BT137S-600D - NXP Semiconductors - Datasheet.Directory

1. Product profile

1.1 General description

Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK)

surface-mountable plastic package intended for use in general purpose bidirectional

switching and phase control applications, where high sensitivity is required in all four

quadrants. This very sensitive gate "series D" triac is intend ed to be interfaced directly to

microcontrollers, logic integrated circuits and other low power gate trigger circuits.

1.2 Features and benefits

Direct triggering from low power

drivers and logic ICs

High blocking voltage capability

Low holding current for low current

loads and lowest EMI at commutation

Planar passivated for voltage

ruggedness and reliability

Surface-mountable package

Triggering in all four quadrants

Very sensitive gate

1.3 Applications

General purpose motor control General purpose switching

1.4 Quick reference data

BT137S-600D

4Q Triac

Rev. 03 — 28 March 2011 Product data sheet

DPAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak

off-state voltage --600V

ITSM non-repetitive peak

on-state current full sine wave; Tj(init) =25°C;

tp= 20 ms; see Figure 4;

see Figure 5

--65A

IT(RMS) RMS on-state current full sine wave; Tmb 102 °C;

see Figure 1; see Figure 2;

see Figure 3

--8A

Product data sheet Rev. 03 — 28 March 2011 2 of 14

NXP Semiconductors BT137S-600D

4Q Triac

2. Pinning information

3. Ordering information

Static characteristics

IGT gate trigger current VD=12V; I

T= 0.1 A; T2+ G+;

Tj=25°C -2.55mA

VD=12V; I

T= 0.1 A; T2+ G-;

Tj=25°C; see Figure 7 -3.55mA

VD=12V; I

T= 0.1 A; T2- G-;

Tj=25°C; see Figure 7 -3.55mA

VD=12V; I

T= 0.1 A; T2- G+;

Tj=25°C; see Figure 7 -6.510mA

IHholding current VD=12V; T

j=25°C;

see Figure 9 -1.510mA

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

SOT428 (DPAK)

2 T2 main terminal 2

3 G gate

mb T2 mounti n g ba se ; main terminal 2

ym051

Table 3. Ordering information

Type number Package

Name Description Version

BT137S-600D DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped) SOT428

Product data sheet Rev. 03 — 28 March 2011 3 of 14

NXP Semiconductors BT137S-600D

4Q Triac

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 600 V

IT(RMS) RMS on-state current full sine wave; Tmb 102 °C;

see Figure 1; see Figure 2; see Figure 3 -8A

ITSM non-repetitive peak on-state current full sine wave; Tj(init) =25°C;

tp=20ms; see Figure 4; see Figure 5 -65A

full sine wave; Tj(init) =25°C;

tp=16.7ms -71A

I2t I

2t for fusing tp= 10 ms; sine-wave pulse - 21 A2s

dIT/dt rate of rise of on-state current IT=12A; I

G= 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G+ -50A/µs

IT=12A; I

G= 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G- -50A/µs

IT=12A; I

G= 0.2 A; dIG/dt = 0.2 A/µs;

T2- G- -50A/µs

IT=12A; I

G= 0.2 A; dIG/dt = 0.2 A/µs;

T2- G+ -10A/µs

IGM peak gate current - 2 A

VGM peak gate voltage - 5 V

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

f = 50 Hz

Tmb  102 °C

Fig 1. RMS on-state current as a function of mounting

base temperature; maximum values Fig 2. RMS on-state current as a function of surge

duration; maximum values

Tmb (°C)

−50 150100050

003aae689

IT(RMS)

(A)

003aae692

10−210−1 1 10

surge duration (s)

IT(RMS)

(A)

Product data sheet Rev. 03 — 28 March 2011 4 of 14

NXP Semiconductors BT137S-600D

4Q Triac

Fig 3. Total power dissipation as a function of RMS on-state current; maximum values

tp  20 ms

(1) dIT/dt limit

(2) T2- G+ quadrant limit

Fig 4. No n-repetitive peak on-state current as a function of pulse width; maximum values

003aae690

Ptot

(W)

IT(RMS) (A)

0 108462

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

= 180°

120°

90°

60°

30°

003aae691

102

103

10−510−410−310−210−1

TSM

j(init)

= 25 °C max

(1)

(2)

tp (s)

ITSM

(A)

Product data sheet Rev. 03 — 28 March 2011 5 of 14

NXP Semiconductors BT137S-600D

4Q Triac

f = 50 Hz

Fig 5. No n-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

003aae693

ITSM

(A)

number of cycles

1 104

103

10 102

TSM

j(init)

= 25 °C max

1/f

Product data sheet Rev. 03 — 28 March 2011 6 of 14

NXP Semiconductors BT137S-600D

4Q Triac

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from

junction to mounting base half cycle; see Figure 6 --2.4K/W

full cycle; see Figure 6 --2K/W

Rth(j-a) thermal resistance from

junction to ambient PCB (FR4) mounted; minimum pad sizes - 75 - K/W

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width

003aae698

tp (s)

