for different ports TBCCS 1.2 2.4 2.7 3.0 ns, min Sequential Delays Clock CLK to DOUT output Setup and Hold Times before Clock CLK Clock CLK Notes: 1. A Zero "0" Hold Time listing indicates no hold time or a negative hold time. Negative values can not be guaranteed "best-case", but if a "0" is listed, there is no positive hold time. TBUF Switching Characteristics Speed Grade Description Symbol Min -8 -7 -6 Units TIO 0.0 0.0 0.0 0 .0 ns, max TRI input to OUT output high-impedance TOFF 0.05 0.092 0.10 0.11 ns, max TRI input to valid data on OUT output TON 0.05 0.092 0.10 0.11 ns, max Combinatorial Delays IN input to OUT output JTAG Test Access Port Switching Characteristics Description Symbol Value Units TMS and TDI Setup times before TCK TTAPTK 4.0 ns, min TMS and TDI Hold times after TCK TTCKTAP 2.0 ns, min Output delay from clock TCK to output TDO TTCKTDO 11.0 ns, max FTCK 33 MHz, max Maximum TCK clock frequency DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 15 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Virtex-E Pin-to-Pin Output Parameter Guidelines All devices are 100% functionally tested. Listed below are representative values for typical pin locations and normal clock loading. Values are expressed in nanoseconds unless otherwise noted. Global Clock Input to Output Delay for LVTTL, 12 mA, Fast Slew Rate, with DLL Speed Grade(2) Description(1) LVTTL Global Clock Input to Output Delay using Output Flip-flop, 12 mA, Fast Slew Rate, with DLL. Symbol Device(3) Min -8 -7 -6 Units TICKOFDLL XCV405E 1.0 3.1 3.1 3.1 ns XCV812E 1.0 3.1 3.1 3.1 ns For data output with different standards, adjust the delays with the values shown in ``IOB Output Switching Characteristics Standard Adjustments'' on page 8. Notes: 1. Listed above are representative values where one global clock input drives one vertical clock line in each accessible column, and where all accessible IOB and CLB flip-flops are clocked by the global clock net. 2. Output timing is measured at 50% VCC threshold with 35 pF external capacitive load. For other I/O standards and different loads, see Table 2 and Table 3. 3. DLL output jitter is already included in the timing calculation. Global Clock Input to Output Delay for LVTTL, 12 mA, Fast Slew Rate, without DLL Speed Grade(2) Description(1) LVTTL Global Clock Input to Output Delay using Output Flip-flop, 12 mA, Fast Slew Rate, without DLL. Symbol Device Min -8 -7 -6 Units TICKOF XCV405E 1.6 4.5 4.7 4.9 ns XCV812E 1.8 4.8 5.0 5.2 ns For data output with different standards, adjust the delays with the values shown in ``IOB Output Switching Characteristics Standard Adjustments'' on page 8. Notes: 1. Listed above are representative values where one global clock input drives one vertical clock line in each accessible column, and where all accessible IOB and CLB flip-flops are clocked by the global clock net. 2. Output timing is measured at 50% VCC threshold with 35 pF external capacitive load. For other I/O standards and different loads, see Table 2 and Table 3. Module 3 of 4 16 www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Virtex-E Pin-to-Pin Input Parameter Guidelines All devices are 100% functionally tested. Listed below are representative values for typical pin locations and normal clock loading. Values are expressed in nanoseconds unless otherwise noted. Global Clock Set-Up and Hold for LVTTL Standard, with DLL Speed Grade(2) Description(1) Symbol Device(3) Min -8 -7 -6 Units XCV405E 1.5 / -0.4 1.5 / -0.4 1.6 / -0.4 1.7 / -0.4 ns XCV812E 1.5 / -0.4 1.5 / -0.4 1.6 / -0.4 1.7 / -0.4 ns Input Setup and Hold Time Relative to Global Clock Input Signal for LVTTL Standard. For data input with different standards, adjust the setup time delay by the values shown in ``IOB Input Switching Characteristics Standard Adjustments'' on page 6. No Delay TPSDLL/TPHDLL Global Clock and IFF, with DLL Notes: 1. IFF = Input Flip-Flop or Latch 2. Setup time is measured relative to the Global Clock input signal with the fastest route and the lightest load. Hold time is measured relative to the Global Clock input signal with the slowest route and heaviest load. 3. DLL output jitter is already included in the timing calculation. Global Clock Set-Up and Hold for LVTTL Standard, without DLL Speed Grade(2) Description(1) Symbol Device(3) Min -8 -7 -6 Units XCV405E 2.3 / 0 2.3 / 0 2.3 / 0 2.3 / 0 ns XCV812E 2.5 / 0 2.5 / 0 2.5 / 0 2.5 / 0 ns Input Setup and Hold Time Relative to Global Clock Input Signal for LVTTL Standard. For data input with different standards, adjust the setup time delay by the values shown in ``IOB Input Switching Characteristics Standard Adjustments'' on page 6. Full Delay Global Clock and IFF, without DLL TPSFD/TPHFD Notes: 1. IFF = Input Flip-Flop or Latch 2. Setup time is measured relative to the Global Clock input signal with the fastest route and the lightest load. Hold time is measured relative to the Global Clock input signal with the slowest route and heaviest load. 3. A Zero "0" Hold Time listing indicates no hold time or a negative hold time. Negative values can not be guaranteed "best-case", but if a "0" is listed, there is no positive hold time. DS025-3 (v2.3.2) March 14, 2003 www.xilinx.com 1-800-255-7778 Module 3 of 4 17 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays DLL Timing Parameters All devices are 100 percent functionally tested. Because of the difficulty in directly measuring many internal timing parameters, those parameters are derived from benchmark timing patterns. The following guidelines reflect worst-case values across the recommended operating conditions. Speed Grade -8 Description Symbol FCLKIN -7 -6 Min Max Min Max Min Max Units Input Clock Frequency (CLKDLLHF) FCLKINHF 60 320 60 320 60 260 MHz Input Clock Frequency (CLKDLL) FCLKINLF 25 160 25 160 25 135 MHz Input Clock Low/High Pulse Width TDLLPW 25 MHz 5.0 5.0 5.0 ns 50 MHz 3.0 3.0 3.0 ns 100 MHz 2.4 2.4 2.4 ns 150 MHz 2.0 2.0 2.0 ns 200 MHz 1.8 1.8 1.8 ns 250 MHz 1.5 1.5 1.5 ns 300 MHz 1.3 1.3 NA ns Period Tolerance: the allowed input clock period change in nanoseconds. TCLKIN +_ TIPTOL TCLKIN Output Jitter: the difference between an ideal reference clock edge and the actual design. Phase Offset and Maximum Phase Difference Ideal Period Actual Period + Jitter +/- Jitter + Maximum Phase Difference + Phase Offset ds022_24_091200 Figure 4: DLL Timing Waveforms Module 3 of 4 18 www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays DLL Clock Tolerance, Jitter, and Phase Information All DLL output jitter and phase specifications determined through statistical measurement at the package pins using a clock mirror configuration and matched drivers. CLKDLLHF Description Symbol FCLKIN CLKDLL Min Max Min Max Units Input Clock Period Tolerance TIPTOL - 1.0 - 1.0 ns Input Clock Jitter Tolerance (Cycle to Cycle) TIJITCC - 150 - 300 ps Time Required for DLL to Acquire Lock(6) TLOCK > 60 MHz - 20 - 20 s 50 - 60 MHz - - - 25 s 40 - 50 MHz - - - 50 s 30 - 40 MHz - - - 90 s 25 - 30 MHz - - - 120 s TOJITCC 60 60 ps Phase Offset between CLKIN and CLKO(2) TPHIO 100 100 ps Phase Offset between Clock Outputs on the DLL(3) TPHOO 140 140 ps Maximum Phase Difference between CLKIN and CLKO(4) TPHIOM 160 160 ps Maximum Phase Difference between Clock Outputs on the DLL(5) TPHOOM 200 200 ps Output Jitter (cycle-to-cycle) for any DLL Clock Output(1) Notes: 1. Output Jitter is cycle-to-cycle jitter measured on the DLL output clock and is based on a maximum tap delay resolution, excluding input clock jitter. 2. Phase Offset between CLKIN and CLKO is the worst-case fixed time difference between rising edges of CLKIN and CLKO, excluding Output Jitter and input clock jitter. 3. Phase Offset between Clock Outputs on the DLL is the worst-case fixed time difference between rising edges of any two DLL outputs, excluding Output Jitter and input clock jitter. 4. Maximum Phase Difference between CLKIN an CLKO is the sum of Output Jitter and Phase Offset between CLKIN and CLKO, or the greatest difference between CLKIN and CLKO rising edges due to DLL alone (excluding input clock jitter). 5. Maximum Phase DIfference between Clock Outputs on the DLL is the sum of Output JItter and Phase Offset between any DLL clock outputs, or the greatest difference between any two DLL output rising edges sue to DLL alone (excluding input clock jitter). 6. Add 30% to the value for Industrial grade parts. Revision History The following table shows the revision history for this document. Date Version Revision 03/23/00 1.0 Initial Xilinx release. 08/01/00 1.1 Accumulated edits and fixes. Upgrade to Preliminary. Preview -8 numbers added. Reformatted to adhere to corporate documentation style guidelines. Minor changes in BG560 pin-out table. 