PMXB40UNE
12 V, N-channel Trench MOSFET
27 September 2013 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•Trench MOSFET technology
•Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
•Exposed drain pad for excellent thermal conduction
•ElectroStatic Discharge (ESD) protection 1 kV
•Very low Drain-Source on-state resistance RDSon = 34 mΩ
•Very low threshold voltage of 0.65 V for portable applications
3. Applications
•Low-side load switch and charging switch for portable devices
•Power management in battery-driven portables
•LED driver
•DC-to-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 12 V
VGS gate-source voltage
Tj = 25 °C
-8 - 8 V
IDdrain current VGS = 4.5 V; Tamb = 25 °C [1] - - 3.2 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C - 34 45 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
4 D drain
Transparent top view
1
2
34
DFN1010D-3 (SOT1215)
017aaa255
G
D
S
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMXB40UNE DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
SOT1215
7. Marking
Table 4. Marking codes
Type number Marking code
PMXB40UNE 10 00 00
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
VENDOR CODE
YEAR DATE
CODE
READING
DIRECTION
READING EXAMPLE:
11
01
10
aaa-008041
MARK-FREE AREA
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 12 V
VGS gate-source voltage
Tj = 25 °C
-8 8 V
VGS = 4.5 V; Tamb = 25 °C [1] - 3.2 AIDdrain current
VGS = 4.5 V; Tamb = 100 °C [1] - 2.5 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 15 A
[2] - 0.4 WTamb = 25 °C
[1] - 1.07 W
Ptot total power dissipation
Tsp = 25 °C - 8.33 W
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb = 25 °C [1] - 1 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Tj(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
Pder
(%)
0
Fig. 2. Normalized total power dissipation as a
function of junction temperature
Tj(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
Ider
(%)
0
Fig. 3. Normalized continuous drain current as a
function of junction temperature
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 4 / 15
aaa-008985
1
10-1
10
102
ID
(A)
10-2
VDS(V)
10-1 102
101
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2tp= 100 ms
tp= 10 ms
tp= 1 ms
tp= 100 µs
tp= 10 µs
IDM = single pulse
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 271 311 K/WRth(j-a) thermal resistance
from junction to
ambient
in free air
[2] - 102 117 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- 10 15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 5 / 15
aaa-008918
tp(s)
10-3 102103
10110-2 10-1
102
10
103
Zth(j-a)
(K/W)
1
0
0.02
0.05
0.1
0.2
0.25
0.33
0.5
0.75
duty cycle = 1
0
.
0
1
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-008919
tp(s)
10-3 102103
10110-2 10-1
102
10
103
Zth(j-a)
(K/W)
1
0
0.01
0.02
0.05
0.1
0.2
0.25
0.33
0.5
0.75
duty cycle = 1
FR4 PCB, mounting pad for drain 6 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 12 - - V
VGSth gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V
IDSS drain leakage current VDS = 12 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µAIGSS gate leakage current
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C - 34 45 mΩ
VGS = 4.5 V; ID = 3.2 A; Tj = 150 °C - 49 67 mΩ
VGS = 2.5 V; ID = 3.2 A; Tj = 25 °C - 39 64 mΩ
VGS = 1.8 V; ID = 1 A; Tj = 25 °C - 46 85 mΩ
VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C - 50 100 mΩ
RDSon drain-source on-state
resistance
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C - 121 - mΩ
gfs forward
transconductance
VDS = 10 V; ID = 2 A; Tj = 25 °C - 1.2 - S
RGgate resistance f = 1 MHz - 1 - Ω
Dynamic characteristics
QG(tot) total gate charge - 6.6 11.6 nC
QGS gate-source charge - 0.6 - nC
QGD gate-drain charge
VDS = 10 V; ID = 3.2 A; VGS = 4.5 V;
Tj = 25 °C
- 1.7 - nC
Ciss input capacitance - 556 - pF
Coss output capacitance - 107 - pF
Crss reverse transfer
capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 94 - pF
td(on) turn-on delay time - 6 - ns
trrise time - 21 - ns
td(off) turn-off delay time - 18 - ns
tffall time
VDS = 10 V; ID = 3.2 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
- 9 - ns
Source-drain diode
VSD source-drain voltage IS = 1 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 7 / 15
VDS(V)
0 431 2
aaa-008986
4
8
12
ID
(A)
0
V
G
S
=
1
.
