Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 2 1Publication Order Number:
NUD3105D/D
NUD3105D
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps , and small DC motors without the need
of a free−wheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
•Provides a Robust Driver Interface Between D.C. Relay Coil and
Sensitive Logic Circuits
•Optimized to Switch Relays from 3.0 V to 5.0 V Rail
•Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V
•Internal Zener Eliminates the Need of Free−Wheeling Diode
•Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
•Low VDS(ON) Reduces System Current Drain
Typical Applications
•Telecom: Line Cards, Modems, Answering Machines, FAX
•Computers and Office: Photocopiers, Printers, Desktop Computers
•Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders
•Industrial:Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
•Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
Lamp Drivers
INTERNAL CIRCUIT DIAGRAMS
Drain (6)
1.0 k
300 k
Gate (2)
Source (1)
Drain (3)
1.0 k
300 k
Gate (5)
Source (4)
CASE 318F
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Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAMS
Relay, Inductive Load Driver
Silicon SMALLBLOCK
0.5 Ampere, 8.0 V Clamp
NUD3105DMT1 SC−74 3000/Tape & Reel
123
4
5
6
SC−74
CASE 318F
STYLE 7 JW4 = Specific Device Code
D = Date Code
JW4 D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUD3105D
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol Rating Value Unit
VDSS Drain to Source Voltage − Continuous 6.0 Vdc
VGS Gate to Source Voltage – Continuous 6.0 Vdc
IDDrain Current – Continuous 500 mA
EzSingle Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) 50 mJ
TJJunction Temperature 150 °C
TAOperating Ambient Temperature −40 to 85 °C
Tstg Storage Temperature Range −65 to +150 °C
PDTotal Power Dissipation (Note 1)
Derating Above 25°C380
1.5 mW
mW/°C
RJA Thermal Resistance Junction−to−Ambient 329 °C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD−883, Method 3015.
Machine Model Method 200 V.
TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
VBRDSS Drain to Source Sustaining Voltage (Internally Clamped)
(ID = 10 mA) 6.0 8.0 9.0 V
BVGSO Ig = 1.0 mA − − 8.0 V
IDSS Drain to Source Leakage Current
(VDS = 5.5 V , VGS = 0 V, TJ = 25°C)
(VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) −
−−
−15
15 A
IGSS Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V) 5.0
−−
−35
65 A
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 85°C) 0.8
0.8 1.2
−1.4
1.4 V
RDS(on) Drain to Source On−Resistance
(ID = 250 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 5.0 V)
(ID = 500 mA, VGS = 3.0 V, TJ = 85°C)
(ID = 500 mA, VGS = 5.0 V, TJ = 85°C)
−
−
−
−
−
−
−
−
−
−
1.2
1.3
0.9
1.3
0.9
IDS(on) Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C) 300
200 400
−−
−mA
gFS Forward Transconductance
(VOUT = 5.0 V, IOUT = 0.25 A) 350 570 − mmhos
NUD3105D
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3
TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol UnitMaxTypMinCharacteristic
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
(VDS = 5.0 V,VGS = 0 V, f = 10 kHz) − 25 − pF
Coss Output Capacitance
(VDS = 5.0 V, VGS = 0 V, f = 10 kHz) − 37 − pF
Crss Transfer Capacitance
(VDS = 5.0 V, VGS = 0 V, f = 10 kHz) − 8.0 − pF
SWITCHING CHARACTERISTICS
Symbol Characteristic Min Typ Max Units
tPHL
tPLH
tPHL
tPLH
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (5.0 V)
Low to High Propagation Delay; Figure 1 (5.0 V)
High to Low Propagation Delay; Figure 1 (3.0 V)
Low to High Propagation Delay; Figure 1 (3.0 V)
−
−
−
−
25
80
44
44
−
−
−
−
nS
tf
tr
tf
tr
Transition Times:
Fall Time; Figure 1 (5.0 V)
Rise Time; Figure 1 (5.0 V)
Fall Time; Figure 1 (3.0 V)
Rise Time; Figure 1 (3.0 V)
−
−
−
−
23
32
53
30
−
−
−
−
nS
−
Figure 1. Switching Waveforms
Vout
GND
Vin GND
VZ
VCC
VCC
trtf
tPLH tPHL
50%
90%
50%
10%
NUD3105D
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4
TYPICAL CHARACTERISTICS
VZ, ZENER CLAMP VOLTAGE (V)
VGS = 0 V
11.0
12.0
10.0
9.0
8.0
7.0
13.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Transfer Function
TEMPERATURE (°C)
Figure 4. On Resistance Variation vs. Temperature Figure 5. RDS(ON) Variation with
Gate−To−Source Voltage
Figure 6. Zener Voltage vs. Temperature
IZ, ZENER CURRENT (mA)
Figure 7. Zener Clamp Voltage vs. Zener Current
ID, DRAIN CURRENT (A)
−50 −25 0 25 50 75 100
1200
1000
800
600
400
200
0125
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE (m)
VZ, ZENER VOLTAGE (V)
−50 −25 0 25 50 75 100 125
