SST12LP14-QVCE - Silicon Storage Technology, Inc.

S71279-00-000 1/05

The SST logo and SuperFla sh are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specificat ions

FEATURES:

• High Gain:

– Typically 30 dB gain ac ro ss 2.4~2.5 GHz over

temperature 0°C to +80°C

• High linear output power:

– >26.5 dBm P1dB

– Meets 802.11g OFDM ACPR requiremen t up to

23 dBm

– Added EVM ~4% up to 20 dBm for

54 Mbps 802.11g signal

– Meets 802.11b ACPR requirement up to 24 dBm

• High power-added efficiency/Low operating

current for both 802.11g/b applications

–~22% @ P

OUT = 22 dBm for 802.11g

–~26% @ P

OUT = 23.5 dBm for 802.11b

• Built-in Ultra-low IREF power-up/down control

–I

REF <4 mA

• Low idle current

–~60 mA I

• High-speed power-up/down

– Turn on/off time (10%~90%) <100 ns

– Typical power-up/down delay with driver delay

included <200 ns

• High tempera ture stability

– ~1 dB gain/power variation between 0°C to +80°C

– ~1 dB detector variation over 0°C to +80°C

• Low shut- down current (< 0.1 µA)

• On-chip power detection

• 25 dB dynamic range on-chip power detection

• Simple input/output matching

• Packages available

– 16-contact VQFN (3mm x 3mm)

– Non-Pb (lead-free) packages available

APPLICATIONS:

• WLAN (IEEE 802.11g/b)

•Home RF

• Cordless phones

• 2.4 GHz ISM wireless equipment

PRODUCT DESCRIPTION

The SST12LP14 is a high-performance power amplifier IC

based on the highly-reliab le InGaP/GaAs HBT te chnolog y.

The SST12LP14 can be easily configured for high-power,

high-efficiency applications with superb power-added effi-

ciency while operating over the 2.4~2.5 GHz frequency

band. It typically provides 30 dB gain with 22% power-

added efficiency @ POUT = 22 dBm for 802.11g and 27%

pow er-added efficiency @ POUT = 24 dBm for 802.11b .

The SST12LP14 has excellent linearity, typically <4%

added EVM up to 20 dBm outpu t power which is essential

for 54 Mbps 802.11g operation while meeting 802.11g

spectrum mask at 23 dBm. The SST12LP14 also has

wide-range (>25 dB), temperature-stable (~1 dB over

80°C), single-ended/differential power detectors which

low er users’ cost on power control.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/do wn control. Ultra -

low reference current (total IREF <4 mA) makes the

SST12LP14 controllable by an on/off switching signal

directly from the baseband chip. These features coupled

with low operating current make the SST12LP14 ideal for

the final stage power amplification in battery-powered

802.11g/b WLAN tr ansmitter applica tions.

The SST12LP14 is offered in 16-contact VQFN package.

See Figure 1 for pin assignments and Table 1 for pin

descriptions.

2.4 GHz Power Amplifier

SST12LP14

SST12LP142.4 GHz Power Amplifier

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

FUNCTIONAL BLOCKS

56 8

VCC

VCCb

VREF

Det_r

VCC2

RFOU

Det

FIN

NC Bias Circuit

1279 B1

FUNCTIONAL BLOCK DIAGRAM

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

PIN ASSIGNMENTS

FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT VQFN

PIN DESCRIPTIONS

TABLE 1: PIN DESCRIPTION

Symbol Pin No. Pin Name Type1

1. I=Input, O=Output

Function

GND 0 Ground The center pad should be connected to RF ground with

several low inductance, low resistance vias.

NC 1 No Connection Unconnected pins.

RFIN 2 I RF input, DC decoupled

RFIN 3 I RF input, DC decoupled

NC 4 No Connection Unconnected pins.

VCCb 5 Power Supply PWR Supply voltage for bias circuit

VREF1 6 PWR 1st stage idle current control

VREF2 7 PWR 2nd stage idle current control

Det_ref 8 O On-chip power detector reference

Det 9 O On-chip power detector

RFOUT 10 O RF output

RFOUT 11 O RF output

VCC2 12 Power Supply PWR Power supply, 2nd stage

NC 13 No Connection Unconnected pins.

NC 14 No Connection Unconnected pins.

NC 15 No Connection Unconnected pins.

