MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 13.5 dB Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 39 dBc @ 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched, Controlled Q, for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 28 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S21130HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S21130HSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 372 2.13 W W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C CW 92 W Symbol Value (1) Unit CW Operation THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 92 W CW Case Temperature 80C, 28 W CW RJC 0.44 0.47 C/W (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MRF5S21130HR3 MRF5S21130HSR3 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M4 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.5 2.7 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) VGS(Q) -- 3.7 -- Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) -- 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.5 -- S Crss -- 2.6 -- pF Freescale Semiconductor, Inc... OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 12 Drain Efficiency D 24 Intermodulation Distortion IM3 Adjacent Channel Power Ratio Input Return Loss 13.5 -- dB 26 -- % - 37 - 35 dBc ACPR -- - 39 - 37 dBc IRL -- - 12 -9 dB (1) Part is internally matched both on input and output. MRF5S21130HR3 MRF5S21130HSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. R1 VBIAS + C13 C11 + C1 R2 C3 + C15 + C20 VSUPPLY C9 C5 Z9 Z7 RF INPUT Z1 Z2 C7 Z3 Z4 DUT Z8 Z11 C18 Z12 Z13 Z14 Z15 Z16 RF OUTPUT Z5 C17 Z10 C8 C19 Z6 C10 C6 Freescale Semiconductor, Inc... Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 + C14 C12 + C2 + C16 C4 0.500 x 0.083 Microstrip 0.995 x 0.083 Microstrip 0.905 x 0.083 Microstrip 0.159 x 1.024 Microstrip 0.117 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.000 Microstrip Z9, Z10 Z11 Z12 Z13 Z14, Z15 Z16 PCB 0.709 x 0.083 Microstrip 0.415 x 1.000 Microstrip 0.531 x 0.083 Microstrip 0.994 x 0.083 Microstrip 0.070 x 0.220 Microstrip 0.430 x 0.083 Microstrip Taconic TLX8, 0.030, r = 2.55 Figure 1. MRF5S21130HR3(HSR3) Test Circuit Schematic Table 1. MRF5S21130HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C13, C14, C15, C16 10 F, 35 V Tantalum Capacitors 293D1106X9035D Vishay - Sprague C3, C4, C11, C12 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay - Vitramon C5, C6, C7, C9, C10, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C8 0.1 pF 100B Chip Capacitor 100B0R1BW ATC C17 0.5 pF 100B Chip Capacitor 100B0R5BW ATC C20 220 F, 63 V Electrolytic Capacitor, Radial 13668221 Philips R1, R2 1 kW, 1/4 W Chip Resistors MOTOROLA RF DEVICE DATA MRF5S21130HR3 MRF5S21130HSR3 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. C1 C9 C3 C11 C20 C13 C15 R1 R2 CUT OUT AREA C7 C5 C8 C18 C17 C19 Freescale Semiconductor, Inc... C6 C2 C4 C10 C12 C14 C16 MRF5S21130 Rev 0 Figure 2. MRF5S21130HR3(HSR3) Test Circuit Component Layout MRF5S21130HR3 MRF5S21130HSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 30 D 12 25 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 11 10 IRL 20 -28 9 -32 IM3 8 7 IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 13 -36 ACPR 6 2060 -40 2080 2100 2120 2140 2160 2180 2200 -44 2220 -10 -15 -20 -25 -30 IRL, INPUT RETURN LOSS (dB) 35 Gps D, DRAIN EFFICIENCY (%) 14 -25 IDQ = 1600 mA G ps , POWER GAIN (dB) 14.5 1400 mA 14 1200 mA 13.5 1000 mA 800 mA 13 12.5 12 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 11.5 11 1 10 100 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 15 -30 -35 IDQ = 1600 mA -40 1400 mA 1200 mA -45 -50 800 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing -55 1000 mA -60 -65 1000 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1000 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power -25 58 3rd Order -30 57 Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance -35 -40 5th Order -45 7th Order -50 -55 VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA Two-Tone Measurements, Center Frequency = 2140 MHz -60 0.1 1 10 Ideal 56 P3dB = 53.02 dBm (200.5 W) 55 54 P1dB = 52.5 dBm (178 W) 53 Actual 52 VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 5 sec(on), 1 msec(off) Center Frequency = 2140 MHz 51 100 50 35 37 39 41 43 45 TWO-TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF5S21130HR3 MRF5S21130HSR3 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 109 -20 D VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 30 25 -25 -30 IM3 ACPR 20 -35 Gps 15 -40 10 -45 5 -50 0 5 10 15 20 25 30 35 40 -55 45 IM3 (dBc), ACPR (dBc) MTTF FACTOR (HOURS x AMPS 2 ) D, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 35 108 107 106 100 120 Pout, OUTPUT POWER (WATTS) AVG. (W-CDMA) 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (C) Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature TYPICAL CHARACTERISTICS W - CDMA TEST SIGNAL -20 100 3.84 MHz Channel BW -30 10 -40 -50 1 -60 (dB) PROBABILITY (%) Freescale Semiconductor, Inc... TYPICAL CHARACTERISTICS 0.1 -70 -80 0.01 -90 -110 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -120 -25 -20 -100 0.001 0.0001 0 2 4 6 8 10 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) PEAK-TO-AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal Figure 11. 2-Carrier W-CDMA Spectrum MRF5S21130HR3 MRF5S21130HSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com Freescale Semiconductor, Inc. f = 2200 MHz Freescale Semiconductor, Inc... f = 2080 MHz Zload* Zo = 25 f = 2080 MHz f = 2200 MHz Zsource VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg. f MHz Zsource Zload 2080 2.87 - j9.49 1.51 - j2.97 2110 3.13 - j9.86 1.52 - j2.54 2140 4.05 - j10.90 1.59 - j2.68 2170 4.80 - j11.75 1.62 - j2.70 2200 5.55 - j11.87 1.54 - j3.13 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5S21130HR3 MRF5S21130HSR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF5S21130HR3 MRF5S21130HSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA MRF5S21130HR3 MRF5S21130HSR3 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF5S21130HR3 MRF5S21130HSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED M B (FLANGE) 3 K bbb M D T A B M M (INSULATOR) M bbb M T A M B M ccc M T A M B M N Freescale Semiconductor, Inc... DIM A B C D E F G H K M N Q R S aaa bbb ccc 2 R ccc M T A M B S (LID) aaa M T A M (LID) M (INSULATOR) B M H C E T A (FLANGE) SEATING PLANE CASE 465B - 03 ISSUE B NI - 880 MRF5S21130HR3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K DIM A B C D E F H K M N R S aaa bbb ccc 2 bbb bbb M M D T A T A M M B M M (INSULATOR) B M T A M B R ccc M N ccc MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F A INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF M T A M S (LID) aaa M B M T A M B (LID) M (INSULATOR) M H INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE C F E T A A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465C - 02 ISSUE A NI - 880S MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130HSR3 11 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5S21130HR3 MRF5S21130HSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, MRF5S21130H/D 12 Go to: www.freescale.com