10-5 11010-1

10-2

10-4 10-3

10-1

Zth(j-mb)

(K/W)

10-2

bidirectional

unidirectional

Product data sheet Rev. 03 — 28 March 2011 7 of 14

NXP Semiconductors BT137S-600D

4Q Triac

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD=12V; I

T= 0.1 A; T2+ G+; Tj=25°C - 2.5 5 mA

VD=12V; I

T= 0.1 A; T2+ G-; Tj=25°C;

see Figure 7 -3.55mA

VD=12V; I

T= 0.1 A; T2- G-; Tj=25°C;

see Figure 7 -3.55mA

VD=12V; I

T= 0.1 A; T2- G+; Tj=25°C;

see Figure 7 -6.510mA

ILlatching current VD=12V; I

G= 0.1 A; T2+ G+; Tj=25°C;

see Figure 8 -1.615mA

VD=12V; I

G= 0.1 A; T2+ G-; Tj=25°C;

see Figure 8 -8.520mA

VD=12V; I

G= 0.1 A; T2- G-; Tj=25°C;

see Figure 8 -1.215mA

VD=12V; I

G= 0.1 A; T2- G+; Tj=25°C;

see Figure 8 -2.520mA

IHholding current VD=12V; T

j= 25 °C; see Figure 9 -1.510mA

VTon-stat e vo ltage IT=10A; T

j= 25 °C; see Figure 10 - 1.3 1.65 V

VGT gate trigger voltage VD=12V; I

T=0.1A; T

j=25°C;

see Figure 11 -0.71.5V

VD=400V; I

T= 0.1 A; Tj= 125 °C;

see Figure 11 0.25 0.4 - V

IDoff-state current VD=600V; T

j= 125 °C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage VDM = 402 V; Tj=125°C; R

GT1 =1k;

exponential waveform; gate open circuit -5-V/µs

tgt gate-controlled turn-on

time ITM =12A; V

D=600V; I

G=0.1mA;

dIG/dt = 5 A/µs -2-µs

Product data sheet Rev. 03 — 28 March 2011 8 of 14

NXP Semiconductors BT137S-600D

4Q Triac

(1) T2- G+

(2) T2- G-

(3) T2+ G-

(4) T2+ G+

Fig 7. Normalized gate trigger current as a function of

junction temperature Fig 8. Normalized latching current as a function of

junction temperature

Vo = 1.264 V

Rs = 0.038 

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig 9. Normalized holding current as a function of

junction temperature Fig 10. On-state current as a function of on-state

voltage

Tj (°C)

−60 14090−10 40

003aae809

(1)

(2)

(3)

(4)

(1)

(2)

(3)

(4)

IGT

IGT (25 °C)

Tj (°C)

−60 14090−10 40

003aae697

IL(25°C)

Tj (°C)

−60 14090−10 40

003aae699

1.0

0.5

1.5

2.0

IH(25°C)

VT (V)

0321

003aae696

(A)

(1) (2) (3)

Product data sheet Rev. 03 — 28 March 2011 9 of 14

NXP Semiconductors BT137S-600D

4Q Triac

Fig 11. Normalized gate trigger voltage as a function of junction temperature

Tj (°C)

−60 14090−10 40

003aae694

0.8

0.4

1.2

1.6

VGT (25°C)

VGT

Product data sheet Rev. 03 — 28 March 2011 10 of 14

NXP Semiconductors BT137S-600D

4Q Triac

7. Package outline

Fig 12. Package outline SOT428 (DPAK)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT428 SC-63

TO-252

SOT42

06-02-14

06-03-16

DIMENSIONS (mm are the original dimensions)

lastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)

mounting

base

b1c

0 5 10 mm

scale

UNIT

mm 0.93

0.46

5.46

5.00

0.56

0.20

6.22

5.98

6.73

6.47

10.4

9.6

2.95

2.55

2.38

2.22

1.1

0.9

b1e1

0.89

0.71

bcD

0.9

0.5

2.285 4.57

4.0

min

4.45

min

0.5

min

HDLw

0.2

max

0.2

Product data sheet Rev. 03 — 28 March 2011 11 of 14

NXP Semiconductors BT137S-600D

4Q Triac

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BT137S-600D v.3 20110328 Product data sheet - BT137S-600D v.2

Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

BT137S-600D v.2 20010601 Product specification - BT137S-600D v.1

Product data sheet Rev. 03 — 28 March 2011 12 of 14

NXP Semiconductors BT137S-600D

4Q Triac

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) des cribed in this document may have changed si nce this docu ment was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full dat a sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsisten cy or conf lict with the short dat a sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

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consequences of use of such information.

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Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconduct ors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

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authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expect ed

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

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design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liabil i ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessa ry

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress rating s only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contai ns data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 03 — 28 March 2011 13 of 14

NXP Semiconductors BT137S-600D

4Q Triac

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

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in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

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In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

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liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

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9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFAR E Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BT137S-600D

4Q Triac

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 28 March 2011

Document identifier: BT137S-600D

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .6

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .1 3