VCC1 16 Power Supply PWR Power supply, 1st stage

T1.0 1279

56 8

VCC

15 14

VCCb

VREF

Det_r

VCC2

RFOUT

Det

FIN

1279 16-vqfn P1

Top View

(contacts facing down)

RF and DC GND

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

ELECTRICAL SPECIFICATIONS

The A C and DC specifications for the po wer amplif ier interf ace signals. Ref er to Tab le 2 f or the DC v oltage a nd current spec-

ifications . Refer to Figure s 2 through 12 for the RF perfo rmance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Supply Voltage at pins 5, 12, and 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V

Reference volt ag e to pin 6 (V REF1) and pin 7 (VREF2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +3.6V

DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA

Operating Temperature (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC

Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC

Maximum Junction Temperature (T J). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC

Surf ace Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . “with-Pb” units1: 240°C for 3 seconds

1. Certain “with-Pb” package types are capable of 260°C for 3 seconds; please consult the factory for the latest information.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .“non-Pb” units: 260°C for 3 seconds

OPERATING RANGE

Range Ambient Temp VCC

Industrial -40°C to +85°C 3.3V

TABLE 2: DC ELECTRICAL CHARACTERISTICS

Symbol Parameter Min. Typ Max. Unit Test Conditions

VCC Supply Voltage at pins 5, 12, 16 3.0 3.3 4.2 V

ICC Supply Current

for 802.11g, 24 dBm 290 mA

for 802.11g, 25 dBm 340 mA

ICQ Idle current for 802.11g to meet EVM @ 20.5 dBm 55 mA

IOFF Shut down current 0.1 µA

VREG1 Reference Voltage for 1st Stage, with 120Ω resistor 2.7 2.9 3.1 V

VREG2 Reference Voltage for 2nd Stage, with 360Ω resistor 2.7 2.9 3.1 V

VREG1 Reference Voltage for 1st Stage, with 220Ω resistor 2.9 3.1 3.3 V

VREG2 Reference Voltage for 2nd Stage, with 590Ω resistor 2.9 3.1 3.3 V

T2.0 1279

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

TABLE 3: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION

Symbol Parameter Min. Typ Max. Unit

FL-U Frequency range 2400 2485 MHz

POUT Output power

@ PIN = -7 dBm 11b signals 23 dBm

@ PIN = -10 dBm 11g signals 20 dBm

G Small signal gain 30 31 33 dB

GVAR1 Gain variation over band (2400~2485 MHz) ±0.5 dB

GVAR2 Gain ripple over channel (20 MHz) 0.2 dB

ACPR Meet 11b spectrum mask 23 dBm

Meet 11g OFDM 54 MBPS spectrum mask 22 dBm

Added EVM @ 20 dBm output with 11g OFDM 54 MBPS signal 3 %

2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors -40 dBc

T3.0 1279

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

TYPICAL PERFORMANCE CHARACTERISTICS

TEST CONDITIONS: VCC = 3.3V, TA = 25°C

FIGURE 2: S-PARAMETERS

FIGURE 3: INPUT RETURN LOSS FIGURE 4: IN-BAND GAIN FLATNESS

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

TYPICAL PERFORMANCE CHARACTERISTICS

TEST CONDITIONS: F1 = 2.45 GHZ, F2 = 2.451 GHZ

FIGURE 5: POUT VS PIN

FIGURE 6: IM3 VS POUT

FIGURE 7: DETECTORS VS POUT

FIGURE 8: GAIN VS POUT

FIGURE 9: PAE FOR TWO TONE

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

TYPICAL PERFORMANCE CHARACTERISTICS

TEST CONDITIONS: VCC = 3.3V, TA = 25°C, F = 2.45 GHZ, 54 MBPS 802.11G OFDM SIGNAL

FIGURE 10: 802.11G SPECTRUM AT 22/23 DBM, DC CURRENT 210/240 MA

FIGURE 11: 802.11G ADDED EVM FOR 54 MBPS 802.11G SIGNAL

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

FIGURE 12: 802.11B SPECTRUM AT 24 DBM, DC CURRENT CONSUMPTION 280 MA

FIGURE 13: TYPICAL SCHEMATIC FOR HIGH-POWER, HIGH-EFFICIENCY 802.11B/G APPLICATIONS

