1998©
Document No. D13536EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
AC03DGM, AC03FGM
3 A MOLD TRIAC
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The AC03EGM and AC03FGM are fully diffused mold TRIACs
with an effective on-current of 3 A. The repeat peak off-voltages
are 400 V and 600 V.
FEATURES
• Gate trigger current (mode I, III, and IV) at 12 mA or less is
guaranteed.
• This transistor features a small and lightweight package and is
easy to handle even on the mounting surface due to its TO-
202AA dimensions. Processing of lead wires and heatsink
(tablet) using jigs is also possible.
• High degrees-of-freedom applications design is available due to
high gate trigger sensitivity and small hold current distribution.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of motor speed control, heater
temperature control, lamp light control
PACKAGE DRAWING (UNIT: mm)
*TC test bench-mark Standard weight: 1.4 g
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol AC03DGM AC03FGM Unit Remarks
Non-repetitive peak off-state voltage VDSM 500 700 V −
Repetitive peak off-voltage VDRM 400 600 V −
Effective on-state current IT(RMS) 3 (TC = 92°C) A Refer to Figures
11 and 12.
Surge on-state current ITSM 30 (50 Hz 1 cycle)
33 (60 Hz 1 cycle)
A Refer to Figure 2.
Fusing current ƒiT2dt 4.0 (1 ms ≤ t ≤ 10 ms) A2S−
Critical rate of rise of on-state
current
dIT/dt 40 A/
µ
s−
Peak gate power dissipation PGM 3 (f ≥ 50 Hz, Duty ≤ 10 %) W −
Average gate power dissipation PG(AV) 0.3 W −
Peak gate current IGM ±0.5 (f ≥ 50 Hz, Duty ≤ 10 %) A −
Junction temperature Tj−40 to +125 °C−
Storage temperature Tstg −55 to +150 °C−
Data Sheet D13536EJ3V0DS
2
AC03DGM, AC03FGM
ELECTRICAL CHARACTERISTICS (Tj = 25°
°°
°C, RGK = 1 kΩ
ΩΩ
Ω)
Parameter Symbol Conditions MIN. TYP. MAX. Unit Remarks
Tj = 25°C−−
100
µ
A
Repeat peak off-current IDRM VDM = VDRM Tj = 125°C−−1mA
−
On-state voltage VTM ITM = 5 A −−
1.8 V Refer to
Figure 1.
Mode I T2 +, G+ −−
12
II T2 −, G+ −−−
III T2 −, G−−−
12
Gate trigger
current
IV
IGT
VDM = 12 V
RL = 30 Ω
T2 +, G−−−
12
mA Refer to
Figure 4.
Mode I T2 +, G+ −−
1.5
II T2 −, G+ −−−
III T2 −, G−−−
1.5
Gate trigger
voltage
IV
VGT
VDM = 12 V
RL = 30 Ω
T2 +, G−−−
1.5
VRefer to
Figure 4.
Gate non-trigger voltage VGD Tj = 125°C, VDM = 1
2 VDRM 0.2 −−
V−
Hold current IHVDM = 24 V, ITM = 5 A −10 −mA −
Critical rate of rise of off-
state voltage dv/dt Tj = 125°C, VDM = 2
3 VDRM −100 −V/
µ
s−
Commutating critical rate of
rise of off-state voltage (dv/dt)c
Tj = 125°C
(diT/dt)c = −1.6 A/ms
VD = 400 V
5−−V/
µ
s−
Rth(j−c) Junction-to-case AC −−
10 °C/W
Thermal resistance* Rth(j−a) Junction-to-ambient AC −−
75 °C/W
Refer to
Figure 13.
* The thermal resistance at 50 Hz and 60 Hz sine wave current, which is shown on the following expression:
Rth(j−c) = Tj(max)–TC
PT(AV) T
j(max) :Maximum junction temperature
TC:Case temperature
PT(AV) :Average on-dissipation
Data Sheet D13536EJ3V0DS 3
AC03DGM, AC03FGM
Data Sheet D13536EJ3V0DS
4
AC03DGM, AC03FGM
Data Sheet D13536EJ3V0DS 5
AC03DGM, AC03FGM
[MEMO]
AC03DGM, AC03FGM
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
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