09/19/00 1.2 * * DS025-3 (v2.3.2) March 14, 2003 In Table 3 (Module 4), FG676 Fine-Pitch BGA -- XCV405E, the following pins are no longer labeled as VREF: B7, G16, G26, W26, AF20, AF8, Y1, H1. Min values added to Virtex-E Electrical Characteristics tables. www.xilinx.com 1-800-255-7778 Module 3 of 4 19 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Date Version 11/20/00 1.3 Revision * * * * * 04/19/01 1.5 * In Table 4, FG676 Fine-Pitch BGA -- XCV405E, pin B19 is no longer labeled as VREF, and pin G16 is now labeled as VREF. Updated values in Virtex-E Switching Characteristics tables. Converted data sheet to modularized format. See the Virtex-E Extended Memory Data Sheet section. Updated values in Virtex-E Switching Characteristics tables. 07/23/01 1.6 * Under Absolute Maximum Ratings, changed (TSOL) to 220 C . * 04/02/01 1.4 * Updated speed grade -8 numbers in Virtex-E Electrical Characteristics tables (Module 3). Updated minimums in Table 11 (Module 2), and added notes to Table 12 (Module 2). Added to note 2 of Absolute Maximum Ratings (Module 3). Changed all minimum hold times to -0.4 for Global Clock Set-Up and Hold for LVTTL Standard, with DLL (Module 3). Revised maximum TDLLPW in -6 speed grade for DLL Timing Parameters (Module 3). * * 07/26/01 1.7 * Changes made to SSTL symbol names in IOB Input Switching Characteristics Standard Adjustments table. Removed TSOL parameter and added footnote to Absolute Maximum Ratings table. 09/18/01 1.8 * Reworded power supplies footnote to Absolute Maximum Ratings table. 10/25/01 1.9 * Updated the speed grade designations used in data sheets, and added Table 1, which shows the current speed grade designation for each device. Updated Power-On Power Supply Requirements table. Updated the XCV405E device speed grade designation to Preliminary in Table 1. Updated Power-On Power Supply Requirements table. Updated footnotes to the DC Input and Output Levels and DLL Clock Tolerance, Jitter, and Phase Information tables. Data sheet designation upgraded from Preliminary to Production. Removed mention of MIL-M-38510/605 specification. Added link to XAPP158 from the Power-On Power Supply Requirements section. Revised VIN in Absolute Maximum Ratings Table. Added Clock CLK switching characteristics to ``IOB Input Switching Characteristics'' on page 5 and ``IOB Output Switching Characteristics, Figure 1'' on page 7. Added footnote regarding VIN PCI compliance to Absolute Maximum Ratings table. * * * * 11/09/01 2.0 02/01/02 2.1 07/17/02 2.2 09/10/02 2.3 * * * * 12/22/02 2.3.1 * 03/14/03 2.3.2 * Under Power-On Power Supply Requirements, the fastest ramp rate is no longer a "suggested" rate. Virtex-E Extended Memory Data Sheet The Virtex-E Extended Memory Data Sheet contains the following modules: * DS025-1, Virtex-E 1.8V Extended Memory FPGAs: * Introduction and Ordering Information (Module 1) * DS025-2, Virtex-E 1.8V Extended Memory FPGAs: Functional Description (Module 2) Module 3 of 4 20 DS025-3, Virtex-E 1.8V Extended Memory FPGAs: DC and Switching Characteristics (Module 3) * DS025-4, Virtex-E 1.8V Extended Memory FPGAs: Pinout Tables (Module 4) www.xilinx.com 1-800-255-7778 DS025-3 (v2.3.2) March 14, 2003 0 VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-4 (v1.6) July 17, 2002 0 0 Production Product Specification Virtex-E Pin Definitions Pin Name Dedicated Pin Direction Description GCK0, GCK1, GCK2, GCK3 Yes Input Clock input pins that connect to Global Clock Buffers. These pins become user inputs when not needed for clocks. M0, M1, M2 Yes Input Mode pins are used to specify the configuration mode. CCLK Yes Input or Output PROGRAM Yes Input DONE Yes Bidirectional Indicates that configuration loading is complete, and that the start-up sequence is in progress. The output can be open drain. INIT No Bidirectional (Open-drain) When Low, indicates that the configuration memory is being cleared. The pin becomes a user I/O after configuration. BUSY/DOUT No Output In SelectMAP mode, BUSY controls the rate at which configuration data is loaded. The pin becomes a user I/O after configuration unless the SelectMAP port is retained. The configuration Clock I/O pin: it is an input for SelectMAP and slave-serial modes, and output in master-serial mode. After configuration, it is input only, logic level = Don't Care. Initiates a configuration sequence when asserted Low. In bit-serial modes, DOUT provides preamble and configuration data to downstream devices in a daisy-chain. The pin becomes a user I/O after configuration. D0/DIN, No D1, D2, Input or Output In SelectMAP mode, D0-7 are configuration data pins. These pins become user I/Os after configuration unless the SelectMAP port is retained. In bit-serial modes, DIN is the single data input. This pin becomes a user I/O after configuration. D3, D4, D5, D6, D7 WRITE No Input In SelectMAP mode, the active-low Write Enable signal. The pin becomes a user I/O after configuration unless the SelectMAP port is retained. CS No Input In SelectMAP mode, the active-low Chip Select signal. The pin becomes a user I/O after configuration unless the SelectMAP port is retained. TDI, TDO, Yes Mixed Boundary-scan Test-Access-Port pins, as defined in IEEE1149.1. DXN, DXP Yes N/A Temperature-sensing diode pins. (Anode: DXP, cathode: DXN) VCCINT Yes Input Power-supply pins for the internal core logic. VCCO Yes Input Power-supply pins for the output drivers (subject to banking rules) VREF No Input Input threshold voltage pins. Become user I/Os when an external threshold voltage is not needed (subject to banking rules). GND Yes Input Ground TMS, TCK (c) 2000-2002 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm. All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice. DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 1 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays BG560 Ball Grid Array Packages Table 1: XCV405E and the XCV812E Virtex-E Extended Memory devices are available in the BG560 BGA package. Pins labeled I0_VREF can be used as either in all parts unless device-dependent as indicated in the footnotes. If the pin is not used as VREF, it can be used as general I/O. Immediately following Table 1, see Table 2 for BG560 package Differential Pair information. Table 1: BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# 0 GCK3 A17 0 IO A27 0 IO B25 0 IO C28 0 IO C30 0 IO D30 0 IO E18 0 IO_L0N E28 0 IO_L0P D29 0 IO_L1N_YY D28 0 IO_L1P_YY A31 0 IO_VREF_L2N_YY E27 0 IO_L2P_YY C29 0 IO_L3N_Y B30 0 IO_L3P_Y D27 0 IO_L4N_YY E26 0 IO_L4P_YY B29 0 IO_VREF_L5N_YY D26 0 IO_L5P_YY C27 0 IO_L6N E25 0 IO_L6P A28 0 IO_L7N_YY D25 0 IO_L7P_YY C26 0 IO_VREF_L8N_YY E24 1 0 IO_L8P_YY B26 0 IO_L9N_Y C25 0 IO_L9P_Y D24 0 IO_VREF_L10N_YY E23 0 IO_L10P_YY A25 0 IO_L11N_YY D23 Module 4 of 4 2 BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# 0 IO_L11P_YY B24 0 IO_L12N E22 0 IO_L12P C23 0 IO_L13N_YY A23 0 IO_L13P_YY D22 0 IO_VREF_L14N_YY E211 0 IO_L14P_YY B22 0 IO_L15N_Y D21 0 IO_L15P_Y C21 0 IO_L16N_YY B21 0 IO_L16P_YY E20 0 IO_VREF_L17N_YY D20 0 IO_L17P_YY C20 0 IO_L18N B20 0 IO_L18P E19 0 IO_L19N_YY D19 0 IO_L19P_YY C19 0 IO_VREF_L20N_YY A19 0 IO_L20P_YY D18 0 IO_LVDS_DLL_L21N C18 1 GCK2 D17 1 IO A3 1 IO D9 1 IO E8 1 IO E11 1 IO_LVDS_DLL_L21P E17 1 IO_L22N_Y C17 1 IO_L22P_Y B17 1 IO_L23N_YY B16 1 IO_VREF_L23P_YY D16 1 IO_L24N_YY E16 1 IO_L24P_YY C16 1 IO_L25N A15 1 IO_L25P C15 1 IO_L26N_YY D15 1 IO_VREF_L26P_YY E15 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 1: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays BG560 BGA -- XCV405E and XCV812E Table 1: BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# Bank Pin Description Pin# 1 IO_L27N_YY C14 2 IO D3 1 IO_L27P_YY D14 2 IO F3 1 IO_L28N_Y A13 2 IO G1 1 IO_L28P_Y E14 2 IO J2 1 IO_L29N_YY C13 2 IO_DOUT_BUSY_L45P_YY D4 1 IO_VREF_L29P_YY D131 2 IO_DIN_D0_L45N_YY E4 1 IO_L30N_YY C12 2 IO_L46P_Y F5 1 IO_L30P_YY E13 2 IO_L46N_Y B3 1 IO_L31N A11 2 IO_L47P F4 1 IO_L31P D12 2 IO_L47N C1 1 IO_L32N_YY B11 2 IO_VREF_L48P_Y G5 1 IO_L32P_YY C11 2 IO_L48N_Y E3 1 IO_L33N_YY B10 2 IO_L49P_Y D2 1 IO_VREF_L33P_YY D11 2 IO_L49N_Y G4 1 IO_L34N C10 2 IO_L50P_Y H5 1 IO_L34P A9 2 IO_L50N_Y E2 1 IO_L35N_YY C9 2 IO_VREF_L51P_YY H4 1 IO_VREF_L35P_YY D101 2 IO_L51N_YY G3 1 IO_L36N_YY A8 2 IO_L52P_Y J5 1 IO_L36P_YY B8 2 IO_L52N_Y F1 1 IO_L37N_Y E10 2 IO_L53P J4 1 IO_L37P_Y C8 2 IO_L53N H3 1 IO_L38N_YY B7 2 IO_VREF_L54P_YY K51 1 IO_VREF_L38P_YY A6 2 IO_L54N_YY H2 1 IO_L39N_YY C7 2 IO_L55P_Y J3 1 IO_L39P_YY D8 2 IO_L55N_Y K4 1 IO_L40N A5 2 IO_VREF_L56P_YY L5 1 IO_L40P B5 2 IO_D1_L56N_YY K3 1 IO_L41N_YY C6 2 IO_D2_L57P_YY L4 1 IO_VREF_L41P_YY D7 2 IO_L57N_YY K2 1 IO_L42N_YY A4 2 IO_L58P_Y M5 1 IO_L42P_YY B4 2 IO_L58N_Y L3 1 IO_L43N_Y C5 2 IO_L59P L1 1 IO_L43P_Y E7 2 IO_L59N M4 1 IO_WRITE_L44N_YY D6 2 IO_VREF_L60P_Y