Ultra-Large Area InGaAs p-i-n Photodiode 35PD10M The 35PD10M is the largest standard InGaAs detector available on the market. Both circular (10 mm diameter) and square (10 mm edge length) formats are offered. Standard packaging includes a hermetic TO-3 header and a ceramic flat pack. Custom packaging would also be available. Reliability is assured by planar, dielectric-passivated design. Applications include high sensitivity instrumentation and test equipment. Features Planar Structure Dielectric Passivation High Dynamic Impedance High Responsivity Device Characteristics: Parameters Dark Current Capacitance Responsivity Test Conditions -1.0V -1.0V 1300nm 1550nm Rise Time ( est. 50 ohm load ) Dynamic Impedance 0V Spectral Range Typical Performance Units 20 A 3 nF 0.9 A/W 1.0 A/W 1.0 s >60 K ohm 850 - 1650 nm Absolute Maximum Ratings Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 829 Flynn Road, Camarillo, CA 93012 1 Volt 200 mA 30 mA o -40 C to + 85oC -40oC to + 85oC 250oC tel(805)445-4500 fax(805)445-4502