NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features * * * * * * Low ON Resistance Low Gate Charge ESD Diode-Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A 650 V 0.75 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol NDF Unit VDSS 600 V Continuous Drain Current, RqJC (Note 1) ID 10 A Continuous Drain Current TA = 100C, RqJC (Note 1) ID 6.0 A Pulsed Drain Current, tP = 10 ms IDM 40 A Power Dissipation, RqJC PD 39 W Gate-to-Source Voltage VGS 30 V Single Pulse Avalanche Energy (L = 6.0 mH, ID = 10 A) EAS 300 mJ ESD (HBM) (JESD22-A114) Vesd 3900 V RMS Isolation Voltage (t = 0.3 sec., R.H. 30%, TA = 25C) (Figure 13) VISO 4500 V Peak Diode Recovery (Note 2) Rating Drain-to-Source Voltage dv/dt 4.5 V/ns Continuous Source Current (Body Diode) IS 10 A Maximum Temperature for Soldering Leads TL 260 C Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature. 2. IS 10 A, di/dt 200 A/ms, VDD = 80% BVDSS (c) Semiconductor Components Industries, LLC, 2012 February, 2012 - Rev. 10 1 N-Channel D (2) G (1) S (3) 1 2 3 NDF10N60ZG TO-220FP CASE 221D 1 2 3 NDF10N60ZH TO-220FP CASE 221AH ORDERING AND MARKING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: NDF10N60Z/D NDF10N60Z THERMAL RESISTANCE Symbol NDF10N60Z Unit Junction-to-Case (Drain) Parameter RqJC 3.2 C/W Junction-to-Ambient Steady State (Note 3) RqJA 50 3. Insertion mounted ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Test Conditions Symbol Min VGS = 0 V, ID = 1 mA BVDSS 600 Reference to 25C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-to-Source Leakage Current V 0.6 V/C IDSS 1 VGS = 20 V IGSS 10 mA Static Drain-to-Source On-Resistance VGS = 10 V, ID = 5.0 A RDS(on) 0.65 0.75 W Gate Threshold Voltage VDS = VGS, ID = 100 mA VGS(th) 3.9 4.5 V VDS = 15 V, ID = 10 A gFS VDS = 600 V, VGS = 0 V Gate-to-Source Forward Leakage 25C 150C mA 50 ON CHARACTERISTICS (Note 4) Forward Transconductance 3.0 7.9 S DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) Ciss 1097 1373 1645 Coss 118 150 178 Reverse Transfer Capacitance (Note 5) Crss 20 35 50 Total Gate Charge (Note 5) Qg 23 47 68 Qgs 5.0 9.0 14 Qgd 12 26 36 Output Capacitance (Note 5) Gate-to-Source Charge (Note 5) Gate-to-Drain ("Miller") Charge (Note 5) VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 300 V, ID = 10 A, VGS = 10 V Plateau Voltage VGP Gate Resistance Rg 6.4 0.5 1.5 pF nC V 4.5 W RESISTIVE SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 300 V, ID = 10 A, VGS = 10 V, RG = 5 Fall Time td(on) 15 tr 31 td(off) 40 tf 23 ns SOURCE-DRAIN DIODE CHARACTERISTICS (TC = 25C unless otherwise noted) Diode Forward Voltage IS = 10 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 10 A, di/dt = 100 A/ms trr 395 ns Qrr 3.0 mC Reverse Recovery Charge 4. Pulse Width 380 ms, Duty Cycle 2%. 5. Guaranteed by design. http://onsemi.com 2 1.6 V NDF10N60Z TYPICAL CHARACTERISTICS 20 7.0 V 14 6.4 V 12 6.2 V 10 6.0 V 8 5.8 V 6 5.6 V 5.4 V 4 4 8 12 16 20 24 14 12 10 8 TJ = 150C 6 4 TJ = -55C 2 5 6 7 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.75 0.70 ID = 5 A 0.65 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 8 0.80 TJ = 25C VGS = 10 V 0.75 0.70 0.65 0.60 2.5 5.0 7.5 10 12.5 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 10,000 2.7 VGS = 0 V VGS = 10 V ID = 5 A IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 4 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 25C 2.2 3 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.80 0.60 TJ = 25C 16 2 0 5.0 V 0 VDS = 30 V 18 6.6 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 10 V 16 2 0 20 VGS = 15 V TJ = 25C ID, DRAIN CURRENT (A) 18 TJ = 150C 1000 1.7 1.2 100 TJ = 100C 0.7 0.2 -50 -25 0 25 50 75 100 125 150 10 0 100 200 300 400 500 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 600 NDF10N60Z TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (V) VGS = 0 V TJ = 25C f = 1 MHz 3000 2500 2000 Ciss 1500 1000 Crss 500 0 Coss 0 25 50 75 100 125 150 175 20 400 ID = 10 A TJ = 25C 15 300 VDS QT 10 200 Qgs Qgd 0 0 5 10 IS, SOURCE CURRENT (A) tr tf td(on) 10 25 30 35 40 45 50 0 55 8 6 4 2 0 100 VGS = 0 V TJ = 25C 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Source Current vs. Forward Voltage 100 ID, DRAIN CURRENT (A) t, TIME (ns) 10 VDD = 300 V ID = 10 A VGS = 10 V 1 20 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge td(off) 10 15 100 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 VGS 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 200 10 100 ms 10 ms VGS 30 V Single Pulse TC = 25C 1 ms 10 ms dc 1 0.1 0.01 0.1 RDS(on) Limit Thermal Limit Package Limit 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 3500 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area for NDF10N60Z http://onsemi.com 4 1000 1.0 NDF10N60Z TYPICAL CHARACTERISTICS 10 R(t) (C/W) Duty Cycle = 50% 1 20% 10% 5% 0.1 2% 1% 0.01 RqJC = 3.2C/W Steady State Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 PULSE TIME (sec) Figure 12. Thermal Impedance for NDF10N60Z LEADS HEATSINK 0.110 MIN Figure 13. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 100 1000 NDF10N60Z ORDERING INFORMATION Package Shipping NDF10N60ZG TO-220FP (Pb-Free, Halogen-Free) 50 Units / Rail NDF10N60ZH TO-220FP (Pb-Free, Halogen-Free) 50 Units / Rail Order Number For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS NDF10N60ZG or NDF10N60ZH AYWW Gate Source Drain TO-220FP A Y WW G, H = Location Code = Year = Work Week = Pb-Free, Halogen-Free Package http://onsemi.com 6 NDF10N60Z PACKAGE DIMENSIONS TO-220 FULLPAK CASE 221D-03 ISSUE K -T- -B- F SEATING PLANE C S Q U A 1 2 3 H -Y- K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE Y http://onsemi.com 7 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 NDF10N60Z PACKAGE DIMENSIONS TO-220 FULLPACK, 3-LEAD CASE 221AH ISSUE B A E B P E/2 0.14 M B A M SEATING PLANE A H1 A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.70 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.70 7.10 12.70 14.73 --2.80 3.00 3.40 2.80 3.20 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NDF10N60Z/D