TOSHIBA MIG10Q806H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q806H, MIG10Q806HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS e Integrates Inverter, Converter Power Circuits and Thermistor in One Package. e Output (Inverter Stage) : 34 10A/1200V IGBT e Input (Converter Stage) : 3 15A/1600V Silicon Rectifier @ The Electrodes are Isolated from Case. e Outline MIG10Q806H : 2-108K5A MIG10Q806HA : 2-108E6A e Weight : 190g . . EQUIVALENT CIRCUIT P P1 oO oO KET 30Rh & 50h * 7Oo kK & 1 9 Ro+ Bo 4 6 8 So U V WwW To KK 120 9Oo 100" 110 oO oO +4 +? +40 13 N N1 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-03-01 1/9TOSHIBA MIG10Q806H/HA Package Dimension Unit : mm MIG10Q806H 80t0.8 19.054 22.864 11. + 6240.5 5 45.0+0.8 30.48 40.5 15.2440.5 15.040.8 pl) +1 N TT 5 42.0+0.8 11.43+40.5 1.154 0.2%1.040.2 yygythchachch Tey 105+0.5 2-108E5A Unit: mm MIG10Q806HA 80t0.8 19.054 22.864 11. + 6240.5 5 45.0+0.8 30.48 40.5 15.2440.5 5.52 15.040.8 42.040.8 42.0405 11.43+40.5 1.1540.2%1.040.2 | paneer 105+0.5 1.0 t Lr 0. hy 17.00.8 13.040.8 16.5 +0.8 | 2.0406 2-108E6A 1999-03-01 2/9TOSHIBA MIG10Q806H/HA MAXIMUM RATINGS (Ta = 25C) STAGE CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 Vv Gate-Emitter Voltage VGES +20 Vv DC Ic 15/10 A (25C / 80C) inverter Collector Current ims | Icp 30/20 A | (25C/80C) Forward Current DC Ip 10 A orward Curren ims lr 20 A Collector Power Dissipation P 2 (Te = 25C) C 8 w Repetitive Peak Reverse Voltage VRRM 1600 V Average Output Rectified Current Io 15 A Converter Peak One Cycle Surge Forward I 250 A Current (50 Hz, Non-Repetitive) FSM Junction Temperature Tj 150 C Storage Temperature Range Tstg 40~125 C Module . 2500 Isolation Voltage Visol (AC 1 minute) Vv Screw Torque 6 N-m 1999-03-01 3/9TOSHIBA MIG10Q806H/HA ELECTRICAL CHARACTERISTICS (Ta = 25C) a. Inverter stage CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate Leakage Current IGES VGE = 20V, Vcz =0 |+500] nA Collector Cut-Off Current ICES VCE = 1200V, Vag =0 0.5) mA Gate-Emitter Cut-Off Voltage VGE (off) |Ic = 10 mA, VcE=5V 6.0| Vv Collector-Emitter Saturation Vv Ic =10A Tj = 25C _ 2.8} 3.2 v Voltage CE (sat) |von =15V_ |T; = 125C | 31] 37 i . VCE = 10V, VGE = 0, Input Capacitance Cies f= 1MUHz 1200; pF Rise Time ty Vcc = 600 V 0.07) 0.15 Switching Turn-On Time | ton Ic = 10A | 0.15] 0.30 Time : VGE = +15V pS Turn-Off Time | to Tj = 125C (Note 1)| 0.60 | 0.90 Forward Voltage VE If = 10A, Vag =0 2.0 2.8| V : Ip = 10A, VaR = -10V Reverse Recovery Time try di/dt = 200 A/ ps 0.10) 0.25) us . Transistor 1.52 |, Thermal Resistance Rth (j-c) Diode = = LB Ciw b. Converter stage CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Repetitive Peak Reverse _ Current IRRM_ | VRRM = 1600 V 50 | A Peak Forward Voltage VEM IpM = 15A 1.05 | 1.20 Vv Peak One Cycle Surge Forward . Current IFSM 50 Hz sine-half-wave 250 A Thermal Resistance Rth (j-c) 1.90 |C/W c. Thermistor CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Zero-power Resistance R95 