TLP785(GR,F) - Toshiba - Datasheet.Directory

TLP785,TLP785F

2012-02-20

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

TOSHIBA Photocoupler GaAs IRED & Photo−Transistor

TLP785,TLP785F

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission Between Different Voltage

Circuits

The TOSHIBA TLP785 consists of a silicone phototransistor optically

coupled to a gallium arsenide (GaAs) infrared emitting diode in a four

lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5kVRMS (min)).

TLP785F is a lead forming type for the long creepage surface mounting

of TLP785.

• TLP785: 7.62mm pitch type DIP4

• TLP785F: 10.16mm pitch type DIP4

• Collector-emitter voltage: 80V (min.)

• Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

• Isolation voltage: 5000Vrms (min.)

• UL approved: UL1577, file No. E67349

• BSI under application: BS EN60065:2002

BS EN60950-1:2006

• SEMKO under application:EN60065:2002

EN60950-1:2001, EN60335-1:2002

• Option(D4)type

VDE approved: DIN EN60747-5-2

(Note): When an EN60747-5-2 approved type is needed,

Please designate “Option (D4)”

• Construction mechanical rating

7.62mm Pitch

Standard Type

10.16mm Pitch

TLPxxxF Type

Creepage distance 7.0mm(min) 8.0mm(min)

Clearance 7.0mm(min) 8.0mm(min)

Insulation thickness 0.4mm(min) 0.4mm(min)

Inner creepage distance 4.0mm(min) 4.0mm(min)

Unit: mm

TOSHIBA 11-5L1

Weight: 0.32 g (typ.)

Unit: mm

TOSHIBA 11-5L102

Weight: 0.32g (typ.)

TLP785

Pin Configurations

(top view)

TLP785F

TLP785,TLP785F

2012-02-20

Current Transfer Ratio

Current Transfer Ratio (%)

(IC / IF)

IF = 5mA, VCE = 5V, Ta = 25°C

Type Classification

(Note 1)

Min Max

Marking of Classification

None 50 600 Blank

Rank Y 50 150 YE

Rank GR 100 300 GR

Rank BL 200 600 BL

Rank GB 100 600 GB

Rank YH 75 150 Y+

Rank GRL 100 200 G

Rank GRH 150 300 G+

TLP785

Rank BLL 200 400 B

(Note 1): Ex. rank GB: TLP785 (GB)

(Note 2): Application type name for certification test, please use standard product type name, i. e.

TLP785 (GB): TLP785

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 60 mA

Forward current derating (Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C

Pulse forward current (Note 3) IFP 1 A

Power dissipation PD 90 mW

Power dissipation derating ΔPD / °C −0.9 mW / °C

Reverse voltage VR 5 V

LED

Junction temperature Tj 125 °C

Collector−emitter voltage VCEO 80 V

Emitter−collector voltage VECO 7 V

Collector current IC 50 mA

Power dissipation (single circuit) PC 150 mW

Power dissipation derating

(Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C

Detector

Junction temperature Tj 125 °C

Operating temperature range Topr −55 to 110 °C

Storage temperature range Tstg −55 to 125 °C

Lead soldering temperature (10s) Tsol 260 °C

Total package power dissipation PT 240 mW

Total package power dissipation derating

(Ta ≥ 25°C) ΔPT / °C −2.4 mW / °C

Isolation voltage (Note 4) BVS 5000

Vrms

(Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 3): 100 μs pulse, 100 Hz frequency

(Note 4): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.

TLP785,TLP785F

2012-02-20

Recommended Operating Conditions (Note)

Characteristic Symbol Min Typ. Max Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA

Collector current IC ― 1 10 mA

Operating temperature Topr −25 ― 85 °C

(Note): Recommended operating conditions are given as a design guideline

to obtain expected performance of the device.

Additionally, each item is an independent guideline respectively.

In developing designs using this product, please confirm

specified characteristics shown in this document.