0
V
1
.
2
V
1
.
4
V
1
.
5
V
1
.
6
V
1
.
8
V
2
.
5
V
4
.
5
V
Tj = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-008987
VGS (V)
0 1.510.5
10-4
10-5
10-3
10-2
ID
(A)
10-6
m
i
n
t
y
p
m
a
x
Tj = 25 °C; VDS = 5 V
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
aaa-008988
ID(A)
0 1284
40
80
120
RDSon
(mΩ)
0
V
G
S
=
4
.
5
V
2
.
5
V
2
.
0
V
1
.
8
V
1
.
7
V
1
.
6
V
1
.
5
V
1
.
4
V
1
.
3
V
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
VGS(V)
0 542 31
aaa-008989
40
80
120
RDSon
(mΩ)
0
T
j
=
1
5
0
°
C
T
j
=
2
5
°
C
ID = 3.2 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 8 / 15
VGS (V)
0 21.50.5 1
aaa-008990
4
6
2
8
10
ID
(A)
0
T
j
=
1
5
0
°
C
T
j
=
2
5
°
C
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)
-60 1801200 60
aaa-008991
1
0.5
1.5
2
a
0
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Tj(°C)
-60 1801200 60
aaa-008992
0.50
0.75
0.25
1.00
1.25
VGS(th)
(V)
0
min
t
y
p
m
a
x
ID = 0.25 mA; VDS = VGS
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
aaa-008993
VDS (V)
10-1 102
101
102
103
C
(pF)
10
C
iss
C
oss
C
rss
f = 1 MHz; VGS = 0 V
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 9 / 15
QG (nC)
0 862 4
aaa-008994
2
3
1
4
5
VGS
(V)
0
ID = 3.2 A; VDS = 10 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-008995
VSD (V)
0 1.20.80.4
1
0.5
1.5
2
Is
(A)
0
T
j
=
1
5
0
°
C
T
j
=
2
5
°
C
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 18. Duty cycle definition
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 10 / 15
12. Package outline
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1215
sot1215_po
13-03-05
13-03-06
Unit
mm
min
nom
max
0.245 1.05
0.1
A
Dimensions (mm are the original dimensions)
Note
1. Dimension A is including plating thickness.
DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads;
3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215
A1b
0.22
b1D E1e e1
0.20 0.225
0.25 0.275
0.17 0.195
L1
0.16
0.240.40
0.37
0.34
0.04 0.325
0.275
1.150.30
0.25
scale
L
0 1 mm
0.87
0.95
D1E
0.95
1.05
0.750.191.10 0.90 1.00
b (2x)
e
pin 1
index area
solderable lead
end, protrusion
max. 0.02 mm (3x)
visible depend upon
used manufacturing
technology (2x)
visible depend upon
used manufacturing
technology (4x)
D b1
L (2x)
E1
D1
E
A1
A
L1
e1
12
3
Fig. 19. Package outline DFN1010D-3 (SOT1215)
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 11 / 15
13. Soldering
SOT1215Footprint information for reflow soldering of DFN1010D-3 package
sot1215_fr
solder land
solder resist
solder land plus solder paste
occupied area
Dimensions in mm
Issue date 12-11-23
13-03-06
0.3
0.75
1.1
0.4
0.35 (2x)
0.45 (2x) 0.3
1.2
0.25 (2x)
0.5
0.4
0.5
1.41.5
0.3
0.3
0.4
0.5
1.3
0.4
0.4
0.5 1.3
Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215)
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 12 / 15
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMXB40UNE v.1 20130927 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 13 / 15
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 14 / 15
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMXB40UNE
12 V, N-channel Trench MOSFET
PMXB40UNE All information provided in this document is subject to legal disclaimers.
Product data sheet 27 September 2013 15 / 15
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information .............................................2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................4
10 Characteristics .......................................................6
11 Test information ..................................................... 9
12 Package outline ................................................... 10
13 Soldering .............................................................. 11
14 Revision history ...................................................12
15 Legal information .................................................13
15.1 Data sheet status ............................................... 13
15.2 Definitions ...........................................................13
15.3 Disclaimers .........................................................13
15.4 Trademarks ........................................................ 14
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
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Date of release:
27 September 2013
