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2N7002KTB6
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-563 Pa ckage
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 27
60V N-Channel Enhancement Mode MOSFET - ESD Protected
M aximum RATINGS a nd Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
P AN JIT RESER VES THE RIGHT T O IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
+20 V
Continuous Drain Current I
D
115 mA
Pulsed Drain Current
1)
I
DM
800 mA
Maximum Power Dissipation T
A
=25
O
C
T
A
=75
O
CP
D
200
150 mW
Operating Junction and Storage Temperature
Range T
J
,T
STG
-55 to + 150
O
C
Juncti on-to Ambient Thermal Resistance(PCB mounted)
2
R
θJA
883
O
C/W
SOT-563