R1=120Ω, R2=360 and

VREG1=VREG2=2.8~3.0V

R1=220Ω, R2=590 and

VREG1=VREG2=2.9~3.3V

5678

16 15

Bias circuit

50Ω/150mil 50Ω RFOUT

10pF10pF

2.4pF

50 /140mil

50Ω RFin

VREG1 VREG2

14 13

4.7µF

0.1 µF

Vcc

0.1 µF

12nH/06

R2 360*Ω

R1 120Ω

100pF 0.1 µF

Det_ref Det

10pF 10pF

2.0pF

100pF 100pF

1279 Schematic.0.1

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

PRODUCT ORDERING INFORMATION

Valid combinations for SST12LP14

SST12LP14-QVC

SST12LP14-QVCE

SST12LP14 Evaluation Kits

SST12LP14-QVC-K

SST12LP14-QVCE-K

Note: Valid combin ations are those products in mass production or will be in mass production. Consult your SST sales

representative to confirm availability of valid combinations and to determine availability of new combinations.

SST12LP 14 - QVC E

SSTxxLP xx -XXXX

Environmental Attribute

E1 = non-Pb contact (lead) finish

Package Modifier

C = 16 contact

Pa ckag e Type

QV = VQFN

Product Family Identifier

Product Type

P = Power Amplifier

Voltage

L = 3.0-3.6V

Frequen cy of Op er ation

2 = 2.4 GHz

Product Line

1 = SST Communications

1. Environmental suffix “E” denotes non-Pb solder.

SST non-Pb solder devices are “RoHS Compliant”.

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

PACKAGING DIAGRAMS

16-CONTACT VERY-THIN QUAD FLAT N O-LEAD (VQFN)

SST PACKAGE C ODE: QVC

TABLE 4: REVISION HISTORY

Revision Description Date

00 •S71279: SST conversion of data sheet GP1214 Jan 2005

Note: 1. Complies with JEDEC JEP95 MO-220I, variant VEED except external paddle nominal dimensions.

2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch.

3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads.

This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit.

Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.

4. Untoleranced dimensions are nominal target dimensions.

5. All linear dimensions are in millimeters (max/min).

16-vqfn-3x3-QVC-0

1.7

0.5 BSC

See notes

2 and 3

Pin #1

0.30

0.18

0.076

1.7

0.2

3.00 ± 0.10

3.00 ± 0.10 0.05 Max 0.45

0.35

1.00

0.80

in #1

T OP VIEW BO TT OM VIEWSIDE VIEW

1mm

Preliminary Specifications

2.4 GHz Power Amplifier

SST12LP14

CONTACT INFORMATION

Marketing

SST Communications Corp .

2951 28th Street, Ste. 2040

Santa Monica, CA 90405

Tel: 310-581-1650 x27

Fax: 310-581-1663

Sales

NORTH AMERICA ASIA PACIFIC NORTH

Silicon Storage T echno logy, Inc. SST Macao

Les Crowder H. H. Chang

Technical Sales Support - Major Accounts Senior Director, Sales

1922 Colina Salida Del Sol Room A, 8th Floor,

San Clemente, CA 92673-3652 USA Macao Financial Centre,

Tel: 949-495-6437 No. 230-246, Rua Pequim, Macao

Cell: 714-813-6636 Tel: (853) 706-022

Fax: 949-495-6364 Fax: (853) 706-023

E-mail: lcrowder@sst.com E-mail: hchang@sst.com

EUROPE ASIA PACIFIC SOUTH

Silicon Storage T echno logy Ltd. SST Communications Co .

Ralph Thomson Andy Chang

Applications Manager Director of Sales

Mark House 2F, No. 415, Tiding Blvd., Sec.2,

9-11 Queens Road Neihu, Taipei,

Hersham KT12 5LU UK Taiwan, R.O.C.

Tel: +44 (0) 1869 321 431 Tel: 02-2656-2888 x220

Cell: +44 (0) 7787 508 919 Fax: 02-2656-2889

E-mail: rthomson@sst.com E-mail: achang@sst.com

JAPAN KOREA

SST Japan SST Korea

Yashushi Yoshinaga Charlie Shin

Sales Manager Country Manager

6F Kose #2, 1-14-20 Shin-Yokohama, Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong,

Kohoku-ku, Yokohama 222-0033 Bundang-Gu, Sungnam, Kyunggi-Do

Kanagawa, Japan Korea, 463-020

Tel: (81) 45-4 71-1851 Tel: (82) 31-715-9138

Fax: (81) 45-471-3285 Fax: (82) 31-715-9137

Email: yoshi@sst.com Email: cshin@sst.com

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9 036