AP2318AGEN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V Gate Drive D Small Outline Package Surface Mount Device S RoHS Compliant & Halogen-Free SOT-23 BVDSS 30V RDS(ON) 1.5 ID 540mA G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G S The SOT-23 package is widely used for commercial-industrial surface mount applications. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 30 V +16 V 3 540 mA 3 430 mA 2 A 0.7 W Continuous Drain Current , VGS @ 4V Continuous Drain Current , VGS @ 4V 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 180 /W 1 201105121 AP2318AGEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4V, ID=500mA - - 1.5 VGS=2.5V, ID=200mA - - 2.5 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance VDS=4V, ID=500mA - 500 - mS IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+16V, VDS=0V - - +60 uA Qg Total Gate Charge ID=0.5A - 1 1.6 nC Qgs Gate-Source Charge VDS=15V - 0.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.3 - nC td(on) Turn-on Delay Time VDS=15V - 16 - ns tr Rise Time ID=0.5A - 55 - ns td(off) Turn-off Delay Time RG=3.3 - 50 - ns tf Fall Time VGS=5V - 90 - ns Ciss Input Capacitance VGS=0V - 23 37 pF Coss Output Capacitance VDS=15V - 15 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Min. Typ. - - Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=500mA, VGS=0V Max. Units 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 400/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2318AGEN-HF 2.5 1.6 o T A = 25 C ID , Drain Current (A) ID , Drain Current (A) 2.0 1.5 1.0 2.5V V G =2.0V 0.5 1.2 0.8 2.5V 0.4 0.0 V G =2.0V 0.0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3300 2.0 I D =200mA I D =500mA V G =4V Normalized RDS(ON) T A =25 o C RDS(ON) (m) 5.0V 4.5V 4.0V o TA=150 C 5.0V 4.5V 4.0V 2300 1.6 1.2 1300 0.8 0.4 300 1 2 3 4 5 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 2.0 I D =250uA 1.6 Normalized VGS(th) (V) IS(A) 1.6 1.2 T j =150 o C T j =25 o C 0.8 0.4 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2318AGEN-HF f=1.0MHz 6 40 5 30 4 C (pF) VGS , Gate to Source Voltage (V) I D =0.5A V DS =15V 3 C iss 20 2 C oss C rss 10 1 0 0 0 0.4 0.8 1.2 1 1.6 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 10 Operation in this area limited by RDS(ON) ID (A) 1 1ms 10ms 100ms 0.1 o T A =25 C Single Pulse 1s Duty factor=0.5 0.2 0.1 0.1 PDM t 0.05 T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.01 Rthja = 400/W Single Pulse DC 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 1.6 V DS =5V VG o ID , Drain Current (A) T j = -40 C o T j =25 C 1.2 QG T j =150 o C 4.5V QGS 0.8 QGD 0.4 Charge Q 0.0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4