2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications * Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) : hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) * Low collector saturation voltage : VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1 A) * High power dissipation : PC = 10 W (Tc = 25C), PC = 1.0 W (Ta = 25C) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -8 V IC -5 DC Collector current Pulsed (Note 1) Base current Collector power dissipation Ta = 25C Tc = 25C Junction temperature Storage temperature range ICP -8 IB -0.5 PC 1.0 10 A A JEDEC JEITA TOSHIBA 2-7B1A Weight: 0.36 g (typ.) W Tj 150 C Tstg -55 to 150 C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) JEDEC JEITA TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2004-07-07 2SA1242 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -35 V, IE = 0 -100 nA Emitter cut-off current IEBO VEB = -8 V, IC = 0 -100 nA Collector-emitter breakdown voltage VCEO IC = -10 mA, IB = 0 -20 V Emitter-base breakdown voltage VEBO IE = -1 mA, IC = 0 -8 V DC current gain hFE (1) VCE = -2 V, IC = -0.5 A (Note2) 100 320 Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE = -2 V, IC = -4 A 70 VCE (sat) IC = -4 A, IB = -0.1 A -1.0 V VBE VCE = -2 V, IC = -4 A -1.5 V VCE = -2 V, IC = -0.5 A 170 MHz VCB = -10 V, IE = 0, f = 1 MHz 62 pF fT Collector output capacitance Note 2: hFE (1) classification hFE (2) Cob O: 100 to 200, Y: 160 to 320 Marking A1242 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1242 IC - VCE Common emitter -100 Tc = 25C -6 hFE -120 -150 DC current gain Collector current IC (A) hFE - IC 1000 -8 -70 -50 -4 -30 -20 500 Tc = 100C 300 25 -25 100 50 30 Common emitter VCE = -2 V IB = -10 mA 10 -0.01 -2 -0.03 -0.1 -0.3 -1 -10 -3 Collector current IC (A) 0 0 0 -2 -4 -6 -8 Collector-emitter voltage -10 VCE (V) VBE - IC -8 Common emitter IC/IB = 40 Common emitter VCE = -2 V IC (A) -1 -0.5 -0.3 Tc = 100C Collector current Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) - IC -3 25 -25 -0.1 -0.05 -0.03 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -6 -4 Tc = 100C 25 -25 -2 Collector current IC (A) 0 0 -0.4 -0.8 -1.2 Base-emitter voltage -1.6 VBE -2.0 (V) Safe Operating Area PC - Ta IC max (continuous) PC (W) -3 12 IC max (pulsed)** 1 ms* 10 ms* 100 ms* DC operation Tc = 25C Collector power dissipation (A) -5 Collector current IC -10 -1 -0.5 -0.3 * : Single nonrepetitive pulse Tc = 25C ** : Pulse width = 10 ms (max) Duty cycle = 30 (max) Curves must be derated linearly with increase in temperature. -0.1 -0.3 -1 VCEO max -3 Collector-emitter voltage -10 VCE 10 8 6 4 2 0 0 -30 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 x 50 x 0.8 mm (3) No heat sink (1) (2) (3) 25 50 75 100 Ambient temperature (V) 3 125 Ta 150 175 (C) 2004-07-07 2SA1242 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07