1
MRF1946 MRF1946AMOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 12.5 volt large–signal power amplifiers in commercial and
industrial equipment.
•High Common Emitter Power Gain
•Specified 12.5 V, 175 MHz Performance
Output Power = 30 Watts
Power Gain = 10 dB
Efficiency = 60%
•Diffused Emitter Resistor Ballasting
•Characterized to 220 MHz
•Load Mismatch at High Line and Overdrive Conditions
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 16 Vdc
Collector–Base Voltage VCBO 36 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC8.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD100
0.57 Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.75 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0) V(BR)CEO 16 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0) V(BR)CES 36 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C) ICES — — 5.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 40 75 150 —
(continued)
Order this document
by MRF1946/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 136–220 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–07, STYLE 1
MRF1946
CASE 145A–09, STYLE 1
MRF1946A
Motorola, Inc. 1994
REV 6
MRF1946 MRF1946A
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob — 75 100 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz) Gpe 10 11 — dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz) η60 70 — %
Load Mismatch
(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive,
Load VSWR = 30:1)
ψNo Degradation in Power Output
Figure 1. Broadband Test Circuit Schematic
C1 — 56 pF Mini–Unelco, 3HS0006–56
C2 — 47 pF Mini–Unelco, 3HS0006–47
C3, C4 — 180 pF Chip Cap, ATC 100B181JC500
C5 — 150 pF Unelco, J101–150
C6 — 39 pF Mini–Unelco, 3HS0006–39
C7, C8 — 1000 pF Chip Cap, ATC 100B102JC50
C9 — 0.1 µF Ceramic Capacitor
C10 — 10 µF, 25 V Electrolytic Capacitor
C11 — 56 pF Mini–Unelco, 3HS0006–56
L1 — 2 Turns #18 AWG, 0.125″ ID
L2, L3 — Circuit Board and Mounting Pad Inductance
L4 — 3 Turns #18 AWG, 0.125″ ID
L5 — 6 Turns #16 Enameled, 0.250″ ID
RFC1 — 0.15 µH Molded Choke w/Ferrite Bead
RFC2 — Ferrite Choke, Fair Rite VK200–4B
Board Material — 1/32, Glass Teflon, 1 oz. Cu Plating
Bead — Ferroxcube
RFC1
DUT
+12.5
Vdc
C1
C10
B
L1 L2
C2 C3 C4
RFC2L5
L3 L4
C6
C7
C5C11
C8 C9 +
3
MRF1946 MRF1946AMOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage
Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
60
Pin, INPUT POWER (WATTS)
0
48
36
24
12
01 2 3 4 5
50
230210190170150130 f, FREQUENCY (MHz)
40
30
20
10
0
50
40
30
20
10 5VCC, SUPPLY VOLTAGE (VOLTS)
6 7 8 9 10 11 12 13 14 15
50
40
30
20
10 5VCC, SUPPLY VOLTAGE (VOLTS)
6 7 8 9 10 11 12 13 14 15
50
40
30
20
10 5VCC, SUPPLY VOLTAGE (VOLTS)
6 7 8 9 10 11 12 13 14 15
50
40
30
20
10 5VCC, SUPPLY VOLTAGE (VOLTS)
6 7 8 9 10 11 12 13 14 15
VCC = 12.5 V
f = 136 MHz
150 MHz
175 MHz
220 MHz
3 W
2 W
1 W
VCC = 12.5 V
Pin = 4 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W 3 W
2 W
1 W
f = 220 MHz f = 175 MHz
f = 150 MHz f = 136 MHz
MRF1946 MRF1946A
4MOTOROLA RF DEVICE DATA
Figure 8. Typical Performance in a Broadband Circuit
Gpe, POWER GAIN (dB)
170
f, FREQUENCY (MHz)
155 160 165 175
100
12
80
60
20
c
η
, COLLECTOR EFFICIENCY
Gpe
η
c
INPUT VSWR
Pin = 3 W
VCC = 12.5 V
150
40
10
8
6
4
2.0:1
1.5:1
1.1:1
Figure 9. Series Equivalent Input and
Output Impedance
Zin
f = 136 MHz 220
150
ZOL*
f = 136 MHz
175
175
220
150
Zo = 10
Ω
f
MHz Zin
Ohms ZOL*
Ohms
136
150
175
220
0.60 – j0.48
0.63 – j0.26
0.62 + j0.13
0.73 + j0.57
2.22 – j0.74
2.30 – j0.40
2.35 – j0.04
2.20 + j0.43
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
VCC = 12.5 Vdc, Pout = 30 W
5
MRF1946 MRF1946AMOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 211–07
ISSUE N
MRF1946
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
UM
M
Q
RB
1
4
32
D
K
E
SEATING
PLANE
C
J
H
S
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.960 0.990 24.39 25.14
B0.370 0.390 9.40 9.90
C0.229 0.281 5.82 7.13
D0.215 0.235 5.47 5.96
E0.085 0.105 2.16 2.66
H0.150 0.108 3.81 4.57
J0.004 0.006 0.11 0.15
K0.395 0.405 10.04 10.28
M40 50 40 50
Q0.113 0.130 2.88 3.30
R0.245 0.255 6.23 6.47
S0.790 0.810 20.07 20.57
U0.720 0.730 18.29 18.54
_ _ _ _
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
CASE 145A–09
ISSUE M
MRF1946A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.370 0.385 9.40 9.78
B0.320 0.330 8.13 8.38
C0.670 0.790 17.02 20.07
D0.215 0.235 5.46 5.97
E0.070 ––– 1.78 –––
J0.003 0.007 0.08 0.18
K0.490 ––– 12.45 –––
L0.055 0.070 1.40 1.78
M45 NOM 45 NOM
P––– 0.050 ––– 1.27
R0.299 0.307 7.59 7.80
S0.158 0.178 4.01 4.52
T0.083 0.100 2.11 2.54
U0.098 0.132 2.49 3.35
_ _
SEATING
PLANE
S
J
U
K
D
L
A
R
M
3
1
42
B
EP
T
8–32UNC–2A
WRENCH FLAT
C
MRF1946 MRF1946A
6MOTOROLA RF DEVICE DATA
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MRF1946/D
*MRF1946/D*
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