2SK3498
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3498
DC-DC Converter, Relay Drive and Motor Drive
Applications
• Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 0.6 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 400 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 400 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 400 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 1
Drain current
Pulse (Note 1) IDP 3
A
Drain power dissipation (Tc = 25°C) PD 20 W
Single pulse avalanche energy
(Note 2)
EAS 113 mJ
Avalanche current IAR 1 A
Repetitive avalanche energy (Note 3) EAR 2 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to150 °C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 183 mH, RG = 25 Ω,
IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC ―
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
2SK3498
2002-09-04
2
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ±10 µA
Drain-source breakdown voltage V (BR) GSS I
G = ±10 µA, VDS = 0 V ±30 V
Drain cut-OFF current IDSS V
DS = 400 V, VGS = 0 V 100 µA
Drain-source breakdown voltage V (BR) DSS I
D = 10 mA, VGS = 0 V 450 V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 0.5 A 4.2 5.5 Ω
Forward transfer admittance Yfs V
DS = 10 V, ID = 0.5 A 0.3 0.6 S
Input capacitance Ciss 145
Reverse transfer capacitance Crss 35
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
80
pF
Rise time tr 14
Turn-ON time ton 56
Fall time tf 26
Switching time
Turn-OFF time toff
75
ns
Total gate charge
(gate-source plus gate-drain) Qg 5.7
Gate-source charge Qgs 3.0
Gate-drain (“miller”) charge Qgd
VDD ∼
−320 V, VGS = 10 V, ID = 1 A
2.7
nC
Source-Drain Ratings and Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) IDR 1 A
Pulse drain reverse current (Note 1) IDRP 3 A
Forward voltage (diode) VDSF I
DR = 1 A, VGS = 0 V −1.7 V
Reverse recovery time trr 650 ns
Reverse recovery charge Qrr
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/µs 14.6 µC
Marking
※
Type
K3498
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
Duty
<
=1%, tw = 10 µs
RL = 400 Ω
0 V
10 V
VGS
VDD ∼
−200 V
ID = 0.5 A
VOUT
50 Ω
2SK3498
2002-09-04
3
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000707EA
A
RESTRICTIONS O N PRODUCT USE
