MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM150HY-2H * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 (7.5) (7.5) 93 12 E C C1 E1 23 23 E1 B1 34 10.5 13 10.5 46.5 C1 6.5 C B1 5 E1 8 15 Tab#110, t=0.5 8 LABEL 23 30 37 6.5 M5 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current DC -IC Collector reverse current DC (forward diode current) 150 A PC Collector dissipation TC=25C 1000 W IB Base current DC 8 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Typical value Weight ELECTRICAL CHARACTERISTICS 7 V 150 A 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 250 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 200 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.5 V VBE (sat) Base-emitter saturation voltage -- -- 3.5 V -VCEO Collector-emitter reverse voltage -IC=150A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=150A, VCE=2.8V/5V 75/100 -- -- -- -- -- 3.0 s Switching time VCC=600V, IC=150A, IB1=-IB2=3A -- -- 15 s -- -- 3.0 s Transistor part -- -- 0.125 C/ W Diode part -- -- 0.6 C/ W Conductive grease applied -- -- 0.065 C/ W IC=150A, IB=3A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 160 IB=0.8A 120 IB=0.4A DC CURRENT GAIN hFE IB=1.5A IB=0.2A 80 IB=0.1A 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 BASE-EMITTER VOLTAGE 3.8 7 5 3 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VBE(sat) 10 0 7 5 4 3 2 10 -1 VCE(sat) IB=3A Tj=25C Tj=125C 3 4 5 7 10 1 VBE (V) 3 2 IC=200A 1 IC=50A IC=100A IC=150A 3 4 5 7 10 2 2 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 4 2 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25C Tj=125C VCE=2.8V 10 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.8V Tj=25C Tj=25C Tj=125C 10 3 7 5 3 2 VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 4 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 5 SATURATION VOLTAGE Tj=25C COLLECTOR CURRENT IC (A) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) 10 2 7 VCC=600V 5 IB1=-IB2=3A Tj=25C 3 Tj=125C 2 ts 10 1 7 5 3 2 tf 10 0 7 ton 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 320 VCC=600V IB1=3A IC=150A Tj=25C Tj=125C ts 10 1 7 5 4 3 2 10 0 REVERSE BIAS SAFE OPERATING AREA tf 10-1 2 3 4 5 7 10 0 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) 280 IB2=-2A 240 200 120 80 40 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE 0.14 Zth (j-c) (C/ W) 0.12 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 600 800 1000 VCE (V) SECOND BREAKDOWN AREA 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 5 7 10 1 2 3 0.16 400 90 DERATING FACTOR (%) 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 200 100 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) S 200 DC 10 2 7 5 3 2 S 0 DERATING FACTOR OF F. B. S. O. A. tw=50S 100S 1m Tj=125C COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=-5A 160 TIME (s) TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-IB2=3A Tj=25C 3 Tj=125C 2 1600 1400 Irr (A), Qrr (c) 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 3 2 10 2 Irr Qrr 10 1 trr (s) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 10 1 10 0 7 5 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/