Ultra-Large Area InGaAs p-i-n Photodiode
35PD10M
The 35PD10M is the largest standard InGaAs detector available on the market. Both circular
(10 mm diameter) and square (10 mm edge length) formats are offered. Standard packaging
includes a hermetic TO-3 header and a ceramic flat pack. Custom packaging would also be
available. Reliability is assured by planar, dielectric-passivated design. Applications include
high sensitivity instrumentation and test equipment.
Features
Planar Structure
Dielectric Passivation
High Dynamic Impedance
High Responsivity
Device Characteristics:
Parameters Test Conditions Typical Performance Units
Dark Current -1.0V 20 µA
Capacitance -1.0V 3 nF
Responsivity 1300nm 0.9 A/W
1550nm 1.0 A/W
Rise Time ( est. 50 ohm load ) 1.0 µs
Dynamic Impedance 0V >60 K ohm
Spectral Range 850 - 1650 nm
Absolute Maximum Ratings
Reverse Voltage 1 Volt
Forward Current 200 mA
Reverse Current 30 mA
Operating Temperature -40oC to + 85oC
Storage Temperature -40oC to + 85oC
Soldering Temperature 250oC
829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502
