1MBH08D-120 Molded IGBT
1200V / 8A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Equivalent Circuit Schematic
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector DC Tc=25°C IC25
current Tc=105°C IC105
1ms Tc=25°C Icp
Max. power dissipation (IGBT) PC
Max. power dissipation (FWD) PC
Operating temperature Tj
Storage temperature Tstg
Screw torque -
Rating
1200
±20
15
8
39
135
85
+150
-40 to +150
70
Unit
V
V
A
A
A
W
W
°C
°C
N·m
C:Collector
E:Emitter
G:Gate
IGBT +
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Switching
Time Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
ton
tr
toff
tf
VF
trr
– – 1.0
––20
5.5 – 8.5
– – 3.5
– 1000 –
– 160 –
–60–
– – 1.2
– – 0.6
– – 1.5
– – 0.5
– 0.16 –
– 0.11 –
– 0.30 –
– – 0.50
– – 3.0
– – 0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=8mA
VGE=15V, IC=8A
VGE=0V
VCE=10V
f=1MHz
VCC=600V, IC=8A
VGE=±15V
RG=200 ohm
(Half Bridge)
VCC=600V, IC=8A
VGE=+15V
RG=20 ohm
(Half Bridge)
IF=8A
IF=8A, VGE=-10V,
VR=200V, di/dt=100A/μs
mA
μA
V
V
pF
μs
μs
V
μs
Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance characteristics
Thermal resistance – – 0.92
– – 1.47
IGBT
FWD
°C/W
°C/W
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Outline drawings, mm
FWD
TO-3PL
Characteristics
1MBH08D-120 Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector-Emitter voltage : VCE (V)
Collector current : IC (A)
Collector current : IC (A)
Collector-Emitter voltage : VCE (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=125°C
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage : VCE (V)
Gate-Emitter voltage : VGE (V) Gate-Emitter voltage : VGE (V)
Switching time vs. Collector current
VCC=600V, RG=20Ω, VGE=±15V, Tj=25°C
Switching time vs. Collector current
VCC=600V, RG=20Ω, VGE=±15V, Tj=125°C
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Collector current : IC (A) Collector current : IC (A)
IGBT Module
Characteristics
1MBH08D-120
Gate resistance : RG (Ω)
Switching time vs. RG
VCC=600V, IC=8A, VGE=±15V, Tj=25°C
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Gate resistance : RG (Ω)
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Switching time vs. RG
VCC=600V, IC=8A, VGE=±15V, Tj=125°C
Dynamic input characteristics
Tj=25°C
Collector-Emitter voltage : VCE (V)
Gate charge : Qg (nc)
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Capacitance : Cies, Coes, Cres (nF)
Collector-Emitter voltage : VCE (V)
Collector current : IC (A)
Collector-Emitter voltage : VCE (V) Gate voltage : VGE (V)
Short circuit current : ISC (A)
Gate-Emitter voltage : VGE (V)
Reverse Biased Safe Operating Area
+VGE=15V, -VGE 15V, Tj 125°C, RG 20Ω
=
<=
<=
>
Typical short circuit capability
VCC=800V, RG=20Ω, Tj=125°C,
Short circuit time : tSC (μs)
IGBT Module
Characteristics
1MBH08D-120
Reverse recovery time vs. Forward current
VR=200V, -di/dt=100A/μsec
Reverse recovery time : trr [nsec]
Forward current : IF (A) Forward current : IF (A)
Reverse recovery current : Irr [A]
Forward Voltage vs. Forward current
Forward current : IF [A]
Forward voltage : VF (V)
Reverse recovery chracteristics vs. -di/dt
IF=8A, Tj=125°C
Reverse recovery time : trr [nsec]
-di/dt [A/μsec]
Reverse recovery current : Irr [A]
Transient thermal resistance
Reverse recovery current vs. Forward current
VR=200V, -di/dt=100A/μsec
Thermal resistance : Rth(j-c) [°C/W]
Pulse width : PW (sec)
