Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM150HY-2H
•ICCollector current ........................ 150A
•VCEX Collector-emitter voltage ......... 1000V
•hFE DC current gain...............................75
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
108
93
(7.5) (7.5)
23 23
φ6.5
12
C
1
E
1
C
1
34
1310.5 10.5
E
1
B
1
Tab#110, t=0.5
M5
37
30
23
6.5
B
1
CEC
E
1
46.5
5
8 815
LABEL
http://store.iiic.cc/
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
1000
1000
1000
7
150
150
1000
8
1500
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
250
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=1000V, VEB=2V
VCB=1000V, Emitter open
VEB=7V
IC=150A, IB=3A
–IC=150A (diode forward voltage)
IC=150A, VCE=2.8V/5V
VCC=600V, IC=150A, IB1=–IB2=3A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
200
2.5
3.5
1.8
—
3.0
15
3.0
0.125
0.6
0.065
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
http://store.iiic.cc/
Feb.1999
1
10
0
10
–1
10
–2
10
3
10
2
10
1
10
0
10
–1
10
0
10
1
10
2
10
3
10
2
10
1
10
0
10
1
10
2
10
3
10
4
10
200
160
120
80
40
001 2 3 4 5
T
j
=25°C I
B
=1.5A
I
B
=0.2A
I
B
=0.8A
I
B
=0.1A
I
B
=0.4A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
V
CE
=5.0V
V
CE
=2.8V
T
j
=25°C
T
j
=125°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
3457
1
10
234577
2
10
V
BE(sat)
T
j
=25°C
T
j
=125°C
I
B
=3A
23
V
CE(sat)
1
10
0
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.8 2.2 2.6 3.0 3.4 3.8
V
CE
=2.8V
T
j
=25°C
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
V
CC
=600V
T
j
=25°C
T
j
=125°C
t
f
t
on
t
s
I
B1
=–I
B2
=3A
0
753275327532
5
4
3
2
1
444
IC=100A
Tj=25°C
Tj=125°C
IC=200A
IC=50A IC=150A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
http://store.iiic.cc/
Feb.1999
0
10
1
10
2
10
3
10
0
10
1
10
0
10
–1
10
–2
10
–3
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
7
5
4
3
2
2
10
7
5
4
3
–1
10 23457 0
10 23457 1
10
Tj=25°C
Tj=125°C
tf
ts
7
1
10
7
VCC=600V
IB1=3A
IC=150A
2
3
0
10
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
tw=50µS
100µS
200µ
S
DC
1m
S
320
80
00 200 1000
240
160
400 600 800
280
200
120
40 Tj=125°C
IB2=–2A
IB2=–5A
100
90
60
40
20
00 16020 40 60 80 100 120 140
80
10
70
50
30
7
5
3
2
7
5
3
2
7
5
3
2
1.6
0.4 0.8 1.2 2.00
Tj=25°C
Tj=125°C
753275327532
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0
3275325
444
TC=25°C
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
http://store.iiic.cc/
Feb.1999
0
10
–1
10
–2
10
–3
10
1
10
0
10
1
10
2
10
0
10
–1
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
2
10
1
10 75432
0
10 75432
0
200
600
1000
1400
1600
1200
800
400
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
Irr
trr
Qrr
VCC=600V
IB1=–IB2=3A
Tj=25°C
Tj=125°C
753275327532
1.0
0.8
0.6
0.4
0.2
0
444
23457 2345
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
http://store.iiic.cc/
