JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M MOSFET( N-Channel ) D WBFBP-03B (1.2x1.2x0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching G performance. They can be used in most applications requiring up to 400mA DC D and can deliver pulsed currents up to 2A. These products are particularly suited 1. GATE for low voltage, low current applications such as small servo motor control, power 2. SOURCE MOSFET gate drivers, and other switching applications. S BACK 3. DRAIN S G FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. APPLICATION N-Channel Enhancement Mode Field Effect Transistor For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 72 D 72 G S MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units 60 V VDS Drain-Source voltage ID Drain Current 115 mA PD Power Dissipation 150 mW RJA Thermal Resistance. Junction to Ambient Air 625 /W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS(Ta=25 Parameter Symbol unless Test otherwise conditions specified) MIN VGS=0V,ID=10A 60 VGS=0V,ID=3mA 60 1 Drain-Source Breakdown Voltage V(BR)DSS Gate-Threshold Voltage* Vth(GS) VDS=VGS, ID=250A Gate-body Leakage lGSS VDS=0V, VGS=25V Zero Gate Voltage Drain Current IDSS On-state Drain Current* ID(ON) TYP MAX V 2.5 100 VDS=60V, VGS=0V 1 500 VDS=60V,VGS=0V,Tj=125 VGS=10V, VDS=7V 500 1.2 7.5 VGS=5V, ID=50mA 1.7 7.5 RDS(0n) Drain-Source On- Voltage * VDS(0n) Forward Tran conductance* gts VDS=10V, ID=200mA Diode Forward Voltage VSD IS=115mA, VGS=0V Input Capacitance Ciss Output Capacitance COSS Reverse Transfer Capacitance CrSS nA A mA VGS=10V, ID=500mA Drain-Source On-Resistance* UNIT VGS=10V, ID=500mA 3.75 VGS=5V, ID=50mA 0.375 80 V ms 1.2 V 50 VDS=25V, VGS=0V,f=1MHz 25 pF 5 * Pulse test , pulse width300s, duty cycle2% . SWITCHING TIME Turn-on Time td(0n) Turn-off Time td(off) VDD=25V,RG=25 ID=500mA,VGEN=10V RL=50 20 40 ns Typical Characteristics 2N7002M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .1 7 0 0 .2 7 0 0 .2 7 0 0 .3 7 0 0 .2 5 0 R E F . 1 .1 5 0 1 .2 5 0 1 .1 5 0 1 .2 5 0 0 .4 7 0 R E F . 0 .8 1 0 R E F . 0 .8 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 5 0 R E F . 0 .3 0 0 R E F . 0 .0 9 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 7 0 .0 1 1 0 .0 1 1 0 .0 1 5 0 .0 1 0 R E F . 0 .0 4 5 0 .0 4 9 0 .0 4 5 0 .0 4 9 0 .0 0 2 R E F . 0 .0 3 2 R E F . 0 .0 3 2 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 6 R E F . 0 .0 1 2 R E F . 0 .0 0 4 R E F .