N51 1 IO_CS_L44P_YY A2 2 IO_L60N_Y M2 2 IO_L61P_Y N4 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 3 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 1: BG560 BGA -- XCV405E and XCV812E Table 1: BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# Bank Pin Description Pin# 2 IO_L61N_Y N3 3 IO_L77P AB3 2 IO_L62P_Y N2 3 IO_L77N AA5 2 IO_L62N_Y P5 3 IO_L78P AC1 2 IO_VREF_L63P_YY P4 3 IO_L78N AB4 2 IO_D3_L63N_YY P3 3 IO_L79P_YY AC3 2 IO_L64P_Y P2 3 IO_D5_L79N_YY AB5 2 IO_L64N_Y R5 3 IO_D6_L80P_YY AC4 2 IO_L65P_Y R4 3 IO_VREF_L80N_YY AD3 2 IO_L65N_Y R3 3 IO_L81P_Y AE1 2 IO_VREF_L66P_Y R1 3 IO_L81N_Y AC5 2 IO_L66N_Y T4 3 IO_L82P_YY AD4 2 IO_L67P_Y T5 3 IO_VREF_L82N_YY AF11 2 IO_L67N_Y T3 3 IO_L83P_Y AF2 2 IO_L68P_YY T2 3 IO_L83N_Y AD5 2 IO_L68N_YY U3 3 IO_L84P_Y AG2 3 IO_L84N_Y AE4 3 IO U4 3 IO_L85P_YY AH1 3 IO AE3 3 IO_VREF_L85N_YY AE5 3 IO AF3 3 IO_L86P_Y AF4 3 IO AH3 3 IO_L86N_Y AJ1 3 IO AK3 3 IO_L87P_Y AJ2 3 IO_L69P_Y U1 3 IO_L87N_Y AF5 3 IO_L69N_Y U2 3 IO_L88P_Y AG4 3 IO_L70P_Y V2 3 IO_VREF_L88N_Y AK2 3 IO_VREF_L70N_Y V4 3 IO_L89P_Y AJ3 3 IO_L71P_Y V5 3 IO_L89N_Y AG5 3 IO_L71N_Y V3 3 IO_L90P_Y AL1 3 IO_L72P W1 3 IO_L90N_Y AH4 3 IO_L72N W3 3 IO_D7_L91P_YY AJ4 3 IO_D4_L73P_YY W4 3 IO_INIT_L91N_YY AH5 3 IO_VREF_L73N_YY W5 3 IO_L74P_Y Y3 4 GCK0 AL17 3 IO_L74N_Y Y4 4 IO AJ8 3 IO_L75P AA1 4 IO AJ11 3 IO_L75N Y5 4 IO AK6 3 IO_L76P_Y AA3 4 IO AK9 3 IO_VREF_L76N_Y AA41 4 IO_L92P_YY AL4 Module 4 of 4 4 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 1: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays BG560 BGA -- XCV405E and XCV812E Table 1: BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# Bank Pin Description Pin# 4 IO_L92N_YY AJ6 4 IO_L111P AJ15 4 IO_L93P AK5 4 IO_L111N AK15 4 IO_L93N AN3 4 IO_L112P_YY AL15 4 IO_L94P_YY AL5 4 IO_L112N_YY AM16 4 IO_L94N_YY AJ7 4 IO_VREF_L113P_YY AL16 4 IO_VREF_L95P_YY AM4 4 IO_L113N_YY AJ16 4 IO_L95N_YY AM5 4 IO_L114P_Y AK16 4 IO_L96P_Y AK7 4 IO_L114N_Y AN17 4 IO_L96N_Y AL6 4 IO_LVDS_DLL_L115P AM17 4 IO_L97P_YY AM6 4 IO_L97N_YY AN6 5 GCK1 AJ17 4 IO_VREF_L98P_YY AL7 5 IO AL18 4 IO_L98N_YY AJ9 5 IO AL25 4 IO_L99P AN7 5 IO AL28 4 IO_L99N AL8 5 IO AL30 4 IO_L100P_YY AM8 5 IO AN28 4 IO_L100N_YY AJ10 5 IO_LVDS_DLL_L115N AM18 4 IO_VREF_L101P_YY AL91 5 IO_L116P_YY AK18 4 IO_L101N_YY AM9 5 IO_VREF_L116N_YY AJ18 4 IO_L102P_Y AK10 5 IO_L117P_YY AN19 4 IO_L102N_Y AN9 5 IO_L117N_YY AL19 4 IO_VREF_L103P_YY AL10 5 IO_L118P AK19 4 IO_L103N_YY AM10 5 IO_L118N AM20 4 IO_L104P_YY AL11 5 IO_L119P_YY AJ19 4 IO_L104N_YY AJ12 5 IO_VREF_L119N_YY AL20 4 IO_L105P AN11 5 IO_L120P_YY AN21 4 IO_L105N AK12 5 IO_L120N_YY AL21 4 IO_L106P_YY AL12 5 IO_L121P_Y AJ20 4 IO_L106N_YY AM12 5 IO_L121N_Y AM22 4 IO_VREF_L107P_YY AK131 5 IO_L122P_YY AK21 4 IO_L107N_YY AL13 5 IO_VREF_L122N_YY AN231 4 IO_L108P_Y AM13 5 IO_L123P_YY AJ21 4 IO_L108N_Y AN13 5 IO_L123N_YY AM23 4 IO_L109P_YY AJ14 5 IO_L124P AK22 4 IO_L109N_YY AK14 5 IO_L124N AM24 4 IO_VREF_L110P_YY AM14 5 IO_L125P_YY AL23 4 IO_L110N_YY AN15 5 IO_L125N_YY AJ22 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 5 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 1: BG560 BGA -- XCV405E and XCV812E Table 1: BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# Bank Pin Description Pin# 5 IO_L126P_YY AK23 6 IO_L141P_Y AF29 5 IO_VREF_L126N_YY AL24 6 IO_L142N_Y AH32 5 IO_L127P_Y AN26 6 IO_L142P_Y AF30 5 IO_L127N_Y AJ23 6 IO_VREF_L143N_YY AE29 5 IO_L128P_YY AK24 6 IO_L143P_YY AH33 5 IO_VREF_L128N_YY AM261 6 IO_L144N_Y AG33 5 IO_L129P_YY AM27 6 IO_L144P_Y AE30 5 IO_L129N_YY AJ24 6 IO_L145N_Y AD29 5 IO_L130P_Y AL26 6 IO_L145P_Y AF32 5 IO_L130N_Y AK25 6 IO_VREF_L146N_Y AE311 5 IO_L131P_YY AN29 6 IO_L146P_Y AD30 5 IO_VREF_L131N_YY AJ25 6 IO_L147N_Y AE32 5 IO_L132P_YY AK26 6 IO_L147P_Y AC29 5 IO_L132N_YY AM29 6 IO_VREF_L148N_YY AD31 5 IO_L133P_Y AM30 6 IO_L148P_YY AC30 5 IO_L133N_Y AJ26 6 IO_L149N_YY AB29 5 IO_L134P_YY AK27 6 IO_L149P_YY AC31 5 IO_VREF_L134N_YY AL29 6 IO_L150N_Y AC33 5 IO_L135P_YY AN31 6 IO_L150P_Y AB30 5 IO_L135N_YY AJ27 6 IO_L151N_Y AB31 5 IO_L136P_Y AM31 6 IO_L151P_Y AA29 5 IO_L136N_Y AK28 6 IO_VREF_L152N_Y AA301 6 IO_L152P_Y AA31 6 IO U29 6 IO_L153N_Y AA32 6 IO AE33 6 IO_L153P_Y Y29 6 IO AF31 6 IO_L154N_Y AA33 6 IO AJ32 6 IO_L154P_Y Y30 6 IO AL33 6 IO_VREF_L155N_YY Y32 6 IO_L137N_YY AH29 6 IO_L155P_YY W29 6 IO_L137P_YY AJ30 6 IO_L156N_Y W30 6 IO_L138N_Y AK31 6 IO_L156P_Y W31 6 IO_L138P_Y AH30 6 IO_L157N_Y W33 6 IO_L139N_Y AG29 6 IO_L157P_Y V30 6 IO_L139P_Y AJ31 6 IO_VREF_L158N_Y V29 6 IO_VREF_L140N_Y AK32 6 IO_L158P_Y V31 6 IO_L140P_Y AG30 6 IO_L159N_Y V32 6 IO_L141N_Y AH31 6 IO_L159P_Y U33 Module 4 of 4 6 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 1: Bank VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays BG560 BGA -- XCV405E and XCV812E Pin Description Pin# Table 1: BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# 7 IO_L175P_Y H31 7 IO E30 7 IO_L176N_Y J30 7 IO F29 7 IO_L176P_Y G32 7 IO F33 7 IO_L177N_YY J29 7 IO G30 7 IO_VREF_L177P_YY G31 7 IO K30 7 IO_L178N_Y E33 7 IO_L160N_YY U31 7 IO_L178P_Y E32 7 IO_L160P_YY U32 7 IO_L179N_Y H29 7 IO_L161N_Y T32 7 IO_L179P_Y F31 7 IO_L161P_Y T30 7 IO_L180N_Y D32 7 IO_L162N_Y T29 7 IO_VREF_L180P_Y E31 7 IO_VREF_L162P_Y T31 7 IO_L181N_Y G29 7 IO_L163N_Y R33 7 IO_L181P_Y C33 7 IO_L163P_Y R31 7 IO_L182N_Y F30 7 IO_L164N_Y R30 7 IO_L182P_Y D31 7 IO_L164P_Y R29 7 IO_L165N_YY P32 2 CCLK C4 7 IO_VREF_L165P_YY P31 3 DONE AJ5 7 IO_L166N_Y P30 NA DXN AK29 7 IO_L166P_Y P29 NA DXP AJ28 7 IO_L167N_Y M32 NA M0 AJ29 7 IO_L167P_Y N31 NA M1 AK30 7 IO_L168N_Y N30 NA M2 AN32 7 IO_VREF_L168P_Y L331 NA PROGRAM AM1 7 IO_L169N_Y M31 NA TCK E29 7 IO_L169P_Y L32 NA TDI D5 7 IO_L170N_Y M30 2 TDO E6 7 IO_L170P_Y L31 NA TMS B33 7 IO_L171N_YY M29 7 IO_L171P_YY J33 NA NC C31 7 IO_L172N_YY L30 NA NC AC2 7 IO_VREF_L172P_YY K31 NA NC AK4 7 IO_L173N_Y L29 NA NC AL3 7 IO_L173P_Y H33 7 IO_L174N_Y J31 NA VCCINT A21 7 IO_VREF_L174P_Y H32 1 NA VCCINT B12 7 IO_L175N_Y K29 NA VCCINT B14 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 7 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 1: BG560 BGA -- XCV405E and XCV812E Table 1: BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# Bank Pin Description Pin# NA VCCINT B18 0 VCCO B19 NA VCCINT B28 0 VCCO B32 NA VCCINT C22 1 VCCO A10 NA VCCINT C24 1 VCCO A16 NA VCCINT E9 1 VCCO B13 NA VCCINT E12 1 VCCO C3 NA VCCINT F2 1 VCCO E5 NA VCCINT H30 2 VCCO B2 NA VCCINT J1 2 VCCO D1 NA VCCINT K32 2 VCCO H1 NA VCCINT M3 2 VCCO M1 NA VCCINT N1 2 VCCO R2 NA VCCINT N29 3 VCCO V1 NA VCCINT N33 3 VCCO AA2 NA VCCINT U5 3 VCCO AD1 NA VCCINT U30 3 VCCO AK1 NA VCCINT Y2 3 VCCO AL2 NA VCCINT Y31 4 VCCO AN4 NA VCCINT AB2 4 VCCO AN8 NA VCCINT AB32 4 VCCO AN12 NA VCCINT AD2 4 VCCO AM2 NA VCCINT AD32 4 VCCO AM15 NA VCCINT AG3 5 VCCO AL31 NA VCCINT AG31 5 VCCO AM21 NA VCCINT AJ13 5 VCCO AN18 NA VCCINT AK8 5 VCCO AN24 NA VCCINT AK11 5 VCCO AN30 NA VCCINT AK17 6 VCCO W32 NA VCCINT AK20 6 VCCO AB33 NA VCCINT AL14 6 VCCO AF33 NA VCCINT AL22 6 VCCO AK33 NA VCCINT AL27 6 VCCO AM32 NA VCCINT AN25 7 VCCO C32 7 VCCO D33 0 VCCO A22 7 VCCO K33 0 VCCO A26 7 VCCO N32 0 VCCO A30 7 VCCO T33 Module 4 of 4 8 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 1: Bank VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays BG560 BGA -- XCV405E and XCV812E Pin Description Pin# Table 1: BG560 BGA -- XCV405E and XCV812E Bank Pin Description Pin# NA GND AD33 NA GND A1 NA GND AE2 NA GND A7 NA GND AG1 NA GND A12 NA GND AG32 NA GND A14 NA GND AH2 NA GND A18 NA GND AJ33 NA GND A20 NA GND AL32 NA GND A24 NA GND AM3 NA GND A29 NA GND AM7 NA GND A32 NA GND AM11 NA GND A33 NA GND AM19 NA GND B1 NA GND AM25 NA GND B6 NA GND AM28 NA GND B9 NA GND AM33 NA GND B15 NA GND AN1 NA GND B23 NA GND AN2 NA GND B27 NA GND AN5 NA GND B31 NA GND AN10 NA GND C2 NA GND AN14 NA GND E1 NA GND AN16 NA GND F32 NA GND AN20 NA GND G2 NA GND AN22 NA GND G33 NA GND AN27 NA GND J32 NA GND AN33 NA GND K1 NA GND L2 NA GND M33 NA GND P1 NA GND P33 NA GND R32 NA GND T1 NA GND V33 NA GND W2 NA GND Y1 NA GND Y33 NA GND AB1 NA GND AC32 DS025-4 (v1.6) July 17, 2002 Notes: 1. VREF or I/O option only in the XCV812E. www.xilinx.com 1-800-255-7778 Module 4 of 4 9 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays BG560 Differential Pin Pairs Table 2: Virtex-E Extended Memory devices have differential pin pairs that can also provide other functions when not used as a differential pair. A in the AO column indicates that the pin pair can be used as an asynchronous output for all devices provided in this package. Pairs with a note number in the AO column are device dependent. They can have asynchronous outputs if the pin pair is in the same CLB row and column in the device. Numbers in this column refer to footnotes that indicate which devices have pin pairs that can be asynchronous outputs. The Other Functions