TLP785,TLP785F TOSHIBA Photocoupler GaAs IRED & Photo-Transistor TLP785,TLP785F Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). TLP785F is a lead forming type for the long creepage surface mounting of TLP785. Unit: mm TLP785 TOSHIBA 11-5L1 Weight: 0.32 g (typ.) * TLP785: 7.62mm pitch type DIP4 * TLP785F: 10.16mm pitch type DIP4 * Collector-emitter voltage: 80V (min.) * Current transfer ratio: 50% (min.) * Isolation voltage: 5000Vrms (min.) * UL approved: UL1577, file No. E67349 * BSI under application: BS EN60065:2002 * SEMKO under application:EN60065:2002 * EN60950-1:2001, EN60335-1:2002 Option(D4)type VDE approved: DIN EN60747-5-2 TLP785F Unit: mm Rank GB: 100% (min.) BS EN60950-1:2006 (Note): When an EN60747-5-2 approved type is needed, Please designate "Option (D4)" TOSHIBA Weight: 0.32g (typ.) . * 11-5L102 Construction mechanical rating 7.62mm Pitch Standard Type 10.16mm Pitch TLPxxxF Type Creepage distance 7.0mm(min) 8.0mm(min) Clearance 7.0mm(min) 8.0mm(min) Insulation thickness 0.4mm(min) 0.4mm(min) Inner creepage distance 4.0mm(min) 4.0mm(min) Pin Configurations (top view) 1 4 2 3 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1 2012-02-20 TLP785,TLP785F Current Transfer Ratio Type TLP785 Classification (Note 1) Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25C Min Max Marking of Classification None 50 600 Blank Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL Rank GB 100 600 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B (Note 1): Ex. rank GB: TLP785 (GB) (Note 2): Application type name for certification test, please use standard product type name, i. e. TLP785 (GB): TLP785 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit IF 60 mA IF / C -0.7 mA / C IFP 1 A PD 90 mW PD / C -0.9 mW / C Reverse voltage VR 5 V Junction temperature Tj 125 C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Power dissipation (single circuit) PC 150 mW PC / C -1.5 mW / C Tj 125 C Operating temperature range Topr -55 to 110 C Storage temperature range Tstg -55 to 125 C Lead soldering temperature (10s) Tsol 260 C Total package power dissipation PT 240 mW PT / C -2.4 mW / C BVS 5000 Vrms Forward current Forward current derating (Ta 39C) LED Pulse forward current (Note 3) Power dissipation Detector Power dissipation derating Power dissipation derating (Ta 25C) Junction temperature Total package power dissipation derating (Ta 25C) Isolation voltage (Note 4) (Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 3): 100 s pulse, 100 Hz frequency (Note 4): AC, 1 min., R.H. 60%. Apply voltage to LED pin and detector pin together. 2 2012-02-20 TLP785,TLP785F Recommended Operating Conditions (Note) Characteristic Symbol Min Typ. Max Unit Supply voltage VCC 5 24 V Forward current IF 16 25 mA Collector current IC 1 10 mA Topr -25 85 C Operating temperature (Note): Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V 10 A Capacitance CT V = 0V, f = 1 MHz 30 pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 V VCE = 24 V 0.01 0.1 A VCE = 24 V ,Ta = 85C 0.6 50 A V = 0V, f = 1 MHz 6 pF Min Typ. Max Unit 50 600 100 600 60 30 0.4 0.2 0.4 Min Typ. Max Unit 0.8 pF Collector dark current Capacitance (collector to emitter) ID(ICEO) CCE Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Saturated CTR Symbol IC / IF IC / IF (sat) Test Condition IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 0.4 V Rank GB Rank GB IC = 2.4 mA, IF = 8 mA Collector-emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB % % V Isolation Characteristics (Ta = 25C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0V, f = 1 MHz Isolation resistance RS VS = 500 V AC, 1 minute Isolation voltage BVS 12 1x10 10 14 5000 AC, 1 second, in oil 10000 DC, 1 minute, in oil 10000 3 Vrms Vdc 2012-02-20 TLP785,TLP785F Switching Characteristics (Ta = 25C) Characteristics Symbol Rise time tr Fall time tf Test Condition VCC = 10 V, IC = 2 mA RL = 100 Min Typ. Max 2 3 3 Turn-on time ton Turn-off time toff 3 Turn-on time ton 1.5 25 50 Storage time ts Turn-off time toff RL = 1.9 k VCC = 5 V, IF = 16 mA (fig. 1) Unit s s IF IF VCC RL ts VCE VCC 4.5V VCE 0.5V ton toff (fig. 1): Switching time test circuit Surface-Mount Lead Form Option TLP785(LF6) 11-5L106 TOSHIBA Weight: TLP785F(LF7) Unit: mm 11-5L107 TOSHIBA 0.31g (typ.) Weight: 4 Unit: mm 0.31g (typ.) 2012-02-20 TLP785,TLP785F Option: Specifications for Embossed-Tape Packing; (TP6)/(TP7) 1. Applicable Package Package Name Product Type DIP4LF6 TLP785 DIP4LF7 TLP785F 2. Product Naming System Type of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below. (Example) TLP785 (BL-TP6,F [[G]]/RoHS COMPATIBLE Tape type CTR Rank Device name (Example2) TLP785F (BL-TP7,F [[G]]/RoHS COMPATIBLE Tape type CTR Rank Device name 3. Tape Dimensions 3.1 Orientation of Device in Relation to Direction of Tape Movement Device orientation in the recesses is as shown in Figure 2. Tape feed P 1pin indication Figure2 Device Orientation 3.2 Tape Packing Quantity:2000 devices per reel 3.3 Empty Device Recesses Are as Shown in Table 1. Table1 Empty Device Recesses Occurrences of 2 or more successive empty device recesses Single empty recesses device Standard Remarks 0 Within any given 40-mm section of tape, not including leader and trailer 6 devices (max.) per reel Not including leader and trailer 3.4 Start and End of Tape The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes. 5 2012-02-20 TLP785,TLP785F 3.5 Tape Specification [1] TLP785(TP6) / TLP785F(TP7) (1)Tape material: Plastic (2)Dimensions: The tape dimensions are as shown in Figure 3. Unit: mm F W B A 1.5min T A B W F T TP6 Type 5.10.1 10.60.1 16.00.3 7.50.1 4.20.15 TP7Type 5.050.1 12.350.1 24.00.3 11.50.1 4.40.1 Figure 3 Tape Forms 6 2012-02-20 TLP785,TLP785F 3.6 Reel Specification [1] TLP785(TP6) / TLP785F(TP7) (1)Material: Plastic (2)Dimensions: The reel dimensions are as shown in Figure 4. 4.00.5 2.00.5 W2 330 max 1001.5 13.00.5 W1 W1 W2 TP6 Type 16.5 23max TP7 Type 24.4typ 30.4max Unit: mm Figure 4 Reel Forms 4. Packing Two reels of photocouplers are packed in a shipping carton. 5. Label Indication The carton bears a label indicating the product number, the symbol representing classification of standard, the quantity, the lot number and the Toshiba company name. 6. Ordering Information When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as shown in the following example. (Example) TLP785(BL-TP6,F 4000pcs. Quantity (must be a multiple of 4000) [[G]]/RoHS COMPATIBLE Tape type CTR Rank Device name (Note): The order code may be suffixed with a letter or a digit. Please contact your nearest Toshiba sales representative for more details. 7 2012-02-20 TLP785,TLP785F Soldering and Storage 1. Soldering 1.1 Soldering When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions. 1) Using solder reflow *Temperature profile example of lead (Pb) solders (C) This profile is based on the devices maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 240 210 160 140 less than 30s 60 to 120s Time (s) *Temperature profile example of using lead (Pb)-free solders (C) Package surface temperature 260 This profile is based on the devices maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. 230 190 180 60 to 120s 30 to 50s Time (s) 2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) Please preheat it at 150C between 60 and 120 seconds. Complete soldering within 10 seconds below 260C. Each pin may be heated at most once. 3) Using a soldering iron Complete soldering within 10 seconds below 260C, or within 3 seconds at 350C. Each pin may be heated at most once. 8 2012-02-20 TLP785,TLP785F 2. Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5C to 35C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. 9 2012-02-20 TLP785,TLP785F EN60747-5-2 `Option: (D4)' Attachment: Specification for EN60747-5-2 option: (D4) Types: TLP785, TLP785F Type designations for `option: (D4) ', which are tested under EN60747 requirements. Ex.: TLP785(D4-GR-LF6,F D4: EN60747 option GR: CTR rank name LF6: standard lead bend name F: [[G]]/RoHS COMPATIBLE Note: Use TOSHIBA standard type number for safety standard application. Ex. TLP785(D4-GR-LF6,F AE TLP785 EN60747 Isolation Characteristics Description Symbol Rating Unit Application classification Climatic classification Pollution degree Maximum operating insulation voltage Input to output test voltage, Vpr = 1.5xVIORM, type and sample test tp = 10s, partial discharge < 5pC Input to output test voltage, Vpr = 1.875xVIORM, 100% production test tp = 1s, partial discharge < 5pC TLP785 TLP785F TLP785 TLP785F TLP785 TLP785F Highest permissible