I7mM = 0.2mA, Te = 25C 17.31 20 | 23.14] kO B Value Bo5/g5 |Te = 25C/Te = 85C | 3760] K 1999-03-01 4/9TOSHIBA MIG10Q806H/HA (Note 1) Switching Time Test Circuit & Timing Chart 1999-03-01 5/9TOSHIBA MIG10Q806H/HA a. Inverter stage Ic VCE I - VCE 20 20V COMMON EMITTER COMMON 2 Te = 25C Z EMITTER 16 15V Te = 125C o Qo = 10V ~ : : ~ ~ 5 5 me 8 Pa & & o o a a a a a) 4 io) Q 8V o 5 o Von =7V 0 0 2 4 6 8 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR-EMITTER VOLTAGE Veg CV) _ VCE VGE VCE VGE S S ( COMMON EMITTER To = 25C COMMON EMITTER Te = 125C COLLECTOR-EMITTER VOLTAGE VcE COLLECTOR-EMITTER VOLTAGE VcE 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE Voge (Vv) GATE-EMITTER VOLTAGE VGcE () _ VCE VGE I VGE > ~ COMMON " a 40C [f 25C HI ry = 125C oD EMITTER > > < Te = 40C <a) oO g & ee > 4 2 oe ee 5 E Oo = 8 Fi F 8 5 F 2 8 2 COMMON EMITTER 3 Vor =5V 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE Vopr (V) GATE-EMITTER VOLTAGE VoE (CV) 1999-03-01 6/9TOSHIBA MIG10Q806H/HA SWITCHING TIME Ic SWITCHING TIME Rq 3 COMMON EMITTER Vcc = 600 V toff Vor = 15V Ig =10A 1 2 Te = 25C @ B -: Te = 125C 3 3 ic) fc : 5 a o S z z o a 2 2 & 5 S S n na COMMON EMITTER 0.1 Vcc = 600 V VGE = 15V Rg = 1200 : Te = 25C - : Te = 125C 0.03 10 100 10 100 1000 COLLECTOR-CURRENT Ic (A) GATE RESISTANCE Ra (Q) SWITCHING LOSS Ic SWITCHING LOSS Rc > 5 wn wn wa w o a a o oD a 5 5 E E 3 3 COMMON EMITTER COMMON EMITTER Vcc = 600 V Voc = 600 V Var = 15V Var = +15V Rq = 1200 IG =10A 2 Te = 25C 2 Te = 25C - : Tce = 125C mo: 3 To = 125C 4 10 100 10 100 1000 COLLECTOR-CURRENT Ic (A) GATE RESISTANCE Rq (Q) 1999-03-01 7/9TOSHIBA MIG10Q806H/HA C VCE VCE, VGE @G 3000 800 e Voce =0V = 1000 < & = es o a, a 600 > > ic} oO 300 BS Z & ao & Oo B a 4 Sk 400 F100 te 5 i 5 COMMON EMITTER E 4 = o COMMON EMITTER 200 Ry = 600 a | Vge =0 a Te = 25C e f=1MHz 5 a Te = 28C o 10 0 0 1 3 10 30 100 300 1000 0 20 40 60 80 100 COLLECTOR-EMITTER VOLTAGE Voz (V) CHARGE Qq (C) IF VF < trr, Irr, Edsw Ip 20 ~ 10 = =z ce x = 16 43 E ge5 12 E g Te = 26C a3 eS pe 5 5 Bo 5 Oo 8 Poo a oda fond CBr & Ses o1 = arte B 4 gz8 COMMON CATHODE COMMON CATHODE a> Voc = 600V 2am : Te = 25C VGE = -10V Von =0V Om +: Te = 125C di/dt = 200 A/ ps 0 < 0.01 0 1 2 3 4 5 ao 2 4 6 8 10 FORWARD VOLTAGE VF (V) FORWARD CURRENT Ip (A) SHORT CIRCUIT SOA Rth (t) tw 10 a a s oO Zz 2 < IGBT/FRD z 2 a 1 fg a= = a ~~ 5 ze 5 a & ze : z Zo 3 Fe) ie) Vcc = 300 V 3 8 tw = 10 us e Var = 415V = oo L Te 25 Tj = 125C e 0.001 0.01 0.1 1 10 0 200 400 600 800 1000 1200 1400 PULSE WIDTH ty (s) COLLECTOR-EMITTER VOLTAGE Vopr (V) 1999-03-01 8/9TOSHIBA MIG10Q806H/HA REVERSE BIAS SOA 100 Ic (A) _ o COLLECTOR CURRENT Tj = 128C Vor = 15 1 Rg = 1200 0 200 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vcr (CV) b. Converter stage If VE Rth (t) tw 10 COMMON CATHODE a a g E os Be 10 = om z Zp Fe aN pa 2a 5 = 25C Ss a - Be O41 fe a ieee e ic z Te = 25C 0.01 0.001 0.01 01 1 10 0.1 0 0.5 1 15 2 PULSE WIDTH tw (s) FORWARD VOLTAGE Vp (CV) 1999-03-01 9/9