column indicates alternative function(s) not available when the pair is used as a differential pair or differential clock. Table 2: Pair BG560 Package Differential Pin Pair Summary XCV405E and XCV812E Bank P Pin N Pin AO Other Functions Global Differential Clock 3 0 A17 C18 NA IO LVDS 21 2 1 D17 E17 NA IO LVDS 21 1 5 AJ17 AM18 NA IO LVDS 115 0 4 AL17 AM17 NA IO LVDS 115 IO LVDS Total Outputs: 183, Asyncronous Outputs: 79 0 0 D29 E28 NA - 1 0 A31 D28 - 2 0 C29 E27 VREF_0 3 0 D27 B30 1 - 4 0 B29 E26 - 5 0 C27 D26 VREF_0 6 0 A28 E25 NA - 7 0 C26 D25 1 - 8 0 B26 E24 1 VREF_0 9 0 D24 C25 1 - 10 0 A25 E23 VREF_0 11 0 B24 D23 - 12 0 C23 E22 NA - 13 0 D22 A23 - 14 0 B22 E21 VREF_0 15 0 C21 D21 1 - Module 4 of 4 10 BG560 Package Differential Pin Pair Summary XCV405E and XCV812E 16 0 E20 B21 - 17 0 C20 D20 VREF_0 18 0 E19 B20 NA - 19 0 C19 D19 1 - 20 0 D18 A19 1 VREF_0 21 1 E17 C18 NA GCLK LVDS 3/2 22 1 B17 C17 1 - 23 1 D16 B16 1 VREF_1 24 1 C16 E16 1 - 25 1 C15 A15 NA - 26 1 E15 D15 VREF_1 27 1 D14 C14 - 28 1 E14 A13 1 - 29 1 D13 C13 VREF_1 30 1 E13 C12 - 31 1 D12 A11 NA - 32 1 C11 B11 - 33 1 D11 B10 VREF_1 34 1 A9 C10 2 - 35 1 D10 C9 1 VREF_1 36 1 B8 A8 1 - 37 1 C8 E10 NA - 38 1 A6 B7 VREF_1 39 1 D8 C7 - 40 1 B5 A5 2 - 41 1 D7 C6 VREF_1 42 1 B4 A4 - 43 1 E7 C5 NA - 44 1 A2 D6 CS 45 2 D4 E4 DIN_D0 46 2 F5 B3 2 - 47 2 F4 C1 NA - 48 2 G5 E3 1 VREF_2 49 2 D2 G4 1 - www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 2: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays BG560 Package Differential Pin Pair Summary XCV405E and XCV812E Table 2: BG560 Package Differential Pin Pair Summary XCV405E and XCV812E 50 2 H5 E2 NA - 84 3 AG2 AE4 NA - 51 2 H4 G3 VREF_2 85 3 AH1 AE5 VREF_3 52 2 J5 F1 NA - 86 3 AF4 AJ1 NA - 53 2 J4 H3 2 - 87 3 AJ2 AF5 2 - 54 2 K5 H2 NA VREF_2 88 3 AG4 AK2 1 VREF_3 55 2 J3 K4 NA - 89 3 AJ3 AG5 NA - 56 2 L5 K3 D1 90 3 AL1 AH4 NA - 57 2 L4 K2 D2 91 3 AJ4 AH5 INIT 58 2 M5 L3 2 - 92 4 AL4 AJ6 - 59 2 L1 M4 NA - 93 4 AK5 AN3 NA - 60 2 N5 M2 1 VREF_2 94 4 AL5 AJ7 - 61 2 N4 N3 1 - 95 4 AM4 AM5 VREF_4 62 2 N2 P5 NA - 96 4 AK7 AL6 1 - 63 2 P4 P3 D3 97 4 AM6 AN6 - 64 2 P2 R5 2 - 98 4 AL7 AJ9 VREF_4 65 2 R4 R3 NA - 99 4 AN7 AL8 NA - 66 2 R1 T4 NA VREF_2 100 4 AM8 AJ10 1 - 67 2 T5 T3 NA - 101 4 AL9 AM9 1 VREF_4 68 2 T2 U3 IRDY 102 4 AK10 AN9 1 - 69 3 U1 U2 NA - 103 4 AL10 AM10 VREF_4 70 3 V2 V4 NA VREF_3 104 4 AL11 AJ12 - 71 3 V5 V3 NA - 105 4 AN11 AK12 NA - 72 3 W1 W3 2 - 106 4 AL12 AM12 - 73 3 W4 W5 VREF_3 107 4 AK13 AL13 VREF_4 74 3 Y3 Y4 NA - 108 4 AM13 AN13 1 - 75 3 AA1 Y5 1 - 109 4 AJ14 AK14 - 76 3 AA3 AA4 1 VREF_3 110 4 AM14 AN15 VREF_4 77 3 AB3 AA5 NA - 111 4 AJ15 AK15 NA - 78 3 AC1 AB4 2 - 112 4 AL15 AM16 1 - 79 3 AC3 AB5 D5 113 4 AL16 AJ16 1 VREF_4 80 3 AC4 AD3 VREF_3 114 4 AK16 AN17 1 - 81 3 AE1 AC5 1 - 115 5 AM17 AM18 NA GCLK LVDS 1/0 82 3 AD4 AF1 NA VREF_3 116 5 AK18 AJ18 1 VREF_5 83 3 AF2 AD5 NA - 117 5 AN19 AL19 1 - DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 11 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 2: BG560 Package Differential Pin Pair Summary XCV405E and XCV812E Table 2: BG560 Package Differential Pin Pair Summary XCV405E and XCV812E 118 5 AK19 AM20 NA - 152 6 AA31 AA30 1 VREF_6 119 5 AJ19 AL20 VREF_5 153 6 Y29 AA32 1 - 120 5 AN21 AL21 - 154 6 Y30 AA33 NA - 121 5 AJ20 AM22 1 - 155 6 W29 Y32 VREF_6 122 5 AK21 AN23 VREF_5 156 6 W31 W30 2 - 123 5 AJ21 AM23 - 157 6 V30 W33 NA - 124 5 AK22 AM24 NA - 158 6 V31 V29 NA VREF_6 125 5 AL23 AJ22 - 159 6 U33 V32 NA - 126 5 AK23 AL24 VREF_5 160 7 U32 U31 IRDY 127 5 AN26 AJ23 2 - 161 7 T30 T32 NA - 128 5 AK24 AM26 1 VREF_5 162 7 T31 T29 NA VREF_7 129 5 AM27 AJ24 1 - 163 7 R31 R33 NA - 130 5 AL26 AK25 NA - 164 7 R29 R30 2 - 131 5 AN29 AJ25 VREF_5 165 7 P31 P32 VREF_7 132 5 AK26 AM29 - 166 7 P29 P30 NA - 133 5 AM30 AJ26 2 - 167 7 N31 M32 1 - 134 5 AK27 AL29 VREF_5 168 7 L33 N30 1 VREF_7 135 5 AN31 AJ27 - 169 7 L32 M31 NA - 136 5 AM31 AK28 NA - 170 7 L31 M30 2 - 137 6 AJ30 AH29 - 171 7 J33 M29 - 138 6 AH30 AK31 2 - 172 7 K31 L30 VREF_7 139 6 AJ31 AG29 NA - 173 7 H33 L29 1 - 140 6 AG30 AK32 1 VREF_6 174 7 H32 J31 NA VREF_7 141 6 AF29 AH31 1 - 175 7 H31 K29 NA - 142 6 AF30 AH32 NA - 176 7 G32 J30 NA - 143 6 AH33 AE29 VREF_6 177 7 G31 J29 VREF_7 144 6 AE30 AG33 2 - 178 7 E32 E33 NA - 145 6 AF32 AD29 NA - 179 7 F31 H29 2 - 146 6 AD30 AE31 NA VREF_6 180 7 E31 D32 1 VREF_7 147 6 AC29 AE32 NA - 181 7 C33 G29 NA - 148 6 AC30 AD31 VREF_6 182 7 D31 F30 NA - 149 6 AC31 AB29 - 150 6 AB30 AC33 2 - 151 6 AA29 AB31 NA - Module 4 of 4 12 Notes: 1. AO in the XCV812E 2. AO in the XCV405E www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG676 Fine-Pitch Ball Grid Array Package XCV405E Virtex-E Extended Memory devices are available in the FG676 fine-pitch BGA package. Pins labeled I0_VREF can be used as either. If the pin is not used as VREF, it can be used as general I/O. Immediately following Table 3, see Table 4 for FG676 package Differential Pair information. Table 3: Table 3: FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # 0 IO_L11N_YY C9 0 IO_L11P_YY F10 0 IO_L12N_Y A8 0 IO_L12P_Y E10 0 IO_L13N_YY G11 0 IO_L13P_YY D10 0 IO_L14N_YY B10 0 IO_L14P_YY F11 0 IO_L15N C10 0 IO_L15P E11 0 IO_L16N_YY G12 0 IO_L16P_YY D11 0 IO_VREF_L17N_YY C11 0 IO_L17P_YY F12 0 IO_L18N_YY A11 0 IO_L18P_YY E12 0 IO_L19N_Y D12 0 IO_L19P_Y C12 0 IO_VREF_L20N_Y A12 0 IO_L20P_Y H13 0 IO_LVDS_DLL_L21N B13 1 GCK2 C13 1 IO A19 1 IO A20 1 IO A22 1 IO B23 1 IO_LVDS_DLL_L21P F14 1 IO_L22N E14 1 IO_L22P F13 1 IO_L23N_Y D14 1 IO_VREF_L23P_Y A14 1 IO_L24N_Y C14 1 IO_L24P_Y H14 1 IO_L25N_YY G14 FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # 0 GCK3 E13 0 IO A6 0 IO B3 0 IO C6 0 IO C8 0 IO D5 0 IO G13 0 IO_L0N_Y C4 0 IO_L0P_Y F7 0 IO_L1N_YY G8 0 IO_L1P_YY C5 0 IO_VREF_L2N_YY D6 0 IO_L2P_YY E7 0 IO_L3N A4 0 IO_L3P F8 0 IO_L4N B5 0 IO_L4P D7 0 IO_VREF_L5N_YY E8 0 IO_L5P_YY G9 0 IO_L6N_YY A5 0 IO_L6P_YY F9 0 IO_L7N_Y D8 0 IO_L7P_Y C7 0 IO_L8N_Y B7 0 IO_L8P_Y E9 0 IO_L9N A7 0 IO_L9P D9 0 IO_L10N B8 0 IO_VREF_L10P G10 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 13 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 3: FG676 Fine-Pitch BGA -- XCV405E Table 3: FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # 1 IO_L25P_YY C15 1 IO_L43N_Y A23 1 IO_L26N_YY E15 1 IO_L43P_Y D21 1 IO_VREF_L26P_YY D15 1 IO_WRITE_L44N_YY C22 1 IO_L27N_YY C16 1 IO_CS_L44P_YY E21 1 IO_L27P_YY F15 1 IO_L28N G15 2 IO D26 1 IO_L28P D16 2 IO E26 1 IO_L29N_YY E16 2 IO F26 1 IO_L29P_YY A17 2 IO_D1 K24 1 IO_L30N_YY C17 2 IO_DOUT_BUSY_L45P_YY E23 1 IO_L30P_YY E17 2 IO_DIN_D0_L45N_YY F22 1 IO_L31N_Y F16 2 IO_L46P_YY E24 1 IO_L31P_Y D17 2 IO_L46N_YY F20 1 IO_L32N_YY F17 2 IO_L47P_Y G21 1 IO_L32P_YY C18 2 IO_L47N_Y G22 1 IO_L33N_YY A18 2 IO_VREF_L48P_Y F24 1 IO_VREF_L33P_YY G16 2 IO_L48N_Y H20 1 IO_L34N_YY C19 2 IO_L49P_Y E25 1 IO_L34P_YY G17 2 IO_L49N_Y H21 1 IO_L35N_Y D18 2 IO_L50P_YY F23 1 IO_L35P_Y B19 2 IO_L50N_YY G23 1 IO_L36N_Y D19 2 IO_VREF_L51P_YY H23 1 IO_L36P_Y E18 2 IO_L51N_YY J20 1 IO_L37N_YY F18 2 IO_L52P_YY G24 1 IO_L37P_YY B20 2 IO_L52N_YY H22 1 IO_L38N_YY G19 2 IO_L53P_Y J21 1 IO_VREF_L38P_YY C20 2 IO_L53N_Y G25 1 IO_L39N_YY G18 2 IO_L54P_Y G26 1 IO_L39P_YY E19 2 IO_L54N_Y J22 1 IO_L40N_YY A21 2 IO_L55P_YY H24 1 IO_L40P_YY D20 2 IO_L55N_YY J23 1 IO_L41N_YY F19 2 IO_L56P_YY J24 1 IO_VREF_L41P_YY C21 2 IO_VREF_L56N_YY K20 1 IO_L42N_YY B22 2 IO_D2_L57P_YY K22 1 IO_L42P_YY E20 2 IO_L57N_YY K21 Module 4 of 4 14 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 3: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 3: FG676 Fine-Pitch BGA -- XCV405E FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # 2 IO_L58P_YY H25 3 IO_L72N_YY R22 2 IO_L58N_YY K23 3 IO_D4_L73P_YY R24 2 IO_L59P_Y L20 3 IO_VREF_L73N_YY R23 2 IO_L59N_Y J26 3 IO_L74P_Y T24 2 IO_L60P_Y K25 3 IO_L74N_Y R20 2 IO_L60N_Y L22 3 IO_L75P_Y T22 2 IO_L61P_Y L21 3 IO_L75N_Y U24 2 IO_L61N_Y L23 3 IO_L76P_Y T23 2 IO_L62P_Y M20 3 IO_L76N_Y U25 2 IO_L62N_Y L24 3 IO_L77P_Y T21 2 IO_VREF_L63P_YY M23 3 IO_L77N_Y U20 2 IO_D3_L63N_YY M22 3 IO_L78P_YY U22 2 IO_L64P_YY L26 3 IO_L78N_YY V26 2 IO_L64N_YY M21 3 IO_L79P_YY T20 2 IO_L65P_Y N19 3 IO_D5_L79N_YY U23 2 IO_L65N_Y M24 3 IO_D6_L80P_YY V24 2 IO_VREF_L66P_Y M26 3 IO_VREF_L80N_YY U21 2 IO_L66N_Y N20 3 IO_L81P_YY V23 2 IO_L67P_YY N24 3 IO_L81N_YY W24 2 IO_L67N_YY N21 3 IO_L82P_Y V22 2 IO_L68P_YY N23 3 IO_L82N_Y W26 2 IO_L68N_YY N22 3 IO_L83P_Y Y25 3 IO_L83N_Y V21 3 IO P24 3 IO_L84P_YY V20 3 IO W25 3 IO_L84N_YY AA26 3 IO Y26 3 IO_L85P_YY Y24 3 IO AB25 3 IO_VREF_L85N_YY W23 3 IO AC26 3 IO_L86P_Y AA24 3 IO_L69P_YY P21 3 IO_L86N_Y Y23 3 IO_L69N_YY P23 3 IO_L87P_Y AB26 3 IO_L70P_Y P22 3 IO_L87N_Y W21 3 IO_VREF_L70N_Y R25 3 IO_L88P_Y Y22 3 IO_L71P_Y P19 3 IO_VREF_L88N_Y W22 3 IO_L71N_Y P20 3 IO_L89P_Y AA23 3 IO_L72P_YY R21 3 IO_L89N_Y AB24 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 