DYC) =|2 [MOS =] IRF522,523 FIELD EFFECT POWER TRANSISTOR 100, 60 VOLTS RDS(ON) = 0.4 2 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL 5 to achieve low on-resistance with excellent device rugged- \ ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power CASE STYLE TO-220AB supplies, inverters, converters and solenoid/relay drivers. DIMENSIONS ANE IN INCHES AND (MILLIMETERS) Also, the extended safe operating area with good linear aie $8) sous transfer characteristics makes it well suited for many linear Soin Tole ee je BEES applications such as audio amplifiers and servo motors. ~E 261673) 73) j2 Fe 2a6(6.22)| |. CASE Features | t TEMPERATURE t ape . tee POINT Polysilicon gate Improved stability and reliability swan + Bybee) whe . . 2 . No secondary breakdown Excellent ruggedness | i i aan + +130( = + 4 Ultra-fast switching Independent of temperature 7 1 a . TERM.1 600(12,7)MIN, Voltage controlled High transconductance reRMa gus " Low input capacitance Reduced drive requirement vena 7 a : 2: o.gt | "1062.67 Ong 78) Excellent thermal stability Ease of paralleling aaa EE OeNee E138) _ 2) 021(0.83; UNIT TYPE [TERMUTERM.2] TERMS TAB POWER MOS FET |TO-220-AB] GATE |DRAIN| SOURCE! DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF522 IRF523 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Rag = 1M VpGrR 100 60 Volts Continuous Drain Current @ Tg = 25C ID 7 7 A To = 100C 4 4 A Pulsed Drain Current") IDM 28 28 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 40 40 Watts Derate Above 25C 0.32 0.32 Ww/C Operating and Storage Junction Temperature Range Ty, TstG -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 3.12 3.12 C/W Thermal Resistance, Junction to Ambient Rasa 80 80 C/AN Maximum Lead Temperature for Soldering Purposes: 4 from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 179 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC |syMBOL | MIN | TYP | MAX | UNIT off characteristics | Drain-Source Breakdown Voltage IRF522 | BVpss 100 _ _ Volts (Vas = OV, Ip = 250 uA) IRF523 60 Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vas = OV, Tc = 25C) _ _ 250 wA (Vps = Max Rating, 0.8, Vgg = OV, To = 125C) 1000 OaNoe e oOVy Current lass _ _ +500 nA on characteristics* Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas; Ip = 250 vA) On-State Drain Current _ _ (Vag = 10V, Vp = 10V) ID(oN) | 7.0 A Static Drain-Source On-State Resistance (Vas = 10V, Ip = 4A) Rps(ON) _ 0.3 0.4 Ohms Forward Transconductance _ (Vps = 10V, Ip = 4A) Ofs 1.2 2.2 mhos dynamic characteristics Input Capacitance Vas = 10V Ciss 410 600 pF Output Capacitance Vps = 25V Coss _ 160 400 pF Reverse Transfer Capacitance f= 1MHz Crss - 40 100 pF switching characteristics* Turn-on Delay Time Vps = 30V tajon) _ 15 _ ns Rise Time . Ip = 4.0A, Veg = 15V tr _ 30 _ ns Turn-off Delay Time RGEN = 500, Res = 12.50 ta(off) _ 25 _ ns Fall Time (Res (equiv.) = 100) ty _ 10 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 7 A Pulsed Source Current - Isu - _ 28 A Diode Forward Voltage _ 1 23 It (To = 25C, Veg = OV, Ig = 7A) Vsp 0 . Volts Reverse Recovery Time trr _ 100 _ ns (Ig = 8A, dig/dt = 100A/usec, To = 125C) Qrr _ 0.9 _ uC *Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 80 60 40 - CONDITIONS: Rps(on CONDITIONS: Ip = 4.0 A, Vigg = 10V Va@s(tH) CONDITIONS: tp= 250pA, Vos =Ves a gq 20 a q c ad # 10 < = 8 & = 6 S E 2 4 = w c a c o > 2 > Q 2 z < 10 <= & 08 RATION IN THIS AREA z 3, 06 MAY BE LIMITED BY R 2 a DSION) & 04 02 LE PULSE IRF523 . T.7 25C IRF522 01 0 1 2 4 6 810 20 40 6080100 200 400 600 1000 -40 0 40 80 Vpg. ORAIN-SOURCE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA 180 GS(TH} 120 TYPICAL NORMALIZED Rosin, AND Vagitn) VS. TEMP.