MOC8020, MOC8021 NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l Dimensions in mm 2.54 UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The MOC8020, MOC8021 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a standard 6pin dual in line plastic package with the base pin unconnected. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio (500% min) l BVceo 35V l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Base pin unconnected for improved noise immunity in high EMI environment l High sensitivity to low input drive current l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM 7.0 6.0 1 2 6 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 13 Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -40C to + 125C Operating Temperature -25C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW OPTION G SURFACE MOUNT 7.62 POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 170mW (derate linearly 3.3mW/C above 25C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 28/3/03 DB92152m-AAS/A5 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output V IF = 10mA 10 A VR = 4V 35 V IC = 0.1mA Emitter-collector Breakdown (BVECO) 6 V IE = 10A VCE = 10V 50 100 mA mA 10mA IF , 5V VCE 10mA IF , 5V VCE 5300 7500 VRMS VPK (note 1) (note 1) Output Collector Current ( IC )(Note 2) MOC8020 MOC8021 Input to Output Isolation Voltage VISO Note 1 Note 2 1.4 Collector-emitter Breakdown (BVCEO) 10-6 Collector-emitter Dark Current (ICEO) Coupled TEST CONDITION Input-output Isolation Resistance RISO 1011 VIO = 500V (note 1) Response Time (Rise), tr Response Time (Fall), tf 60 53 s s VCE= 2V, IC= 10mA, RL = 100 , fig.1 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 28/3/03 DB92152m-AAS/A5 Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc (mW) Forward current I F (mA) 60 50 40 30 20 10 0 -25 0 25 50 75 100 125 200 150 100 50 0 -25 o 0 25 50 75 100 125 o Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Current Transfer Ratio vs. Forward Current Fig.4 Forward Current vs. Forward Voltage 100 3500 3000 o Forward current (mA) Current transfer ratio CTR (%) VCE= 2V 2500 2000 1500 1000 100 C 80 C o 60 C 10 1 1 10 0.5 0.7 0.9 1.1 Fig.6 Collector Current vs. Collector-emitter Voltage Fig.5 Collector Current vs. Collector-emitter Voltage 60 100 PC(MAX.) 0.9mA 0.8mA 0.7mA 0.6mA 20 0.5mA 0.2mA 0.3mA 0.4mA 0.1mA 10 0 Collector current Ic (mA) I F= 1mA 30 PC(MAX.) 90 50 40 1.3 1.5 1.7 1.9 Forward voltage (V) Forward current IF (mA) Collector current Ic (mA) 40 C 20 C o 500 0 0.1 80 I F= 5mA 70 60 50 2mA 40 1mA 30 20 10 0 0 2 4 6 8 Collector-emitter voltage Vce (V) 28/03/03 o o 10 0 1 2 3 4 5 Collector-emitter voltage Vce (V) DB92152m-AAS/A5 Relative current transfer ratio (%) 1.0 Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature I F= 1mA VCE= 2V 0.8 0.6 0.4 0.2 Collector-emitter saturation voltage VCE (sat) (V) Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 0 1.00 I F= 20mA Ic= 5mA 0.80 0.60 0.40 0.20 0.00 20 40 60 80 20 100 O Response time ( s) Collector dark current I CEO (nA) 5 VCE= 10V 0.10 20 40 60 80 2 3 10 5 100 tf tr 2 10 5 2 0 10 100 VCE= 2V I C= 10mA 2 2 10 5 O td ts 0.1 10 1 Load resistance RL (k ) Ambient temperature Ta ( C) Fig.11 Frequency Response Test Circuit for Response Time Vcc VCE= 2V I C= 2mA Voltage gain Av (dB) 80 Fig.10 Response Time vs. Load Resistance 1.00 0.01 60 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 10.00 40 O Ambient temperature Ta ( C) Input RD RL Input Output Output 10% 90% 0 td ts tr tf Test Circuit for Frequency Response -10 RL= 10k 1k 100 Vcc RD -20 0.1 1 10 RL Output 100 Frequency f (kHz) 28/03/03 DB92152m-AAS/A5