MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
Magn
aChip Semicond
uctor Ltd
.
1
Parameter
V
alue
Unit
V
DS
@
T
j,max
650
V
R
DS(on),max
0
.3
8
Ω
V
TH
,typ
3
V
I
D
11
A
Q
g,typ
28
nC
Order Code
Marking
T
emp. Range
Package
Packing
RoHS Status
MM
D60R360PBRH
60R360P
●
-55 ~ 150
℃
TO
-
252
(DP
AK)
Reel
Halogen Free
MM
D60R3
60
PB
600V 0.38
Ω
N-channel MOSFET
Description
MMD60R
360PB is power MOSFE
T usin
g magnachip
’
s advanced supe
r junction te
chnology that
can realize v
ery low on-resistance and
gate charge
. It will provide much hi
gh effici
ency by using
optimized char
ge coupling technolo
gy
. These user
friendly
devices give an adv
antage of Low EM
I to
designers as w
ell as low
switching loss.
Features
Low Pow
er Loss by High Speed Sw
itching and Low
On-Resistance
100%
Av
alanche
T
es
ted
Green Packa
ge
–
Pb Free Plating, Halo
gen Free
Key Parameters
Ordering
Informatio
n
Applications
PFC Pow
er Supply Stages
Switching
Applications
Adapter
Motor Control
DC
–
DC Converters
D
G
S
G
D
S
Package & Internal
Circui
t
TO
-
252
(DP
AK)
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
Magn
aChip Semicond
uctor Ltd
.
2
Parameter
Symbol
Rating
Unit
Note
Drain
–
Source vol
tage
V
DSS
600
V
Gate
–
Source vol
tage
V
GSS
±
30
V
Continuous drain
current
I
D
11
A
T
C
=25
℃
6.95
A
T
C
=100
℃
Pulsed drain cu
rrent
(1)
I
DM
33
A
Power dissi
pation
P
D
83
W
Single - pulse aval
anche energy
E
AS
220
mJ
MOSFE
T dv/dt rugged
ness
dv/dt
50
V/ns
Diode dv
/dt ruggedness
dv/dt
15
V/ns
Storage tempera
ture
T
stg
-55 ~150
℃
Maximum operatin
g junction
temperature
T
j
150
℃
1)
Pulse width t
P
limited by T
j,m
ax
2)
I
SD
≤
I
D
, V
DS peak
≤
V
(BR)DSS
Parameter
Symbol
V
alue
Unit
Thermal resistanc
e, junction-case max
R
thjc
1.5
℃
/W
Thermal resistanc
e, junction-ambient max
R
thja
62.5
℃
/W
Thermal Character
istics
Absolute Maximum
Rating (T
c
=2
5
℃
unless oth
erw
ise specified)
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
MagnaCh
ip Semiconductor L
td
.
3
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Drain
–
Source
Breakdow
n voltage
V
(BR)D
SS
600
-
-
V
V
GS
= 0V
,
I
D
=0.25mA
Gate
Threshold V
oltage
V
GS
(th)
2
3
4
V
V
DS
= V
GS,
I
D
=0.25mA
Zero Gate V
oltage
Drain Current
I
D
SS
-
-
1
μ
A
V
DS
= 600V
,
V
GS
= 0V
Gate Leakage
Current
I
GSS
-
-
100
nA
V
GS
=
±3
0V
,
V
DS
=0V
Drain-Source On
State Resistance
R
DS(ON)
-
0.35
0.38
Ω
V
GS
= 10V
, I
D
=
3.8A
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Input Capacitance
C
iss
-
890
-
pF
V
DS
= 25V
, V
GS
= 0V
,
f = 1.0M
Hz
Output Capacitance
C
oss
-
670
-
Reverse
T
ransfer Capacitance
C
rss
-
40
-
Effectiv
e Output Capaci
tance
Energy Related
(3)
C
o(er)
-
26
-
V
DS
= 0V to 480V
,
V
GS
= 0V
,f = 1.0M
Hz
T
urn On
Delay
T
ime
t
d(on)
-
18
-
ns
V
GS
= 10V
,
R
G
= 25Ω,
V
DS
= 300V
, I
D
= 1
1A
Rise
T
ime
t
r
-
40
-
T
urn Of
f
Delay
Time
t
d(off)
-
80
-
Fall
T
ime
t
f
-
30
-
T
otal Gate Char
ge
Q
g
-
28
-
nC
V
GS
= 10V
,
V
DS
= 480V
,
I
D
= 1
1A
Gate
–
Source Cha
rge
Q
gs
-
7
-
Gate
–
Drain Char
ge
Q
gd
-
10
-
Gate Resistance
R
G
-
3.5
-
Ω
V
GS
= 0V
,
f = 1.0M
Hz
3) C
o(er)
is a capacitance that gives the same stored energy as C
OSS
while V
DS
is
rising from 0V to 80% V
(BR)DSS
Static Characterist
ics (T
c
=25
℃
unless
otherw
ise specified)
Dynamic Characteri
stics (T
c
=25
℃
unle
ss otherwise speci
fied)
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
MagnaCh
ip Semiconductor L
td
.
