TSOP341..LL1
Document Number 82199
Rev. 1.1, 31-Jan-05
Vishay Semiconductors
www.vishay.com
1
16644
23
1
Photo Modules for PCM Remote Control Systems
Description
The TSOP341..LL1 - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefits are
the low supply voltage of 3 V and the compatibility to
all kind of data formats.
Features
• Internal filter for PCM frequency
• Improved shielding against electrical field
disturbance
• TTL and CMOS compatibility
• Low supply voltage: 3 V
• Low power consumption
• High immunity against ambient light
• Enhanced data rate up to 4000 bit/s
• Operation with short short bursts possible
(≥ 6 cycles/burst)
Parts Table
Block Diagram
Application Circuit
Part Carrier Frequency
TSOP34130LL1 30 kHz
TSOP34133LL1 33 kHz
TSOP34136LL1 36 kHz
TSOP34137LL1 36.7 kHz
TSOP34138LL1 38 kHz
TSOP34140LL1 40 kHz
TSOP34156LL1 56 kHz
30 kΩ
2
3
1
V
S
OUT
Demo-
GND
Pass
AGCInput
PIN
Band dulator
Control Circuit
16833
C1=
4.7 µF
TSOPxxxx
OUT
GND
Circuit
µC
R1=100Ω
+V
S
GND
Transmitter
with
TSALxxxx V
S
R
1
+C
1
recommended to suppress power supply
disturbances.
V
O
R2>=
10 kΩ
R
2
optional for improved pulse forming.
e3
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Document Number 82199
Rev. 1.1, 31-Jan-05
TSOP341..LL1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage (Pin 3) VS- 0.3 to + 6.0 V
Supply Current (Pin 3) IS5mA
Output Voltage (Pin 1) VO- 0.3 to + 6.0 V
Output Current (Pin 1) IO5mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg - 25 to + 85 °C
Operating Temperature Range Tamb - 25 to + 85 °C
Power Consumption (Tamb ≤ 85 °C) Ptot 50 mW
Soldering Temperature t ≤ 5 s, 1 mm from case Tsd 260 °C
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current VS = 3 V, Ev = 0 ISD 0.8 1.3 1.5 mA
VS = 3 V,
Ev = 40 klx, sunlight
ISH 1.4 mA
Supply Voltage Tamb = - 25 °C to + 85 °C VS2.7 3.6 V
Tamb = 0 °C to + 60 °C,
Ev < 30 klx, sunlight
VS2.4 3.6 V
Transmission Distance Ev = 0, test signal see fig.1,
IR diode TSAL6200,
IF = 400 mA
d35m
Output Voltage Low (Pin 4) IOsL = 0.5 mA,Ee = 0.7 mW/m2VOSL 250 mV
Minimum Irradiance (30 - 40
kHz)
Pulse width tolerance:
tpi - 4/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.35 0.5 mW/m2
Minimum Irradiance (56 kHz) Pulse width tolerance:
tpi - 4/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.4 0.6 mW/m2
Maximum Irradiance tpi - 4/fo < tpo < tpi + 6/foEe max 30 W/m2
Directivity Angle of half transmission
distance
ϕ1/2 ±45 deg
TSOP341..LL1
Document Number 82199
Rev. 1.1, 31-Jan-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Output Function
Figure 2. Output Function
Figure 3. Pulse Length and Sensitivity in Dark Ambient
E
e
T
t
pi
*) t
V
O
V
OH
V
OL
t
po2)
t
14337
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
Output Signal
t
d1)
1)
3/f
0
< t
d
< 9/f
0
2)
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
*) t
pi
w6/fo is recommended for optimal function
E
e
t
V
O
V
OH
V
OL
t
600 ms 600 ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
t – Output Pulse Width ( ms )
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.1 1.0 10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16907
po
Input Burst Duration
l= 950 nm,
optical test signal, fig.1
Output Pulse
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T ,T – Output Pulse Width ( ms )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16910
To ff
l= 950 nm,
optical test signal, fig.3
To n
on off
0.7 0.8 0.9 1.0 1.1
f/f
0
– Relative Frequency
1.3
94 9102
0.0
0.2
0.4
0.6
0.8
1.0
1.2
f = f
0
"5%
Df ( 3dB ) = f
0
/7
E / E – Rel. Responsivity
e min e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.10 1.00 10.00 100.00
E – DC Irradiance (W/m
2
)
96 12111
e min
E –Threshold Irradiance(mW/m )
2
Correlationwith ambient light sources
(Disturbance effect): 10W/m
2
≅1.4 klx
(Stand.illum.A, T = 2855 K) ≅8.2 klx
(Daylight,T= 5900K)
Ambient, λ= 950 nm
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Document Number 82199
Rev. 1.1, 31-Jan-05
TSOP341..LL1
Vishay Semiconductors
Figure 7. Sensitivity vs. Electric Field Disturbances
Figure 8. Sensitivity vs. Supply Voltage Disturbances
Figure 9. Sensitivity vs. Ambient Temperature
E – Threshold Irradiance ( mW/m )
0.0 0.4 0.8 1.2 1.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
e min 2
f(E) = f
0
0.01 0.1 1 10 100
0.1
1
10
1000
94 9106
∆VsRMS–AC Voltage on DC Supply Voltage (mV)
E –Threshold Irradiance( mW/m )
e min 2
f=f
0
10 kHz
100 Hz
1 kHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–30–150 153045607590
T
amb
– Ambient Temperature (°C )
96 12112
e min
E –Threshold Irradiance (mW/m )
2
Sensitivity in dark ambient
Figure 10. Max. Envelope Duty Cycle vs. Burstlength
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Directivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 102030405060708090
Tamb – Ambient Temperature ( °C )
16137
Envelope Duty Cycle
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ- Wavelength ( nm )
16919
S ( ) - Relative Spectral Sensitivityλ
rel
96 12223p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0q
30q
10q20q
40q
50q
60q
70q
80q
1.0
0.8
0.7
d
rel
– Relative Transmission Distance
TSOP341..LL1
Document Number 82199
Rev. 1.1, 31-Jan-05
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP341..LL1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is neccessary.
• For each burst which is longer than 1.8ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP341..LL1 it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP341..LL1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last (an example of the signal modulation is in the fig-
ure below).
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
0 5 10 15 20
Time ( ms )
16920
IR Signal
IR Signal from fluorescent
lamp with low modulation
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Document Number 82199
Rev. 1.1, 31-Jan-05
TSOP341..LL1
Vishay Semiconductors
Package Dimensions in mm
16845
TSOP341..LL1
Document Number 82199
Rev. 1.1, 31-Jan-05
Vishay Semiconductors
www.vishay.com
7
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1. Meet all present and future national and international statutory requirements.
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operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
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known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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damage, injury or death associated with such unintended or unauthorized use.
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Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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