IZ = 10 mA
ID = 0.25 A
VGS = 3.0 V
50°C
1.0 1.2 1.4 1.60.8
50
45
40
35
30
25
20
2.0
15 1.8
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE ()
ID = 250 A
1.0 100.1 100
VGS = 0 V
VGS = 1.0 V
ID, DRAIN CURRENT (A)
VGS = 5.0 V
VGS = 3.0 V
VGS = 2.0 V
TJ = 25°C10
1.0
0.1
0.01
0.001
0.0001
0.00001
0.000001
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
85°C
−40°C
VDS = 0.8 V
ID = 0.5 A
VGS = 3.0 V
ID = 0.5 A
VGS = 5.0 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
50°C
85°C
−40°C
125°C
8.20
8.18
8.16
8.14
8.12
8.10
8.08
8.06
8.04
8.02
8.00
TEMPERATURE (°C)
10
1.0
0.1
0.01
0.001
0.0001
0.00001
85°C
−40°C
25°C
25°C
25°C
1000
6.0
NUD3105D
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5
TYPICAL CHARACTERISTICS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.01 100100.1
0.1
1.0
0.01
ID, DRAIN CURRENT (A)
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
ID, DRAIN CURRENT (A)
Figure 8. On−Resistance vs. Drain Current and
Temperature
TEMPERATURE (°C)
Figure 9. Gate Leakage vs. Temperature
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE ()
1.0
0.9
0.8
0.5
0.6
0.7
1.1
1.2
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
IGSS, GATE LEAKAGE (A)
30
25
0
5
10
35
40
−50 −25 025 50 75 100 125
20
15
125°C
85°C
50°C
25°C
−40°C
VGS = 3.0 V
VGS = 5.0 V
Figure 10. Safe Operating Area for NUD3105DLT1
Figure 11. Transient Thermal Response for NUD3105DLT1
0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
Pd(pk)
t1t2
DUTY CYCLE = t1/t2
PERIOD
PW
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.1
0.01
0.001
t1, PULSE WIDTH (ms)
DC
PW = 0.1 s
DC = 50%
PW = 7.0 ms
DC = 5%
PW = 10 ms
DC = 20%
Typical
IZ vs. VZ
V(BR)DSS min = 6.0 V
ID−Continuous = 0.5 A
VGS = 3.0 V, TC = 25°C
NUD3105D
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6
Designing with this Data Sheet
1. Determine the maximum inductive load current (at
max VCC, min coil resistance & usually minimum
temperature) that the NUD3105D will have to
drive and make sure it is less than the max rated
current.
2. For pulsed operation, use the Transient Thermal
Response of Figure 11 and the instructions with it
to determine the maximum limit on transistor
power dissipation for the desired duty cycle and
temperature range.
3. Use Figures 10 and 11 with the SOA notes to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
4. Verify that the circuit driving the gate will meet
the VGS(th) from the Electrical Characteristics
table.
5. Using the max output current calculated in step 1,
check Figure 7 to insure that the range of Zener
clamp voltage over temperature will satisfy all
system & EMI requirements.
6. Use IGSS and IDSS from the Electrical
Characteristics table to insure that “OFF” state
leakage over temperature and voltage extremes
does not violate any system requirements.
7. Review circuit operation and insure none of the
device max ratings are being exceeded.
Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V Level Translating Interface
+4.5 ≤ VCC ≤ +5.5 Vdc
+
Vout (6)
+
Vin (2)
GND (1)
NUD3105DDMT1
+3.0 ≤ VDD ≤ +3.75 Vdc
APPLICATIONS DIAGRAMS
Vout (3)
Vin (5)
GND (4)
NUD3105D
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7
Figure 13. A 140 mW, 5.0 V Relay with TTL Interface
+4.5 T O +5.5 Vdc
+
Vout (3)
−
AROMAT
TX2−5V
Max Continuous Current Calculation
for TX2−5V Relay, R1 = 178 Nominal @ RA = 25°C
Assuming ±10% Make Tolerance,
R1 = 178 * 0.9 = 160 Min @ TA = 25°C
TC for Annealed Copper Wire is 0.4%/°C
R1 = 160 * [1+(0.004) * (−40°−25°)] = 118 Min @ −40°C
IO Max = (5.5 V Max − 0.25V) /118 = 45 mA
+
Vout (3)
−
AROMAT
JS1E−5V
Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank
−
+
AROMAT
JS1E−5V
+
−
AROMAT
JS1E−5V
−
+
AROMAT
JS1E−5V
+4.5 T O +5.5 Vdc
Vin (1)
GND (2)
NUD3105DLT1
Vin (1)
GND (2)
NUD3105DLT1
NUD3105D
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8
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE K
23
456
A
L
1
S
GD
B
H
C
0.05 (0.002)
M
J
K
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.1142 0.1220 2.90 3.10
B0.0512 0.0669 1.30 1.70
C0.0354 0.0433 0.90 1.10
D0.0098 0.0197 0.25 0.50
G0.0335 0.0413 0.85 1.05
H0.0005 0.0040 0.013 0.100
J0.0040 0.0102 0.10 0.26
K0.0079 0.0236 0.20 0.60
L0.0493 0.0649 1.25 1.65
M0 10 0 10
S0.0985 0.1181 2.50 3.00
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
SOLDERING FOOTPRINT
inches
mm
0.028
0.7
0.074
1.9
0.037
0.95
0.037
0.95
0.094
2.4
0.039
1.0
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NUD3105D/D
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