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Forward voltage VF I

F = 10 mA 1.0 1.15 1.3 V

Reverse current IR V

R = 5 V ― ― 10 μA

LED

Capacitance CT V = 0V, f = 1 MHz ― 30 ― pF

Collector−emitter

breakdown voltage V(BR) CEO I

C = 0.5 mA 80 ― ― V

Emitter−collector

breakdown voltage V(BR) ECO I

E = 0.1 mA 7 ― ― V

VCE = 24 V ― 0.01 0.1 μA

Collector dark current ID(ICEO)

VCE = 24 V ,Ta = 85°C ― 0.6 50 μA

Detector

Capacitance

(collector to emitter) CCE V = 0V, f = 1 MHz ― 6 ― pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

50 ― 600

Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V

Rank GB 100 ― 600

― 60 ―

Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V

Rank GB 30 ― ―

IC = 2.4 mA, IF = 8 mA ― ― 0.4

― 0.2 ―

Collector−emitter saturation

voltage VCE (sat) IC = 0.2 mA, IF = 1 mA

Rank GB ― ― 0.4

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Capacitance

(input to output) CS VS = 0V, f = 1 MHz ― 0.8 ― pF

Isolation resistance RS VS = 500 V 1×1012 1014 ― Ω

AC, 1 minute 5000 ― ―

AC, 1 second, in oil ― 10000 ―

Vrms

Isolation voltage BVS

DC, 1 minute, in oil ― 10000 ― Vdc

TLP785,TLP785F

2012-02-20

Switching Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Rise time tr ― 2 ―

Fall time tf ― 3 ―

Turn−on time ton ― 3 ―

Turn−off time toff

VCC = 10 V, IC = 2 mA

RL = 100Ω

― 3 ―

μs

Turn−on time ton ― 1.5 ―

Storage time ts ― 25 ―

Turn−off time toff

RL = 1.9 kΩ (fig. 1)

VCC = 5 V, IF = 16 mA

― 50 ―

μs

Surface-Mount Lead Form Option

TOSHIBA 11-5L106

Weight: 0.31g (typ.)

TOSHIBA 11-5L107

Weight: 0.31g (typ.)

Unit: mm

TLP785(LF6) TLP785F(LF7) Unit: mm

VCE

VCC

ton

4.5V

0.5V

toff

VCC

VCE

(fig. 1): Switching time test circuit

TLP785,TLP785F

2012-02-20

Option: Specifications for Embossed-Tape Packing; (TP6)/(TP7)

1. Applicable Package

Package Name Product Type

DIP4LF6 TLP785

DIP4LF7 TLP785F

2. Product Naming System

Type of package used for shipment is denoted by a symbol suffix after a product number. The method of

classification is as below.

(Example)

TLP785 (BL−TP6,F

[[G]]/RoHS COMPATIBLE

Tape type

CTR Rank

Device name

(Example2)

TLP785F (BL−TP7,F

[[G]]/RoHS COMPATIBLE

Tape type

CTR Rank

Device name

3. Tape Dimensions

3.1 Orientation of Device in Relation to Direction of Tape Movement

Device orientation in the recesses is as shown in Figure 2.

Figure2 Device Orientation

3.2 Tape Packing Quantity:2000 devices per reel

3.3 Empty Device Recesses Are as Shown in Table 1.

Table1 Empty Device Recesses

Standard Remarks

Occurrences of 2 or more

successive empty device

recesses

0 Within any given 40-mm section of

tape, not including leader and trailer

Single empty device

recesses 6 devices (max.) per reel Not including leader and trailer

3.4 Start and End of Tape

The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes.

Tape feed

1pin indication

TLP785,TLP785F

2012-02-20

3.5 Tape Specification

[1] TLP785(TP6) / TLP785F(TP7)

(1)Tape material: Plastic

(2)Dimensions: The tape dimensions are as shown in Figure 3.

Figure 3 Tape Forms

TP6 Type TP7Type

A 5.1±0.1 5.05±0.1

B 10.6±0.1 12.35±0.1

W 16.0±0.3 24.0±0.3

F 7.5±0.1 11.5±0.1

T 4.2±0.15 4.4±0.1

φ1.5min

Unit: mm

TLP785,TLP785F

2012-02-20

3.6 Reel Specification

[1] TLP785(TP6) / TLP785F(TP7)

(1)Material: Plastic

(2)Dimensions: The reel dimensions are as shown in Figure 4.

Figure 4 Reel Forms

4. Packing

Two reels of photocouplers are packed in a shipping carton.

5. Label Indication

The carton bears a label indicating the product number, the symbol representing classification of standard, the

quantity, the lot number and the Toshiba company name.

