SbE D MM 7929237 OO4154S 42T MASGTH { SGS-THOMSON Tll-/5 IF icRoELECTROMICS 1N4765,A>1N4774,A S$ G S-THOMSON TEMPERATURE COMPENSATED ZENER DIODES > a SEMICONDUCTOR MATERIAL : SILICON wo m TECHNOLOGY : LOCAL EPITAXY + GUARD 7 RING a a DO 35 (Glass) ABSOLUTE RATINGS (limiting values} Symbol Parameter Value Unit Prot Power Dissipation* Tambp = 50C 0.4 Ww Tstg Storage and Junction Temperature Range 65 to 175 C T, 65 to 175 C TL Maximum Lead Temperature for Soldering during 10s at 4mm 230 C from Case THERMAL RESISTANCE Symbol Parameter Value Unit Rihy-ay_ | Junction-ambient* 300 CiW ELECTRICAL CHARACTERISTICS (T.,) = 25C unless otherwise specified) Types Var Rzt @ tzt Test Temperatures AV2z** avz typ. max. max. (VY) (2) (mA) (C) (mV) (1078/C) 1N 4765 9.1 350 05 0 +25 +75 68 100 1N 4766 91 350 0.5 0 +25 +75 34 50 1N 4767 91 350 05 0 +25 +75 14 20 1N 4768 91 350 Qs 0 +25 +75 7 10 1N 4769 9.4 350 0.5 0 +25 +75 3 5 IN 4765 A 9.1 350 05 | -55 0 +25 +75 +100 144 100 1N 4766 A 9.1 350 0.5 | ~55 0 +25 +765 +100 70 50 IN4767A 9.1 350 05 | 55 0 +25 +75 +100 28 20 1N4768A 91 350 0.5 | 55 0 +25 +75 +100 14 10 1IN4769A 91 350 05 | -55 i) +25 +75 +100 7 5 * On infinite heatsink with d = 4mm ** The voltage reference diodes are characterized by the box method The maximum allowable voltage change AVz Is guaranteed any two temperature within the range Tests are performed at the indicated temperatures and the specified current duly 1989 13 61 SbE D MM 7929237? OO41L546 766 MSGTH 1N 4765, A -> 1N 4774, A SG S-THOMSON ELECTRICAL CHARACTERISTICS (T,,,,) = 25C unless otherwise specified) (continued) Types Vzt Rzt @ lat Test Temperatures AV2* avz typ. max. max. (V) (Q) (mA) (C) (mV) (1078 /C) 1N 4770 91 350 05 0 +25 +75 68 100 1N 4771 91 350 05 0 + 25 +75 34 50 1N 4772 91 350 05 0 + 25 +75 14 20 1N 4773 91 350 05 0 + 25 +75 7 10 1N 4774 91 350 0.5 0 + 25 +75 3 5 IN4770A 91 350 0.5) -55 0 +25 +75 +100 141 100 IN4771 A 9.1 350 0.5 | -55 0 + 25 +75 +100 70 50 IN 4772 A 91 350 05 | -55 0 + 25 +75 +100 28 20 IN4773 A 91 350 05 | -55 0 + 25 +75 +100 14 10 IN 47744 91 350 0.5 | - 55 0 +25 +75 +100 7 5 * The voltage reference diodes are characterized by the box method The maximum allowable voltage change AVz Is guaranteed any two- temperature within the range Tests are performed at the indicated temperatures and the specified current PACKAGE MECHANICAL DATA DO 35 Glass 127 min 305 12.7 min 2 1,53 _ a ~ 4,50 2,00 | 4-4 -@)- 7 20,458 2 0,458 0,558 0 558 Cooling method by convection and conduction. Marking clear, ring at cathode end. Weight 015g 28 ia SGS-THOMSON Y, MICROELECTRONICS 62 SbE D MM 7929237 004154? bTe BESGTH S G S-THOMSON P{W) 0.5 0.4 0.3 0.2 Tamp (C) 0.0 25 50 75 1N 4765, A> 1N 4774, A 100 126 150 175 Fig.41 - Power dissipation versus ambient temperature. +AVz (mv) iN 4765 Tambp (C) 0 25 50 75 Fig.2a - Regulation voltage variatian versus ambient temperature. + AVz (mv) 70 Izt = 1 mA 50 50 tN 40 iN 30 20 10 Tamp (C) 0 25 50 75 Fig.2c - Aegulatian voltage variation versus ambient temperature. +AVz (my) Iz7 = .5 mA iN 4765 iN 4758 A iN 4787 A 4768 Tamb (C) -60 -40 -20 0 20 40 60 BO 100 Fig.2b - Aegutation voltage variation versus ambient temperature. + AV (mV) 0 Iz7T = i mA i tA iN 4772 A 4N 4773 A tN 4774 A Tamp (C) -60 -40 -20 0 20 40 60 80 100 Fig.@d - Regulation voltage variation versus ambient temperature. (, SGS-THOMSON 38 fy MICROELECTRONICS 63