15 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 3: FG676 Fine-Pitch BGA -- XCV405E Table 3: FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # 3 IO_L90P_YY W20 4 IO_L104N_YY AA17 3 IO_L90N_YY AC24 4 IO_L105P_Y AC17 3 IO_D7_L91P_YY AB23 4 IO_L105N_Y AB17 3 IO_INIT_L91N_YY Y21 4 IO_L106P_YY Y16 4 IO_L106N_YY AE17 4 GCK0 AA14 4 IO_L107P_YY AF17 4 IO AC18 4 IO_L107N_YY AA16 4 IO AE20 4 IO_L108P AD17 4 IO AE23 4 IO_L108N AB16 4 IO AF21 4 IO_L109P_YY AC16 4 IO_L92P_YY AC22 4 IO_L109N_YY AD16 4 IO_L92N_YY AD26 4 IO_VREF_L110P_YY AC15 4 IO_L93P_Y AD23 4 IO_L110N_YY Y15 4 IO_L93N_Y AA20 4 IO_L111P_YY AD15 4 IO_L94P_YY Y19 4 IO_L111N_YY AA15 4 IO_L94N_YY AC21 4 IO_L112P_Y W14 4 IO_VREF_L95P_YY AD22 4 IO_L112N_Y AB15 4 IO_L95N_YY AB20 4 IO_VREF_L113P_Y AF15 4 IO_L96P AE22 4 IO_L113N_Y Y14 4 IO_L96N Y18 4 IO_L114P AD14 4 IO_L97P AF22 4 IO_L114N AB14 4 IO_L97N AA19 4 IO_LVDS_DLL_L115P AC14 4 IO_VREF_L98P_YY AD21 4 IO_L98N_YY AB19 5 GCK1 AB13 4 IO_L99P_YY AC20 5 IO AD7 4 IO_L99N_YY AA18 5 IO AD13 4 IO_L100P_Y AC19 5 IO AE4 4 IO_L100N_Y AD20 5 IO AE7 4 IO_L101P_Y AF20 5 IO AF5 4 IO_L101N_Y AB18 5 IO_LVDS_DLL_L115N AF13 4 IO_L102P AD19 5 IO_L116P_Y AA13 4 IO_L102N Y17 5 IO_VREF_L116N_Y AF12 4 IO_L103P AE19 5 IO_L117P_Y AC13 4 IO_VREF_L103N AD18 5 IO_L117N_Y W13 4 IO_L104P_YY AF19 5 IO_L118P_YY AA12 Module 4 of 4 16 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 3: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG676 Fine-Pitch BGA -- XCV405E Table 3: FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # 5 IO_L118N_YY AD12 5 IO_L136P_Y AF4 5 IO_L119P_YY AC12 5 IO_L136N_Y AC5 5 IO_VREF_L119N_YY AB12 5 IO_L120P_YY AD11 6 IO P3 5 IO_L120N_YY Y12 6 IO AA3 5 IO_L121P AB11 6 IO W3 5 IO_L121N AD10 6 IO Y2 5 IO_L122P_YY AC11 6 IO Y6 5 IO_L122N_YY AE10 6 IO_L137N_YY AA5 5 IO_L123P_YY AC10 6 IO_L137P_YY AC3 5 IO_L123N_YY AA11 6 IO_L138N_YY AC2 5 IO_L124P_Y Y11 6 IO_L138P_YY AB4 5 IO_L124N_Y AD9 6 IO_L139N_Y W6 5 IO_L125P_YY AB10 6 IO_L139P_Y AA4 5 IO_L125N_YY AF9 6 IO_VREF_L140N_Y AB3 5 IO_L126P_YY AD8 6 IO_L140P_Y Y5 5 IO_VREF_L126N_YY AA10 6 IO_L141N_Y AB2 5 IO_L127P_YY AE8 6 IO_L141P_Y V7 5 IO_L127N_YY Y10 6 IO_L142N_YY AB1 5 IO_L128P_Y AC9 6 IO_L142P_YY Y4 5 IO_L128N_Y AF8 6 IO_VREF_L143N_YY V5 5 IO_L129P_Y AF7 6 IO_L143P_YY W5 5 IO_L129N_Y AB9 6 IO_L144N_YY AA1 5 IO_L130P_YY AA9 6 IO_L144P_YY V6 5 IO_L130N_YY AF6 6 IO_L145N_Y W4 5 IO_L131P_YY AC8 6 IO_L145P_Y Y3 5 IO_VREF_L131N_YY AC7 6 IO_L146N_Y Y1 5 IO_L132P_YY AD6 6 IO_L146P_Y U7 5 IO_L132N_YY Y9 6 IO_L147N_YY W1 5 IO_L133P_YY AE5 6 IO_L147P_YY V4 5 IO_L133N_YY AA8 6 IO_L148N_YY W2 5 IO_L134P_YY AC6 6 IO_VREF_L148P_YY U6 5 IO_VREF_L134N_YY AB8 6 IO_L149N_YY V3 5 IO_L135P_YY AD5 6 IO_L149P_YY T5 5 IO_L135N_YY AA7 6 IO_L150N_YY U5 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 17 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 3: Table 3: FG676 Fine-Pitch BGA -- XCV405E FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # 6 IO_L150P_YY U4 7 IO_L165N_YY M4 6 IO_L151N_Y T7 7 IO_VREF_L165P_YY M5 6 IO_L151P_Y U3 7 IO_L166N_Y L3 6 IO_L152N_Y U2 7 IO_L166P_Y L7 6 IO_L152P_Y T6 7 IO_L167N_Y L6 6 IO_L153N_Y U1 7 IO_L167P_Y K2 6 IO_L153P_Y T4 7 IO_L168N_Y L4 6 IO_L154N_Y R7 7 IO_L168P_Y K1 6 IO_L154P_Y T3 7 IO_L169N_Y K3 6 IO_VREF_L155N_YY R4 7 IO_L169P_Y L5 6 IO_L155P_YY R6 7 IO_L170N_YY K5 6 IO_L156N_YY R3 7 IO_L170P_YY J3 6 IO_L156P_YY R5 7 IO_L171N_YY K4 6 IO_L157N_Y P8 7 IO_L171P_YY J4 6 IO_L157P_Y P7 7 IO_L172N_YY H3 6 IO_VREF_L158N_Y R1 7 IO_VREF_L172P_YY K6 6 IO_L158P_Y P6 7 IO_L173N_YY K7 6 IO_L159N_YY P5 7 IO_L173P_YY G3 6 IO_L159P_YY P4 7 IO_L174N_Y J5 7 IO_L174P_Y H1 7 IO D2 7 IO_L175N_Y G2 7 IO D3 7 IO_L175P_Y J6 7 IO E1 7 IO_L176N_YY J7 7 IO G1 7 IO_L176P_YY F1 7 IO H2 7 IO_L177N_YY H4 7 IO_L160N_YY N5 7 IO_VREF_L177P_YY G4 7 IO_L160P_YY N8 7 IO_L178N_Y F3 7 IO_L161N_YY N6 7 IO_L178P_Y H5 7 IO_L161P_YY N3 7 IO_L179N_Y E2 7 IO_L162N_Y N4 7 IO_L179P_Y H6 7 IO_VREF_L162P_Y M2 7 IO_L180N_Y G5 7 IO_L163N_Y N7 7 IO_VREF_L180P_Y F4 7 IO_L163P_Y M7 7 IO_L181N_Y H7 7 IO_L164N_YY M6 7 IO_L181P_Y G6 7 IO_L164P_YY M3 7 IO_L182N_YY E3 Module 4 of 4 18 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 3: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 3: FG676 Fine-Pitch BGA -- XCV405E FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # 7 IO_L182P_YY E4 4 NC AE15 4 NC AF14 2 CCLK D24 4 NC AF16 3 DONE AB21 4 NC AF18 NA DXN AB7 4 NC AF23 NA DXP Y8 5 NC AE12 NA M0 AD4 5 NC AF3 NA M1 W7 5 NC AF10 NA M2 AB6 5 NC AF11 NA PROGRAM AA22 5 NC Y13 NA TCK E6 6 NC AC1 NA TDI D22 6 NC P1 2 TDO C23 6 NC R2 NA TMS F5 6 NC T1 6 NC V1 0 NC A9 7 NC D1 0 NC A10 7 NC J1 0 NC B4 7 NC L1 0 NC B12 7 NC M1 0 NC D13 7 NC N1 1 NC A13 NA NC T25 1 NC A16 NA NC T2 1 NC A24 NA NC P2 1 NC B15 NA NC N25 1 NC B17 NA NC L25 2 NC D25 NA NC L2 2 NC H26 NA NC F6 2 NC K26 NA NC F25 2 NC M25 NA NC F21 2 NC N26 NA NC F2 3 NC AC25 NA NC C26 3 NC P26 NA NC C25 3 NC R26 NA NC C2 3 NC T26 NA NC C1 3 NC U26 NA NC B6 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 19 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 3: Table 3: FG676 Fine-Pitch BGA -- XCV405E FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # NA NC B26 NA VCCINT J10 NA NC B24 NA VCCINT J11 NA NC B21 NA VCCINT J16 NA NC B16 NA VCCINT J17 NA NC B11 NA VCCINT J18 NA NC B1 NA VCCINT K9 NA NC AF25 NA VCCINT K18 NA NC AF24 NA VCCINT L9 NA NC AF2 NA VCCINT L18 NA NC AE6 NA VCCINT T9 NA NC AE3 NA VCCINT T18 NA NC AE26 NA VCCINT U9 NA NC AE24 NA VCCINT U18 NA NC AE21 NA VCCINT V9 NA NC AE16 NA VCCINT V10 NA NC AE14 NA VCCINT V11 NA NC AE11 NA VCCINT V16 NA NC AE1 NA VCCINT V17 NA NC AD25 NA VCCINT V18 NA NC AD2 NA VCCINT Y7 NA NC AD1 NA VCCINT Y20 NA NC AA6 NA VCCINT W8 NA NC AA25 NA VCCINT W19 NA NC AA21 NA NC AA2 0 VCCO J13 NA NC A3 0 VCCO J12 NA NC A25 0 VCCO H9 NA NC A2 0 VCCO H12 NA NC A15 0 VCCO H11 0 VCCO H10 NA VCCINT G7 1 VCCO J15 NA VCCINT G20 1 VCCO J14 NA VCCINT H8 1 VCCO H18 NA VCCINT H19 1 VCCO H17 NA VCCINT J9 1 VCCO H16 Module 4 of 4 20 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 3: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG676 Fine-Pitch BGA -- XCV405E Table 3: FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # 1 VCCO H15 7 VCCO K8 2 VCCO N18 7 VCCO J8 2 VCCO M19 2 VCCO M18 NA GND V25 2 VCCO L19 NA GND V2 2 VCCO K19 NA GND U17 2 VCCO J19 NA GND U16 3 VCCO V19 NA GND U15 3 VCCO U19 NA GND U14 3 VCCO T19 NA GND U13 3 VCCO R19 NA GND U12 3 VCCO R18 NA GND U11 3 VCCO P18 NA GND U10 4 VCCO W18 NA GND T17 4 VCCO W17 NA GND T16 4 VCCO W16 NA GND T15 4 VCCO W15 NA GND T14 4 VCCO V15 NA GND T13 4 VCCO V14 NA GND T12 5 VCCO W9 NA GND T11 5 VCCO W12 NA GND T10 5 VCCO W11 NA GND R17 5 VCCO W10 NA GND R16 5 VCCO V13 NA GND R15 5 VCCO V12 NA GND R14 6 VCCO V8 NA GND R13 6 VCCO U8 NA GND R12 6 VCCO T8 NA GND R11 6 VCCO R9 NA GND R10 6 VCCO R8 NA GND P25 6 VCCO P9 NA GND P17 7 VCCO N9 NA GND P16 7 VCCO M9 NA GND P15 7 VCCO M8 NA GND P14 7 VCCO L8 NA GND P13 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 21 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 3: FG676 Fine-Pitch BGA -- XCV405E Table 3: FG676 Fine-Pitch BGA -- XCV405E Bank Pin Description Pin # Bank Pin Description Pin # NA GND P12 NA GND K10 NA GND P11 NA GND J25 NA GND P10 NA GND J2 NA GND N2 NA GND E5 NA GND N17 NA GND E22 NA GND N16 NA GND D4 NA GND N15 NA GND D23 NA GND N14 NA GND C3 NA GND N13 NA GND C24 NA GND N12 NA GND B9 NA GND N11 NA GND B25 NA GND N10 NA GND B2 NA GND M17 NA GND B18 NA GND M16 NA GND B14 NA GND M15 NA GND AF26 NA GND M14 NA GND AF1 NA GND M13 NA GND AE9 NA GND M12 NA GND AE25 NA GND M11 NA GND AE2 NA GND M10 NA GND AE18 NA GND L17 NA GND AE13 NA GND L16 NA GND AD3 NA GND L15 NA GND AD24 NA GND L14 NA GND AC4 NA GND L13 NA GND AC23 NA GND L12 NA GND AB5 NA GND L11 NA GND AB22 NA GND L10 NA GND A26 NA GND K17 NA GND A1 NA GND K16 NA GND K15 NA GND K14 NA GND K13 NA GND K12 NA GND K11 Module 4 of 4 22 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG676 Differential Pin Pairs Table 4: Virtex-E Extended Memory devices have differential pin pairs that can also provide other functions when not used as a differential pair. A in the AO column indicates that the pin pair can be used as an asynchronous output for all devices provided in this package. FG676 Fine-Pitch BGA Differential Pin Pair Summary -- XCV405E P N Other Pair Bank Pin Pin AO Functions 16 0 D11 G12 - Pairs with a note number in the AO column are device dependent. They can have asynchronous outputs if the pin pair is in the same CLB row and column in the device. Numbers in this column refer to footnotes that indicate which devices have pin pairs that can be asynchronous outputs. The Other Functions column indicates alternative function(s) not available when the pair is used as a differential pair or differential clock. 