MJE243-D - ON Semiconductor - Datasheet.Directory

Complementary Silicon Power

Plastic Transistors

. . . designed for low power audio amplifier and low–current,

high–speed switching applications.

•High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253

•High DC Current Gain @ IC = 200 mAdc

hFE = 40–200

= 40–120 — MJE243, MJE253

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

•High Current Gain Bandwidth Product —

fT = 40 MHz (Min) @ IC = 100 mAdc

•Annular Construction for Low Leakages

ICBO = 100 nAdc (Max) @ Rated VCB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

100

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

100

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

7.0

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎÎ

IC

ÎÎÎÎÎÎ

4.0

8.0

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎÎ

IB

ÎÎÎÎÎÎ

10

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎÎÎ

Î

ÎÎÎÎ

Î

ÎÎÎÎÎÎ

PD

ÎÎÎÎÎÎ

Î

ÎÎÎÎ

Î

ÎÎÎÎÎÎ

15

0.12

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Watts

W/ac

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25C

Derate @ 25C

ÎÎÎÎÎÎ

PD

ÎÎÎÎÎÎ

1.5

0.012

ÎÎÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎÎ

Î

ÎÎÎÎ

Î

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

Î

ÎÎÎÎ

Î

ÎÎÎÎÎÎ

–65 to +150

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

8.34

ÎÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎÎ

θJA

ÎÎÎÎÎÎ

83.4

ÎÎÎÎÎ

C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 10 1Publication Order Number:

MJE243/D

MJE243

MJE253

4 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

100 VOLTS

15 WATTS

*ON Semiconductor Preferred Device

*

NPN

PNP *

CASE 77–09

TO–225AA

321

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MJE243 MJE253

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2

16

20

Figure 1. Power Derating

T, TEMPERATURE (°C)

040 60 100 120 160

12

PD, POWER DISSIPATION (WATTS)

1.6

0

1.2

8.0 0.8

4.0 0.4

80 140

TC

PD, POWER DISSIPATION (WATTS)

TA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCE = 100 Vdc, IE = 0, TC = 125C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.1

ÎÎÎ

Î

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 200 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

40

15

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

180

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.3

0.6

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 200 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.8

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.5

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

fT

ÎÎÎ

Î

ÎÎÎ

40

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

50

ÎÎÎ

Î

ÎÎÎ

pF

MJE243 MJE253

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3

Figure 2. Switching Time Test Circuit

+11 V

25 µs

0

-9.0 V

RB

-4 V

D1

SCOPE

VCC

+30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

51

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES

1K

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25°C

t, TIME (ns)

500

300

200

100

50

td

30

20

10

5

1

0.01 0.03 0.05 0.50.20.1 0.3 10

Figure 3. Turn–On Time

3

2

5213

tr

NPN MJE243

PNP MJE253

0.02

t, TIME (ms)

0.01

0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL RESISTANCE

θJC(t) = r(t) θJC

θJC = 8.34°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) θJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

(NORMALIZED)

Figure 4. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

30

0.01

0.05

Figure 5. Active Region Safe Operating Area

500µs

dc

5.0

20107.05.03.02.01.0

100µs

TJ = 150°C

IC, COLLECTOR CURRENT (AMP)

0.2

0.5

1.0

2.0

0.02

1.0ms

1007050

5.0ms

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

MJE243/MJE253

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

 150C. TJ(pk) may be calculated from the data in

Figure 4. A t high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

MJE243 MJE253

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4

10K

IC, COLLECTOR CURRENT (AMPS)

10

5K

3K

2K

1K

500

300

200

100

50

Figure 6. Turn–Off Time

t, TIME (ns)

30

20

0.01 0.03 0.05 0.50.2

0.02 0.1 0.3 105213

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

VR, REVERSE VOLTAGE (VOLTS)

10 100

100

200

50

Figure 7. Capacitance

70

5020107.05.03.01.0

C, CAPACITANCE (pF)

2.0

TJ = 25°C

Cib

Cob

MJE243 (NPN)

MJE253 (PNP)

30

NPN MJE243

PNP MJE253

20

7030

MJE243 MJE253

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5

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 8. DC Current Gain

Figure 9. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

200

500

0.06 0.1 0.4 4.00.04

100

70

50

20

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

5.0 1.0 2.00.6

25°C

TJ = 150°C

-55°C

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.2

0.8

0.4

0

TJ = 25°C

V, VOLTAGE (VOLTS)

NPN

MJE243 PNP

MJE253

100

200

70

50

30

20

2.0

hFE, DC CURRENT GAIN

25°C

TJ = 150°C

-55°C

VCE = 1.0 V

VCE = 2.0 V

V, VOLTAGE (VOLTS)

VCE(sat)

VBE @ VCE = 1.0 V

θVB FOR VBE

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

IC/IB = 10

VBE @ VCE = 1.0 V

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.5

+2.0

+1.5

+1.0

0

-0.5

-1.0

-1.5

-2.0

+0.5

-2.5

*APPLIES FOR IC/IB ≤ hFE/3

25°C to 150°C

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.5

+2.0

+1.5

+1.0

0

-0.5

-1.0

-1.5

-2.0

+0.5

-2.5

*APPLIES FOR IC/IB ≤ hFE/3

25°C to 150°C

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

VCE = 1.0 V

VCE = 2.0 V

7.0

10

30

300

0.06 0.1 0.4 4.00.2 1.0 2.00.6

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

0.06 0.1 0.4 4.00.04 0.2 1.0 2.00.6

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

1.0

0.6

0.2

1.4

1.2

0.8

0.4

1.0

0.6

0.2

3.0

5.0

7.0

10

5.0

IC/IB = 10

VCE(sat)

5.0

VBE(sat) @ IC/IB = 10

*θVC FOR VCE(sat)

θVB FOR VBE

*θVC FOR VCE(sat)

MJE243 MJE253

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6

PACKAGE DIMENSIONS

CASE 77–09

ISSUE W

TO–225AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

K

FC

Q

H

V

G

S

D

JR

U

132

2 PL

M

A

M

0.25 (0.010) B M

M

A

M

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 --- 1.02 ---



STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MJE243 MJE253

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7

Notes

MJE243 MJE253

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8

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