6. Ordering Information

When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as

shown in the following example.

(Example)

TLP785(BL−TP6,F 4000pcs.

Quantity (must be a multiple of 4000)

[[G]]/RoHS COMPATIBLE

Tape type

CTR Rank

Device name

(Note): The order code may be suffixed with a letter or a digit.

Please contact your nearest Toshiba sales representative for more details.

330 max

100±1.5

13.0±0.5

4.0±0.5

2.0±0.5

Unit: mm

TP6 Type TP7 Type

W1 16.5ｔｙｐ 24.4typ

W2 23max 30.4max

TLP785,TLP785F

2012-02-20

Soldering and Storage

1. Soldering

1.1 Soldering

When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as

much as possible by observing the following conditions.

1) Using solder reflow

·Temperature profile example of lead (Pb) solders

·Temperature profile example of using lead (Pb)-free solders

2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)

Please preheat it at 150°C between 60 and 120 seconds.

Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.

3) Using a soldering iron

Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin

may be heated at most once.

Time (s)

(°C)

240

210

160

60 to 120s less than 30s

Package surface temperature

140

Time (s)

(°C)

260

230

190

60 to 120s 30 to 50s

180

Package surface temperature

This profile is based on the devices

maximum heat resistance guaranteed value.

Set the preheat temperature/heating

temperature to the optimum temperature

corresponding to the solder paste type used

by the customer within the described profile.

This profile is based on the devices

maximum heat resistance guaranteed value.

Set the preheat temperature/heating

temperature to the optimum temperature

corresponding to the solder paste type used

by the customer within the described profile.

TLP785,TLP785F

2012-02-20

2. Storage

1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.

2) Follow the precautions printed on the packing label of the device for transportation and storage.

3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,

respectively.

4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty

conditions.

5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during

storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the

solderability of the leads.

6) When restoring devices after removal from their packing, use anti-static containers.

7) Do not allow loads to be applied directly to devices while they are in storage.

8) If devices have been stored for more than two years under normal storage conditions, it is recommended

that you check the leads for ease of soldering prior to use.

TLP785,TLP785F

2012-02-20

EN60747-5-2 ‘Option: (D4)’

Attachment: Specification for EN60747-5-2 option: (D4)

Types: TLP785, TLP785F

Type designations for ‘option: (D4) ’, which are tested under EN60747 requirements.

Ex.: TLP785(D4-GR-LF6,F D4: EN60747 option

GR: CTR rank name

LF6: standard lead bend name

F: [[G]]/RoHS COMPATIBLE

Note: Use TOSHIBA standard type number for safety standard application.

Ex. TLP785(D4-GR-LF6,F Æ TLP785

EN60747 Isolation Characteristics

Description Symbol Rating Unit

Application classification

for rated mains voltage ≤ 300 Vrms

for rated mains voltage ≤ 600 Vrms

I−IV

I−III

―

Climatic classification

55 / 115 / 21 ―

Pollution degree 2 ―

TLP785 890

Maximum operating insulation voltage

TLP785F

VIORM

1140

Vpk

TLP785 1335

Input to output test voltage,

Vpr = 1.5×VIORM, type and sample test

p = 10s, partial discharge < 5pC TLP785F

Vpr

1710

Vpk

TLP785 1670

Input to output test voltage,

Vpr = 1.875×VIORM, 100% production test

p = 1s, partial discharge < 5pC TLP785F

Vpr

2140

Vpk

Highest permissible overvoltage

(transient overvoltage, tpr = 60s) VTR 8000 Vpk

Safety limiting values (max. permissible ratings in case of fault)

current (input current) Psi = 0ｍW

power (output or total power dissipation)

temperature

Isi

Psi

Tsi

400

700

175

°C

Insulation resistance, VIO = 500V,Ta=25°C Rsi ≥1012 Ω

TLP785,TLP785F

2012-02-20

Insulation Related Specifications

7.62mm pitch

TLPxxx type

10.16mm pitch

TLPxxxF type

Minimum creepage distance Cr 7.0mm 8.0mm

Minimum clearance Cl 7.0mm 8.0mm

Minimum insulation thickness ti 0.4 mm

Comparative tracking index CTI 175

(1) If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this

value. (e.g.at a standard distance between soldering eye centres of 7.5mm). If this is not permissible,

the user shall take suitable measures.

