2SA1242
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1242
Strobe Flash Applications
Medium Power Amplifier Applications
Excellent hFE linearity
: hFE (1) = 100 to 320 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 70 (min) (VCE = 2 V, IC = 4 A)
Low collector saturation voltage
: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 35 V
Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 8 V
DC IC 5
Collector current Pulsed
(Note 1) ICP 8
A
Base current IB 0.5 A
Ta = 25°C 1.0
Collector power
dissipation Tc = 25°C
PC
10
W
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit: mm
JEDEC
JEITA
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
2SA1242
2004-07-07
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 35 V, IE = 0 100 nA
Emitter cut-off current IEBO V
EB = 8 V, IC = 0 100 nA
Collector-emitter breakdown voltage VCEO I
C = 10 mA, IB = 0 20 V
Emitter-base breakdown voltage VEBO I
E = 1 mA, IC = 0 8 V
hFE (1)
(Note2) VCE = 2 V, IC = 0.5 A 100 320
DC current gain
hFE (2) V
CE = 2 V, IC = 4 A 70
Collector-emitter saturation voltage VCE (sat) I
C = 4 A, IB = 0.1 A 1.0 V
Base-emitter voltage VBE V
CE = 2 V, IC = 4 A 1.5 V
Transition frequency fT V
CE = 2 V, IC = 0.5 A 170 MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz 62 pF
Note 2: hFE (1) classification O: 100 to 200, Y: 160 to 320
Marking
A1242
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
2SA1242
2004-07-07
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Collector current IC (A)
Collector current IC (A)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFEIC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Base-emitter voltage VBE (V)
VBE – IC
Collector-emitter voltage VCE (V)
Safe Operating Area
10
0.01
Common emitter
IC/IB = 40
Tc = 100°C
0.05
0.03 0.1 0.3 1
0.1
0.3
0.5
1
3
25
25
3 10
0.03
Common emitter
VCE = 2 V
10
0.01
30
50
100
300
1000
0.03 0.1 0.3 1
Tc = 100°C
25
25
3
500
Common emitter
Tc = 2 5 ° C
0
0
8
2
IB = 10 mA
4
6
2 4 6 8 10
50
70
150
120
30
0
20
100
Common emitter
VCE = 2 V
0
0 0.4 0.8 1.2 1.6 2.0
8
6
4
2
Tc = 100°C
25
25
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
12
0
0
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
25 50 75 100 125 150 175
2
4
6
8
10 (1)
(2)
(3)
* : Single nonrepetitive pulse
Tc = 2 5 °C
** : Pulse width = 10 ms (max)
Duty cycle = 30 (max)
Curves must be derated linearly
with increase in temperature.
0.1
0.3
IC max (continuous)
IC max (pulsed)**
DC operation
Tc = 25°C
VCEO max
10 30 1 3
0.3
0.5
1
3
5
10 ms*
10
100 ms*
1 ms*
2SA1242
2004-07-07
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The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE