D
TOP
G S
D
BACK
S G
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate MOSFET
2N7002M MOSFET( N-Channel )
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 72
D
72
G S
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VDS Drain-Source voltage 60 V
ID Drain Current 115 mA
PD Power Dissipation 150 mW
RθJA Thermal Resistance. Junction to Ambient Air 625 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. GATE
2. SOURCE
3. DRAIN
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
VGS=0V,ID=10µA 60
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=3mA 60
Gate-Threshold Voltage* Vth(GS) V
DS=VGS, ID=250µA 1 2.5
V
Gate-body Leakage lGSS V
DS=0V, VGS=±25V ±100 nA
VDS=60V, VGS=0V 1
Zero Gate Voltage Drain Current IDSS
VDS=60V,VGS=0V,Tj=125℃ 500
µA
On-state Drain Current* ID(ON) V
GS=10V, VDS=7V 500 mA
VGS=10V, ID=500mA 1.2 7.5
Drain-Source On-Resistance* RDS(0n) VGS=5V, ID=50mA 1.7 7.5
Ω
VGS=10V, ID=500mA 3.75
Drain-Source On- Voltage * VDS(0n) VGS=5V, ID=50mA 0.375
V
Forward Tran conductance* gts V
DS=10V, ID=200mA 80 ms
Diode Forward Voltage VSD I
S=115mA, VGS=0V 1.2 V
Input Capacitance Ciss 50
Output Capacitance COSS 25
Reverse Transfer Capacitance CrSS
VDS=25V, VGS=0V,f=1MHz
5
pF
* Pulse test , pulse width≤300µs, duty cycle≤2% .
SWITCHING TIME
Turn-on Time td(0n) 20
Turn-off Time td(off)
VDD=25V,RG=25Ω
ID=500mA,VGEN=10V
RL=50Ω 40
ns
Typical Characteristics 2N7002M
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.170 0.270 0.007 0.011
b1 0.270 0.370 0.011 0.015
b2
D 1.150 1.250 0.045 0.049
E 1.150 1.250 0.045 0.049
D2
E2
e
L
L1
L2
k
z 0.090 REF. 0.004 RE F.
0.230 REF.
0.150 REF. 0.009 RE F.
0.010 REF.
0.300 REF. 0.012 RE F.
0.280 REF. 0.011 RE F.
0.006 RE F.
Symbol Dimensions In Millimeters D imensions In Inches
0.800 TYP . 0.032 TYP .
0.470 REF.
0.810 REF. 0.002 RE F.
0.032 RE F.
0.250 REF.