4
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Continuous Diod
e Forward
Current
I
SD
-
-
11
A
Diode Forw
ard Voltage
V
SD
-
-
1.4
V
I
SD
= 11 A, VGS
= 0 V
Reverse Recov
ery Time
t
rr
-
375
-
ns
I
SD
= 11 A
di/dt = 100 A/μs
V
DD
= 100 V
Reverse Recov
ery Charge
Q
rr
-
4.1
-
μ
C
Reverse Recov
ery Current
I
rrm
-
21.8
-
A
Reverse Diode Ch
aracteristics (
T
c
=25
℃
unless otherw
ise specified)
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
MagnaCh
ip Semiconductor L
td
.
5
Characteristic Gra
ph
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
MagnaCh
ip Semiconductor L
td
.
6
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
MagnaCh
ip Semiconductor L
td
.
7
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
MagnaCh
ip Semiconductor L
td
.
8
T
est Circuit
V
DS
10V
1mA
DUT
100K
Ω
10V
Same type as DUT
+
-
V
DD
DUT
+
-
Same type as DUT
V
DS
+
-
I
S
R
g
10K
Ω
V
gs
±
15V
L
I
F
V
DD
DUT
+
-
I
D
V
DS
V
gs
t
p
R
L
V
DD
DUT
+
-
I
AS
V
DS
R
g
V
gs
t
p
L
10V
V
GS
Charge
Q
g
Q
gs
Q
gd
V
DS
V
GS
90%
10%
T
d(on)
t
r
t
on
T
d(off)
t
f
t
off
V
DD
t
p
t
AV
V
DS(t)
BV
DSS
I
AS
Rds(on) * I
AS
t
rr
t
a
t
b
I
FM
I
RM
d
i
/d
t
0.25 I
RM
0.75 I
RM
0.5 I
RM
V
R
V
RM(REC)
Fig15-1. Gate charge measurement circuit
Fig15-2. Gate charge waveform
Fig16-1. Diode reverse recovery test circuit
Fig16-1. Diode reverse recovery test waveform
Fig17-1. Switching time test circuit for resistive load
Fig17-2. Switching time waveform
Fig18-1. Unclamped inductive load test circuit
Fig18-2. Unclamped inductive waveform
R
g
25
Ω
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
MagnaCh
ip Semiconductor L
td
.
9
Physical Dimension
TO
-252 (D-P
AK)
, 3L
Dimensions are in mil
limeters, un
less otherwise
specified
W
orld
w
ide
S
a
l
e
s
S
uppo
rt Loca
tions
MM
D60R360P
B Datasheet
Ju
l.
201
4 Revision
1.0
MagnaCh
ip Semiconductor L
td
.
10
DISCLAIMER:
The
Products
are
not
des
igned
for
use
in
ho
stile
environments,
including,
without
limita
tion,
aircraft,
nu
clear
power
generation,
medical
appliances,
and
devices
or
systems
in
which
malfunction
of
any
Product
can
reasonably
be
expected
to
result
in
a
personal
in
jury.
Seller’s
customers
using
or
selling
Seller’s
products
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip
reserves the
right
to
change the
specifications and c
ircuitry without notice
at
any
time.
Mag
naChip does
not
consid
e
r
responsibili
ty
for
use
o
f
any
circuitry
other
tha
n
circuitry
entirely
included
in
a
MagnaChip
product.
is
a
registered
trademark
of
MagnaChip
Semiconductor
Ltd.
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