(2) This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.

Maintenance of the safety data shall be ensured by means of protective circuits.

VDE test sign: Marking on product

for EN60747

Marking on packing

for EN60747

Marking Example: TLP785, TLP785F

CTR Rank Marking

Lot No.

Device Name

4: Mark for option (D4)

1pin indication

TLP785,TLP785F

2012-02-20

Figure

1 Partial discharge measurement procedure according to EN60747

Destructive test for qualification and sampling tests.

Method A

(for type and sampling tests,

destructive tests)

t1, t2

t3, t4

tp(Measuring time for

partial discharge)

tini

VVINITIAL(8kV)

Vpr(1335V for TLP785)

(1710V for TLP785F)

VIORM(890V for TLP785)

(1140V for TLP785F)

t1tini

= 1 to 10 s

= 1 s

= 10 s

= 12 s

= 60 s

Vpr(1670V for TLP785)

(2140V for TLP785F)

VIORM(890V for TLP785)

(1140V for TLP785F)

t3t4

Figure 2 Partial discharge measurement procedure according to EN60747

Non-destructive test for100% inspection.

Method B

(for sample test,non-

destructive test)

t3, t4

tp(Measuring time for

partial discharge)

= 0.1 s

= 1 s

= 1.2 s

Figure

3 Dependency of maximum safety ratings on ambient temperature

500

400

300

200

100

0 25 50 75 100 125 150 175

1000

800

600

400

200

Ta (°C)

Psi Æ

Å Isi

Isi

(mA)

Psi

(

)

TLP785,TLP785F

2012-02-20

IF-Ta PC-Ta

Forward current I F (mA)

100

-20 0 20 40 60 80 100 120

Collector power dissipation PC (mW)

120

160

200

-20 0 20 40 60 80 100 120

Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

∆VF/∆Ta-I F IF-VF

Forward voltage temperature coefficient

ΔVF/ΔTa (mV/°C)

-3

-2.6

-2.2

-1.8

-1.4

-1

-0.6

0.1 1 10 100

Forward current IF (mA)

0.1

100

0.4 0.9 1.4 1.9

Forward current IF (mA) Forward voltage VF (V)

IFP – VFP

Pulse forward current IFP (mA)

100

1000

0 0.4 0.8 1.2 1.6 2 2.4

Pulse forward voltage VFP (V)

*The above graphs show typical characteristic.

Pulse width≤10μs

Repetitive frequency=100Hz

Ta=25°C

This curve shows the maximum

limit to the forward current.

This curve shows the

maximum limit to the

collector power dissipation.

Ta=25˚C

TLP785,TLP785F

2012-02-20

ICEO-Ta

IC-VCE

Collector dark current ID (mA)

0.0001

0.001

0.01

0.1

0 20406080100

Collector current IC (mA)

0246810

Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

IC-VCE IC-IF

Collector current IC (mA)

0 0.2 0.4 0.6 0.8 1 1.2

Collector current IC (mA)

Collector-emitter voltage VCE (V)

0.01

0.1

100

0.1 1 10 100

IC/IF -IF Collector-emitter voltage VCE (V)

Current transfer ratio IC / IF (%)

100

1000

0.1 1 10 100

Forward current IF (mA)

*The above graphs show typical characteristic.

Ta=25˚C

IF=2mA

VCE=5V

VCE=0.4V

Ta=25˚C

IF=2mA

CE=5V

VCE=0.4V

Ta=25˚C

VCE =24V

TLP785,TLP785F

2012-02-20

IC - Ta VCE(sat) - Ta

Collector current IC (mA)

0.1

100

-40-20 0 20406080100

Collecto

-Emitter saturation Voltage

VCE(sat) (V)

0.04

0.08

0.12

0.16

0.2

-40 -20 0 20 40 60 80 100

Ambient temperature Ta (°C)

Switching time - RL

Switching time (μs)

100

1000

1 10 100

Load resistance RL (kΩ)

*The above graphs show typical characteristic.

IF=5mA,

IC=1mA

=0.5m

toff

Ta=25˚C

IF=16mA

VCC=5V

ton

VCE=5V

TLP785,TLP785F

2012-02-20

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• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

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