17 0 F12 C11 VREF 18 0 E12 A11 - 19 0 C12 D12 NA - 20 0 H13 A12 NA VREF 21 1 F14 B13 NA IO_LVDS_DLL 22 1 F13 E14 NA - Table 4: 23 1 A14 D14 NA VREF 24 1 H14 C14 NA - 25 1 C15 G14 - 26 1 D15 E15 VREF 27 1 F15 C16 - 28 1 D16 G15 - - 29 1 A17 E16 - 30 1 E17 C17 - 31 1 D17 F16 NA - 32 1 C18 F17 - 33 1 G16 A18 VREF Pair FG676 Fine-Pitch BGA Differential Pin Pair Summary -- XCV405E Bank P N Pin Pin Other AO Functions Global Differential Clock 3 0 E13 B13 NA IO_DLL_L21N 2 1 C13 F14 NA IO_DLL_L21P 1 5 AB13 AF13 NA IO_DLL_L115 N 0 4 AA14 AC14 NA IO_DLL_L115P IOLVDS Total Pairs: 183, Asynchronous Output Pairs: 97 0 0 F7 C4 NA - 34 1 G17 C19 - 1 0 C5 G8 - 35 1 B19 D18 NA - 2 0 E7 D6 VREF 36 1 E18 D19 NA - 3 0 F8 A4 NA - 37 1 B20 F18 - 4 0 D7 B5 NA - 38 1 C20 G19 VREF 5 0 G9 E8 VREF 39 1 E19 G18 - 6 0 F9 A5 - 40 1 D20 A21 - 7 0 C7 D8 NA - 41 1 C21 F19 VREF 8 0 E9 B7 NA - 42 1 E20 B22 - 9 0 D9 A7 NA - 43 1 D21 A23 2 - 10 0 G10 B8 NA VREF 44 1 E21 C22 CS 11 0 F10 C9 - 45 2 E23 F22 DIN, D0 12 0 E10 A8 NA - 46 2 E24 F20 - 13 0 D10 G11 - 47 2 G21 G22 2 - 14 0 F11 B10 - 48 2 F24 H20 1 VREF 15 0 E11 C10 NA - 49 2 E25 H21 1 - DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 23 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 4: FG676 Fine-Pitch BGA Differential Pin Pair Summary -- XCV405E P N Table 4: FG676 Fine-Pitch BGA Differential Pin Pair Summary -- XCV405E Other P N Other Pair Bank Pin Pin AO Functions Pair Bank Pin Pin AO Functions 50 2 F23 G23 - 84 3 V20 AA26 - 51 2 H23 J20 VREF 85 3 Y24 W23 VREF 52 2 G24 H22 - 86 3 AA24 Y23 NA - 53 2 J21 G25 2 - 87 3 AB26 W21 NA - 54 2 G26 J22 1 - 88 3 Y22 W22 NA VREF 55 2 H24 J23 - 89 3 AA23 AB24 NA - 56 2 J24 K20 VREF 90 3 W20 AC24 - 57 2 K22 K21 D2 91 3 AB23 Y21 INIT 58 2 H25 K23 - 92 4 AC22 AD26 - 59 2 L20 J26 2 - 93 4 AD23 AA20 NA1 - 60 2 K25 L22 1 - 94 4 Y19 AC21 - 61 2 L21 L23 1 - 95 4 AD22 AB20 VREF 62 2 M20 L24 1 - 96 4 AE22 Y18 NA - 63 2 M23 M22 D3 97 4 AF22 AA19 NA - 64 2 L26 M21 - 98 4 AD21 AB19 VREF 65 2 N19 M24 2 - 99 4 AC20 AA18 - 66 2 M26 N20 1 VREF 100 4 AC19 AD20 NA - 67 2 N24 N21 - 101 4 AF20 AB18 NA - 68 2 N23 N22 - 102 4 AD19 Y17 NA - 69 3 P21 P23 - 103 4 AE19 AD18 NA VREF 70 3 P22 R25 1 VREF 104 4 AF19 AA17 - 71 3 P19 P20 2 - 105 4 AC17 AB17 NA - 72 3 R21 R22 - 106 4 Y16 AE17 - 73 3 R24 R23 VREF 107 4 AF17 AA16 - 74 3 T24 R20 1 - 108 4 AD17 AB16 NA - 75 3 T22 U24 1 - 109 4 AC16 AD16 - 76 3 T23 U25 1 - 110 4 AC15 Y15 VREF 77 3 T21 U20 2 - 111 4 AD15 AA15 - 78 3 U22 V26 - 112 4 W14 AB15 NA - 79 3 T20 U23 D5 113 4 AF15 Y14 NA VREF 80 3 V24 U21 VREF 114 4 AD14 AB14 NA - 81 3 V23 W24 - 115 5 AC14 AF13 NA IO_LVDS_DLL 82 3 V22 W26 NA - 116 5 AA13 AF12 NA VREF 83 3 Y25 V21 NA - 117 5 AC13 W13 NA - Module 4 of 4 24 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 4: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG676 Fine-Pitch BGA Differential Pin Pair Summary -- XCV405E P N Table 4: FG676 Fine-Pitch BGA Differential Pin Pair Summary -- XCV405E Other P N Other Pair Bank Pin Pin AO Functions Pair Bank Pin Pin AO Functions 118 5 AA12 AD12 - 152 6 T6 U2 NA - 119 5 AC12 AB12 VREF 153 6 T4 U1 NA - 120 5 AD11 Y12 - 154 6 T3 R7 NA - 121 5 AB11 AD10 NA - 155 6 R6 R4 VREF 122 5 AC11 AE10 - 156 6 R5 R3 - 123 5 AC10 AA11 - 157 6 P7 P8 NA - 124 5 Y11 AD9 NA - 158 6 P6 R1 NA VREF 125 5 AB10 AF9 - 159 6 P4 P5 - 126 5 AD8 AA10 VREF 160 7 N8 N5 - 127 5 AE8 Y10 - 161 7 N3 N6 - 128 5 AC9 AF8 NA - 162 7 M2 N4 NA VREF 129 5 AF7 AB9 NA - 163 7 M7 N7 NA - 130 5 AA9 AF6 - 164 7 M3 M6 - 131 5 AC8 AC7 VREF 165 7 M5 M4 VREF 132 5 AD6 Y9 - 166 7 L7 L3 NA - 133 5 AE5 AA8 - 167 7 K2 L6 NA - 134 5 AC6 AB8 VREF 168 7 K1 L4 NA - 135 5 AD5 AA7 - 169 7 L5 K3 NA - 136 5 AF4 AC5 NA - 170 7 J3 K5 - 137 6 AC3 AA5 - 171 7 J4 K4 - 138 6 AB4 AC2 - 172 7 K6 H3 VREF 139 6 AA4 W6 NA - 173 7 G3 K7 - 140 6 Y5 AB3 NA VREF 174 7 H1 J5 NA - 141 6 V7 AB2 NA - 175 7 J6 G2 NA - 142 6 Y4 AB1 - 176 7 F1 J7 - 143 6 W5 V5 VREF 177 7 G4 H4 VREF 144 6 V6 AA1 - 178 7 H5 F3 NA - 145 6 Y3 W4 NA - 179 7 H6 E2 NA - 146 6 U7 Y1 NA - 180 7 F4 G5 NA VREF 147 6 V4 W1 - 181 7 G6 H7 NA - 148 6 U6 W2 VREF 182 7 E4 E3 - 149 6 T5 V3 - 150 6 U4 U5 - 151 6 U3 T7 NA - DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 25 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG900 Fine-Pitch Ball Grid Array Package The XCV812E Virtex-E Extended Memory devices are available in the FG900 fine-pitch BGA package. Pins labeled I0_VREF can be used as either. If the pin is not used as VREF, it can be used as general I/O. Immediately following Table 5, see Table 6 for FG900 package Differential Pair information. Table 5: Table 5: Bank Description Pin 0 IO_L8N_YY G9 0 IO_L8P_YY E8 0 IO_VREF_L9N_YY A6 0 IO_L9P_YY J11 0 IO_L10N C7 0 IO_L10P B7 0 IO_L11N C8 0 IO_L11P H10 0 IO_L12N_YY G10 0 IO_L12P_YY F10 0 IO_VREF_L13N_YY A8 0 IO_L13P_YY H11 0 IO_L15N B9 0 IO_L15P J12 0 IO_L17N G11 0 IO_L17P B10 0 IO_L19N_Y H13 0 IO_L19P_Y F11 0 IO_L20N_Y E11 0 IO_L20P_Y D11 0 IO_L22N_YY F12 0 IO_L22P_YY C11 0 IO_VREF_L23N_YY A10 0 IO_L23P_YY D12 0 IO_L24N E12 0 IO_L24P A11 0 IO_L25N G13 0 IO_L25P B12 0 IO_L26N_YY A12 0 IO_L26P_YY K13 0 IO_VREF_L27N_YY F13 0 IO_L27P_YY B13 0 IO_L28N G14 0 IO_L28P E13 FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin 0 GCK3 C15 0 IO A7 0 IO A13 0 IO C9 0 IO C10 0 IO D10 0 IO E6 0 IO F7 0 IO F9 0 IO F15 0 IO G12 0 IO G15 0 IO H15 0 IO J10 0 IO K12 0 IO_VREF A9 0 IO_L1N_Y D5 0 IO_L1P_Y G8 0 IO_L2N_Y A3 0 IO_L2P_Y H9 0 IO_L4N_YY A4 0 IO_L4P_YY D6 0 IO_VREF_L5N_YY E7 0 IO_L5P_YY B5 0 IO_L6N A5 0 IO_L6P F8 0 IO_L7N D7 0 IO_L7P N11 Module 4 of 4 26 FG900 Fine-Pitch BGA Package -- XCV812E www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 5: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin 0 IO_L29N D14 1 IO_L43P G18 0 IO_L29P B14 1 IO_L44N D19 0 IO_L30N_YY A14 1 IO_L44P H18 0 IO_L30P_YY J14 1 IO_L45N_YY F18 0 IO_VREF_L31N_YY K14 1 IO_VREF_L45P_YY F19 0 IO_L31P_YY J15 1 IO_L46N_YY B20 0 IO_LVDS_DLL_L34N A15 1 IO_L46P_YY K17 1 IO_L48N_Y G19 1 GCk2 E15 1 IO_L48P_Y C20 1 IO B18 1 IO_L49N_Y K18 1 IO B21 1 IO_L49P_Y E20 1 IO B28 1 IO_L51N_YY F20 1 IO C23 1 IO_L51P_YY A21 1 IO C26 1 IO_L52N_YY C21 1 IO D20 1 IO_VREF_L52P_YY A22 1 IO D23 1 IO_L53N H19 1 IO_LVDS_DLL_L34P E16 1 IO_L53P B22 1 IO_L35N B16 1 IO_L54N E21 1 IO_L35P F16 1 IO_L54P D22 1 IO_L36N A16 1 IO_L55N_YY F21 1 IO_L36P H16 1 IO_VREF_L55P_YY C22 1 IO_L37N_YY C16 1 IO_L56N_YY H20 1 IO_VREF_L37P_YY K15 1 IO_L56P_YY E22 1 IO_L38N_YY K16 1 IO_L57N G21 1 IO_L38P_YY G16 1 IO_L57P A23 1 IO_L39N A17 1 IO_L58N A24 1 IO_L39P E17 1 IO_L58P K19 1 IO_L40N F17 1 IO_L59N_YY C24 1 IO_L40P C17 1 IO_VREF_L59P_YY B24 1 IO_L41N_YY E18 1 IO_L60N_YY H21 1 IO_VREF_L41P_YY A18 1 IO_L60P_YY G22 1 IO_L42N_YY D18 1 IO_L61N E23 1 IO_L42P_YY A19 1 IO_L61P C25 1 IO_L43N B19 1 IO_L62N D24 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 27 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin 1 IO_L62P A26 2 IO_L76N_Y F28 1 IO_L63N_YY B26 2 IO_L77P_YY G28 1 IO_VREF_L63P_YY K20 2 IO_L77N_YY E30 1 IO_L64N_YY D25 2 IO_L78P G27 1 IO_L64P_YY J21 2 IO_L78N E29 1 IO_L66N_Y B27 2 IO_L79P K23 1 IO_L66P_Y G23 2 IO_L79N H26 1 IO_L67N_Y A27 2 IO_VREF_L80P_YY F30 1 IO_L67P_Y F24 2 IO_L80N_YY L22 1 IO_WRITE_L69N_YY K21 2 IO_L81P_YY H27 1 IO_CS_L69P_YY C27 2 IO_L81N_YY G29 2 IO_L82P_Y G30 2 IO D28 2 IO_L82N_Y M21 2 IO F27 2 IO_L83P J24 2 IO H25 2 IO_L83N J26 2 IO J25 2 IO_VREF_L84P H30 2 IO J28 2 IO_L84N L23 2 IO K28 2 IO_L86P J29 2 IO K30 2 IO_L86N K24 2 IO M23 2 IO_VREF J30 2 IO N20 2 IO_D1_L88P M22 2 IO N23 2 IO_D2_L88N K29 2 IO R27 2 IO_L90P_Y N21 2 IO R28 2 IO_L90N_Y K25 2 IO R30 2 IO_L91P L24 2 IO_DOUT_BUSY_L70P_YY J22 2 IO_L91N L27 2 IO_DIN_D0_L70N_YY E27 2 IO_L93P L26 2 IO_L72P_Y G25 2 IO_L93N L28 2 IO_L72N_Y E25 2 IO_VREF_L94P_Y L30 2 IO_L73P E28 2 IO_L94N_Y M27 2 IO_L73N C30 2 IO_L95P_YY M26 2 IO_L75P D30 2 IO_L95N_YY M29 2 IO_L75N J23 2 IO_L96P N29 2 IO_VREF_L76P_Y L21 2 IO_L96N M30 Module 4 of 4 28 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 5: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin 2 IO_L97P N25 3 IO_L112P_YY U25 2 IO_L97N N27 3 IO_L112N_YY V27 2 IO_VREF_L98P_YY N30 3 IO_D4_L113P_YY U24 2 IO_D3_L98N_YY P21 3 IO_VREF_L113N_YY V29 2 IO_L99P_YY N26 3 IO_L114P W30 2 IO_L99N_YY P28 3 IO_L114N U22 2 IO_L100P_Y P29 3 IO_L115P U21 2 IO_L100N_Y N24 3 IO_L115N W29 2 IO_L101P P22 3 IO_L116P_YY V26 2 IO_L101N R26 3 IO_L116N_YY W27 2 IO_VREF_2_L102P P25 3 IO_L117P_Y W26 2 IO_L102N R29 3 IO_VREF_L117N_Y Y29 2 IO_L104P R25 3 IO_L118P W25 2 IO_L104N T30 3 IO_L118N Y30 2 IO_L106P R24 3 IO_L120P AA30 3 IO_L120N W24 3 IO T24 3 IO_L121P_Y AA29 3 IO V24 3 IO_L121N_Y V20 3 IO Y21 3 IO_L123P_YY Y26 3 IO Y27 3 IO_D5_L123N_YY AB30 3 IO AB27 3 IO_D6_L124P_YY V21 3 IO AF28 3 IO_VREF_L124N_YY AA28 3 IO AG30 3 IO_L125P Y25 3 IO_L106N U29 3 IO_L125N AA27 3 