overvoltage (transient overvoltage, tpr = 60s) Safety limiting values (max. permissible ratings in case of fault) current (input current) Psi = 0W power (output or total power dissipation) temperature Insulation resistance, I-IV I-III for rated mains voltage 300 Vrms for rated mains voltage 600 Vrms VIO = 500V,Ta=25C VIORM Vpr Vpr 2 890 1140 1335 Vpk Vpk 1710 1670 Vpk 2140 VTR 8000 Vpk Isi Psi Tsi 400 700 175 mA mW C Rsi 10 55 / 115 / 21 10 12 2012-02-20 TLP785,TLP785F Insulation Related Specifications 7.62mm pitch TLPxxx type 10.16mm pitch TLPxxxF type Minimum creepage distance Cr 7.0mm 8.0mm Minimum clearance Cl 7.0mm 8.0mm Minimum insulation thickness ti 0.4 mm CTI 175 Comparative tracking index (1) If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value. (e.g.at a standard distance between soldering eye centres of 7.5mm). If this is not permissible, the user shall take suitable measures. (2) This photocoupler is suitable for `safe electrical isolation' only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. VDE test sign: Marking on product for EN60747 4 Marking on packing for EN60747 Marking Example: TLP785, TLP785F P Lot No. Device Name CTR Rank Marking 4: Mark for option (D4) 1pin indication 11 2012-02-20 TLP785,TLP785F Figure 1 Partial discharge measurement procedure according to EN60747 Destructive test for qualification and sampling tests. Method A (for type and sampling tests, destructive tests) t1, t2 t3, t4 tp(Measuring time for partial discharge) tb tini Figure VINITIAL(8kV) V Vpr(1335V for TLP785) (1710V for TLP785F) = 1 to 10 s =1s = 10 s = 12 s = 60 s VIORM(890V for TLP785) (1140V for TLP785F) 0 t1 tini t3 tP t2 tb 2 Partial discharge measurement procedure according to EN60747 Non-destructive test for100% inspection. Method B t3, t4 tp(Measuring time for partial discharge) tb Vpr(1670V for TLP785) (2140V for TLP785F) V (for sample test,nondestructive test) VIORM(890V for TLP785) (1140V for TLP785F) = 0.1 s =1s = 1.2 s Isi (mA) t tP t3 Figure t t4 tb t4 3 Dependency of maximum safety ratings on ambient temperature 500 1000 400 800 Psi (mW) 600 300 A Isi 400 200 Psi AE 100 0 0 25 50 75 100 200 125 150 0 175 Ta (C) 12 2012-02-20 TLP785,TLP785F I F - Ta 100 P C - Ta 200 (mW) This curve shows the maximum limit to the forward current. 160 PC 60 Collector power dissipation Forward current I F (mA) 80 40 20 0 -20 0 20 40 60 Ambient temperature 80 Ta 100 120 120 80 This curve shows the 40 maximum limit to the collector power dissipation. 0 -20 0 20 60 80 Ambient temperature (C) Ta 100 120 (C) IF-VF V F / Ta - I F 100 -3 Ta=25C (mA) -2.6 10 IF -2.2 -1.8 Forward current Forward voltage temperature coefficient VF/Ta (mV/C) 40 -1.4 -1 1 0.1 -0.6 0.1 1 Forward current 10 IF 0.4 100 (mA) 0.9 1.4 Forward voltage VF 1.9 (V) IFP - VFP 1000 Pulse width10s (mA) Repetitive frequency=100Hz IFP 100 Pulse forward current Ta=25C 10 1 0 0.4 0.8 1.2 Pulse forward voltage 1.6 VFP 2 2.4 (V) *The above graphs show typical characteristic. 13 2012-02-20 TLP785,TLP785F IC-VCE I C E O - Ta 10 80 Ta=25C (mA) 1 60 50 30 IC 0.1 Collector current Collector dark current ID (mA) VCE =24V 0.01 0.001 20 15 40 10 20 5 I F= 2 m A 0.0001 0 0 20 40 60 Ambient temperature 80 100 0 2 4 6 8 Collector-emitter voltage Ta (C) VCE 10 (V) IC-IF IC-VCE 100 40 Ta=25C Ta=25C 30 20 Collector current IC Collector current (mA) 30 IC (mA) 50 15 20 10 5 10 10 1 I F= 2 m A 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage 1 VCE 0.1 1.2 (V) VCE=5V VCE=0.4V 0.01 0.1 IC/IF -IF 1 Collector-emitter voltage 10 VCE 100 (V) 1000 Current transfer ratio IC / IF (%) Ta=25C 100 10 VCE=5V VCE=0.4V 1 0.1 1 Forward current 10 IF 100 (mA) *The above graphs show typical characteristic. 14 2012-02-20 TLP785,TLP785F I C - Ta V C E ( s a t ) - Ta 100 0.2 IF=5mA, 20 Collector-Emitter saturation Voltage VCE(sat) (V) Collector current IC (mA) 10 5 10 1 1 IF=0.5mA VCE=5V IC=1mA 0.16 0.12 0.08 0.04 0 0.1 -40 -20 0 20 40 Ambient temperature 60 Ta 80 -40 100 (C) -20 0 20 40 Ambient temperature 60 Ta 80 100 (C) Switching time - RL 1000 Ta=25C IF=16mA VCC=5V toff Switching time (s) 100 ts 10 ton 1 1 10 Load resistance 100 RL (k) *The above graphs show typical characteristic. 15 2012-02-20 TLP785,TLP785F RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 16 2012-02-20