To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR PA621TT N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) 2.0 0.2 FEATURES 2.5 V drive available Low on-state resistance RDS(on)1 = 50 m MAX. (VGS = 4.5 V, ID = 2.5 A) RDS(on)2 = 53 m MAX. (VGS = 4.0 V, ID = 2.5 A) RDS(on)3 = 79 m MAX. (VGS = 2.5 V, ID = 2.5 A) 1 2 4 1.6 5 0~0.05 3 0.65 S +0.1 -0.05 0.65 MAX. 0.8 0.15 * * 6 2.10.1 0.25 0.1 The PA621TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. ORDERING INFORMATION 0.05 S PACKAGE PA621TT 6pinWSOF (1620) 1,2,5,6 : Drain 3 : Gate 4 : Source 0.4 0.1 PART NUMBER Marking: WB ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS 12 V Drain Current (DC) (TA = 25C) ID(DC) 5.0 A ID(pulse) 20 A PT1 0.2 W PT2 1.4 W Channel Temperature Tch 150 C Storage Temperature Tstg -55 to +150 C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec. +0.1 0.2 -0.05 0.1 M S EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16112EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan (c) 2002 PA621TT ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 12 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V | yfs | VDS = 10 V, ID = 2.5 A 1.0 4.8 RDS(on)1 VGS = 4.5 V, ID = 2.5 A 40 50 m RDS(on)2 VGS = 4.0 V, ID = 2.5 A 42 53 m RDS(on)3 VGS = 2.5 V, ID = 2.5 A 59 79 m Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 270 pF Output Capacitance Coss VGS = 0 V 80 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 60 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 2.5 A 30 ns tr VGS = 4.0 V 200 ns td(off) RG = 10 120 ns 160 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 3.3 nC Gate to Source Charge QGS VGS = 4.0 V 0.7 nC Gate to Drain Charge QGD ID = 5.0 A 1.8 nC IF = 5.0 A, VGS = 0 V 0.90 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% = 1 s Duty Cycle 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet G16112EJ1V0DS PA621TT TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.6 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - C 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) PW = 100 s 10 ID(DC) 1 1 ms 10 ms 100 ms 0.1 5s Single Pulse Mounted on FR-4 board of 2 50 cm x 1.1 mm 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W ID - Drain Current - A RDS(on) Limited (VGS = 4.5 V) 1000 100 10 Single Pulse Mounted on FR-4 board of 2 50 cm x 1.1 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16112EJ1V0DS 3 PA621TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 20 100 Pulsed V DS = 10 V Pulsed VGS = 4.5 V ID - Drain Current - A ID - Drain Current - A 10 15 4.0 V 10 2.5 V 1 T A = 125C 75C 25C -25C 0.1 0.01 5 0.001 0 0.0001 0 0.2 0.4 0.6 0.8 1 0 0.5 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1.0 mA 1 0.8 0.6 0.4 50 100 10 T A = -25C 25C 75C 125C 1 0.1 0.1 VGS = 2.5 V 4.0 V 4.5 V 40 20 50 100 RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m Pulsed 0 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed 80 60 ID = 2.5 A 40 20 150 Tch - Channel Temperature - C 4 1 ID - Drain Current - A 100 -50 3 VDS = 10 V Pulsed 0.01 0.01 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 60 2.5 100 Tch - Channel Temperature - C 80 2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.2 0 1.5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 1 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Data Sheet G16112EJ1V0DS 12 PA621TT 100 VGS = 4.5 V Pulsed 80 TA = 125C 60 75C 25C 40 -25C 20 0.01 0.1 1 10 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 100 80 75C 25C 60 40 -25C 20 0.01 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS 100 1000 120 VGS = 2.5 V Pulsed TA = 125C 100 75C 80 25C -25C 60 40 0.01 VDD = 10 V VGS = 4.0 V R G = 10 tr tf 100 td(off) td(on) 10 0.1 1 10 0.1 100 1 10 ID - Drain Current - A ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 V GS = 0 V f = 1.0 MHz C iss 100 C oss C rss 10 Pulsed IF - Diode Forward Current - A Ciss, Coss, Crss - Capacitance - pF TA = 125C VGS = 4.0 V Pulsed ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 VGS = 0 V 1 0.1 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet G16112EJ1V0DS 5 PA621TT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 VGS - Gate to Drain Voltage - V ID = 5.0 A VDD = 16 V 10 V 4V 6 4 2 0 0 1 2 3 4 QG - Gate Charge - nC 6 Data Sheet G16112EJ1V0DS PA621TT [MEMO] Data Sheet G16112EJ1V0DS 7 PA621TT * The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4