IO_L107P R22 3 IO_L126P W22 3 IO_L107N T27 3 IO_L126N Y23 3 IO_L108P R23 3 IO_L127P Y24 3 IO_L108N T28 3 IO_VREF_L127N AB28 3 IO_L109P T21 3 IO_L128P AC30 3 IO_VREF_L109N T25 3 IO_L128N AA25 3 IO_L110P U28 3 IO_L129P_Y W21 3 IO_L110N U30 3 IO_L129N_Y AA24 3 IO_L111P_Y T23 3 IO_L130P_YY AB26 3 IO_L111N_Y U27 3 IO_L130N_YY AD30 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 29 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin 3 IO_L131P_YY Y22 4 IO_L142N_YY AK28 3 IO_VREF_L131N_YY AC27 4 IO_L144P_Y AD23 3 IO_L132P AD28 4 IO_L144N_Y AJ27 3 IO_L132N AB25 4 IO_L145P_Y AB21 3 IO_L133P AC26 4 IO_L145N_Y AF25 3 IO_L133N AE30 4 IO_L147P_YY AA21 3 IO_L134P_YY AD27 4 IO_L147N_YY AG25 3 IO_L134N_YY AF30 4 IO_VREF_4_L148P_YY AJ26 3 IO_L135P_Y AF29 4 IO_L148N_YY AD22 3 IO_VREF_L135N_Y AB24 4 IO_L149P AA20 3 IO_L136P AB23 4 IO_L149N AH25 3 IO_L136N AE28 4 IO_L150P AC21 3 IO_L138P AE26 4 IO_L150N AF24 3 IO_L138N AG29 4 IO_L151P_YY AG24 3 IO_L139P_Y AH30 4 IO_L151N_YY AK26 3 IO_L139N_Y AC24 4 IO_VREF_4_L152P_YY AJ24 3 IO_D7_L141P_YY AH29 4 IO_L152N_YY AF23 3 IO_INIT_L141N_YY AA22 4 IO_L153P AE23 4 IO_L153N AB20 4 GCK0 AJ16 4 IO_L154P AC20 4 IO AB19 4 IO_L154N AG23 4 IO AC16 4 IO_L155P_YY AF22 4 IO AC19 4 IO_L155N_YY AE22 4 IO AD19 4 IO_VREF_4_L156P_YY AJ22 4 IO AD20 4 IO_L156N_YY AG22 4 IO AE21 4 IO_L158P AA19 4 IO AF19 4 IO_L158N AF21 4 IO AH17 4 IO_L160P AG21 4 IO AH23 4 IO_L160N AK23 4 IO AH26 4 IO_L162P_Y AE20 4 IO AH27 4 IO_L162N_Y AJ21 4 IO AK18 4 IO_L163P_Y AG20 4 IO_VREF_4 AA18 4 IO_L163N_Y AF20 4 IO_L142P_YY AF27 4 IO_L165P_YY AJ20 Module 4 of 4 30 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 5: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin 4 IO_L165N_YY AE19 5 IO_L179N AF15 4 IO_VREF_4_L166P_YY AK22 5 IO_L180P_YY AA15 4 IO_L166N_YY AH20 5 IO_VREF_5_L180N_YY AF14 4 IO_L167P AG19 5 IO_L181P_YY AH15 4 IO_L167N AB17 5 IO_L181N_YY AK15 4 IO_L168P AJ19 5 IO_L182P AB14 4 IO_L168N AD17 5 IO_L182N AF13 4 IO_L169P_YY AA16 5 IO_L183P AH14 4 IO_L169N_YY AA17 5 IO_L183N AJ14 4 IO_VREF_4_L170P_YY AK21 5 IO_L184P_YY AE14 4 IO_L170N_YY AB16 5 IO_VREF_5_L184N_YY AG13 4 IO_L171P AG18 5 IO_L185P_YY AK13 4 IO_L171N AK20 5 IO_L185N_YY AD13 4 IO_L172P AK19 5 IO_L186P AE13 4 IO_L172N AD16 5 IO_L186N AF12 4 IO_L173P_YY AE16 5 IO_L187P AC13 4 IO_L173N_YY AE17 5 IO_L187N AA13 4 IO_VREF_4_L174P_YY AG17 5 IO_L188P_YY AA12 4 IO_L174N_YY AJ17 5 IO_VREF_5_L188N_YY AJ12 4 IO_L176P AG16 5 IO_L189P_YY AB12 4 IO_L176N AK17 5 IO_L189N_YY AE11 4 IO_LVDS_DLL_L177P AF16 5 IO_L191P_Y AG11 5 IO_L191N_Y AF11 5 GCK1 AK16 5 IO_L192P_Y AH11 5 IO AD8 5 IO_L192N_Y AJ11 5 IO AD14 5 IO_L194P_YY AD12 5 IO AE10 5 IO_L194N_YY AK11 5 IO AE12 5 IO_L195P_YY AJ10 5 IO AG15 5 IO_VREF_5_L195N_YY AC12 5 IO AH5 5 IO_L196P AK10 5 IO AH8 5 IO_L196N AD11 5 IO AK12 5 IO_L197P AJ9 5 IO_LVDS_DLL_L177N AH16 5 IO_L197N AE9 5 IO_L179P AB15 5 IO_L198P_YY AH10 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 31 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin 5 IO_VREF_5_L198N_YY AF9 6 IO AD6 5 IO_L199P_YY AH9 6 IO AG2 5 IO_L199N_YY AK9 6 IO_L212N_YY AF3 5 IO_L200P AF8 6 IO_L212P_YY AC6 5 IO_L200N AB11 6 IO_L214N_Y AB9 5 IO_L201P AC11 6 IO_L214P_Y AE4 5 IO_L201N AG8 6 IO_L215N AE3 5 IO_L202P_YY AK8 6 IO_L215P AH1 5 IO_VREF_5_L202N_YY AF7 6 IO_L217N AG1 5 IO_L203P_YY AG7 6 IO_L217P AA10 5 IO_L203N_YY AK7 6 IO_VREF_L218N_Y AA9 5 IO_L204P AJ7 6 IO_L218P_Y AD4 5 IO_L204N AD10 6 IO_L219N_YY AD5 5 IO_L205P AH6 6 IO_L219P_YY AD2 5 IO_L205N AC10 6 IO_L220N AD3 5 IO_L206P_YY AD9 6 IO_L220P AF2 5 IO_VREF_5_L206N_YY AG6 6 IO_L221N AA8 5 IO_L207P_YY AB10 6 IO_L221P AA7 5 IO_L207N_YY AJ5 6 IO_VREF_L222N_YY AF1 5 IO_L209P_Y AC9 6 IO_L222P_YY Y9 5 IO_L209N_Y AJ4 6 IO_L223N_YY AB6 5 IO_L210P_Y AG5 6 IO_L223P_YY AC4 5 IO_L210N_Y AK4 6 IO_L224N_Y AE1 6 IO_L224P_Y W8 6 IO T6 6 IO_L225N Y8 6 IO U1 6 IO_L225P AB4 6 IO U6 6 IO_VREF_L226N AB3 6 IO V7 6 IO_L226P W9 6 IO V8 6 IO_L228N AB1 6 IO W10 6 IO_L228P V10 6 IO Y10 6 IO_VREF AC1 6 IO AA2 6 IO_L230N V11 6 IO AA4 6 IO_L230P AA3 6 IO AD1 6 IO_L232N_Y W7 Module 4 of 4 32 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 5: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin 6 IO_L232P_Y AA6 7 IO N8 6 IO_L233N Y6 7 IO R5 6 IO_L233P Y4 7 IO_L247P R10 6 IO_L235N Y3 7 IO_L249N R8 6 IO_L235P Y2 7 IO_L249P R4 6 IO_VREF_L236N_Y Y5 7 IO_L250N R7 6 IO_L236P_Y W5 7 IO_L250P R3 6 IO_L237N_YY W4 7 IO_L251N P10 6 IO_L237P_YY W6 7 IO_VREF_L251P P6 6 IO_L238N V6 7 IO_L252N P5 6 IO_L238P W2 7 IO_L252P P2 6 IO_L239N U9 7 IO_L253N_Y P7 6 IO_L239P V4 7 IO_L253P_Y P4 6 IO_VREF_L240N_YY AB2 7 IO_L254N_YY N4 6 IO_L240P_YY T8 7 IO_L254P_YY R2 6 IO_L241N_YY U5 7 IO_L255N_YY N7 6 IO_L241P_YY W1 7 IO_VREF_L255P_YY P1 6 IO_L242N_Y Y1 7 IO_L256N M6 6 IO_L242P_Y T9 7 IO_L256P N6 6 IO_L243N T7 7 IO_L257N N5 6 IO_L243P U3 7 IO_L257P N1 6 IO_VREF_L244N T5 7 IO_L258N_YY M4 6 IO_L244P V2 7 IO_L258P_YY M5 6 IO_L246N T4 7 IO_L259N_Y M2 6 IO_L246P U2 7 IO_VREF_L259P_Y M1 6 IO_L247N T1 7 IO_L260N L4 7 IO_L260P L2 7 IO D1 7 IO_L262N L1 7 IO E3 7 IO_L262P M8 7 IO J4 7 IO_L263N_Y K2 7 IO J6 7 IO_L263P_Y M9 7 IO K10 7 IO_L265N_YY K5 7 IO L3 7 IO_L265P_YY K1 7 IO M7 7 IO_L266N_YY L6 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 33 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin 7 IO_VREF_L266P_YY K3 NA M0 AF4 7 IO_L267N L7 NA M1 AC7 7 IO_L267P K4 NA M2 AK3 7 IO_L268N L8 NA PROGRAM AG28 7 IO_L268P J5 NA TCK B3 7 IO_L269N K6 NA TDI H22 7 IO_VREF_L269P H4 2 TDO D26 7 IO_L270N H1 NA TMS C1 7 IO_L270P K7 7 IO_L271N_Y J7 NA VCCINT L11 7 IO_L271P_Y J2 NA VCCINT L12 7 IO_L272N_YY H5 NA VCCINT L19 7 IO_L272P_YY G2 NA VCCINT L20 7 IO_L273N_YY L9 NA VCCINT M11 7 IO_VREF_L273P_YY G5 NA VCCINT M12 7 IO_L274N F3 NA VCCINT M19 7 IO_L274P K8 NA VCCINT M20 7 IO_L275N G3 NA VCCINT N13 7 IO_L275P E1 NA VCCINT N14 7 IO_L276N_YY H6 NA VCCINT N15 7 IO_L276P_YY E2 NA VCCINT N16 7 IO_L277N_Y E4 NA VCCINT N17 7 IO_VREF_L277P_Y K9 NA VCCINT N18 7 IO_L278N J8 NA VCCINT P13 7 IO_L278P F4 NA VCCINT P18 7 IO_L280N G6 NA VCCINT R13 7 IO_L280P C2 NA VCCINT R18 7 IO_L281N_Y D2 NA VCCINT T13 7 IO_L281P_Y F5 NA VCCINT T18 NA VCCINT U18 2 DONE AJ28 NA VCCINT U13 NA DXN AJ3 NA VCCINT V13 NA DXP AH4 NA VCCINT V14 3 CCLK F26 NA VCCINT V15 Module 4 of 4 34 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 5: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin NA VCCINT V16 NA VCCO_2 N19 NA VCCINT V17 NA VCCO_2 P19 NA VCCINT V18 NA VCCO_3 AE29 NA VCCINT W11 NA VCCO_3 W28 NA VCCINT W12 NA VCCO_3 U23 NA VCCINT W19 NA VCCO_3 U20 NA VCCINT W20 NA VCCO_3 T20 NA VCCINT Y11 NA VCCO_3 V19 NA VCCINT Y12 NA VCCO_3 T19 NA VCCINT Y19 NA VCCO_3 U19 NA VCCINT Y20 NA VCCO_4 AJ25 NA VCCO_4 AH19 NA VCCO_0 B6 NA VCCO_4 W18 NA VCCO_0 M15 NA VCCO_4 AC17 NA VCCO_0 M14 NA VCCO_4 Y17 NA VCCO_0 L15 NA VCCO_4 W17 NA VCCO_0 L14 NA VCCO_4 W16 NA VCCO_0 H14 NA VCCO_4 Y16 NA VCCO_0 M13 NA VCCO_5 AJ6 NA VCCO_0 C12 NA VCCO_5 Y15 NA VCCO_1 B25 NA VCCO_5 W15 NA VCCO_1 C19 NA VCCO_5 AC14 NA VCCO_1 M18 NA VCCO_5 Y14 NA VCCO_1 M17 NA VCCO_5 W14 NA VCCO_1 L17 NA VCCO_5 W13 NA VCCO_1 H17 NA VCCO_5 AH12 NA VCCO_1 L16 NA VCCO_6 AE2 NA VCCO_1 M16 NA VCCO_6 V12 NA VCCO_2 F29 NA VCCO_6 U12 NA VCCO_2 M28 NA VCCO_6 T12 NA VCCO_2 P23 NA VCCO_6 U11 NA VCCO_2 R20 NA VCCO_6 T11 NA VCCO_2 P20 NA VCCO_6 U8 NA VCCO_2 R19 NA VCCO_6 W3 DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 35 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Table 5: FG900 Fine-Pitch BGA Package -- XCV812E Bank Description Pin Bank Description Pin NA VCCO_7 F2 NA GND H23 NA VCCO_7 R12 NA GND B23 NA VCCO_7 P12 NA GND AC23 NA VCCO_7 N12 NA GND AB22 NA VCCO_7 R11 NA GND V22 NA VCCO_7 P11 NA GND N22 NA VCCO_7 P8 NA GND AH18 NA VCCO_7 M3 NA GND AB18 NA GND J18 NA GND Y18 NA GND C18 NA GND AH7 NA GND U17 NA GND AK30 NA GND T17 NA GND AJ30 NA GND R17 NA GND B30 NA GND P17 NA GND A30 NA GND U16 NA GND AK29 NA GND T16 NA GND AJ29 NA GND R16 NA GND AC29 NA GND P16 NA GND H29 NA GND U15 NA GND B29 NA GND T15 NA GND A29 NA GND R15 NA GND AH28 NA GND P15 NA GND V28 NA GND U14 NA GND N28 NA GND T14 NA GND C28 NA GND R14 NA GND AG27 NA GND P14 NA GND D27 NA GND AH13 NA GND AF26 NA GND AB13 NA GND E26 NA GND J13 NA GND F25 NA GND C13 NA GND AE25 NA GND V9 NA GND G24 NA GND N9 NA GND AJ23 NA GND J9 NA GND AD24 NA GND AJ8 Module 4 of 4 36 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 5: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG900 Fine-Pitch BGA Package -- XCV812E FG900 Differential Pin Pairs Bank Description Pin NA GND AC8 NA GND H8 NA GND AD7 NA GND B8 NA GND AE6 NA GND G7 NA GND F6 NA GND AF5 Pairs with a note number in the AO column are device dependent. They can have asynchronous outputs if the pin pair is in the same CLB row and column in the device. Numbers in this column refer to footnotes that indicate which devices have