ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low-current, high-speed switching applications. *ON Semiconductor Preferred Device * High Collector-Emitter Sustaining Voltage -- * 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS VCEO(sus) = 100 Vdc (Min) -- MJE243, MJE253 High DC Current Gain @ IC = 200 mAdc hFE = 40-200 = 40-120 -- MJE243, MJE253 * Low Collector-Emitter Saturation Voltage -- * * VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product -- fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIII IIIII CASE 77-09 TO-225AA MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate @ 25C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO VCB 100 Vdc 100 Vdc VEB IC 7.0 Vdc 4.0 8.0 Adc IB PD 10 Adc 15 0.12 Watts W/ac PD 1.5 0.012 Watts W/C TJ, Tstg -65 to +150 C Symbol Max Unit JC JA 8.34 C/W 83.4 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 10 1 Publication Order Number: MJE243/D 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) MJE243 MJE253 40 60 100 80 120 140 0 160 T, TEMPERATURE (C) Figure 1. Power Derating IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 -- Vdc -- -- 0.1 0.1 -- 0.1 40 15 180 -- -- -- 0.3 0.6 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO Adc Adc ON CHARACTERISTICS DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) -- 1.8 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) -- 1.5 Vdc fT 40 -- MHz Cob -- 50 pF DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) http://onsemi.com 2 MJE243 MJE253 VCC +30 V 1K 500 300 200 RC 25 s +11 V SCOPE RB 100 D1 51 -9.0 V t, TIME (ns) 0 tr, tf 10 ns DUTY CYCLE = 1.0% tr -4 V 50 30 20 td 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 1 0.01 NPN MJE243 PNP MJE253 0.02 0.03 0.05 0.1 1 2 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.1 JC(t) = r(t) JC JC = 8.34C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 3 5 10 Figure 3. Turn-On Time Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 VCC = 30 V IC/IB = 10 TJ = 25C 0.5 1.0 2.0 t, TIME (ms) 5.0 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 100s 5.0 2.0 1.0ms 1.0 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.2 0.1 0.05 0.02 0.01 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500s 5.0ms MJE243/MJE253 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area http://onsemi.com 3 MJE243 MJE253 10K 200 ts t, TIME (ns) 1K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C TJ = 25C C, CAPACITANCE (pF) 5K 3K 2K 500 300 200 100 50 30 20 10 0.01 tf NPN MJE243 PNP MJE253 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) 3 5 100 50 30 Cob 20 10 1.0 10 Cib 70 Figure 6. Turn-Off Time MJE243 (NPN) MJE253 (PNP) 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 70 100 MJE243 MJE253 NPN MJE243 300 200 TJ = 150C 200 VCE = 1.0 V VCE = 2.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 500 PNP MJE253 25C 100 70 50 -55C 30 20 10 7.0 5.0 0.04 0.06 0.1 0.4 0.6 0.2 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 25C -55C 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 4.0 VCE = 1.0 V VCE = 2.0 V TJ = 150C 100 70 50 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain 1.4 1.0 0.8 0.6 TJ = 25C 1.2 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.2 1.4 TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 0.4 5.0 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1.0 V 0.6 0.4 IC/IB = 10 5.0 0.2 VCE(sat) 0 0.04 0.06 0.1 4.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) +2.5 +2.0 V, TEMPERATURE COEFFICIENTS (mV/ C) V, TEMPERATURE COEFFICIENTS (mV/ C) Figure 9. "On" Voltages *APPLIES FOR IC/IB hFE/3 +1.5 +1.0 +0.5 0 *VC FOR VCE(sat) -55C to 25C -0.5 -1.0 -1.5 -2.0 25C to 150C 25C to 150C VB FOR VBE -2.5 0.04 0.06 0.1 -55C to 25C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 +2.5 +2.0 *APPLIES FOR IC/IB hFE/3 +1.5 +1.0 +0.5 0 25C to 150C *VC FOR VCE(sat) -55C to 25C -0.5 -1.0 -1.5 -2.0 25C to 150C VB FOR VBE -2.5 0.04 0.06 0.1 -55C to 25C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients http://onsemi.com 5 MJE243 MJE253 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- MJE243 MJE253 Notes http://onsemi.com 7 MJE243 MJE253 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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