pin pairs that can be asynchronous outputs. The Other Functions column indicates alternative function(s) not available when the pair is used as a differential pair or differential clock. NA GND E5 Table 6: NA GND AG4 NA GND D4 NA GND V3 NA GND N3 3 0 C15 A15 NA IO LVDS 34 NA GND C3 2 1 E15 E16 NA IO LVDS 34 NA GND AK2 1 5 AK16 AH16 NA IO LVDS 177 NA GND AH3 0 4 AJ16 AF16 NA IO LVDS 177 NA GND AC2 NA GND H2 1 0 G8 D5 - NA GND B2 2 0 H9 A3 - NA GND A2 4 0 D6 A4 - NA GND AK1 5 0 B5 E7 VREF NA GND AJ2 6 0 F8 A5 - - NA GND AJ1 7 0 N11 D7 - - 8 0 E8 G9 GND A1 - NA 9 0 J11 A6 VREF NA GND B1 10 0 B7 C7 - - 11 0 H10 C8 - - 12 0 F10 G10 - 13 0 H11 A8 VREF 15 0 J12 B9 - - 17 0 B10 G11 - - 19 0 F11 H13 - 20 0 D11 E11 - 22 0 C11 F12 - 23 0 D12 A10 VREF 24 0 A11 E12 - - DS025-4 (v1.6) July 17, 2002 Virtex-E Extended Memory devices have differential pin pairs that can also provide other functions when not used as a differential pair. A in the AO column indicates that the pin pair can be used as an asynchronous output for all devices provided in this package. Pair FG900 Differential Pin Pair Summary -- XCV812E Bank P N Pin Pin Other AO Functions GCLK LVDS IO LVDS Total Pairs: 235, Asynchronous Output Pairs: 85 www.xilinx.com 1-800-255-7778 Module 4 of 4 37 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 6: FG900 Differential Pin Pair Summary -- XCV812E P N Table 6: FG900 Differential Pin Pair Summary -- XCV812E Other P N Other Pair Bank Pin Pin AO Functions Pair Bank Pin Pin AO Functions 25 0 B12 G13 - - 67 1 F24 A27 - 26 0 K13 A12 - 69 1 C27 K21 CS 27 0 B13 F13 VREF 70 2 J22 E27 DIN_D0 28 0 E13 G14 - - 72 2 G25 E25 - 29 0 B14 D14 - - 73 2 E28 C30 - - 30 0 J14 A14 - 75 2 D30 J23 - - 31 0 J15 K14 VREF 76 2 L21 F28 VREF 34 1 E16 A15 - GCLK LVDS 3/2 77 2 G28 E30 - 35 1 F16 B16 - - 78 2 G27 E29 - - 36 1 H16 A16 - - 79 2 K23 H26 - - 37 1 K15 C16 VREF 80 2 F30 L22 VREF 38 1 G16 K16 - 81 2 H27 G29 - 39 1 E17 A17 - - 82 2 G30 M21 - 40 1 C17 F17 - - 83 2 J24 J26 - - 41 1 A18 E18 VREF 84 2 H30 L23 - VREF 42 1 A19 D18 - 86 2 J29 K24 - - 43 1 G18 B19 - - 88 2 M22 K29 - D2 44 1 H18 D19 - - 90 2 N21 K25 - 45 1 F19 F18 VREF 91 2 L24 L27 - - 46 1 K17 B20 - 93 2 L26 L28 - - 48 1 C20 G19 - 94 2 L30 M27 VREF 49 1 E20 K18 - 95 2 M26 M29 - 51 1 A21 F20 - 96 2 N29 M30 - - 52 1 A22 C21 VREF 97 2 N25 N27 - - 53 1 B22 H19 - - 98 2 N30 P21 D3 54 1 D22 E21 - - 99 2 N26 P28 - 55 1 C22 F21 VREF 100 2 P29 N24 - 56 1 E22 H20 - 101 2 P22 R26 - - 57 1 A23 G21 - - 102 2 P25 R29 - VREF 58 1 K19 A24 - - 104 2 R25 T30 - - 59 1 B24 C24 VREF 106 3 R24 U29 - TRDY 60 1 G22 H21 - 107 3 R22 T27 - - 61 1 C25 E23 - - 108 3 R23 T28 - - 62 1 A26 D24 - - 109 3 T21 T25 - VREF 63 1 K20 B26 VREF 110 3 U28 U30 - - 64 1 J21 D25 - 111 3 T23 U27 - 66 1 G23 B27 - 112 3 U25 V27 - Module 4 of 4 38 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R Table 6: VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays FG900 Differential Pin Pair Summary -- XCV812E P N Table 6: FG900 Differential Pin Pair Summary -- XCV812E Other P N Other Pair Bank Pin Pin AO Functions Pair Bank Pin Pin AO Functions 113 3 U24 V29 VREF 156 4 AJ22 AG22 VREF 114 3 W30 U22 - - 158 4 AA19 AF21 - - 115 3 U21 W29 - - 160 4 AG21 AK23 - - 116 3 V26 W27 - 162 4 AE20 AJ21 - 117 3 W26 Y29 VREF 163 4 AG20 AF20 - 118 3 W25 Y30 - - 165 4 AJ20 AE19 - 120 3 AA30 W24 - - 166 4 AK22 AH20 VREF 121 3 AA29 V20 - 167 4 AG19 AB17 - - 123 3 Y26 AB30 D5 168 4 AJ19 AD17 - - 124 3 V21 AA28 VREF 169 4 AA16 AA17 - 125 3 Y25 AA27 - - 170 4 AK21 AB16 VREF 126 3 W22 Y23 - - 171 4 AG18 AK20 - - 127 3 Y24 AB28 - VREF 172 4 AK19 AD16 - - 128 3 AC30 AA25 - - 173 4 AE16 AE17 - 129 3 W21 AA24 - 174 4 AG17 AJ17 VREF 130 3 AB26 AD30 - 176 4 AG16 AK17 - - 131 3 Y22 AC27 VREF 177 5 AF16 AH16 - GCLK LVDS 1/0 132 3 AD28 AB25 - - 179 5 AB15 AF15 - - 133 3 AC26 AE30 - - 180 5 AA15 AF14 VREF 134 3 AD27 AF30 - 181 5 AH15 AK15 - 135 3 AF29 AB24 VREF 182 5 AB14 AF13 - - 136 3 AB23 AE28 - - 183 5 AH14 AJ14 - - 138 3 AE26 AG29 - - 184 5 AE14 AG13 VREF 139 3 AH30 AC24 - 185 5 AK13 AD13 - 141 3 AH29 AA22 INIT 186 5 AE13 AF12 - - 142 4 AF27 AK28 - 187 5 AC13 AA13 - - 144 4 AD23 AJ27 - 188 5 AA12 AJ12 VREF 145 4 AB21 AF25 - 189 5 AB12 AE11 - 147 4 AA21 AG25 - 191 5 AG11 AF11 - 148 4 AJ26 AD22 VREF 192 5 AH11 AJ11 - 149 4 AA20 AH25 - - 194 5 AD12 AK11 - 150 4 AC21 AF24 - - 195 5 AJ10 AC12 VREF 151 4 AG24 AK26 - 196 5 AK10 AD11 - - 152 4 AJ24 AF23 VREF 197 5 AJ9 AE9 - - 153 4 AE23 AB20 - - 198 5 AH10 AF9 VREF 154 4 AC20 AG23 - - 199 5 AH9 AK9 - 155 4 AF22 AE22 - 200 5 AF8 AB11 - - DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 39 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Table 6: FG900 Differential Pin Pair Summary -- XCV812E P N Table 6: FG900 Differential Pin Pair Summary -- XCV812E Other P N Other Pair Bank Pin Pin AO Functions Pair Bank Pin Pin AO Functions 201 5 AC11 AG8 - - 247 7 R10 T1 - IRDY 202 5 AK8 AF7 VREF 249 7 R4 R8 - - 203 5 AG7 AK7 - 250 7 R3 R7 - - 204 5 AJ7 AD10 - - 251 7 P6 P10 - VREF 205 5 AH6 AC10 - - 252 7 P2 P5 - - 206 5 AD9 AG6 VREF 253 7 P4 P7 - 207 5 AB10 AJ5 - 254 7 R2 N4 - 209 5 AC9 AJ4 - 255 7 P1 N7 VREF 210 5 AG5 AK4 - 256 7 N6 M6 - - 212 6 AC6 AF3 - 257 7 N1 N5 - - 214 6 AE4 AB9 - 258 7 M5 M4 - 215 6 AH1 AE3 - - 259 7 M1 M2 VREF 217 6 AA10 AG1 - - 260 7 L2 L4 - - 218 6 AD4 AA9 VREF 262 7 M8 L1 - - 219 6 AD2 AD5 - 263 7 M9 K2 - 220 6 AF2 AD3 - - 265 7 K1 K5 - 221 6 AA7 AA8 - - 266 7 K3 L6 VREF 222 6 Y9 AF1 VREF 267 7 K4 L7 - - 223 6 AC4 AB6 - 268 7 J5 L8 - - 224 6 W8 AE1 - 269 7 H4 K6 - VREF 225 6 AB4 Y8 - - 270 7 K7 H1 - - 226 6 W9 AB3 - VREF 271 7 J2 J7 - 228 6 V10 AB1 - - 272 7 G2 H5 - 230 6 AA3 V11 - - 273 7 G5 L9 VREF 232 6 AA6 W7 - 274 7 K8 F3 - - 233 6 Y4 Y6 - - 275 7 E1 G3 - - 235 6 Y2 Y3 - - 276 7 E2 H6 - 236 6 W5 Y5 VREF 277 7 K9 E4 VREF 237 6 W6 W4 - 278 7 F4 J8 - - 238 6 W2 V6 - - 280 7 C2 G6 - - 239 6 V4 U9 - - 281 7 F5 D2 - - 240 6 T8 AB2 VREF 241 6 W1 U5 - 242 6 T9 Y1 - 243 6 U3 T7 - - 244 6 V2 T5 - VREF 246 6 U2 T4 - - Module 4 of 4 40 www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Virtex-E Extended Memory Device/Package Combinations and Maximum I/O Virtex-E Extended Memory Series Maximum User I/O by Device/Package (Excluding Dedicated Clock Pins) Package XCV405E XCV812E BG560 404 404 FG676 404 FG900 556 Virtex-E Ordering Information Virtex-II ordering information is shown in Figure 1 Example: XCV405E-6BG560C Device Type Speed Grade (-6, -7, -8) Temperature Range C = Commercial (TJ = 0C to +85C) I = Industrial (TJ = -40C to +100C) Number of Pins Package Type BG = Ball Grid Array FG = Fine Pitch Ball Grid Array DS025_001_112000 Figure 1: Virtex Ordering Information DS025-4 (v1.6) July 17, 2002 www.xilinx.com 1-800-255-7778 Module 4 of 4 41 R VirtexTM-E 1.8 V Extended Memory Field Programmable Gate Arrays Revision History The following table shows the revision history for this document. Date Version 03/23/00 1.0 Initial Xilinx release. 08/01/00 1.1 Accumulated edits and fixes. Upgrade to Preliminary. Preview -8 numbers added. Reformatted to adhere to corporate documentation style guidelines. Minor changes in BG560 pin-out table. 09/19/00 1.2 11/20/00 1.3 Revision * * * * * * * 07/23/01 1.5 * In Table 4, FG676 Fine-Pitch BGA -- XCV405E, pin B19 is no longer labeled as VREF, and pin G16 is now labeled as VREF. Updated values in Virtex-E Switching Characteristics tables. Converted data sheet to modularized format. See the Virtex-E Extended Memory Data Sheet section. Changed definition of T31 and T32 pins in Table 1 for XCV405E and the XCV812E devices. 07/17/02 1.6 * Data sheet designation upgraded from Preliminary to Production. 04/02/01 1.4 * In Table 3 (Module 4), FG676 Fine-Pitch BGA -- XCV405E, the following pins are no longer labeled as VREF: B7, G16, G26, W26, AF20, AF8, Y1, H1. Min values added to Virtex-E Electrical Characteristics tables. Updated speed grade -8 numbers in Virtex-E Electrical Characteristics tables (Module 3). Updated minimums in Table 11 (Module 2), and added notes to Table 12 (Module 2). Added to note 2 of Absolute Maximum Ratings (Module 3). Changed all minimum hold times to -0.4 for Global Clock Set-Up and Hold for LVTTL Standard, with DLL (Module 3). Revised maximum TDLLPW in -6 speed grade for DLL Timing Parameters (Module 3). * * Virtex-E Extended Memory Data Sheet The Virtex-E Extended Memory Data Sheet contains the following modules: * DS025-1, Virtex-E 1.8V Extended Memory FPGAs: * Introduction and Ordering Information (Module 1) * DS025-2, Virtex-E 1.8V Extended Memory FPGAs: Functional Description (Module 2) Module 4 of 4 42 DS025-3, Virtex-E 1.8V Extended Memory FPGAs: DC and Switching Characteristics (Module 3) * DS025-4, Virtex-E 1.8V Extended Memory FPGAs: Pinout Tables (Module 4) www.xilinx.com 1-800-255-7778 DS025-4 (v1.6) July 17, 2002